| 1395 | -- | 1404 | Mohamed H. Zaki, Sofiène Tahar, Guy Bois. Formal verification of analog and mixed signal designs: A survey |
| 1405 | -- | 1407 | Gwiy-Sang Chung, Kang-San Kim. Raman scattering of polycrystalline 3C-SiC film deposited on AlN buffer layer by using CVD with HMDS |
| 1408 | -- | 1412 | Gwiy-Sang Chung, Kyu-Hyung Yoon. Ohmic contacts to single-crystalline 3C-SiC films for extreme-environment MEMS applications |
| 1413 | -- | 1415 | Gwiy-Sang Chung, Ki-Bong Han. H::2:: carrier gas dependence of Young s modulus and hardness of chemical vapor deposited polycrystalline 3C-SiC thin films |
| 1416 | -- | 1424 | Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Mridula Gupta, R. S. Gupta. Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency |
| 1425 | -- | 1428 | M. Sahal, B. Hartiti, A. Ridah, M. Mollar, B. Marí. Structural, electrical and optical properties of ZnO thin films deposited by sol-gel method |
| 1429 | -- | 1432 | Doron Abraham, Zeev Zalevsky, Avraham Chelly, Jossef Shappir, Michael Rosenbluh. Silicon on insulator photo-activated modulator |
| 1439 | -- | 1443 | R. Srnánek, G. Irmer, D. Donoval, J. Osvald, D. Mc Phail, A. Christoffi, B. Sciana, D. Radziewicz, M. Tlaczala. Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn delta-doped GaAs structures |
| 1452 | -- | 1456 | Zhixiang Cai, Xiangyou Li, Qianwu Hu, Xiaoyan Zeng. Study on thick-film PTC thermistor fabricated by micro-pen direct writing |
| 1457 | -- | 1460 | H. Touati, M. Souissi, Z. Chine, B. El Jani. Near-infrared photoluminescence of V-doped GaN |
| 1461 | -- | 1468 | A. Venkataratnam, A. K. Goel. Design and simulation of logic circuits with hybrid architectures of single-electron transistors and conventional MOS devices at room temperature |
| 1469 | -- | 1471 | C. S. Yang. Quantum states of a hydrogenic donor impurity in a cubic quantum dot by the finite difference method |
| 1472 | -- | 1475 | S. V. Jadhavand, Vijaya Puri. Microwave absorption and permittivity of polyaniline thin films using overlay technique |
| 1476 | -- | 1484 | Fatemeh Kashfi, Sied Mehdi Fakhraie, Saeed Safari. Designing an ultra-high-speed multiply-accumulate structure |
| 1485 | -- | 1490 | Gian-Franco Dalla Betta, S. Ronchin, A. Zoboli, N. Zorzi. High-performance PIN photodiodes on TMAH thinned silicon wafers |
| 1491 | -- | 1498 | Valeria Garofalo. Fixed-width multipliers for the implementation of efficient digital FIR filters |
| 1504 | -- | 1508 | Buket D. Barkana. Characteristics of AlGaAs/GaAs heterostructure RT-SCR model |
| 1509 | -- | 1515 | Zine Abid, Hayssam El-Razouk, D. A. El-Dib. Low power multipliers based on new hybrid full adders |
| 1516 | -- | 1520 | S. T. Ahmad, D. G. Hasko. Broadband microwave spectroscopy of a GaAs point contact |
| 1521 | -- | 1524 | M. Souissi, H. Touati, A. Fouzri, A. Bchetnia, B. El Jani. Effect of carrier gas on the surface morphology of V-doped GaN layers |
| 1525 | -- | 1527 | Chunlin Zhang, Su Liu, Fangcong Wang, Yong Zhang. Improved property in organic light-emitting diode utilizing two Al/Alq::3:: layers |
