| 1 | -- | 2 | John Barker. Guest Editorial |
| 1 | -- | 12 | Jun Dong Cho, Jin Youn Cho. Deep-submicron Placement Minimizing Crosstalk |
| 3 | -- | 0 | John R. Barker, Asen Asenov. IWCE-7 Committees |
| 5 | -- | 13 | Kausar Banoo, Jung-Hoon Rhew, Mark Lundstrom, Chi-Wang Shu, Joseph W. Jerome. Simulating Quasi-ballistic Transport in Si Nanotransistors |
| 13 | -- | 23 | John M. Emmert, Dinesh K. Bhatia. Two-dimensional Placement Using Tabu Search |
| 15 | -- | 21 | Asen Asenov, G. Slavcheva, S. Kaya, R. Balasubramaniam. Quantum Corrections to the 'Atomistic' MOSFET Simulations |
| 23 | -- | 36 | Paolo Lugli, Fabio Compagnone, Aldo Di Carlo, Andrea Reale. Simulation of Optoelectronic Devices |
| 25 | -- | 52 | Taras I. Golota, Sotirios G. Ziavras. A Universal, Dynamically Adaptable and Programmable Network Router for Parallel Computers |
| 37 | -- | 43 | E. Starikov, P. Shiktorov, V. Gruzinskis, Luca Reggiani, L. Varani, J. C. Vaissière, Jian H. Zhao. Monte Carlo Calculations of Amplification Spectrum for GaN THz Transit-time Resonance Maser |
| 45 | -- | 50 | N. Mori, C. Hamaguchi, L. Eaves, P. C. Main. Numerical Studies of Miniband Conduction in Quasi-One-Dimensional Superlattices |
| 51 | -- | 56 | Asim Kepkep, Umberto Ravaioli, Brian Winstead. Cluster-based Parallel 3-D Monte Carlo Device Simulation |
| 53 | -- | 60 | Edward Y. C. Cheng, Sartaj K. Sahni. A Fast Algorithm for Transistor Folding |
| 57 | -- | 61 | Jürgen Jakumeit, Torsten Mietzner, Umberto Ravaioli. Efficient Silicon Device Simulation with the Local Iterative Monte Carlo Method |
| 61 | -- | 68 | Shih-Chang Hsia, Chien-Cheng Tseng. A Size-optimization Design for Variable Length Coding Using Distributed Logic |
| 63 | -- | 68 | Enrico Ghillino, Carlo Garetto, Michele Goano, Giovanni Ghione, Enrico Bellotti, Kevin F. Brennan. Simplex Algorithm for Band Structure Calculation of Noncubic Symmetry Semiconductors: Application to III-nitride Binaries and Alloys |
| 69 | -- | 74 | Matsuto Ogawa, Ryuichiro Tominaga, Tanroku Miyoshi. Tight Binding Simulation of Quantum Transport in Interband Tunneling Devices |
| 69 | -- | 79 | Georgios Theodoridis, Spyros Theoharis, Dimitrios Soudris, Constantinos E. Goutis. A Probabilistic Power Estimation Method for Combinational Circuits Under Real Gate Delay Model |
| 75 | -- | 78 | Warren J. Gross, Dragica Vasileska, David K. Ferry. Ultra-small MOSFETs: The Importance of the Full Coulomb Interaction on Device Characteristics |
| 79 | -- | 84 | Min Shen, Ming-C. Cheng, Juin J. Liou. A Generalized Finite Element Method for Hydrodynamic Modeling of Short-channel Devices |
| 81 | -- | 99 | C. P. Ravikumar, Vikas Jain, Anurag Dod. Distributed Fault Simulation Algorithms on Parallel Virtual Machine |
| 85 | -- | 90 | P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, Javier Mateos, D. Pardo, Luca Reggiani, L. Varani, J. C. Vaissière. Langevin Forces and Generalized Transfer Fields for Noise Modelling in Deep Submicron Devices |
