The following publications are possibly variants of this publication:
- Impacts of plasma process-induced damage on MOSFET parameter variability and reliabilityKoji Eriguchi, Kouichi Ono. mr, 55(9-10):1464-1470, 2015. [doi]
- Random telegraph noise as a new measure of plasma-induced charging damage in MOSFETsMasayuki Kamei, Yoshinori Takao, Koji Eriguchi, Kouichi Ono. icicdt 2014: 1-4 [doi]
- A new aspect of plasma-induced physical damage in three-dimensional scaled structures - Sidewall damage by stochastic straggling and sputteringKoji Eriguchi, Yoshinori Takao, Kouichi Ono. icicdt 2014: 1-5 [doi]
- Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequencyAsahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono. icicdt 2013: 191-194 [doi]