| 1528 | -- | 1533 | M. Shavezipur, K. Ponnambalam, S. M. Hashemi, A. Khajepour. A probabilistic design optimization for MEMS tunable capacitors |
| 1534 | -- | 1537 | Siroos Toofan, Abdolreza Rahmati, A. Abrishamifar, G. Roientan Lahiji. Low power and high gain current reuse LNA with modified input matching and inter-stage inductors |
| 1538 | -- | 1541 | Ismail Saad, Razali Ismail. Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method |
| 1542 | -- | 1544 | J. P. Cui, Y. Duan, X. F. Wang, Y. P. Zeng. Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy |
| 1550 | -- | 1552 | Georgy L. Pakhomov. Magnetron sputtered vs. thermally evaporated gold contacts in phthalocyanine-based thin film devices |
| 1553 | -- | 1555 | Jin Seok Yang, Seong-Il Kim, Yong-Tae Kim, Woon Jo Cho, Jung-Ho Park. Electrical characteristics of nano-crystal Si particles for nano-floating gate memory |
| 1556 | -- | 1559 | T. B. Wei, R. F. Duan, J. X. Wang, J. M. Li, Z. Q. Huo, Y. P. Zeng. Hillocks and hexagonal pits in a thick film grown by HVPE |
| 1560 | -- | 1563 | Gwiy-Sang Chung, Chael-Han Kim. RTD characteristics for micro-thermal sensors |
| 1564 | -- | 1567 | Jumril Yunas, Burhanuddin Yeop Majlis, Smeee. Comparative study of stack interwinding micro-transformers on silicon monolithic |
| 1568 | -- | 1571 | Fen Qiao, Aimin Liu, Yi Xiao, Yang Ping Ou, Ji quan Zhang, Yong chang Sang. Enhanced photovoltaic characteristics of solar cells based on n-type triphenodioxazine derivative |
| 1572 | -- | 1575 | Shang-Chou Chang, Tien-Chai Lin, To-Sing Li, Sheng-Han Huang. Carbon nanotubes grown from nickel catalyst pretreated with H::2::/N::2:: plasma |
| 1576 | -- | 1579 | Jian-Duo Lu, Yang-Lai Hou, Zu-Zhao Xiong, Ting-Ping Hou, Ran Wei. The conductance and magnetoresistance effect in a periodically magnetically modulated nanostructure |
| 1580 | -- | 1582 | Lei Zhang 0003, Bifeng Cui, Weiling Guo, Zhiqun Wang, Guangdi Shen. High-power transverse micro-stack weakly coupled laser diode bars |
| 1583 | -- | 1586 | Zengliang Shi, Dali Liu, Xiaolong Yan, Zhongmin Gao, Shiying Bai. Effect of oxygen partial pressure on conductivity type of MgZnO nanocrystalline thin films prepared by metal-organic chemical vapor deposition |
| 1587 | -- | 1593 | M. M. Habchi, A. Rebey, B. El Jani. AP-MOVPE of InGaAs on GaAs (0 0 1): Analysis of in situ reflectivity response |
| 1594 | -- | 1599 | Fortunato Pezzimenti, Francesco G. Della Corte, Roberta Nipoti. Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour |
| 1600 | -- | 1604 | Te-Hua Fang, Tong Hong Wang, Deng-Maw Lu, Wen-Chieh Lien. Structural characteristics of carbon nanostructures synthesized by ECR-CVD |
| 1605 | -- | 1612 | R. Srnánek, G. Irmer, D. Donoval, A. Vincze, B. Sciana, D. Radziewicz, M. Tlaczala. Quantitative analysis of doping profile on beveled p-type GaAs structures by micro-Raman spectroscopy |
| 1613 | -- | 1621 | Thomas Tsiolakis, Nikos Konofaos, G. Ph. Alexiou. Design, simulation and performance evaluation of a single-electron 2-4 decoder |