| 91 | -- | 95 | Francesco Chirico, Aldo Di Carlo, Paolo Lugli. Self-consistent Full-band Modeling of Quantum Semiconductor Nanostructures |
| 97 | -- | 102 | Alberto Bertoni, Paolo Bordone, Rossella Brunetti, Carlo Jacoboni, Susanna Reggiani. Numerical Simulation of Quantum Logic Gates Based on Quantum Wires |
| 103 | -- | 109 | Thomas D. Linton Jr., Shaofeng Yu, Reaz Shaheed. 3D Modelling of Fluctuation Effects in Highly Scaled VLSI Devices |
| 111 | -- | 115 | Amr Haggag, William McMahon, Karl Hess, Björn Fischer, Leonard Franklin Register. Impact of Scaling on CMOS Chip Failure Rate, and Design Rules for Hot Carrier Reliability |
| 117 | -- | 124 | Kevin F. Brennan, Enrico Bellotti, M. Farahmand, Hans-Erik Nilsson, P. P. Ruden, Y. Zhang. Monte Carlo Modeling of Wurtzite and 4H Phase Semiconducting Materials |
| 125 | -- | 129 | S. J. Wigger, Stephen M. Goodnick, Marco Saraniti. Hybrid Particle-based Full-band Analysis of Ultra-small MOS |
| 131 | -- | 134 | Ting-Wei Tang, Xinlin Wang, Haitao Gan, Mei-Kei Ieong. An Analytic Expression of Thermal Diffusion Coefficient for the Hydrodynamic Simulation of Semiconductor Devices |
| 135 | -- | 143 | Alexander A. Demkov, Xiaodong Zhang, Heather Loechelt. Theoretical Investigation of Ultrathin Gate Dielectrics |
| 145 | -- | 148 | Xavier Oriols, Jordi Suñé. Study of Electronic Transport in Tunneling Devices Using an Incoherent Superposition of Time Dependent Wave Packets |
| 149 | -- | 153 | M. Girlanda, Massimo Macucci. Simulation of a Complete Chain of QCA Cells with Realistic Potentials |
| 155 | -- | 161 | D. K. Ferry. Simulation at the Start of the New Millenium: Crossing the Quantum-Classical Threshold |
| 163 | -- | 167 | F. M. Bufler, P. Douglas Yoder, Wolfgang Fichtner. Strain-Dependence of Electron Transport in Bulk Si and Deep-Submicron MOSFETs |
| 169 | -- | 173 | J. R. Watling, Y.-P. Zhao, Asen Asenov, J. R. Barker. p-MOSFETs |
| 175 | -- | 178 | Torsten Mietzner, Jürgen Jakumeit, Umberto Ravaioli. Influence of Electron-Electron Interaction on Electron Distributions in Short Si-MOSFETs Analysed Using the Local Iterative Monte Carlo Technique |
| 179 | -- | 187 | Karl Hess, Umberto Ravaioli, M. Das Gupta, N. Aluru, Yves der Straaten, Robert S. Eisenberg. Simulation of Biological Ionic Channels by Technology Computer-Aided Design |
| 189 | -- | 192 | Xiaohui Wang, Wolfgang Porod. Analytic I-V Model for Single-Electron Transistors |
| 193 | -- | 198 | H.-O. Müller, D. A. Williams, Hiroshi Mizuta. Design Optimization of Coulomb Blockade Devices |
| 199 | -- | 204 | J. R. Barker, J. R. Watling, R. C. W. Wilkins. A Fast Algorithm for the Study of Wave-packet Scattering at Disordered Interfaces |
| 205 | -- | 209 | P. Gaubert, L. Varani, J. C. Vaissière, J. P. Nougier, E. Starikova, P. Shiktorov, V. Gruzhinskis. Scattered Packet Method for the Simulation of the Spatio-temporal Evolution of Local Perturbations |
| 211 | -- | 220 | Paolo Bordone, Alberto Bertoni, Rossella Brunetti, Carlo Jacoboni. Wigner Paths Method in Quantum Transport with Dissipation |
