An ultra-high-density high-speed loadless four-transistor SRAM macro with a dual-layered twisted bit-line and a triple-well shield

Kenji Noda, Koujirou Matsui, Shinya Ito, Sadaaki Masuoka, Hiroyuki Kawamoto, Nobuyuki Ikezawa, Koichi Takeda 0001, Yoshiharu Aimoto, Naoto Nakamura, Hideo Toyoshima, Takahiro Iwasaki, Tadahiko Horiuchi. An ultra-high-density high-speed loadless four-transistor SRAM macro with a dual-layered twisted bit-line and a triple-well shield. In Proceedings of the IEEE 2000 Custom Integrated Circuits Conference, CICC 2000, Orlando, FL, USA, May 21-24, 2000. pages 283-286, IEEE, 2000. [doi]

Abstract

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