A 0.4 µg Bias Instability and 1.2 µg Hz Noise Floor MEMS Silicon Oscillating Accelerometer With CMOS Readout Circuit

Xi Wang, Jian Zhao, Yang Zhao, Guo Ming Xia, An Ping Qiu, Yan Su, Yong Ping Xu. A 0.4 µg Bias Instability and 1.2 µg Hz Noise Floor MEMS Silicon Oscillating Accelerometer With CMOS Readout Circuit. J. Solid-State Circuits, 52(2):472-482, 2017. [doi]

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