2008
- The influence of 1 nm AlN interlayer on properties of the Al::0.3::Ga::0.7::N/AlN/GaN HEMT structureLunchun Guo, Xiaoliang Wang, Cuimei Wang, Hongling Xiao, Junxue Ran, Weijun Luo, Xiaoyan Wang, Baozhu Wang, Cebao Fang, Guoxin Hu. mj, 39(5):777-781, 2008. [doi]
- Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVDWeijun Luo, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Junxue Ran, Lunchun Guo, Jianping Li, Hongxin Liu, Yanling Chen, Fuhua Yang, Jinmin Li. mj, 39(9):1108-1111, 2008. [doi]
2007
- Characteristics of high Al content Al::x::Ga::1-x::N grown by metalorganic chemical vapor depositionXiaoyan Wang, Xiaoliang Wang, Guoxin Hu, Baozhu Wang, Zhiyong Ma, Hongling Xiao, Cuimei Wang, Junxue Ran, Jianping Li. mj, 38(8-9):838-841, 2007. [doi]
2006
2005
- Growth and characterization of 0.8-µm gate length AlGaN/GaN HEMTs on sapphire substratesXiaoliang Wang, Cuimei Wang, Guoxin Hu, Junxi Wang, Junxue Ran, Cebao Fang, Jianping Li, Yiping Zeng, Jinmin Li, Xinyu Liu, He Qian. chinaf, 48(6):808-814, 2005. [doi]