Journal: Microelectronics Reliability

Volume 54, Issue 11

2349 -- 2354Maria Glória Caño de Andrade, João Antonio Martino, Marc Aoulaiche, Nadine Collaert, Eddy Simoen, Cor Claeys. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
2355 -- 2359Cher Xuan Zhang, En-xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Chris Rutherglen, Kosmas Galatsis. Total-ionizing-dose effects and reliability of carbon nanotube FET devices
2360 -- 2363V. S. Pershenkov, M. Ullán, M. Wilder, H. Spieler, E. Spencer, S. Rescia, F. M. Newcomer, F. Martinez-McKinney, W. Kononenko, A. A. Grillo, S. Díez. Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses
2364 -- 2370Vinicius V. A. Camargo, Ben Kaczer, Tibor Grasser, Gilson I. Wirth. Circuit simulation of workload-dependent RTN and BTI based on trap kinetics
2371 -- 2377Pong-Fei Lu, Keith A. Jenkins, Tobias Webel, Oliver Marquardt, Birgit Schubert. Long-term NBTI degradation under real-use conditions in IBM microprocessors
2378 -- 2382Miao Liao, Zhenghao Gan. New insight on negative bias temperature instability degradation with drain bias of 28 nm High-K Metal Gate p-MOSFET devices
2383 -- 2387Cheolgyu Kim, Hyeokjin Kim, Bongkoo Kang. 2 nMOSFETs under positive bias temperature instability
2388 -- 2391X. D. Huang, R. P. Shi, C. H. Leung, P. T. Lai. 3 with and without nitridation for nonvolatile memory applications
2392 -- 2395Meng Chuan Lee, Hin Yong Wong, Lini Lee. Threshold voltage instability of nanoscale charge trapping non-volatile memory at steady phase
2396 -- 2400L. X. Qian, P. T. Lai. A study on the electrical characteristics of InGaZnO thin-film transistor with HfLaO gate dielectric annealed in different gases
2401 -- 2405Xingwei Ding, Jianhua Zhang, Hao Zhang, He Ding, Chuanxin Huang, Jun Li, Weimin Shi, Xueyin Jiang, Zhilin Zhang. 3 film to enhance the performance of InGaZnO thin-film transistor
2406 -- 2409Weizong Xu, Lihua Fu, Hai Lu, Dunjun Chen, Fangfang Ren, Rong Zhang, Youdou Zheng, Ke Wei, Xinyu Liu. Off-state breakdown and leakage current transport analysis of AlGaN/GaN high electron mobility transistors
2410 -- 2416K. T. Kaschani, R. Gärtner. Electrical Overstress of Integrated Circuits
2417 -- 2422Choon-W. Nahm. 1.83-based semiconducting varistors for surge protection reliability
2423 -- 2431Vinoth K. Sundaramoorthy, E. Bianda, R. Bloch, Daniele Angelosante, I. Nistor, G. J. Riedel, F. Zurfluh, G. Knapp, A. Heinemann. A study on IGBT junction temperature (Tj) online estimation using gate-emitter voltage (Vge) at turn-off
2432 -- 2439Donatien Martineau, Colette Levade, Marc Legros, Philippe Dupuy, Thomas Mazeaud. Universal mechanisms of Al metallization ageing in power MOSFET devices
2440 -- 2447M. Yazdan Mehr, Willem D. van Driel, S. Koh, Guoqi Zhang. Reliability and optical properties of LED lens plates under high temperature stress
2448 -- 2455Huaiyu Ye, Bo Li, Hongyu Tang, Jia Zhao, Cadmus A. Yuan, Guoqi Zhang. Design of vertical fin arrays with heat pipes used for high-power light-emitting diodes
2456 -- 2462Kim Trapani, Steve Martens, Krishna Challagulla, Salina Yong, Dean Millar, Sean Maloney. Water absorption characterisation, electrical reliability and mechanical testing of a submerged laminated a-Si thin film photovoltaic (PV) cells
2463 -- 2470Kiyoshi Mizuuchi, Kanryu Inoue, Yasuyuki Agari, Masami Sugioka, Motohiro Tanaka, Takashi Takeuchi, Junichi Tani, Masakazu Kawahara, Yukio Makino, Mikio Ito. Bimodal and monomodal diamond particle effect on the thermal properties of diamond-particle-dispersed Al-matrix composite fabricated by SPS
2471 -- 2478Chin-Li Kao, Tei-Chen Chen, Yi-Shao Lai, Ying-Ta Chiu. Investigation of electromigration reliability of redistribution lines in wafer-level chip-scale packages
