The following publications are possibly variants of this publication:
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- Evaluation of Read- and Write-Assist circuits for GeOI FinFET 6T SRAM cellsVita Pi-Ho Hu, Ming-Long Fan, Pin Su, Ching-Te Chuang. iscas 2014: 1122-1125 [doi]
- Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probabilityAditya Bansal, Rahul M. Rao, Jae-Joon Kim, Sufi Zafar, James H. Stathis, Ching-Te Chuang. mr, 49(6):642-649, 2009. [doi]
- Embedded SRAM ring oscillator for in-situ measurement of NBTI and PBTI degradation in CMOS 6T SRAM arrayMing-Chien Tsai, Yi-Wei Lin, Hao-I Yang, Ming-Hsien Tu, Wei-Chiang Shih, Nan-Chun Lien, Kuen-Di Lee, Shyh-Jye Jou, Ching-Te Chuang, Wei Hwang. vlsi-dat 2012: 1-4 [doi]
- Impacts of NBTI/PBTI and Contact Resistance on Power-Gated SRAM With High-kappa Metal-Gate DevicesHao-I Yang, Wei Hwang, Ching-Te Chuang. tvlsi, 19(7):1192-1204, 2011. [doi]
- Impacts of NBTI and PBTI on Power-gated SRAM with High-k Metal-gate DevicesHao-I Yang, Ching-Te Chuang, Wei Hwang. iscas 2009: 377-380 [doi]