Wim Schoenmaker - researchr alias

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Viewing Publication 1 - 23 from 23

2018

An index-aware parametric model order reduction method for parameterized quadratic differential-algebraic equationsNicodemus Banagaaya, Peter Benner, Lihong Feng, Peter Meuris, Wim Schoenmaker. amc, 319:409-424, 2018. [doi]

2017

Coupled circuit/EM simulation for radio frequency circuitsKai Bittner, Hans Georg Brachtendorf, Wim Schoenmaker, Pascal Reynier. dac 2017: [doi]

Exploration of robustness limits and ESD EMI impact in a protection device for advanced CMOS technologyPhilippe Galy, Wim Schoenmaker. mr, 76:680-684, 2017. [doi]

2016

Model Order Reduction for nanoelectronics coupled problems with many inputsNicodemus Banagaaya, Liong Feng, Wim Schoenmaker, Peter Meuris, Aarnout Wieers, Renaud Gillon, Peter Benner. date 2016: 313-318 [doi]

A new tightly-coupled transient electro-thermal simulation method for power electronicsQuan Chen, Wim Schoenmaker. iccad 2016: 16 [doi]

A fast time-domain EM-TCAD coupled simulation framework via matrix exponential with stiffness reductionQuan Chen, Wim Schoenmaker, Shih-Hung Weng, Chung-Kuan Cheng, Guan-Hua Chen, Lijun Jiang, Ngai Wong. ijcta, 44(4):833-850, 2016. [doi]

An Efficient Transient Electro-Thermal Simulation Framework for Power Integrated CircuitsQinggao Mei, Wim Schoenmaker, Shih-Hung Weng, Hao Zhuang, Chung-Kuan Cheng, Quan Chen. tcad, 35(5):832-843, 2016. [doi]

Shape optimization of a power MOS device under uncertaintiesPiotr Putek, Peter Meuris, Roland Pulch, E. Jan W. ter Maten, Michael Gunther, Wim Schoenmaker, Frederik Deleu, Aarnout Wieers. date 2016: 319-324 [doi]

Holistic coupled field and circuit simulationWim Schoenmaker, Peter Meuris, Christian Strohm, Caren Tischendorf. date 2016: 307-312 [doi]

2015

Coupled electro-magnetic field & Lorentz force effects in silicon and metal for ESD investigation in transient and harmonic regimesPhilippe Galy, Wim Schoenmaker. mr, 55(9-10):1532-1536, 2015. [doi]

Integrated front-end/back-end simulation of electromagnetic fields, Lorentz force effects and fast current surges in microelectronic protection devicesWim Schoenmaker, Philippe Galy. icicdt 2015: 1-4 [doi]

2014

Computation of Self-Induced Magnetic Field Effects Including the Lorentz Force for Fast-Transient Phenomena in Integrated-Circuit DevicesWim Schoenmaker, Quan Chen, Philippe Galy. tcad, 33(6):893-902, 2014. [doi]

2013

A Numerically Efficient Formulation for Time-Domain Electromagnetic-Semiconductor Cosimulation for Fast-Transient SystemsQuan Chen, Wim Schoenmaker, Guan-Hua Chen, Lijun Jiang, Ngai Wong. tcad, 32(5):802-806, 2013. [doi]

2012

A fast time-domain EM-TCAD coupled simulation framework via matrix exponentialQuan Chen, Wim Schoenmaker, Shih-Hung Weng, Chung-Kuan Cheng, Guan-Hua Chen, Lijun Jiang, Ngai Wong. iccad 2012: 422-428 [doi]

Large signal simulation of integrated inductors on semi-conducting substratesWim Schoenmaker, Michael Matthes, Bart De Smedt, Sascha Baumanns, Caren Tischendorf, Rick Janssen. date 2012: 1221-1226 [doi]

2011

An Effective Formulation of Coupled Electromagnetic-TCAD Simulation for Extremely High Frequency OnwardQuan Chen, Wim Schoenmaker, Peter Meuris, Ngai Wong. tcad, 30(6):866-876, 2011. [doi]

2002

Electromagnetic interconnects and passives modeling: softwareimplementation issuesWim Schoenmaker, Peter Meuris. tcad, 21(5):534-543, 2002. [doi]

Renormalization group meshes and the discretization of TCAD equationsWim Schoenmaker, Wim Magnus, Peter Meuris, Bert Maleszka. tcad, 21(12):1425-1433, 2002. [doi]

2001

On the calculation of gate tunneling currents in ultra-thin metal-insulator-semiconductor capacitorsWim Magnus, Wim Schoenmaker. mr, 41(1):31-35, 2001. [doi]

Strategy for electromagnetic interconnect modelingPeter Meuris, Wim Schoenmaker, Wim Magnus. tcad, 20(6):753-762, 2001. [doi]

x Epitaxial LayersK. G. Rajendran, Wim Schoenmaker. vlsi, 2001(1):317-321, 2001. [doi]

1993

Scaling considerations of the constitutive equations in a 2-D finite element heterojunction simulator PRISMRudi C. Vankemmel, Wim Schoenmaker, Rudi Cartuyvels, Kristin M. De Meyer. tcad, 12(11):1786-1797, 1993. [doi]

1990

AlGaAs/GaAs: High electron mobility transistor simulations with PRISMPhilippe Jansen, N. Maene, Walter De Raedt, S. Naten, D. Stubbe, Wim Schoenmaker, M. Van Rossum, Kristin M. De Meyer. ett, 1(4):433-437, 1990. [doi]

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