2349 | -- | 2354 | Maria Glória Caño de Andrade, João Antonio Martino, Marc Aoulaiche, Nadine Collaert, Eddy Simoen, Cor Claeys. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation |
2355 | -- | 2359 | Cher Xuan Zhang, En-xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Chris Rutherglen, Kosmas Galatsis. Total-ionizing-dose effects and reliability of carbon nanotube FET devices |
2360 | -- | 2363 | V. S. Pershenkov, M. Ullán, M. Wilder, H. Spieler, E. Spencer, S. Rescia, F. M. Newcomer, F. Martinez-McKinney, W. Kononenko, A. A. Grillo, S. Díez. Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses |
2364 | -- | 2370 | Vinicius V. A. Camargo, Ben Kaczer, Tibor Grasser, Gilson I. Wirth. Circuit simulation of workload-dependent RTN and BTI based on trap kinetics |
2371 | -- | 2377 | Pong-Fei Lu, Keith A. Jenkins, Tobias Webel, Oliver Marquardt, Birgit Schubert. Long-term NBTI degradation under real-use conditions in IBM microprocessors |
2378 | -- | 2382 | Miao Liao, Zhenghao Gan. New insight on negative bias temperature instability degradation with drain bias of 28 nm High-K Metal Gate p-MOSFET devices |
2383 | -- | 2387 | Cheolgyu Kim, Hyeokjin Kim, Bongkoo Kang. 2 nMOSFETs under positive bias temperature instability |
2388 | -- | 2391 | X. D. Huang, R. P. Shi, C. H. Leung, P. T. Lai. 3 with and without nitridation for nonvolatile memory applications |
2392 | -- | 2395 | Meng Chuan Lee, Hin Yong Wong, Lini Lee. Threshold voltage instability of nanoscale charge trapping non-volatile memory at steady phase |
2396 | -- | 2400 | L. X. Qian, P. T. Lai. A study on the electrical characteristics of InGaZnO thin-film transistor with HfLaO gate dielectric annealed in different gases |
2401 | -- | 2405 | Xingwei Ding, Jianhua Zhang, Hao Zhang, He Ding, Chuanxin Huang, Jun Li, Weimin Shi, Xueyin Jiang, Zhilin Zhang. 3 film to enhance the performance of InGaZnO thin-film transistor |
2406 | -- | 2409 | Weizong Xu, Lihua Fu, Hai Lu, Dunjun Chen, Fangfang Ren, Rong Zhang, Youdou Zheng, Ke Wei, Xinyu Liu. Off-state breakdown and leakage current transport analysis of AlGaN/GaN high electron mobility transistors |
2410 | -- | 2416 | K. T. Kaschani, R. Gärtner. Electrical Overstress of Integrated Circuits |
2417 | -- | 2422 | Choon-W. Nahm. 1.83-based semiconducting varistors for surge protection reliability |
2423 | -- | 2431 | Vinoth K. Sundaramoorthy, E. Bianda, R. Bloch, Daniele Angelosante, I. Nistor, G. J. Riedel, F. Zurfluh, G. Knapp, A. Heinemann. A study on IGBT junction temperature (Tj) online estimation using gate-emitter voltage (Vge) at turn-off |
2432 | -- | 2439 | Donatien Martineau, Colette Levade, Marc Legros, Philippe Dupuy, Thomas Mazeaud. Universal mechanisms of Al metallization ageing in power MOSFET devices |
2440 | -- | 2447 | M. Yazdan Mehr, Willem D. van Driel, S. Koh, Guoqi Zhang. Reliability and optical properties of LED lens plates under high temperature stress |
2448 | -- | 2455 | Huaiyu Ye, Bo Li, Hongyu Tang, Jia Zhao, Cadmus A. Yuan, Guoqi Zhang. Design of vertical fin arrays with heat pipes used for high-power light-emitting diodes |
2456 | -- | 2462 | Kim Trapani, Steve Martens, Krishna Challagulla, Salina Yong, Dean Millar, Sean Maloney. Water absorption characterisation, electrical reliability and mechanical testing of a submerged laminated a-Si thin film photovoltaic (PV) cells |
2463 | -- | 2470 | Kiyoshi Mizuuchi, Kanryu Inoue, Yasuyuki Agari, Masami Sugioka, Motohiro Tanaka, Takashi Takeuchi, Junichi Tani, Masakazu Kawahara, Yukio Makino, Mikio Ito. Bimodal and monomodal diamond particle effect on the thermal properties of diamond-particle-dispersed Al-matrix composite fabricated by SPS |
2471 | -- | 2478 | Chin-Li Kao, Tei-Chen Chen, Yi-Shao Lai, Ying-Ta Chiu. Investigation of electromigration reliability of redistribution lines in wafer-level chip-scale packages |
2479 | -- | 2486 | Wei Zhang, Junhui Li, Lei Han. Study of a dipping method for flip-chip flux coating |
2487 | -- | 2493 | Michael Fugger, Mathias Plappert, Carsten Schäffer, Oliver Humbel, Herbert Hutter, Herbert Danninger, Mathias Nowottnick. Comparison of WTi and WTi(N) as diffusion barriers for Al and Cu metallization on Si with respect to thermal stability and diffusion behavior of Ti |
2494 | -- | 2500 | Lei Qiang, Zaixing Huang. A physical model and analysis for whisker growth caused by chemical intermetallic reaction |
2501 | -- | 2512 | Stefano Mazzei, Mauro Madia, Stefano Beretta, Alberto Mancaleoni, Sebastiano Aparo. Analysis of Cu-wire pull and shear test failure modes under ageing cycles and finite element modelling of Si-crack propagation |
2513 | -- | 2522 | Jonathon P. Tucker, Dennis K. Chan, Ganesh Subbarayan, Carol A. Handwerker. Maximum entropy fracture model and its use for predicting cyclic hysteresis in Sn3.8Ag0.7Cu and Sn3.0Ag0.5 solder alloys |
2523 | -- | 2535 | Jonas Johansson, Ilja Belov, Erland Johnson, Rainer Dudek, Peter Leisner. Investigation on thermal fatigue of SnAgCu, Sn100C, and SnPbAg solder joints in varying temperature environments |
2536 | -- | 2541 | Karen M. C. Wong, Yee Kai Tian. Effect of trace platinum additions on the interfacial morphology of Sn-3.8Ag-0.7Cu alloy aged for long hours |
2542 | -- | 2549 | Francisco Molina-Lopez, R. E. de Araújo, M. Jarrier, Jérôme Courbat, Danick Briand, Nico F. de Rooij. Study of bending reliability and electrical properties of platinum lines on flexible polyimide substrates |
2550 | -- | 2554 | Rui Guo, Liming Gao, Dali Mao, Ming Li, Xu Wang, Zhong Lv, Hope Chiu. Study of free air ball formation in Ag-8Au-3Pd alloy wire bonding |
2555 | -- | 2563 | Adeline B. Y. Lim, Andrew C. K. Chang, Oranna Yauw, Bob Chylak, Chee Lip Gan, Zhong Chen. Ultra-fine pitch palladium-coated copper wire bonding: Effect of bonding parameters |
2564 | -- | 2569 | Hao-Wen Hsueh, Fei-Yi Hung, Truan-Sheng Lui, Li-Hui Chen, Jun-Kai Chang. Microstructure, electric flame-off (EFO) characteristics and tensile properties of silver-lanthanum alloy wire |
2570 | -- | 2577 | Manoj Kumar Majumder, Pankaj Kumar Das, Brajesh Kumar Kaushik. Delay and crosstalk reliability issues in mixed MWCNT bundle interconnects |
2578 | -- | 2585 | Pierre Eckold, Rainer Niewa, Werner Hügel. Texture of electrodeposited tin layers and its influence on their corrosion behavior |
2586 | -- | 2593 | James Marro, Chukwudi Okoro, Yaw Obeng, Kathleen Richardson. Defect and microstructural evolution in thermally cycled Cu through-silicon vias |
2594 | -- | 2603 | E. Suhir. Three-step concept (TSC) in modeling microelectronics reliability (MR): Boltzmann-Arrhenius-Zhurkov (BAZ) probabilistic physics-of-failure equation sandwiched between two statistical models |
2604 | -- | 2612 | Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi. Robust FinFET SRAM design based on dynamic back-gate voltage adjustment |
2613 | -- | 2620 | Bartomeu Alorda, Gabriel Torrens, Sebastiàn A. Bota, Jaume Segura. Adaptive static and dynamic noise margin improvement in minimum-sized 6T-SRAM cells |
2621 | -- | 2628 | Davide Sabena, Matteo Sonza Reorda, Luca Sterpone, Paolo Rech, Luigi Carro. Evaluating the radiation sensitivity of GPGPU caches: New algorithms and experimental results |
2629 | -- | 2640 | Jiajia Jiao, Yuzhuo Fu, Shi-Jie Wen. Accelerated assessment of fine-grain AVF in NoC using a Multi-Cell Upsets considered fault injection |
2641 | -- | 2644 | Damian Nowak, Andrzej Dziedzic. Fabrication and advanced electrical and stability characterization of laser-shaped thick-film and LTCC microresistors for high temperature applications |
2645 | -- | 2648 | Mustafa Demirci, Pedro Reviriego, Juan Antonio Maestro. Optimized parallel decoding of difference set codes for high speed memories |