| 221 | -- | 227 | Haim Grubin, R. C. Buggeln. Wigner Function Methods in Modeling of Switching in Resonant Tunneling Devices |
| 229 | -- | 235 | W. K. Leung, R. J. Needs, Ganesh Rajagopalan, Satoshi Itoh, Sigeo Ihara. Quantum Monte Carlo Study of Silicon Self-interstitial Defects |
| 237 | -- | 244 | J. R. Barker. A Simple Model for the Quantum Hydrodynamic Simulation of Electron Transport in Quantum Confined Structures in the Presence of Vortices |
| 245 | -- | 249 | K. Horio, Y. Mitani, A. Wakabayashi, N. Kurosawa. Simulation of Drastic Lag Phenomena in GaAs-Based FETs for Large Voltage Swing |
| 251 | -- | 256 | J. Kang, X. He, D. Vasileska, D. K. Schroder. Optimization of FIBMOS Through 2D Silvaco ATLAS and 2D Monte Carlo Particle-based Device Simulations |
| 257 | -- | 264 | Magnus Willander, Yevgeny V. Mamontov, Jonathan Vincent. The Deterministic Circuit Model for Noise Influence on the Averaged Transient Responses of Large-scale Nonlinear ICs Analyzed with Itô's Stochastic Differential Equations |
| 265 | -- | 268 | Salvador Rodríguez, J. Banqueri, J. E. Carceller. Evaluation of an Equivalent Hole Effective Mass for Si/SiGe Structures |
| 269 | -- | 271 | Roman Durikovic. Visualization of Large-scale Atomic Interactions During the Melting and Crystallization Process |
| 273 | -- | 279 | O. Muscato, Vittorio Romano. Simulation of Submicron Silicon Diodes with a Non-Parabolic Hydrodynamical Model Based on the Maximum Entropy Principle |
| 281 | -- | 285 | C. Jungemann, B. Neinhüs, Bernd Meinerzhagen. Investigation of the Local Force Approximation in Numerical Device Simulation by Full-band Monte Carlo Simulation |
| 287 | -- | 293 | Eric A. B. Cole, Christopher M. Snowden, Shahzad Hussain. Hot Electron Modelling of HEMTs |
| 295 | -- | 299 | D. Oriato, Alison B. Walker, W.-N. Wang. Simulation of Widebandgap Multi-Quantum Well Light Emitting Diodes |
| 301 | -- | 304 | A. Harkar, R. W. Kelsall, J. N. Ellis. Monte Carlo Study of the Lateral Distribution of Gate Current Density Along the Channel of Submicron LDD MOSFET's |
| 305 | -- | 309 | A. Pecchia, B. Movaghar, R. W. Kelsall, A. Bourlange, Stephen D. Evans, B. J. Hickey, N. Boden. Electronic Transport in Self-organised Molecular Nanostructured Devices |
| 311 | -- | 315 | Elena Gnani, Susanna Reggiani, Renato Colle, Massimo Rudan. 2 Polymorphs |
| 317 | -- | 321 | K. G. Rajendran, Wim Schoenmaker. x Epitaxial Layers |
| 323 | -- | 328 | Michel Rousseau, J.-C. De Jaeger. 2D-Hydrodynamic Energy Model Including Avalanche Breakdown Phenomenon for Power Field Effect Transistors |
| 329 | -- | 334 | Min Shen, Wai-Kay Yip, Ming-C. Cheng, Juin J. Liou. An Upstream Flux Splitting Method for Hydrodynamic Modeling of Deep Submicron Devices |
| 335 | -- | 340 | Hideaki Tsuchiya, Brian Winstead, Umberto Ravaioli. Quantum Potential Approaches for Nano-scale Device Simulation |
| 341 | -- | 347 | A. Trellakis, Umberto Ravaioli. Three-dimensional Spectral Solution of Schrödinger Equation |
