The following publications are possibly variants of this publication:
- Two 0.8 V, Highly Reliable RHBD 10T and 12T SRAM Cells for Aerospace ApplicationsAibin Yan, Zhihui He, Jing Xiang, Jie Cui, Yong Zhou, Zhengfeng Huang, Patrick Girard, Xiaoqing Wen. glvlsi 2022: 261-266 [doi]
- Design of A Highly Reliable and Low-Power SRAM With Double-Node Upset Recovery for Safety-critical ApplicationsAibin Yan, Jing Xiang, Zhengfeng Huang, Tianming Ni, Jie Cui 0004, Patrick Girard 0001, Xiaoqing Wen. itc-asia 2023: 1-6 [doi]
- Low-Power and High-Speed SRAM Cells With Double-Node Upset Self-Recovery for Reliable ApplicationsShuo Cai, Xinjie Liang, Zhu Huang, Weizheng Wang, Fei Yu 0009. tvlsi, 33(2):475-487, February 2025. [doi]
- Design of a Sextuple Cross-Coupled SRAM Cell with Optimized Access Operations for Highly Reliable Terrestrial ApplicationsAibin Yan, Zhen Wu, Jun Zhou, Yuanjie Hu, Yan Chen, Zuobin Ying, Xiaoqing Wen, Patrick Girard 0001. ats 2019: 55-60 [doi]