The following publications are possibly variants of this publication:
- Study of RF N:::-::: LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RFH. Maanane, M. Masmoudi, J. Marcon, M. A. Belaïd, K. Mourgues, C. Tolant, K. Ketata, Ph. Eudeline. mr, 46(5-6):994-1000, 2006. [doi]
- Performance drifts of N-MOSFETs under pulsed RF life testM. A. Belaïd, M. Gares, K. Daoud, Olivier Latry. mr, 54(9-10):1851-1855, 2014. [doi]
- Performance analysis of S-parameter in N-MOSFET devices after thermal accelerated testsMohamed Ali Belaïd. mr, 91:8-14, 2018. [doi]