G. Ribes, S. Bruyère, M. Denais, F. Monsieur, V. Huard, D. Roy, G. Ghibaudo. Multi-vibrational hydrogen release: Physical origin of T::bd::, Q::bd:: power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. Microelectronics Reliability, 45(12):1842-1854, 2005. [doi]
@article{RibesBDMHRG05,
title = {Multi-vibrational hydrogen release: Physical origin of T::bd::, Q::bd:: power-law voltage dependence of oxide breakdown in ultra-thin gate oxides},
author = {G. Ribes and S. Bruyère and M. Denais and F. Monsieur and V. Huard and D. Roy and G. Ghibaudo},
year = {2005},
doi = {10.1016/j.microrel.2005.03.009},
url = {http://dx.doi.org/10.1016/j.microrel.2005.03.009},
researchr = {https://researchr.org/publication/RibesBDMHRG05},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {45},
number = {12},
pages = {1842-1854},
}