The following publications are possibly variants of this publication:
- Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitrideJackie Chan, Hei Wong, M.-C. Poon, C. W. Kok. mr, 43(4):611-616, 2003. [doi]
- SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layerM.-C. Poon, Y. Gao, T. C. W. Kok, A. M. Myasnikov, Hei Wong. mr, 41(12):2071-2074, 2001. [doi]