DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures - researchr publication related

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Hanbin Ying, Jeffrey W. Teng, George N. Tzintzarov, Anup P. Omprakash, Sunil G. Rao, Uppili Raghunathan, Adrian Ildefonso, Martin S. Fernandez, John D. Cressler. DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures. In 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nashville, TN, USA, November 3-6, 2019. pages 1-4, IEEE, 2019. [doi]

The following publications are possibly variants of this publication:

The SiGe HBT at Cryogenic Temperatures: Invited PagerJohn D. Cressler. bcicts 2023: 274-279 [doi]

The Impact of BEOL Stress on SiGe HBTs at Cryogenic TemperaturesJackson P. Moody, Jeffrey W. Teng, John D. Cressler. bcicts 2023: 270-273 [doi]

Transistor noise in SiGe HBT RF technologyGuofu Niu, Zhenrong Jin, John D. Cressler, Rao Rapeta, Alvin J. Joseph, David L. Harame. jssc, 36(9):1424-1427, 2001. [doi]

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