Chip to wafer copper direct bonding electrical characterization and thermal cycling - researchr publication related

researchr

You are not signed in
Sign in
Sign up

Yann Beilliard, Perceval Coudrain, Léa Di Cioccio, Stephane Moreau, Loic Sanchez, Brigitte Montmayeul, Thomas Signamarcheix, Rafael Estevez, Guillaume Parry. Chip to wafer copper direct bonding electrical characterization and thermal cycling. In 2013 IEEE International 3D Systems Integration Conference (3DIC), San Francisco, CA, USA, October 2-4, 2013. pages 1-7, IEEE, 2013. [doi]

The following publications are possibly variants of this publication:

3D interconnection using copper direct hybrid bonding for GaN on silicon waferC. Dubarry, L. Arnaud, M. L. Calvo Munoz, Gaëlle Mauguen, S. Moreau, R. Crochemore, Nicolas Bresson, Bernard Aventurier. 3dic 2021: 1-4 [doi]

200°C direct bonding copper interconnects : Electrical results and reliabilityLéa Di Cioccio, Rachid Taibi, C. Chappaz, S. Moreau, Laurent-Luc Chapelon, Thomas Signamarcheix. 3dic 2012: 1-4 [doi]

An innovative die to wafer 3D integration scheme: Die to wafer oxide or copper direct bonding with planarised oxide inter-die fillingLÃ©a Di Cioccio, Pierric Gueguen, Rachid Taibi, Thomas Signamarcheix, Laurent Bally, Laurent Vandroux, Marc Zussy, Sophie Verrun, JÃ©rÃ´me Dechamp, Patrick Leduc, Myriam Assous, David Bouchu, FranÃ§ois de Crecy, Laurent-Luc Chapelon, Laurent Clavelier. 3dic 2009: 1-4 [doi]

Die to Wafer Direct Hybid Bonding Demonstration with High Alignment Accuracy and Electrical YieldsAmadine Jouve, L. Sanchez, C. Castan, N. Bresson, F. Fournel, N. Raynaud, P. Metzger. 3dic 2019: 1-7 [doi]

runs on WebDSL