| 1622 | -- | 1625 | Mingjun Liu, Ping Chen, Qin Xue, Fangfang Jiang, Guohua Xie, Jingying Hou, Yi Zhao, Liying Zhang, Bin Li. Influence of connecting units thicknesses on tandem organic devices performances |
| 1629 | -- | 1633 | Hui-Zhao Zhuang, Bao-Li Li, Cheng-Shan Xue, Xiao-kai Zhang, Shi-Ying Zhang, De-Xiao Wang, Jia-Bing Shen. Growth of Nb-catalysed GaN nanowires |
| 1634 | -- | 1641 | Rajesh K. Tyagi, Anil Ahlawat, Manoj Pandey, Sujata Pandey. A new two-dimensional C-V model for prediction of maximum frequency of oscillation (f::max::) of deep submicron AlGaN/GaN HEMT for microwave and millimeter wave applications |
| 1642 | -- | 1648 | J. Arias, Luis Quintanilla, Lourdes Enríquez, J. Hernández-Mangas, J. Vicente, Jokin Segundo. A 1-GHz, multibit, continuous-time, delta-sigma ADC for Gigabit Ethernet |
| 1649 | -- | 1653 | Sh. M. Eladl. Analysis of interface recombination and self-absorption effect on the performance of QWIP-HBT-LED integrated device |
| 1654 | -- | 1658 | Zhihong Chen, Duanzheng Yao, Xi Zhang, Tianhong Fang. Polaron effect-dependent third-order optical susceptibility in a ZnS/CdSe quantum dot quantum well |
| 1659 | -- | 1662 | A. Arena, N. Donato, G. Saitta, S. Galvagno, C. Milone, A. Pistone. Photovoltaic properties of multi-walled carbon nanotubes deposited on n-doped silicon |
| 1663 | -- | 1670 | Rodrigo Trevisoli Doria, Antonio Cerdeira, Jean-Pierre Raskin, Denis Flandre, Marcelo Antonio Pavanello. Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation |
| 1671 | -- | 1677 | Nayan Patel, A. Ramesha, Santanu Mahapatra. Drive current boosting of n-type tunnel FET with strained SiGe layer at source |
| 1678 | -- | 1682 | Qi Wang, Xiaomin Ren, Feihua Wang, Jianyou Feng, Jihe Lv, Jing Zhou, Shiwei Cai, Hui Huang, Yongqing Huang. LP-MOCVD growth of ternary B::x::Ga::1-::::x::As epilayers on (0 0 1)GaAs substrates using TEB, TMGa and AsH::3:: |
| 1683 | -- | 1686 | Liang Shen, Wenbin Guo, Zhicheng Zhong, Guohui Zhu, Chen Tao, Ziran Liu, Jingran Zhou, Weiyou Chen. Water-soluble poly(3, 4-ethylenedioxythiophene)/nano-crystalline TiO::2:: heterojunction solar cells |
| 1687 | -- | 1692 | Hwann-Kaeo Chiou, Hsien-Jui Chen, Hsien-Yuan Liao, Shuw-Guann Lin, Yin-Cheng Chang. Design formula for band-switching capacitor array in wide tuning range low-phase-noise LC-VCO |
| 1693 | -- | 1703 | Ashis Kumer Biswas, Md. Mahmudul Hasan, Ahsan Raja Chowdhury, Hafiz Md. Hasan Babu. Efficient approaches for designing reversible Binary Coded Decimal adders |
| 1704 | -- | 1709 | Jingbo Shao, Guangsheng Ma, Zhi Yang, Ruixue Zhang. Test response reuse-based SoC core test compression and test scheduling for test application time minimization |
| 1710 | -- | 1713 | Weijun Luo, Xiaoliang Wang, Lunchun Guo, Hongling Xiao, Cuimei Wang, Junxue Ran, Jianping Li, Jinmin Li. Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD |
| 1714 | -- | 1727 | Ranjith Kumar, Volkan Kursun. Temperature-adaptive voltage tuning for enhanced energy efficiency in ultra-low-voltage circuits |
