The following publications are possibly variants of this publication:
- Impact of Resistive-Bridging Defects in SRAM at Different Technology NodesRenan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine. et, 28(3):317-329, 2012. [doi]
- Analysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodesRenan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine. ets 2010: 132-137 [doi]
- Resistive-open defect injection in SRAM core-cell: analysis and comparison between 0.13 µm and 90 nm technologiesLuigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Magali Bastian. dac 2005: 857-862 [doi]
- Analyzing resistive-open defects in SRAM core-cell under the effect of process variabilityElena I. Vatajelu, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri, Arnaud Virazel, Nabil Badereddine. ets 2013: 1-6 [doi]