2479 -- 2486Wei Zhang, Junhui Li, Lei Han. Study of a dipping method for flip-chip flux coating
2487 -- 2493Michael Fugger, Mathias Plappert, Carsten Schäffer, Oliver Humbel, Herbert Hutter, Herbert Danninger, Mathias Nowottnick. Comparison of WTi and WTi(N) as diffusion barriers for Al and Cu metallization on Si with respect to thermal stability and diffusion behavior of Ti
2494 -- 2500Lei Qiang, Zaixing Huang. A physical model and analysis for whisker growth caused by chemical intermetallic reaction
2501 -- 2512Stefano Mazzei, Mauro Madia, Stefano Beretta, Alberto Mancaleoni, Sebastiano Aparo. Analysis of Cu-wire pull and shear test failure modes under ageing cycles and finite element modelling of Si-crack propagation
2513 -- 2522Jonathon P. Tucker, Dennis K. Chan, Ganesh Subbarayan, Carol A. Handwerker. Maximum entropy fracture model and its use for predicting cyclic hysteresis in Sn3.8Ag0.7Cu and Sn3.0Ag0.5 solder alloys
2523 -- 2535Jonas Johansson, Ilja Belov, Erland Johnson, Rainer Dudek, Peter Leisner. Investigation on thermal fatigue of SnAgCu, Sn100C, and SnPbAg solder joints in varying temperature environments
2536 -- 2541Karen M. C. Wong, Yee Kai Tian. Effect of trace platinum additions on the interfacial morphology of Sn-3.8Ag-0.7Cu alloy aged for long hours
2542 -- 2549Francisco Molina-Lopez, R. E. de Araújo, M. Jarrier, Jérôme Courbat, Danick Briand, Nico F. de Rooij. Study of bending reliability and electrical properties of platinum lines on flexible polyimide substrates
2550 -- 2554Rui Guo, Liming Gao, Dali Mao, Ming Li, Xu Wang, Zhong Lv, Hope Chiu. Study of free air ball formation in Ag-8Au-3Pd alloy wire bonding
2555 -- 2563Adeline B. Y. Lim, Andrew C. K. Chang, Oranna Yauw, Bob Chylak, Chee Lip Gan, Zhong Chen. Ultra-fine pitch palladium-coated copper wire bonding: Effect of bonding parameters
2564 -- 2569Hao-Wen Hsueh, Fei-Yi Hung, Truan-Sheng Lui, Li-Hui Chen, Jun-Kai Chang. Microstructure, electric flame-off (EFO) characteristics and tensile properties of silver-lanthanum alloy wire
2570 -- 2577Manoj Kumar Majumder, Pankaj Kumar Das, Brajesh Kumar Kaushik. Delay and crosstalk reliability issues in mixed MWCNT bundle interconnects
2578 -- 2585Pierre Eckold, Rainer Niewa, Werner Hügel. Texture of electrodeposited tin layers and its influence on their corrosion behavior
2586 -- 2593James Marro, Chukwudi Okoro, Yaw Obeng, Kathleen Richardson. Defect and microstructural evolution in thermally cycled Cu through-silicon vias
2594 -- 2603E. Suhir. Three-step concept (TSC) in modeling microelectronics reliability (MR): Boltzmann-Arrhenius-Zhurkov (BAZ) probabilistic physics-of-failure equation sandwiched between two statistical models
2604 -- 2612Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi. Robust FinFET SRAM design based on dynamic back-gate voltage adjustment
2613 -- 2620Bartomeu Alorda, Gabriel Torrens, Sebastiàn A. Bota, Jaume Segura. Adaptive static and dynamic noise margin improvement in minimum-sized 6T-SRAM cells
2621 -- 2628Davide Sabena, Matteo Sonza Reorda, Luca Sterpone, Paolo Rech, Luigi Carro. Evaluating the radiation sensitivity of GPGPU caches: New algorithms and experimental results
2629 -- 2640Jiajia Jiao, Yuzhuo Fu, Shi-Jie Wen. Accelerated assessment of fine-grain AVF in NoC using a Multi-Cell Upsets considered fault injection
2641 -- 2644Damian Nowak, Andrzej Dziedzic. Fabrication and advanced electrical and stability characterization of laser-shaped thick-film and LTCC microresistors for high temperature applications
2645 -- 2648Mustafa Demirci, Pedro Reviriego, Juan Antonio Maestro. Optimized parallel decoding of difference set codes for high speed memories