| 1311 | -- | 1312 | Nathalie Labat, André Touboul. Editorial |
| 1313 | -- | 1321 | Michael G. Khazhinsky. ESD protection strategies in advanced CMOS SOI ICs |
| 1322 | -- | 1329 | D. Goguenheim, D. Pic, Jean-Luc Ogier. Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions |
| 1330 | -- | 1335 | Jaap Bisschop. Reliability methods and standards |
| 1336 | -- | 1342 | Cher Ming Tan, Nagarajan Raghavan. An approach to statistical analysis of gate oxide breakdown mechanisms |
| 1343 | -- | 1348 | P. Solomalala, J. Saiz, Michel Mermet-Guyennet, Alberto Castellazzi, Mauro Ciappa, X. Chauffleur, J. P. Fradin. Virtual reliability assessment of integrated power switches based on multi-domain simulation approach |
| 1349 | -- | 1352 | J. Martín-Martínez, Simone Gerardin, R. Rodríguez, M. Nafría, X. Aymerich, A. Cester, Alessandro Paccagnella, G. Ghidini. Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs |
| 1353 | -- | 1357 | C. Bestory, F. Marc, H. Levi. Statistical analysis during the reliability simulation |
| 1358 | -- | 1361 | Z. Wang, P. Zeelen, H. Tigelaar. Importance of multi-temp testing in automotive qualification and zero defects program |
| 1362 | -- | 1365 | Stefan Müller, Peter Egger. Investigation of low temperature SRAM and ROM failures to enable the replacement of cold test insertion by room temperature test |
| 1366 | -- | 1372 | Arnost Neugroschel, Gennadi Bersuker, Rino Choi. Applications of DCIV method to NBTI characterization |
| 1373 | -- | 1377 | D. Pic, D. Goguenheim, Jean-Luc Ogier. A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories |
| 1378 | -- | 1383 | Despina C. Moschou, M. A. Exarchos, Dimitrios N. Kouvatsos, G. J. Papaioannou, Apostolos T. Voutsas. Performance and reliability of SLS ELA polysilicon TFTs fabricated with novel crystallization techniques |
| 1384 | -- | 1388 | R. Bottini, S. Costantini, N. Galbiati, A. Ghetti, G. Ghidini, A. Mauri, C. Scozzari, A. Sebastiani. High voltage transistor degradation in NVM pump application |
| 1389 | -- | 1393 | R. Moonen, P. Vanmeerbeek, G. Lekens, Ward De Ceuninck, P. Moens, J. Boutsen. Lifetime modeling of intrinsic gate oxide breakdown at high temperature |
| 1394 | -- | 1399 | M. Gares, M. A. Belaïd, H. Maanane, M. Masmoudi, J. Marcon, K. Mourgues, Ph. Eudeline. Study of hot-carrier effects on power RF LDMOS device reliability |
| 1400 | -- | 1405 | D. Dankovic, I. Manic, V. Davidovic, S. Djoric-Veljkovic, S. Golubovic, Ninoslav Stojadinovic. Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs |
| 1406 | -- | 1410 | M. Alwan, B. Beydoun, K. Ketata, M. Zoaeter. Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses |
| 1411 | -- | 1415 | Sung Jun Jang, Dae Hyun Ka, Chong-Gun Yu, Kwan-Su Kim, Won-Ju Cho, Jong-Tae Park. Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs |
| 1416 | -- | 1418 | Stefano Aresu, Werner Kanert, Reinhard Pufall, Michael Goroll. Exceptional operative gate voltage induces negative bias temperature instability (NBTI) on n-type trench DMOS transistors |
| 1419 | -- | 1423 | A. Boukhenoufa, L. Pichon, C. Cordier. Two-dimensional numerical simulations of 1/f noise by GR mechanisms in thin film transistors: Effects of induced defect technology |
| 1424 | -- | 1428 | M. Lanza, M. Porti, M. Nafría, Guenther Benstetter, Werner Frammelsberger, H. Ranzinger, E. Lodermeier, G. Jaschke. Influence of the manufacturing process on the electrical properties of thin (k stacks observed with CAFM |
| 1429 | -- | 1433 | Anand Inani, Victor Koldyaev, Spencer Graves. Accelerated testing for time dependent dielectric breakdown (TDDB) evaluation of embedded DRAM capacitors using tantalum pentoxide |
| 1434 | -- | 1438 | F. V. Farmakis, Giannis P. Kontogiannopoulos, Dimitrios N. Kouvatsos, Apostolos T. Voutsas. Degradation of double-gate polycrystalline silicon TFTs due to hot carrier stress |
| 1439 | -- | 1443 | Hubert Enichlmair, S. Carniello, J. M. Park, Rainer Minixhofer. Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor |
| 1444 | -- | 1449 | Augusto Tazzoli, F. A. Marino, M. Cordoni, A. Benvenuti, P. Colombo, Enrico Zanoni, Gaudenzio Meneghesso. Holding voltage investigation of advanced SCR-based protection structures for CMOS technology |
| 1450 | -- | 1455 | Michael Heer, Scrgey Bychikhin, W. Mamanee, Dionyz Pogany, A. Heid, P. Grombach, M. Klaussner, W. Soppa, B. Ramler. Experimental and numerical analysis of current flow homogeneity in low voltage SOI multi-finger gg-NMOS and NPN ESD protection devices |
| 1456 | -- | 1461 | Yuan Gao, Nicolas Guitard, Christophe Salamero, Marise Bafleur, Laurent Bary, Laurent Escotte, Patrick Gueulle, Lionel Lescouzères. Identification of the physical signatures of CDM induced latent defects into a DC-DC converter using low frequency noise measurements |
| 1462 | -- | 1467 | P. Coppens, G. Jenicot, H. Casier, F. De Pestel, F. Depuydt, N. Martens, P. Moens. TLP Characterization of large gate width devices |
| 1468 | -- | 1472 | J. R. Lloyd. Black s law revisited - Nucleation and growth in electromigration failure |
| 1473 | -- | 1477 | Linda Milor, Changsoo Hong. Backend dielectric breakdown dependence on linewidth and pattern density |
| 1478 | -- | 1482 | Changsoo Hong, Linda Milor. Modeling of the breakdown mechanisms for porous copper/low-k process flows |
| 1483 | -- | 1491 | Cadmus A. Yuan, Olaf van der Sluis, G. Q. (Kouchi) Zhang, Leo J. Ernst, Willem D. van Driel, Richard B. R. van Silfhout. Molecular simulation on the material/interfacial strength of the low-dielectric materials |
| 1492 | -- | 1496 | Alessandro Marras, M. Impronta, Ilaria De Munari, M. G. Valentini, A. Scorzoni. Reliability assessment of multi-via Cu-damascene structures by wafer-level isothermal electromigration tests |
| 1497 | -- | 1501 | Wei Li, Cher Ming Tan. Enhanced finite element modelling of Cu electromigration using ANSYS and matlab |
| 1502 | -- | 1505 | Shih-Hung Chen, Ming-Dou Ker. Active ESD protection circuit design against charged-device-model ESD event in CMOS integrated circuits |
| 1506 | -- | 1511 | C.-C. Chiu, H. H. Chang, C. C. Lee, C.-C. Hsia, K. N. Chiang. Reliability of interfacial adhesion in a multi-level copper/low-k interconnect structure |
| 1512 | -- | 1516 | Michael Goroll, Werner Kanert, Reinhard Pufall, Stefano Aresu. Analysis of ESD protection structure behaviour after ageing as new approach for system level reliability of automotive power devices |
| 1517 | -- | 1522 | Felix Beaudoin, Kevin Sanchez, Philippe Perdu. Dynamic laser stimulation techniques for advanced failure analysis and design debug applications |
| 1523 | -- | 1528 | Rudolf Schlangen, Uwe Kerst, Christian Boit, T. Malik, R. Jain, Ted Lundquist. Non destructive 3D chip inspection with nano scale potential by use of backside FIB and backscattered electron microscopy |
| 1529 | -- | 1533 | A. Pugatschow, R. Heiderhoff, L. J. Balk. Time resolved determination of electrical field distributions within dynamically biased power devices by spectral EBIC investigations |
| 1534 | -- | 1538 | Euan Ramsay, K. A. Serrels, M. J. Thomson, A. J. Waddie, R. J. Warburton, M. R. Taghizadeh, D. T. Reid. Three-dimensional nanometric sub-surface imaging of a silicon flip-chip using the two-photon optical beam induced current method |
| 1539 | -- | 1544 | V. Dubec, Scrgey Bychikhin, Dionyz Pogany, Erich Gornik, Tilo Brodbeck, Wolfgang Stadler. Backside interferometric methods for localization of ESD-induced leakage current and metal shorts |
| 1545 | -- | 1549 | Peter Egger, Markus Grützner, Christian Burmer, Fabien Dudkiewicz. Application of time resolved emission techniques within the failure analysis flow |
| 1550 | -- | 1554 | Stephane Bianic, Stéphanie Allemand, Grégory Kerrosa, Pascal Scafidi, Didier Renard. Advanced backside failure analysis in 65 nm CMOS technology |
| 1555 | -- | 1560 | Cher Ming Tan, Stanny Yanuar, Tai-Chong Chai. Finite element modeling of capacitive coupling voltage contrast |
| 1565 | -- | 1568 | Joy Y. Liao, Howard L. Marks, F. Beaudoin. OBIRCH analysis of electrically stressed advanced graphic ICs |
| 1569 | -- | 1573 | S. Debleds, J. P. Rebrasse, L. Dantas de Morais, I. Frapreau, R. Perdreau, B. Morillon. Localization of sensitive areas of power AC switch under thermal laser stimulation |
| 1574 | -- | 1579 | Peter Jacob, Giovanni Nicoletti, Florian Hauf. Device decapsulated (and/or depassivated) - Retest ok - What happened? |
| 1580 | -- | 1584 | Arijit Roy, Cher Ming Tan, Sean J. O Shea, Kedar Hippalgaonkar, Wulf Hofbauer. Room temperature observation of point defect on gold surface using thermovoltage mapping |
| 1585 | -- | 1589 | R. Zelsacher, A. C. G. Wood, E. Bacher, E. Prax, K. Sorschag, J. Krumrey, J. Baumgartl. A novel SIMS based approach to the characterization of the channel doping profile of a trench MOSFET |
| 1590 | -- | 1594 | A. Crosson, L. Escotte, M. Bafleur, D. Talbourdet, L. Crétinon, Philippe Perdu, G. Perez. Long-term reliability of silicon bipolar transistors subjected to low constraints |
| 1595 | -- | 1598 | C. N. Mc Auley, Andreas Rummel, F. W. Keating, Stephan Kleindiek. 3D failure analysis in depth profiles of sequentially made FIB cuts |
| 1599 | -- | 1603 | J. Adrian, N. Rodriguez, F. Essely, G. Haller, C. Grosjean, A. Portavoce, C. Girardeaux. Investigation of a new method for dopant characterization |
| 1604 | -- | 1608 | Hung-Sung Lin, Chun-Ming Chen, Kuo-Hsiung Chen, Afung Wang, C. H. Chao. A case study of defects due to process marginalities in deep sub-micron technology |
| 1609 | -- | 1613 | C. Le Roux, L. Lopez, Abdellatif Firiti, Jean-Luc Ogier, F. Lalande, R. Laffont, G. Micolau. A new method to quantify retention-failed cells of an EEPROM CAST |
| 1614 | -- | 1618 | L. Dantas de Morais, F. Allanic, F. Roqueta, J. P. Rebrasse. Thermal approach of defects generation on copper/organic dielectric interface due to SEM inspections |
| 1619 | -- | 1624 | Mitsuo Fukuda. Reliability of semiconductor lasers used in current communication systems and sensing equipment |
| 1625 | -- | 1629 | Matteo Meneghini, L. Trevisanello, C. Sanna, G. Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni. High temperature electro-optical degradation of InGaN/GaN HBLEDs |
| 1630 | -- | 1633 | M. Bouya, D. Carisetti, N. Malbert, Nathalie Labat, Philippe Perdu, J. C. Clement, M. Bonnet, G. Pataut. Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC |
| 1634 | -- | 1638 | D. Lachenal, A. Bravaix, F. Monsieur, Yannick Rey-Tauriac. Degradation mechanism understanding of NLDEMOS SOI in RF applications |
| 1639 | -- | 1642 | M. Faqir, G. Verzellesi, Fausto Fantini, Francesca Danesin, F. Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, Antonio Castaldini, Nathalie Labat, A. Touboul, Christian Dua. Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs |
| 1643 | -- | 1648 | O. Pajona, Christelle Aupetit-Berthelemot, Jean-Michel Dumas. A study of metamorphic HEMT technological improvements: Impact on parasitic effect electrical models |
| 1649 | -- | 1652 | Scrgey Bychikhin, T. Swietlik, T. Suski, S. Porowski, P. Perlin, Dionyz Pogany. Thermal analysis of InGaN/GaN (GaN substrate) laser diodes using transient interferometric mapping |
| 1653 | -- | 1657 | P. Burgaud, L. Constancias, G. Martel, C. Savina, D. Mesnager. Preliminary reliability assessment and failure physical analysis on AlGaN/GaN HEMTs COTS |
| 1658 | -- | 1662 | Ming-Chih Yew, Chan-Yen Chou, Kuo-Ning Chiang. Reliability assessment for solders with a stress buffer layer using ball shear strength test and board-level finite element analysis |
| 1663 | -- | 1667 | W. C. Maia Filho, M. Brizoux, Hélène Frémont, Yves Danto. Torsion test applied for reballing and solder paste volume evaluation |
| 1668 | -- | 1672 | Geneviève Duchamp, D. Castagnet, Alain Meresse. Near-field EMC study to improve electronic component reliability |
| 1680 | -- | 1684 | Manoubi Auguste Bahi, Pascal Lecuyer, Hélène Frémont, Jean-Pierre Landesman. Sequential environmental stresses tests qualification for automotive components |
| 1685 | -- | 1689 | Xiaosong Ma, Kaspar M. B. Jansen, Leo J. Ernst, W. D. van Driel, Olaf van der Sluis, G. Q. Zhang. Characterization of moisture properties of polymers for IC packaging |
| 1690 | -- | 1695 | Michel Mermet-Guyennet, X. Perpiñà, M. Piton. Revisiting power cycling test for better life-time prediction in traction |
| 1696 | -- | 1700 | Andrea Irace, Giovanni Breglio, Paolo Spirito. New developments of THERMOS:::3:::, a tool for 3D electro-thermal simulation of smart power MOSFETs |
| 1701 | -- | 1706 | X. Perpiñà, M. Piton, Michel Mermet-Guyennet, Xavier Jordà, José Millán. Local thermal cycles determination in thermosyphon-cooled traction IGBT modules reproducing mission profiles |
| 1707 | -- | 1712 | D. Barlini, Mauro Ciappa, Michel Mermet-Guyennet, Wolfgang Fichtner. Measurement of the transient junction temperature in MOSFET devices under operating conditions |
| 1713 | -- | 1718 | Alberto Castellazzi, Mauro Ciappa, Wolfgang Fichtner, M. Piton, Michel Mermet-Guyennet. A study of the threshold-voltage suitability as an application-related reliability indicator for planar-gate non-punch-through IGBTs |
| 1719 | -- | 1724 | M. Bouarroudj, Zoubir Khatir, J. P. Ousten, F. Badel, L. Dupont, Stéphane Lefebvre. Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions |
| 1725 | -- | 1729 | J. Urresti-Ibañez, Alberto Castellazzi, M. Piton, J. Rebollo, Michel Mermet-Guyennet, Mauro Ciappa. Robustness test and failure analysis of IGBT modules during turn-off |
| 1730 | -- | 1734 | A. Benmansour, Stephane Azzopardi, J. C. Martin, E. Woirgard. Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions |
| 1735 | -- | 1740 | B. Khong, M. Legros, P. Tounsi, Ph. Dupuy, X. Chauffleur, C. Levade, G. Vanderschaeve, E. Scheid. Characterization and modelling of ageing failures on power MOSFET devices |
| 1741 | -- | 1745 | M. Holz, G. Hultsch, T. Scherg, R. Rupp. Reliability considerations for recent Infineon SiC diode releases |
| 1746 | -- | 1750 | Carmine Abbate, G. Busatto, L. Fratelli, Francesco Iannuzzo, B. Cascone, R. Manzo. The robustness of series-connected high power IGBT modules |
| 1751 | -- | 1755 | W. Lajnef, J.-M. Vinassa, O. Briat, H. El Brouji, E. Woirgard. Monitoring fading rate of ultracapacitors using online characterization during power cycling |
| 1756 | -- | 1760 | Giovanni Breglio, Andrea Irace, E. Napoli, Paolo Spirito, K. Hamada, T. Nishijima, T. Ueta. Study of a failure mechanism during UIS switching of planar PT-IGBT with current sense cell |
| 1761 | -- | 1766 | F. Lang, U. Scheuermann. Reliability of spring pressure contacts under environmental stress |
| 1767 | -- | 1772 | L. Dupont, Stéphane Lefebvre, M. Bouaroudj, Zoubir Khatir, Jean-Claude Faugières. Failure modes on low voltage power MOSFETs under high temperature application |
| 1773 | -- | 1778 | Ly. Benbahouche, A. Merabet, A. Zegadi. Numerical analysis and comparative study of short circuit stress in IGBTs devices (IR, IXYS) |
| 1779 | -- | 1783 | T. Lhommeau, X. Perpiñà, C. Martin, R. Meuret, Michel Mermet-Guyennet, M. Karama. Thermal fatigue effects on the temperature distribution inside IGBT modules for zone engine aeronautical applications |
| 1784 | -- | 1789 | X. Perpiñà, Alberto Castellazzi, M. Piton, Michel Mermet-Guyennet, José Millán. Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities |
| 1790 | -- | 1794 | Michael Glavanovics, Helmut Köck, Vladimir Kosel, Tobias Smorodin. Flexible active cycle stress testing of smart power switches |
| 1795 | -- | 1799 | Jae-Seong Jeong, Soon-Ha Hong, Sang-Deuk Park. Field failure mechanism and improvement of EOS failure of integrated IGBT inverter modules |
| 1800 | -- | 1805 | A. Benmansour, Stephane Azzopardi, J. C. Martin, E. Woirgard. A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simulation |
| 1806 | -- | 1811 | D. M. Tanner, T. B. Parson, A. D. Corwin, Jeremy A. Walraven, J. W. Wittwer, B. L. Boyce, S. R. Winzer. Science-based MEMS reliability methodology |
| 1812 | -- | 1817 | E. Papandreou, M. Lamhamdi, C. M. Skoulikidou, Patrick Pons, G. Papaioannou, Robert Plana. Structure dependent charging process in RF MEMS capacitive switches |
| 1818 | -- | 1822 | J. Ruan, N. Nolhier, M. Bafleur, L. Bary, Fabio Coccetti, T. Lisec, Robert Plana. Electrostatic discharge failure analysis of capacitive RF MEMS switches |
| 1823 | -- | 1826 | Willem D. van Driel, D. G. Yang, Cadmus A. Yuan, M. van Kleef, G. Q. (Kouchi) Zhang. Mechanical reliability challenges for MEMS packages: Capping |
| 1836 | -- | 1840 | V. Maingot, Jean Baptiste Ferron, Régis Leveugle, Vincent Pouget, Alexandre Douin. Configuration errors analysis in SRAM-based FPGAs: Software tool and practical results |
| 1841 | -- | 1845 | V. Davidovic, Dimitrios N. Kouvatsos, Ninoslav Stojadinovic, Apostolos T. Voutsas. Influence of polysilicon film thickness on radiation response of advanced excimer laser annealed polycrystalline silicon thin film transistors |