| 362 | -- | 368 | M. D. Giles, J. F. Gibbons. Calculation of Channeling Effects During Ion Implantation Using the Boltzmann Transport Equation |
| 369 | -- | 373 | A. M. Mazzone. Monte Carlo Methods in Defects Migration -- Spontaneous Annealing of Damage Induced by Ion Implantation |
| 374 | -- | 383 | J. Albers. Monte Carlo Calculation of One- and Two-Dimensional Particle and Damage Distributions for Ion-Implanted Dopants in Silicon |
| 384 | -- | 397 | Peter Pichler, Werner Jüngling, Siegfried Selberherr, Edgar Guerrero, Hans W. Pötzl. Simulation of Critical IC-Fabrication Steps |
| 398 | -- | 403 | Thye-Lai Tung, Dimitri A. Antoniadis. A Boundary Integral Equation Approach to Oxidation Modeling |
| 404 | -- | 407 | Albert Seidl, Milos Svoboda. Numerical Conformal Mapping for Treatment of Geometry Problems in Process Simulation |
| 408 | -- | 420 | Hal R. Yeager, Robert W. Dutton. An Approach to Solving Multiparticle Diffusion Exhibiting Nonlinear Stiff Coupling |
| 421 | -- | 430 | Jürgen Lorenz, Joachim Pelka, Heiner Ryssel, Albert Sachs, Albert Seidl, Milos Svoboda. COMPOSITE -- A Complete Modeling Program of Silicon Technology |
| 431 | -- | 435 | Craig C. Douglas. A Multilevel Solver for Boundary Value Problems |
| 436 | -- | 451 | Randolph E. Bank, William M. Coughran Jr., Wolfgang Fichtner, Eric Grosse, Donald J. Rose, R. Kent Smith. Transient Simulation of Silicon Devices and Circuits |
| 452 | -- | 461 | Kiyoyuki Yokoyama, Masaaki Tomizawa, Akira Yoshii, Tsuneta Sudo. Semiconductor Device Simulation at NTT |
| 462 | -- | 471 | Conor S. Rafferty, Mark R. Pinto, Robert W. Dutton. Iterative Methods in Semiconductor Device Simulation |
| 472 | -- | 481 | Steven E. Laux. Techniques for Small-Signal Analysis of Semiconductor Devices |
| 482 | -- | 488 | Toru Toyabe, H. Masuda, Y. Aoki, H. Shukuri, T. Hagiwara. Three-Dimensional Device Simulator CADDETH with Highly Convergent Matrix Solution Algorithms |
| 489 | -- | 495 | Joseph W. Jerome. The Role of Semiconductor Device Diameter and Energy-Band Bending in Convergence of Picard Iteration for Gummel s Map |
| 504 | -- | 512 | Charles L. Wilson, James L. Blue. Accurate Current Calculation in Two-Dimensional MOSFET Models |
| 513 | -- | 519 | H. S. Bennett, D. E. Fuoss. Improved Physics for Simulating Submicron Bipolar Devices |
| 520 | -- | 526 | Steven E. Laux, Bertrand M. Grossman. A General Control-Volume Formulation for Modeling Impact Ionization in Semiconductor Transport |
| 527 | -- | 530 | A. S. Shieh. On the Solution of Coupled System of PDE by a Multigrid Method |
| 531 | -- | 535 | James P. Lavine, Win-Chyi Chang, Constantine N. Anagnostopoulos, Bruce C. Burkey, E. T. Nelson. Monte Carlo Simulation of the Photoelectron Crosstalk in Silicon Imaging Devices |
| 536 | -- | 540 | C. Moglestue. A Monte Carlo Particle Study of the Intrinsic Noise Figure in GaAs MESFET s |
| 541 | -- | 545 | Umberto Ravaioli, Paolo Lugli, Mohamed A. Osman, David K. Ferry. Advantages of Collocation Methods Over Finite Differences in One-Dimensional Monte Carlo Simulations of Submicron Devices |
| 546 | -- | 553 | Jeffrey L. Gray, Mark S. Lundstrom. A Numerical Solution of Poisson s Equation with Application to C-V Analysis of III-V Heterojunction Capacitors |
| 561 | -- | 574 | Enrico Sangiorgi, Mark R. Pinto, Stanley E. Swirhun, Robert W. Dutton. Two-Dimensional Numerical Analysis of Latchup in a VLSI CMOS Technology |
| 575 | -- | 582 | Bernd Meinerzhagen, Heinz K. Dirks, Walter L. Engl. Quasi-Simultaneous Solution Method: A New Highly Efficient Strategy for Numerical MOST Simulations |
| 609 | -- | 620 | Dale E. Hocevar, Ping Yang, Timothy N. Trick, Berton D. Epler. Transient Sensitivity Computation for MOSFET Circuits |
| 621 | -- | 628 | S. Inohira, T. Shinmi, M. Nagata, Toru Toyabe, K. Iida. A Statistical Model Including Parameter Matching for Analog Integrated Circuits Simulation |
| 629 | -- | 635 | Hong June Park, Choong-Ki Kim. An Empirical Model for the Threshold Voltage of Enhancement NMOSFET s |
| 636 | -- | 650 | Chung-Yu Wu, Jen-Sheng Hwang, Chih Chang, Ching-Chu Chang. An Efficient Timing Model for CMOS Combinational Logic Gates |
| 651 | -- | 661 | San-Chin Fang, Yannis P. Tsividis, Omar Wing. Time- and Frequency-Domain Analysis of Linear Switched-Capacitor Networks Using State Charge Variables |
| 662 | -- | 667 | Makiko Kakizaki, Tsutomu Sugawara. A Modified Newton Method for the Steady-State Analysis |
| 668 | -- | 684 | Karem A. Sakallah, Stephen W. Director. SAMSON2: An Event Driven VLSI Circuit Simulator |
| 685 | -- | 693 | Eduard Cerny, Jan Gecsei. Simulation of MOS Circuits by Decision Diagrams |
| 694 | -- | 698 | P. Conway, Ciaran G. Cahill, W. A. Lane, S. U. Lidholm. Extraction of MOSFET Parameters Using the Simplex Direct Search Optimization Method |