Martin Lefebvre - researchr alias

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Viewing Publication 1 - 10 from 10

2022

A 1-to-4b 16.8-POPS/W 473-TOPS/mm2 6T-based In-Memory Computing SRAM in 22nm FD-SOI with Multi-Bit Analog Batch-NormalizationAdrian Kneip, Martin Lefebvre, Julien Verecken, David Bol. esscirc 2022: 157-160 [doi]

A Family of Current References Based on 2T Voltage References: Demonstration in 0.18-μm With 0.1-nA PTAT and 1.1-μA CWT 38-ppm/°C DesignsMartin Lefebvre, David Bol. tcasI, 69(8):3237-3250, 2022. [doi]

A 0.9-nA Temperature-Independent 565-ppm/°C Self-Biased Current Reference in 22-nm FDSOIMartin Lefebvre, Denis Flandre, David Bol. esscirc 2022: 469-472 [doi]

2021

2019

2 12.7-pJ/SOP 64k-Synapse 256-Neuron Online-Learning Digital Spiking Neuromorphic Processor in 28-nm CMOSCharlotte Frenkel, Martin Lefebvre, Jean-Didier Legat, David Bol. tbcas, 13(1):145-158, 2019. [doi]

1999

Panel: Cell Libraries - Build vs. Buy; Static vs. DynamicKurt Keutzer, Kurt Wolf, David Pietromonaco, Jay Maxey, Jeff Lewis, Martin Lefebvre, Jeff Burns. dac 1999: 341-342 [doi]

1997

The Future of Custom Cell Generation in Physical SynthesisMartin Lefebvre, David Marple, Carl Sechen. dac 1997: 446-451 [doi]

1993

A study of the use of local interconnect in CMOS leaf cell designC. Bachelu, Martin Lefebvre. tvlsi, 1(4):566-571, 1993. [doi]

1990

Transistor placement and interconnect algorithms for leaf cell synthesisMartin Lefebvre, Chong Chan, Grant Martin. eurodac 1990: 119-123 [doi]

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