The following publications are possibly variants of this publication:
- Analytical current model of tunneling field-effect transistor considering the impacts of both gate and drain voltages on tunnelingChao Wang, Chunlei Wu, Jiaxin Wang, Qianqian Huang, Ru Huang. chinaf, 58(2):1-8, 2015. [doi]
- A comb-gate silicon tunneling field effect transistor with improved on-state currentZhan Zhan, Qianqian Huang, Ru Huang, Wenzhe Jiang, Yangyuan Wang. chinaf, 56(7):1-6, 2013. [doi]
- An empirical model for static I-V characteristics of double gate tunneling field effect transistorD. M. Huang, C. J. Yao, D. H. Shi, M. F. Li. asicon 2013: 1-4 [doi]