The following publications are possibly variants of this publication:
- A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm TechnologyTz-Yi Liu, Tian Hong Yan, Roy Scheuerlein, Yingchang Chen, Jeffrey KoonYee Lee, Gopinath Balakrishnan, Gordon Yee, Henry Zhang, Alex Yap, Jingwen Ouyang, Takahiko Sasaki, Ali Al-Shamma, Chin-Yu Chen, Mayank Gupta, Greg Hilton, Achal Kathuria, Vincent Lai, Masahide Matsumoto, Anurag Nigam, Anil Pai, Jayesh Pakhale, Chang Hua Siau, Xiaoxia Wu, Yibo Yin, Nicolas Nagel, Yoichiro Tanaka, Masaaki Higashitani, Tim Minvielle, Chandu Gorla, Takayuki Tsukamoto, Takeshi Yamaguchi, Mutsumi Okajima, Takayuki Okamura, Satoru Takase, Hirofumi Inoue, Luca Fasoli. jssc, 49(1):140-153, 2014. [doi]
- 2 64Gb MLC NAND flash memory in 24nm CMOS technologyKoichi Fukuda, Yoshihisa Watanabe, Eiichi Makino, Koichi Kawakami, Jumpei Sato, Teruo Takagiwa, Naoaki Kanagawa, Hitoshi Shiga, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro, Takeshi Ogawa, Makoto Iwai, Osamu Nagao, Junji Musha, Takatoshi Minamoto, Kosuke Yanagidaira, Yuya Suzuki, Dai Nakamura, Yoshikazu Hosomura, Hiromitsu Komai, Yuka Furuta, Mai Muramoto, Rieko Tanaka, Go Shikata, Ayako Yuminaka, Kiyofumi Sakurai, Manabu Sakai, Hong Ding, Mitsuyuki Watanabe, Yosuke Kato, Toru Miwa, Alex Mak, Masaru Nakamichi, Gertjan Hemink, Dana Lee, Masaaki Higashitani, Brian Murphy, Bo Lei, Yasuhiko Matsunaga, Kiyomi Naruke, Takahiko Hara. isscc 2011: 198-199 [doi]
- 2 32Gb MLC NAND flash memory in 34nm CMOSRaymond Zeng, Navneet Chalagalla, Dan Chu, Daniel Elmhurst, Matt Goldman, Chris Haid, Atif Huq, Takaaki Ichikawa, Joel Jorgensen, Owen Jungroth, Nishnat Kajla, Ravinder Kajley, Koichi Kawai, Jiro Kishimoto, Ali Madraswala, Tetsuji Manabe, Vikram Mehta, Midori Morooka, Katie Nguyen, Yoko Oikawa, Bharat Pathak, Rod Rozman, Tom Ryan, Andy Sendrowski, William Sheung, Martin Szwarc, Yasuhiro Takashima, Satoru Tamada, Toru Tanzawa, Tomoharu Tanaka, Mase Taub, Darshak Udeshi, Sjigekazu Yamada, Hiroyuki Yokoyama. isscc 2009: 236-237 [doi]
- A 48nm 32Gb 8-level NAND flash memory with 5.5MB/s program throughputSeung-Ho Chang, Sok-Kyu Lee, Seong Je Park, Min-Joong Jung, Jung-Chul Han, In-Soo Wang, Kyu-Hee Lim, Jung Hwan Lee, Ji-Hwan Kim, Won-Kyung Kang, Tai-Kyu Kang, Hee-Su Byun, Yujong Noh, Lee-Hyun Kwon, Bon-Kwang Koo, Myung Cho, Joong-Seob Yang, Yo-Hwan Koh. isscc 2009: 240-241 [doi]
- 2 32nm 32Gb MLC NAND-flash memory with 200MB/s asynchronous DDR interfaceHyunggon Kim, Jung-hoon Park, Ki Tae Park, Pansuk Kwak, Ohsuk Kwon, Chulbum Kim, Younyeol Lee, Sangsoo Park, Kyungmin Kim, Doohyun Cho, Juseok Lee, Jungho Song, Soowoong Lee, Hyukjun Yoo, Sanglok Kim, Seungwoo Yu, Sungjun Kim, SungSoo Lee, Kyehyun Kyung, Yong-Ho Lim, Chilhee Chung. isscc 2010: 442-443 [doi]
- A 32Gb MLC NAND-flash memory with Vth-endurance-enhancing schemes in 32nm CMOSChanghyuk Lee, Sok-Kyu Lee, Sunghoon Ahn, Jinhaeng Lee, Wonsun Park, Yongdeok Cho, Chaekyu Jang, Chulwoo Yang, Sanghwa Chung, In-Suk Yun, Byoungin Joo, Byoungkwan Jeong, Jeeyul Kim, Jeakwan Kwon, Hyunjong Jin, Yujong Noh, Jooyun Ha, Moonsoo Sung, Daeil Choi, Sanghwan Kim, Jeawon Choi, Taeho Jeon, Joong-Seob Yang, Yo-Hwan Koh. isscc 2010: 446-447 [doi]
- ReRAM technology evolution for storage class memory applicationYangyin Chen, Chris Petti. essderc 2016: 432-435 [doi]
- A 113mm2 32Gb 3b/cell NAND flash memoryTakuya Futatsuyama, Norihiro Fujita, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro, Teruhiko Kamei, Hiroaki Nasu, Makoto Iwai, Koji Kato, Yasuyuki Fukuda, Naoaki Kanagawa, Naofumi Abiko, Masahide Matsumoto, Toshihiko Himeno, Toshifumi Hashimoto, Yi-Ching Liu, Hardwell Chibvongodze, Takamitsu Hori, Manabu Sakai, Hong Ding, Yoshiharu Takeuchi, Hitoshi Shiga, Norifumi Kajimura, Yasuyuki Kajitani, Kiyofumi Sakurai, Kosuke Yanagidaira, Toshihiro Suzuki, Yuko Namiki, Tomofumi Fujimura, Man Mui, Hao Nguyen, Seungpil Lee, Alex Mak, Jeffery Lutze, Tooru Maruyama, Toshiharu Watanabe, Takahiko Hara, Shigeo Ohshima. isscc 2009: 242-243 [doi]
- Towards greener data centers with storage class memory: minimizing idle power waste through coarse-grain management in fine-grain scaleIn Hwan Doh, Young-Jin Kim, Jung Soo Park, Eunsam Kim, Jongmoo Choi, Donghee Lee, Sam H. Noh. cf 2010: 309-318 [doi]