The following publications are possibly variants of this publication:
- Analysis of Resistive-Open Defects in SRAM Sense AmplifiersAlexandre Ney, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Magali Bastian. tvlsi, 17(10):1556-1559, 2009. [doi]
- Un-Restored Destructive Write Faults Due to Resistive-Open Defects in the Write Driver of SRAMsA. Ney, Patrick Girard, Christian Landrault, Serge Pravossoudovitch, Arnaud Virazel, Magali Bastian. vts 2007: 361-368 [doi]
- Resistive-open defect injection in SRAM core-cell: analysis and comparison between 0.13 µm and 90 nm technologiesLuigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Magali Bastian. dac 2005: 857-862 [doi]
- Resistive-Open Defects in Embedded-SRAM Core Cells: Analysis and March Test SolutionLuigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Simone Borri, Magali Bastian Hage-Hassan. ats 2004: 266-271 [doi]
- Comparison of Open and Resistive-Open Defect Test Conditions in SRAM Address DecodersLuigi Dilillo, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Simone Borri. ats 2003: 250-255 [doi]