| 1728 | -- | 1735 | Ali Alaeldine, Nicolas Lacrampe, Alexandre Boyer, Richard Perdriau, Fabrice Caignet, Mohammed Ramdani, Etienne Sicard, M hamed Drissi. Comparison among emission and susceptibility reduction techniques for electromagnetic interference in digital integrated circuits |
| 1736 | -- | 1739 | Francesco Marraccini, Giuseppe de Vita, Stefano Di Pascoli, Giuseppe Iannaccone. Low-voltage nanopower clock generator for RFID applications |
| 1740 | -- | 1750 | Jani Miettinen, Ville Pekkanen, Kimmo Kaija, Pauliina Mansikkamäki, Juha Mäntysalo, Matti Mäntysalo, Juha Niittynen, Jussi Pekkanen, Taavi Saviauk, Risto Rönkkä. Inkjet printed System-in-Package design and manufacturing |
| 1751 | -- | 1760 | Soodeh Aghli Moghaddam, Nasser Masoumi. Analysis and simulation of a novel gradually low-K dielectric structure for crosstalk reduction in VLSI |
| 1761 | -- | 1769 | Bo Liu, Jing Lu, Yan Wang, Yang Tang. An effective parameter extraction method based on memetic differential evolution algorithm |
| 1770 | -- | 1773 | Ankit Kashyap, R. K. Chauhan. Effect of Ge profile design on the performance of an n-p-n SiGe HBT-based analog circuit |
| 1774 | -- | 1784 | Paolo Stefano Crovetti, Franco L. Fiori. Efficient BEM-based substrate network extraction in silicon SoCs |
| 1785 | -- | 1796 | Hui Zhang, Yang Zhao, Alex Doboli. A scalable sigma-space based methodology for modeling process parameter variations in analog circuits |
| 1797 | -- | 1808 | Maziar Goudarzi, Tohru Ishihara, Hiroto Yasuura. A software technique to improve lifetime of caches containing ultra-leaky SRAM cells caused by within-die V::th:: variation |
| 1809 | -- | 1816 | Hussam Al-Hertani, Dhamin Al-Khalili, Come Rozon. UDSM subthreshold leakage model for NMOS transistor stacks |
| 1817 | -- | 1828 | Stéphane Badel, Alexandre Schmid, Yusuf Leblebici. CMOS realization of two-dimensional mixed analog-digital Hamming distance discriminator circuits for real-time imaging applications |
| 1829 | -- | 1833 | Wei He, Zheng-xuan Zhang, En-xia Zhang, Wen-jie Yu, Hao Tian, Xi Wang. Practical considerations in the design of SRAM cells on SOI |
| 1834 | -- | 1842 | B. K. Kaushik, S. Sarkar. Crosstalk analysis for a CMOS gate driven inductively and capacitively coupled interconnects |
| 1843 | -- | 1851 | M. Jalali, A. Nabavi, M. K. Moravvej-Farshi, A. Fotowat-Ahmady. Low-noise differential transimpedance amplifier structure based on capacitor cross-coupled g::m::-boosting scheme |
| 1852 | -- | 1859 | V. Boscaino, P. Livreri, F. Marino, M. Minieri. Current-sensing technique for current-mode controlled voltage regulator modules |
| 1860 | -- | 1866 | Nam-Jin Oh. A low-noise mixer with an image-reject notch filter for 2.4 GHz applications |
| 1867 | -- | 1873 | Luis H. C. Ferreira, Tales Cleber Pimenta, Robson L. Moreno. A CMOS threshold voltage reference source for very-low-voltage applications |
| 1874 | -- | 1879 | Guoyi Yu, Xuecheng Zou. A novel current reference based on subthreshold MOSFETs with high PSRR |
| 1880 | -- | 1886 | Taikyeong T. Jeong. Implementation of low power adder design and analysis based on power reduction technique |