The following publications are possibly variants of this publication:
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- 15.8 A 22nm 10.8Mb Embedded STT-MRAM Macro Achieving over 200MHz Random-Read Access and a 10.4MB/s Write Throughput with an In-Field Programmable 0.3Mb MTJ-OTP for High-End MCUsTomoya Ogawa, Ken Matsubara, Yasuhiko Taito, Tomoya Saito, Masayuki Izuna, Koichi Takeda, Yoshinobu Kaneda, Takahiro Shimoi, Hidenori Mitani, Takashi Ito, Takashi Kono. isscc 2024: 290-292 [doi]
- A 28 nm Embedded Split-Gate MONOS (SG-MONOS) Flash Macro for Automotive Achieving 6.4 GB/s Read Throughput by 200 MHz No-Wait Read Operation and 2.0 MB/s Write Throughput at Tj of 170°CYasuhiko Taito, Takashi Kono, Masaya Nakano, Tomoya Saito, Takashi Ito, Kenji Noguchi, Hideto Hidaka, Tadaaki Yamauchi. jssc, 51(1):213-221, 2016. [doi]
- 7.3 A 28nm embedded SG-MONOS flash macro for automotive achieving 200MHz read operation and 2.0MB/S write throughput at Ti, of 170°CYasuhiko Taito, Masaya Nakano, Hiromi Okimoto, Daisuke Okada, Takashi Ito, Takashi Kono, Kenji Noguchi, Hideto Hidaka, Tadaaki Yamauchi. isscc 2015: 1-3 [doi]