839 | -- | 840 | Tibor Grasser, Siegfried Selberherr. Editorial |
841 | -- | 852 | Dieter K. Schroder. Negative bias temperature instability: What do we understand? |
853 | -- | 862 | Muhammad Ashraful Alam, Haldun Kufluoglu, D. Varghese, S. Mahapatra. A comprehensive model for PMOS NBTI degradation: Recent progress |
863 | -- | 872 | S. Chakravarthi, A. T. Krishnan, V. Reddy, S. Krishnan. Probing negative bias temperature instability using a continuum numerical framework: Physics to real world operation |
873 | -- | 879 | Helmut Puchner. NBTI product level reliability for a low-power SRAM technology |
880 | -- | 889 | M. Houssa, M. Aoulaiche, Stefan De Gendt, Guido Groeseneken, Marc M. Heyns. Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling |
890 | -- | 898 | P. M. Lenahan. Deep level defects involved in MOS device instabilities |
903 | -- | 911 | Sokrates T. Pantelides, L. Tsetseris, S. N. Rashkeev, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf. Hydrogen in MOSFETs - A primary agent of reliability issues |
913 | -- | 923 | E. Atanassova, Albena Paskaleva. Challenges of Ta::2::O::5:: as high-k dielectric for nanoscale DRAMs |
924 | -- | 929 | C. Y. Lu, H. C. Lin, Y.-J. Lee. Dynamic NBTI characteristics of PMOSFETs with PE-SiN capping |
930 | -- | 936 | Rihito Kuroda, Akinobu Teramoto, Kazufumi Watanabe, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa, Tadahiro Ohmi. Circuit level prediction of device performance degradation due to negative bias temperature stress |
937 | -- | 943 | W. B. Chen, J. P. Xu, P. T. Lai, Y. P. Li, S. G. Xu. Gate leakage properties of MOS devices with tri-layer high-k gate dielectric |
944 | -- | 952 | Chieh-Ming Lai, Yean-Kuen Fang, Chien Ting Lin, Chia-Wei Hsu, Wen-Kuan Yeh. The impacts of high tensile stress CESL and geometry design on device performance and reliability for 90 nm SOI nMOSFETs |
953 | -- | 958 | Partha Sarkar, Abhijit Mallik, Chandan Kumar Sarkar. Performance comparison of channel engineered deep sub-micrometer pseudo SOI n-MOSFETs |
959 | -- | 966 | Han-Chang Tsai. An investigation on the influence of electromagnetic interference induced in conducting wire of universal LEDs |
967 | -- | 971 | Chia-Huai Ho, Kuei-Shu Chang-Liao, Ya-Nan Huang, Tien-Ko Wang, T. C. Lu. Performance and reliability improvement of flash device by a novel programming method |
972 | -- | 985 | Hyong Tae Kim, Hae Jeong Yang, Seung Yub Baek. Iterative algorithm for automatic alignment by object transformation |
986 | -- | 995 | Dubravka Rocak, S. Macek, J. Sitek, Marko Hrovat, K. Bukat, Z. Drozd. A reliability study of the lead-free solder connections of miniature chip components on hybrid circuits |
996 | -- | 997 | Mile K. Stojcev. Mohamed Ilyas, Imad Mahgoud, Handbook of Sensor Networks: Compact Wireless and Wired Sensing Systems, Hardcover, pp 864, CRC Press, 2005, ISBN 0-8493-1968-4 |