| 349 | -- | 354 | Marcello A. Anile, José A. Carrillo, Irene M. Gamba, Chi-Wang Shu. Approximation of the BTE by a Relaxation-time Operator: Simulations for a 50 nm-channel Si Diode |
| 355 | -- | 361 | Marcello A. Anile, S. F. Liotta, Giovanni Mascali, Salvatore Rinaudo. Two Dimensional MESFET Simulation of Transients and Steady State with Kinetic Based Hydrodynamical Models |
| 363 | -- | 367 | C. Pennetta, Luca Reggiani, G. Trefán, R. Cataldo, G. De Nunzio. A Percolative Approach to Reliability of Thin Film Interconnects and Ultra-thin Dielectrics |
| 369 | -- | 373 | Tanroku Miyoshi, Tetsuo Miyamoto, Matsuto Ogawa. Quantum Transport Modeling of Current Noise in Quantum Devices |
| 375 | -- | 380 | Rossella Brunetti, Alberto Bertoni, Paolo Bordone, Carlo Jacoboni. Dynamical Equation and Monte Carlo Simulation of the Two-time Wigner Function for Electron Quantum Transport |
| 381 | -- | 386 | M. Trovato, Luca Reggiani. Maximum Entropy Principle within A Total Energy Scheme for Hot-carrier Transport in Semiconductor Devices |
| 387 | -- | 391 | F. Sacconi, F. Della Sala, Aldo Di Carlo, Paolo Lugli. Microscopic Modeling of GaN-based Heterostructures |
| 393 | -- | 397 | J. Widany, G. Daminelli, Aldo Di Carlo, Paolo Lugli. Density-functional Based Tight-binding Calculations on Thiophene Polymorphism |
| 399 | -- | 404 | S. Barraud, P. Dollfus, S. Galdin, Raúl Rengel, María J. Martín, J. E. Velázquez. An lonised-impurity Scattering Model for 3D Monte Carlo Device Simulation with Discrete Impurity Distribution |
| 405 | -- | 411 | Mihail Nedjalkov, Hans Kosina, Siegfried Selberherr, Ivan Tomov Dimov. A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors |
| 413 | -- | 417 | Peiji Zhao, H. L. Cui, Dwight L. Woolard, Fliex Buot. Operation Principle of Resonant Tunneling THz Oscillator at Fixed Bias Voltages |
| 419 | -- | 424 | M. Gattobigio, Massimo Macucci, Giuseppe Iannaccone. Detection of Quantum Cellular Automaton Action in Silicon-on-insulator Cells |
| 425 | -- | 429 | Ettore Amirante, Giuseppe Iannaccone, B. Pellegrini. Three-dimensional Statistical Modeling of the Effects of the Random Distribution of Dopants in Deep Sub-micron nMOSFETs |
| 431 | -- | 434 | Giuseppe Iannaccone, S. Gennai. Program, Erase and Retention Times of Thin-oxide Flash-EEPROMs |
| 435 | -- | 439 | Karol Kalna, Asen Asenov, K. Elgaid, I. Thayne. Scaling of pHEMTs to Decanano Dimensions |
| 441 | -- | 446 | J. R. Watling, J. R. Barker, Asen Asenov. Soft Sphere Model for Electron Correlation and Scattering in the Atomistic Modelling of Semiconductor Devices |
| 447 | -- | 451 | D. A. Romanov, J. Eizenkop, V. V. Mitin. Dynamics of Non-equilibrium Short-wave-length Phonons in Semiconductor Heterostructures |
| 453 | -- | 458 | J. R. Barker, J. R. Watling. Simulation of Enhanced Interface Trapping Due to Carrier Dynamics in Warped Valence Bands in SiGe Devices |
| 459 | -- | 463 | M. Lorenzini, Luc Haspeslagh, J. Van Houdt, H. E. Maes. Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles |