| 0 | -- | 0 | Wolfgang Porod. Guest Editorial |
| 0 | -- | 0 | Jun Dong Cho. Guest Editorial |
| 1 | -- | 11 | Shinichi Takagi. Two-dimensional Carrier Transport in Si MOSFETs |
| 1 | -- | 13 | Dimitrios Karayiannis, Spyros Tragoudas. Clustering Network Modules with Different Implementations for Delay Minimization |
| 1 | -- | 0 | Carl L. Gardner. Guest Editorial |
| 3 | -- | 7 | Nobuyuki Sano, Akira Yoshii. Quantum Kinetic Transport under High Electric Fields |
| 9 | -- | 12 | Roger K. Lake, Gerhard Klimeck, R. Chris Bowen, Dejan Jovanovic, Paul Sotirelis, William R. Frensley. A Generalized Tunneling Formula for Quantum Device Modeling |
| 13 | -- | 19 | Jeff Bude. Monte Carlo Simulations of Impact Ionization Feedback in MOSFET Structures |
| 13 | -- | 16 | H. Ueno, S. Yamakawa, C. Hamaguchi, K. Miyatsuji. Monte Carlo Simulation of HEMT based on Self-Consistent Method |
| 15 | -- | 30 | Gustavo E. Téllez, Majid Sarrafzadeh. On Rectilinear Distance-Preserving Trees |
| 17 | -- | 20 | Carl L. Gardner, Christian A. Ringhofer. The Quantum Hydrodynamic Smooth Effective Potential |
| 21 | -- | 25 | Dragica Vasileska, Terry Eldridge, Paolo Bordone, David K. Ferry. Quantum Transport Simulation of the DOS function, Self-Consistent Fields and Mobility in MOS Inversion Layers |
| 21 | -- | 27 | R. W. Kelsall, A. J. Lidsey. Inclusion of Quantum Confinement Effects in Self-Consistent Monte Carlo Device Simulations |
| 27 | -- | 30 | S. Yamakawa, H. Ueno, Kotaro Taniguchi, C. Hamaguchi, K. Miyatsuji, K. Masaki, U. Ravaioli. Electron Mobility and Monte Carlo device simulation of MOSFETs |
| 29 | -- | 34 | Eric A. B. Cole, Tobias Boettcher, Christopher M. Snowden. Two-dimensional Modelling of HEMTs Using Multigrids with Quantum Correction |
| 31 | -- | 34 | George Edwards, D. K. Ferry. Lattice Effects in the Complex Subband Dispersion of 2DEG Semiconductor Waveguide Structures Subjected to a Perpendicular Magnetic Field |
| 31 | -- | 57 | José Luis Neves, Eby G. Friedman. Automated Synthesis of Skew-Based Clock Distribution Networks |
| 35 | -- | 40 | Mark Peskin, Christine M. Maziar. MOMENTS: The Modular Monte Carlo Environment for Charge Transport Simulation, Overview and Applications |
| 35 | -- | 38 | Christoph Wasshuber, Hans Kosina. Simulation of a Single Electron Tunnel Transistor with Inclusion of Inelastic Macroscopic Quantum Tunneling of Charge |
| 39 | -- | 41 | Alexander N. Korotkov. Possible Wireless Single-Electron Logic Biased by Electric Field |
| 41 | -- | 45 | F. M. Bufler, P. Graf, B. Meinerzhagen. High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation: Full Band Versus Analytic Band Models |
| 43 | -- | 46 | Konstantin K. Likharev, Alexander N. Korotkov. Single-Electron Parametron |
| 47 | -- | 51 | Henry K. Harbury, Wolfgang Porod. Parallel Computation for Electronic Waves in Quantum Corrals |
| 47 | -- | 51 | D. Z.-Y. Ting, Erik S. Daniel, T. C. Mcgill. Interface Roughness Effects in Ultra-Thin Tunneling Oxides |
| 53 | -- | 56 | W.-K. Shih, S. Jallepalli, C.-F. Yeap, Mahbub Rashed, C. M. Maziar, A. F. Tasch Jr.. A Monte Carlo Study of Electron Transport in Silicon nMOSFET Inversion Layers |
| 53 | -- | 58 | Christopher M. Snowden. Modeling of Thermal Effects in Semiconductor Structures |
| 57 | -- | 60 | Leonardo R. C. Fonseca, Alexander N. Korotkov, Konstantin K. Likharev. SENECA: a New Program for the Analysis of Single-Electron Devices |
| 59 | -- | 72 | Ashok Vittal, Malgorzata Marek-Sadowska. Power Distribution Synthesis for VLSI |
| 59 | -- | 64 | Alain Greiner, L. Varani, Luca Reggiani, Maria Cristina Vecchi, T. Kuhn, P. Golinelli. Carrier Thermal Conductivity: Analysis and Application to Submicron-Device Simulation |
| 61 | -- | 64 | H. L. Grubin, T. R. Govindan. Quantum Contributions and Violations of the Classical Law of Mass Action |
| 65 | -- | 67 | Rimon Ikeno, Hiroshi Ito, Kunihiro Asada. One-Dimensional Analysis of Subthreshold Characteristics of SOI-MOSFET Considering Quantum Mechanical Effects |
| 65 | -- | 74 | Mathieu Kemp, Vladimiro Mujica, Adrian E. Roitberg, Mark A. Ratner. Molecular Wire Interconnects: Chemical Structural Control, Resonant Tunneling and Length Dependence |
| 69 | -- | 72 | B. A. Sanborn. Total Dielectric Function Approach to the Electron Boltzmann Equation for Scattering from a Two-Dimensional Coupled Mode System |
| 73 | -- | 77 | R. Khoie. A Study of Transconductance Degradation in HEMT Using a Self-consistent Boltzmann-Poisson-Schrödinger Solver |
| 73 | -- | 84 | Shashidhar Thakur, Kai-Yuan Chao, D. F. Wong. Minimum Crosstalk Vertical Layer Assignment for Three-Layer VHV Channel Routing |
| 75 | -- | 78 | Bob Eisenberg. Ionic Channels in Biological Membranes: Natural Nanotubes Described by the Drift-Diffusion Equations |
| 79 | -- | 86 | Gerhard Klimeck, Dan Blanks, Roger K. Lake, R. Chris Bowen, Chenjing L. Fernando, Manhua Leng, William R. Frensley, Dejan Jovanovic, Paul Sotirelis. Writing Research Software in a Large Group for the NEMO Project |
| 79 | -- | 82 | Joseph W. Parks Jr., Kevin F. Brennan, Larry E. Tarof. Macroscopic Device Simulation of InGaAs/InP Based Avalanche Photodiodes |
| 83 | -- | 86 | Jian Ping Sun, George I. Haddad. Self-Consistent Scattering Calculation of Resonant Tunneling Diode Characteristics |
| 85 | -- | 95 | Kyoung-Son Jhang, Soonhoi Ha, Chu Shik Jhon. Simulated Annealing Approach to Crosstalk Minimization in Gridded Channel Routing |
| 87 | -- | 91 | Benjamin Klein, Leonard Franklin Register, Karl Hess, Dennis Deppe. Theory and Modeling of Lasing Modes in Vertical Cavity Surface Emitting Lasers |
| 87 | -- | 90 | A. P. Jauho, M. B. Bønsager, K. Flensberg, B. Y.-K. Hu, J. Kinaret. Microscopic Theory of Transconductivity |
| 91 | -- | 95 | Asen Asenov, Andrew R. Brown, Scott Roy, J. R. Barker. Topologically Rectangular Grids in the Parallel Simulation of Semiconductor Devices |
| 93 | -- | 98 | Günther Zandler, Ralph Oberhuber, D. Liebig, Peter Vogl, Marco Saraniti, Paolo Lugli. Cellular Automaton Study of Time-Dynamics of Avalanche Breakdown in IMPATT Diodes |
| 97 | -- | 110 | Michael J. Alexander, James P. Cohoon, Joseph L. Ganley, Gabriel Robins. Placement and Routing for Performance-Oriented FPGA Layout |
| 97 | -- | 101 | C. David Levermore. Moment Closure Hierarchies for the Boltzmann-Poisson Equation |
| 99 | -- | 103 | Andrew R. Brown, Asen Asenov, John R. Barker. 3D Parallel Finite Element Simulation of In-Cell Breakdown in Lateral-Channel IGBTs |
| 103 | -- | 106 | Hiroshi Mizuta. Three-Dimensional S-Matrix Simulation of Single-Electron Resonant Tunnelling Through Random Ionised Donor States |
| 105 | -- | 109 | A. Trellakis, A. T. Galick, A. Pacelli, Umberto Ravaioli. Comparison of Iteration Schemes for the Solution of the Multidimensional Schrödinger-Poisson Equations |
| 107 | -- | 110 | Gerhard Klimeck, Roger K. Lake, Chris R. Bowen, Chenjing L. Fernando, William R. Frensley. Resolution of Resonances in a General Purpose Quantum Device Simulator (NEMO) |
| 111 | -- | 115 | Marco Saraniti, Günther Zandler, Gabriele F. Formicone, Stephen M. Goodnick. Cellular Automata Studies of Vertical Silicon Devices |
| 111 | -- | 115 | Ming Y. Kao, Donald J. Rose, Hai Shao. Gridding and Discretization For Divergence Form (Semiconductor-Like) PDEs |
| 111 | -- | 129 | André DeHon, Thomas F. Knight Jr.. High Performance, Point-to-Point, Transmission Line Signaling |
| 117 | -- | 121 | Andrew P. Kuprat, David Cartwright, J. Tinka Gammel, Denise George, Brian Kendrick, David Kilcrease, Harold Trease, Robert Walker. X3D Moving Grid Methods for Semiconductor Applications |
| 117 | -- | 121 | Daniel C. Kerr, Isaak D. Mayergoyz. A New Method to Recover Vectorial Electric Fields and Current Densities from Unstructured Meshes |
| 123 | -- | 128 | Aiichiro Nakano, Rajiv K. Kalia, Priya Vashishta. Multilevel Algorithms for Large-scope Molecular Dynamics Simulations of Nanostructures on Parallel Computers |
| 123 | -- | 126 | Mei-Kei Ieong, Ting-Wei Tang. Distributed Algorithms for Three-dimensional Semiconductor Device Simulations |
| 127 | -- | 130 | S. Babiker, Asen Asenov, John R. Barker, S. P. Beaumont. Quadrilateral Finite Element Monte Carlo Simulation of Complex Shape Compound FETs |
| 129 | -- | 133 | Ik-Sung Lim, Robert O. Grondin, Samir El-Ghazaly. Ensemble Monte Carlo and Full-Wave Electrodynamic Models Implemented Self-Consistently on a Parallel Processor Using Perfectly Matched Layer Boundary Conditions |
| 131 | -- | 135 | Zhi-An Shao, Wolfgang Porod, Craig S. Lent. 2D Finite Element Method Simulation of Lateral Resonant Tunneling Devices |
| 135 | -- | 141 | Carlo Cercignani, Irene M. Gamba, Joseph W. Jerome, Chi-Wang Shu. Applicability of the High Field Model: An Analytical Study Via Asymptotic Parameters Defining Domain Decomposition |
| 137 | -- | 140 | Sauro Succi, P. Vergari. A Lattice Boltzmann Scheme for Semiconductor Dynamics |
| 141 | -- | 145 | Zhiping Yu, Robert W. Dutton. Second Order Newton Iteration Method and Its Application to MOS Compact Modeling and Circuit Simulation |
| 143 | -- | 146 | Carl L. Gardner, Christian A. Ringhofer. Smooth Quantum Hydrodynamic Model Simulation of the Resonant Tunneling Diode |
| 147 | -- | 153 | Umberto Ravaioli, A. Duncan, A. Pacelli, Carl J. Wordelman, Karl Hess. Hierarchy of Full Band Structure Models for Monte Carlo Simulation |
| 147 | -- | 151 | Chip-Hong Chang, C. K. Lin, Neil Goldsman, Isaak D. Mayergoyz. Spherical Harmonic Modeling of a 0.05 μm Base BJT: A Comparison with Monte Carlo and Asymptotic Analysis |
| 153 | -- | 157 | Joseph W. Parks Jr., Kevin F. Brennan, Arlynn W. Smith. Numerical Examination of Photon Recycling as an Explanation of Observed Carrier Lifetime in Direct Bandgap Materials |
| 155 | -- | 160 | Marcello A. Anile, O. Muscato, Salvatore Rinaudo, P. Vergari. Testing Hydrodynamical Models on the Characteristics of a One-Dimensional Submicrometer Structure |
| 159 | -- | 163 | D. A. Richie, Paul von Allmen, K. Hess, Richard M. Martin. Electronic Structure Calculations Using An Adaptive Wavelet Basis |
| 161 | -- | 165 | Rossella Brunetti, Maria Cristina Vecchi, Massimo Rudan. Monte Carlo Analysis of Anisotropy in the Transport Relaxation Times for the Hydrodynamic Model |
| 165 | -- | 172 | D. K. Ferry, J. R. Barker. Open Problems in Quantum Simulation in Ultra-Submicron Devices |
| 167 | -- | 171 | Gabriele F. Formicone, Dragica Vasileska, David K. Ferry. 2D Monte Carlo Simulation of Hole and Electron Transport in Strained Si |
| 173 | -- | 176 | Deyin Xu, Ting-Wei Tang, Sergei S. Kucherenko. Time-Dependent Solution of a Full Hydrodynamic Model Including Convective Terms and Viscous Effect |
| 173 | -- | 178 | M. V. Fischetti. Theory of Electron Transport in Small Semiconductor Devices Using the Pauli Master Equation |
| 177 | -- | 180 | Arlynn W. Smith, Kevin F. Brennan. Comparison of Non-Parabolic Hydrodynamic Models Based On Different Band Structure Models |
| 179 | -- | 184 | I. V. Zozoulenko, K.-F. Berggren. Quantum Transport in Open Nanostructures |
| 181 | -- | 183 | J. Cai, H. L. Cui, E. H. Lenzing, R. Pastore, D. L. Rhodes, B. S. Perlman. Hydrodynamic Device Modeling with Band Nonparabolicity |
| 185 | -- | 190 | Carlo Jacoboni, A. Abramo, Paolo Bordone, Rossella Brunetti, M. Pascoli. Application of the Wigner-Function Formulation to Mesoscopic Systems in Presence of Electron-Phonon Interaction |
| 185 | -- | 189 | Alfredo J. Piazza, Can E. Korman. Computation of the Spectral Density of Current Fluctuations in Bulk Silicon Based on the Solution of the Boltzmann Transport Equation |
| 191 | -- | 196 | Günter Mahler, Rainer Wawer. Quantum Networks: Dynamics of Open Nanostructures |
| 191 | -- | 195 | Wenchao Liang, Daniel C. Kerr, Neil Goldsman, Isaak D. Mayergoyz. Hydrodynamic Device Simulation with New State Variables Specially Chosen for a Block Gummel Iterative Approach |
| 197 | -- | 202 | Fausto Rossi, Stefano Ragazzi, Aldo Di Carlo, Paolo Lugli. A Generalized Monte Carlo Approach for the Analysis of Quantum-Transport Phenomena in Mesoscopic Systems: Interplay Between Coherence and Relaxation |
| 197 | -- | 200 | N. A. Bannov, V. V. Mitin, F. T. Vasko. Modelling of Hot Acoustic Phonon Propagation in Two Dimensional Layers |
| 201 | -- | 204 | V. V. Mitin, N. A. Bannov, R. Mickevicius, G. Paulavicius. Numerical Simulation of Heat Removal from Low Dimensional Nanostructures |
| 203 | -- | 207 | Walter Pötz, Xuedong Hu. Coherent Control of Light Absorption and Carrier Dynamics in Semiconductor Nanostructures |
| 205 | -- | 208 | Hans Kosina, M. Harrer. A Hot-Hole Transport Model Based on Spherical Harmonics Expansion of the Anisotropic Bandstructure |
| 209 | -- | 212 | G. Kaiblinger-Grujin, Hans Kosina. An Improved Ionized Impurity Scattering Model for Monte Carlo Calculations |
| 209 | -- | 214 | Mathias Wagner. A New Computational Approach to Photon-Assisted Tunneling in Intense Driving Fields Based on a Fabry-Perot Analogy |
| 213 | -- | 216 | Mahbub Rashed, W.-K. Shih, S. Jallepalli, R. Zaman, Thomas J. T. Kwan, C. M. Maziar. A Monte Carlo study , of Electron Transport in Strained Si/SiGe Heterostructures |
| 215 | -- | 217 | H. L. Grubin, J. R. Caspar, D. K. Ferry. Phase Space Boundary Conditions and Quantum Device Transport |
| 217 | -- | 222 | Ming-C. Cheng. A New Concept for Solving the Boltzmann Transport Equation in Ultra-fast Transient Situations |
| 219 | -- | 223 | Christoph Wasshuber, Hans Kosina, Siegfried Selberherr. Single-Electron Memories |
| 223 | -- | 237 | Giorgio Baccarani, Massimo Rudan, M. Lorenzini, C. Sala. Recent Advances in Device Simulation Using Standard Transport Models |
| 225 | -- | 230 | T. Ezaki, N. Mori, C. Hamaguchi. Electron-LA Phonon Interaction in a Quantum Dot |
| 231 | -- | 235 | A. Scholze, Andreas Wettstein, Andreas Schenk, Wolfgang Fichtner. 2 Quantum Dot |
| 237 | -- | 245 | Fliex A. Buot. An lnterband Tunnel Oscillator: Intrinsic Bistability and Hysteresis of Trapped Hole Charge in a Double-Barrier Structure |
| 239 | -- | 242 | Maria Cristina Vecchi, Jan Mohring, Massimo Rudan. An Efficient Solution Scheme for the Spherical-Harmonics Expansion of the Boltzmann Transport Equation Applied to Two-Dimensional Devices |
| 243 | -- | 246 | Clinton R. Arokianathan, Asen Asenov, John H. Davies. A New Approach based on Brownian Motion for the Simulation of Ultra-Small Semiconductor Devices |
| 247 | -- | 250 | O. Muscato, Rosa M. Pidatella, Massimo V. Fischetti. + silicon diode |
| 247 | -- | 252 | M. Macucci, A. T. Galick, U. Ravaioli. Tunneling Between Multimode Stacked Quantum Wires |
| 251 | -- | 256 | Wenchao Liang, Neil Goldsman, Isaak D. Mayergoyz. A New Self-Consistent 2D Device Simulator Based on Deterministic Solution of the Boltzmann, Poisson and Hole-Continuity Equations |
| 253 | -- | 256 | F. Gámiz, Juan B. Roldán, J. A. López-Villanueva. x Heterostructures |
| 257 | -- | 260 | Surinder P. Singh, Neil Goldsman, Isaak D. Mayergoyz. Self-Consistent Solution of the Multi Band Boltzmann, Poisson and Hole-Continuity Equations |
| 257 | -- | 260 | F. Gámiz, J. B. Roldán, J. A. López-Villanueva. A β-SiC MOSFET Monte Carlo Simulator Including Inversion Layer Quantization |
| 261 | -- | 265 | Daniel C. Kerr, Neil Goldsman, Isaak D. Mayergoyz. Three-Dimensional Hydrodynamic Modeling of MOSFET Devices |
| 261 | -- | 264 | J. B. Roldán, F. Gámiz, J. A. López-Villanueva. Development of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETs |
| 265 | -- | 273 | Fliex Buot. Quantum Distribution-function Transport Equations in Non-normal Systems and in Ultra-fast Dynamics of Optically-excited Semiconductors |
| 267 | -- | 272 | Daniel C. Kerr, Isaak D. Mayergoyz. 3-D Device Simulation Using Intelligent Solution Method Control |
| 273 | -- | 276 | Subramaniam Pennathur, Can K. Sandalci, Çetin Kaya Koç, Stephen M. Goodnick. 3D Parallel Monte Carlo Simulation of GaAs MESFETs |
| 275 | -- | 282 | Carlo Cercignani, Irene M. Gamba, Joseph W. Jerome, Chi-Wang Shu. Applicability of the High Field Model: A Preliminary Numerical Study |
| 277 | -- | 282 | Gui-Qiang Chen, Joseph W. Jerome, Chi-Wang Shu. Analysis and Simulation of Extended Hydrodynamic Models: The Multi-Valley Gunn Oscillator and MESFET Symmetries |
| 283 | -- | 286 | Luigi Colalongo, Marina Valdinoci, Antonio Gnudi, Massimo Rudan. Transient Analysis of Silicon Devices Using the Hydrodynamic Model |
| 283 | -- | 287 | Gang Fang, Ting-Wei Tang. Simulation of Bistable Laser Diodes with lnhomogeneous Excitation |
| 287 | -- | 290 | J. B. Roldán, F. Gámiz, J. A. López-Villanueva, J. E. Carceller. Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization |
| 289 | -- | 293 | Jing P. Sun, Hsisheng B. Teng, George I. Haddad, Michael A. Stroscio, G. J. Iafrate. lntersubband Relaxation in Step Quantum Well Structures |
| 291 | -- | 297 | Duilio Meglio, Corrado Cianci, Aldo Di Carlo, Paolo Lugli. Non Local Impact Ionization Effects in Semiconductor Devices |
| 295 | -- | 299 | Yong S. Joe, Ronald M. Cosby. Resonances in Conductance Through Tunable Attractors |
| 299 | -- | 302 | Edwin C. Kan, Gyoyoung Jin, Zhiping Yu, Robert W. Dutton. Observation of Anomalous Negative Differential Resistance in Diode Breakdown Simulation Using Carrier Temperature Dependent Impact Ionization |
| 301 | -- | 305 | Dragica Vasileska, Warren J. Gross, Venceslav Kafedziski, David K. Ferry. Convergence Properties of the Bi-CGSTAB Method for the Solution of the 3D Poisson and 3D Electron Current Continuity Equations for Scaled Si MOSFETs |
| 303 | -- | 306 | P. Douglas Yoder, Ulrich Krumbein, Klaus Gärtner, N. Sasaki, Wolfgang Fichtner. Statistical Enhancement of Terminal Current Estimation for Monte Carlo Device Simulation |
| 307 | -- | 312 | Richard Akis, David K. Ferry. Wave Function Scarring Effects in Open Ballistic Quantum Cavities |
| 307 | -- | 311 | Jürgen Jakumeit, Umberto Ravaioli, Karl Hess. New Approach to Hot Electron Effects in Si-MOSFETs Based on an Evolutionary Algorithm Using a Monte Carlo Like Mutation Operator |
| 313 | -- | 317 | S. Babiker, Asen Asenov, N. Cameron, S. P. Beaumont, John R. Barker. Complete RF Analysis of Compound FETs Based on Transient Monte Carlo Simulation |
| 313 | -- | 319 | Anton Arnold. Numerically Absorbing Boundary Conditions for Quantum Evolution Equations |
| 319 | -- | 323 | Asen Asenov, S. Babiker, S. P. Beaumont, John R. Barker. Monte Carlo Calibrated Drift-Diffusion Simulation of Short Channel HFETs |
| 321 | -- | 329 | Eckehard Schöll. Modeling Nonlinear and Chaotic Dynamics in Semiconductor Device Structures |
| 325 | -- | 330 | Sumit Roy, Asen Asenov, S. Babiker, John R. Barker, S. P. Beaumont. RF Performance of Si/SiGe MODFETs: A Simulation Study |
| 331 | -- | 334 | D. K. Ferry, George Edwards. Studies of Chaotic Transport of Electrons in Quantum Boxes |
| 331 | -- | 335 | Clinton R. Arokianathan, J. H. Davies, Asen Asenov. Ab-initio Coulomb Scattering in Atomistic Device Simulation |
| 335 | -- | 339 | Minhan Chen, Wolfgang Porod. 2 |
| 337 | -- | 341 | Mahesh B. Patil, Umberto Ravaioli, Thomas Kerkhoven. Numerical Evaluation of Iterative Schemes for Drift-diffusion Simulation |
| 341 | -- | 344 | Konstantin K. Likharev, Alexander N. Korotkov. 0-Independent Single-Electron Systems |
| 343 | -- | 347 | Jürgen Jakumeit, Amanda Duncan, Umberto Ravaioli, Karl Hess. Simulation of Si-MOSFETs with the Mutation Operator Monte Carlo Method |
| 345 | -- | 349 | M. Macucci, K. Hess. Corrections to the Capacitance between Two Electrodes Due to the Presence of Quantum Confined System |
| 349 | -- | 353 | Lutfi Albasha, Christopher M. Snowden, Roger D. Pollard. A New HEMT Breakdown Model Incorporating Gate and Thermal Effects |
| 351 | -- | 353 | Leonard Franklin Register. Simulation of Optical Excitation to and Emission from Electron Fabry-Perot States Subject to Strong Inelastic Scattering |
| 355 | -- | 362 | Matt Grupen, Karl Hess. The Coupled Optoelectronic Problems of Quantum Well Laser Operation |
| 355 | -- | 360 | Stephen Bennett, Christopher M. Snowden, Stavros Iezekiel. Rate Equation Modelling of Nonlinear Dynamics in Directly Modulated Multiple Quantum Well Laser Diodes |
| 361 | -- | 365 | Susanna Reggiani, Maria Cristina Vecchi, Massimo Rudan. Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE |
| 363 | -- | 366 | D. Z.-Y. Ting, T. C. Mcgill. Modeling Light-Extraction Characteristics of Packaged Light-Emitting Diodes |
| 367 | -- | 371 | F. Oyafuso, Paul von Allmen, Matt Grupen, Karl Hess. Gain Calculation in a Quantum Well Laser Simulator Using an Eight Band k.p Model |
| 367 | -- | 373 | Robert W. Kelsall. Monte Carlo Simulations of Intersubband Hole Relaxation in a GaAs/AlAs Quantum Well |
| 373 | -- | 378 | Andrew P. Kuprat, Denise George, Eldon Linnebur, Harold Trease, R. Kent Smith. Moving Adaptive Unstructured 3-D Meshes in Semiconductor Process Modeling Applications |
| 375 | -- | 379 | A. Marrocco, Philippe Montarnal. Bi-Dimensional Simulation of the Simplified Hydrodynamic and Energy-Transport Models Heter junction Semiconductors Devices Using Mixed Finite Elements |
| 379 | -- | 384 | Ganesh Rajagopalan, Vadali Mahadev, Timothy S. Cale. Surface Evolution During Semiconductor Processing |
| 381 | -- | 385 | Alfredo J. Piazza, Can E. Korman. Semiconductor Device Noise Computation Based on the Deterministic Solution of the Poisson and Boltzmann Transport Equations |
| 385 | -- | 391 | Robert W. Dutton, Edwin C. Kan. Hierarchical Process Simulation for Nano-Electronics |
| 387 | -- | 391 | B. Neinhüs, S. Decker, P. Graf, F. M. Bufler, Bernd Meinerzhagen. Consistent Hydrodynamic and Monte-Carlo Simulation of SiGe HBTs Based on Table Models the Relaxation Times |
| 393 | -- | 399 | Elizabeth J. Brauer, Marek Turowski, James M. McDonough. Additive Decomposition Applied to the Semiconductor Drift-Diffusion Model |
| 393 | -- | 397 | Masami Kumagai, Kiyoyuki Yokoyama, Satoshi Tazawa. A Compound Semiconductor Process Simulator and its Application to Mask Dependent Undercut Etching |
| 399 | -- | 403 | Matthias K. Gobbert, Timothy S. Cale, Christian A. Ringhofer. The Combination of Equipment Scale and Feature Scale Models for Chemical Vapor Deposition Via a Homogenization Technique |
| 401 | -- | 405 | Manfred Dür, Stephen M. Goodnick, Martin Reigrotzki, Ronald Redmer. Monte Carlo Simulations of High Field Transport in Electroluminescent Devices |
| 405 | -- | 408 | Vamsee K. Pamula, R. Venkat. Beating in the RHEED Intensity Oscillations during Surfactant Mediated GaAs Molecular Beam Epitaxy: Process Physics and Modeling |
| 407 | -- | 412 | Kate A. Remley, Andreas Weisshaar, V. K. Tripathi, Stephen M. Goodnick. Modeling of Radiation Fields in a Sub-Picosecond Photo-Conducting System |
| 409 | -- | 412 | M. Meyyappan, T. R. Govindan. Plasma Process Modeling for Integrated Circuits Manufacturing |
| 413 | -- | 417 | John Stanley, Neil Goldsman. New "Irreducible Wedge" for Scattering Rate Calculations in Full-Zone Monte Carlo Simulations |
| 419 | -- | 422 | S. Ramey, R. Khoie. pin Solar Cells: Dark Behavior |
| 423 | -- | 428 | Haihong Wang, Wei-Kai Shih, Susan Green, Scott Hareland, Christine M. Maziar, A. F. Tasch Jr.. N-Channel MOSFET's with a Computationally Efficient Inversion Layer Quantization Model |
| 429 | -- | 435 | Wei-Kai Shih, Srinivas Jallepalli, Mahbub Rashed, Christine M. Maziar, A. F. Tasch Jr.. Study of Electron Velocity Overshoot in NMOS Inversion Layers |
| 437 | -- | 442 | T. Okada, K. Horio. Study on Possible Double Peaks in Cutoff Frequency Characteristics of AlGaAs/GaAs HBTs by Energy Transport Simulation |
| 443 | -- | 447 | Massimo Macucci, Karl Hess. Shell-Filling Effects in Circular Quantum Dots |
| 449 | -- | 453 | Giuseppe Iannaccone, Massimo Macucci, B. Pellegrini. Modeling of Shot Noise in Resonant Tunneling Structures |
| 454 | -- | 461 | Paul E. Hasler, Andreas G. Andreou, Chris Diorio, Bradley A. Minch, Carver A. Mead. Impact Ionization and Hot-Electron Injection Derived Consistently from Boltzmann Transport |
| 463 | -- | 468 | F. Oyafuso, Paul von Allmen, Matt Grupen, Karl Hess. Inclusion of Bandstructure and Many-Body Effects in a Quantum Well Laser Simulator |
| 469 | -- | 473 | Andrea Reale, Aldo Di Carlo, S. Pescetelli, Marco Paciotti, Paolo Lugli. Optical and Electronic Properties of Semiconductor 2D Nanosystems: Self-consistent Tight-binding Calculations |
| 475 | -- | 480 | Michael S. Obrecht, Edwin L. Heasell, J. Vlach, Mohamed I. Elmasry. Transient Phenomena in High Speed Bipolar Devices |
| 481 | -- | 487 | V. A. Kochelap, B. A. Glavin, V. V. Mitin. Transverse Patterns in the Bistable Resonant Tunneling Systems Under Ballistic Lateral Transport |
| 489 | -- | 493 | Hans Kosina, C. Troger. SPIN - A Schrödinger-Poisson Solver Including Nonparabolic Bands |
| 495 | -- | 500 | S. M. Sohel Imtiaz, Samir El-Ghazaly, Robert O. Grondin. Advantages of Semiconductor Device Simulator Combining Electromagnetic and Electron Transport Models |
| 501 | -- | 505 | Jen-Fin Lin, D. Z.-Y. Ting. Quantum Transport and Thermoelectric Properties of InAs/GaSb Superlattices |
| 507 | -- | 513 | G.-C. Chen, Y. A. Lin, D. Z.-Y. Ting, Y. C. Chang. Multiband Quantum Transmitting Boundary Method for Non-orthogonal Basis |
| 515 | -- | 520 | O. Muscato, S. Rinaudo, P. Falsaperla. Calibration of a One Dimensional Hydrodynamic Simulator with Monte Carlo Data |
| 521 | -- | 525 | Angelo Marcello Anile, Vittorio Romano, Giovanni Russo 0001. Hyperbolic Hydrodynamical Model of Carrier Transport in Semiconductors |
| 527 | -- | 532 | P. Falsaperla, M. Trovato. A Hydrodynamic Model for Transport in Semiconductors without Free Parameters |
| 533 | -- | 537 | Edwin C. Kan, Robert W. Dutton. Modeling of Poly-Silicon Carrier Transport with Explicit Treatment of Grains and Grain Boundaries |
| 539 | -- | 544 | Kausar Banoo, F. Assad, Mark S. Lundstrom. Formulation of the Boltzmann Equation as a Multi-Mode Drift-Diffusion Equation |
| 545 | -- | 548 | Gyula Veszely. A 3D Nonlinear Poisson Solver |
| 549 | -- | 553 | Paul G. Krause, Rachel M. Mueller, P. Douglas Tougaw, Janelle M. Weidner. An Alternative Geometry for Quantum Cellular Automata |
| 555 | -- | 558 | Per Hyldgaard, Henry K. Harbury, Wolfgang Porod. 2 Quantum Dot Systems |
| 559 | -- | 565 | Zhen-Li Ji, D. W. L. Sprung. Electron Transport In One-Dimensional Magnetic Superlattices |
| 567 | -- | 572 | Joseph W. Parks Jr., Kevin F. Brennan. Boundary Condition for the Modeling of Open-circuited Devices in Non-equilibrium |