David L. Harame - researchr alias

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Viewing Publication 1 - 22 from 22

2018

2016

Analog Circuit Blocks for 80-GHz Bandwidth Frequency-Interleaved, Linear, Large-Swing Front-EndsJames Hoffman, Jean-Roland Martin-Gosse, Stefan Shopov, Jack J. Pekarik, Renata Camillo-Castillo, Vibhor Jain, David L. Harame, Sorin P. Voinigescu. jssc, 51(9):1985-1993, 2016. [doi]

2013

A 10Gb/s 6Vpp differential modulator driver in 0.18µm SiGe-BiCMOSYi Zhao, Leonardo Vera, John R. Long, David L. Harame. isscc 2013: 132-133 [doi]

2006

SiGe BiCMOS Trends - Today and TomorrowJames S. Dunn, David L. Harame, Alvin J. Joseph, Stephen A. St. Onge, Natalie B. Feilchenfeld, Louis D. Lanzerotti, Bradley A. Orner, E. G. Gebreselasie, Jeffrey B. Johnson, Douglas D. Coolbaugh, R. Rassel, M. Khater. cicc 2006: 695-702 [doi]

2005

2004

Demonstration of a SiGe RF LNA Design Using IBM Design Kits in 0.18um SiGe BiCMOS TechnologyYiming Chen, Xiaojuen Yuan, David Scagnelli, James Mecke, Jeff Gross, David L. Harame. date 2004: 22-27 [doi]

A 21-27GHz self-shielded 4-way power-combining PA balunTak Shun D. Cheung, John R. Long, Youri Tretiakov, David L. Harame. cicc 2004: 617-620 [doi]

2003

On-chip interconnect-aware design and modeling methodology, based on high bandwidth transmission line devicesDavid Goren, Michael Zelikson, Rachel Gordin, Israel A. Wagner, Anastasia Barger, Alon Amir, Betty Livshitz, Anatoly Sherman, Youri Tretiakov, Robert A. Groves, J. Park, Donald L. Jordan, Sue E. Strang, Raminderpal Singh, Carl E. Dickey, David L. Harame. dac 2003: 724-727 [doi]

Mixed signals on mixed-signal: the right next technologyRob A. Rutenbar, David L. Harame, Kurt Johnson, Paul Kempf, Teresa H. Y. Meng, Reza Rofougaran, James Spoto. dac 2003: 278-279 [doi]

2001

1998

A scaleable, statistical SPICE Gummel-Poon model for SiGe HBTsK. M. Walter, B. Ebersman, D. A. Sunderland, G. D. Berg, G. G. Freeman, Robert A. Groves, D. K. Jadus, David L. Harame. jssc, 33(9):1439-1444, 1998. [doi]

1997

Integrated RF components in a SiGe bipolar technologyJoachim N. Burghartz, Mehmet Soyuer, Keith A. Jenkins, Michael Kies, Margaret Dolan, Kenneth J. Stein, John Malinowski, David L. Harame. jssc, 32(9):1440-1445, 1997. [doi]

Temperature dependence of Q and inductance in spiral inductors fabricated in a silicon-germanium/BiCMOS technologyRobert A. Groves, David L. Harame, Dale Jadus. jssc, 32(9):1455-1459, 1997. [doi]

An 11 GHz 3-V SiGe voltage controlled oscillator with integrated resonatorMehmet Soyuer, Joachim N. Burghartz, Herschel A. Ainspan, Keith A. Jenkins, Peter Xiao, Arvin R. Shahani, Margaret S. Dolan, David L. Harame. jssc, 32(9):1451-1454, 1997. [doi]

A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier designSorin P. Voinigescu, Michael C. Maliepaard, Jonathan L. Showell, Greg E. Babcock, David Marchesan, Michael Schroter, Peter Schvan, David L. Harame. jssc, 32(9):1430-1439, 1997. [doi]

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