| 1637 | -- | 0 | Christian Boit. Editorial |
| 1638 | -- | 1642 | Nicola Wrachien, Andrea Cester, N. Lago, Gaudenzio Meneghesso, Riccardo D'Alpaos, Andrea Stefani, Guido Turatti, Michele Muccini. Stress-induced degradation of p- and n-type organic thin-film-transistors in the ON and OFF states |
| 1643 | -- | 1647 | Indranil Bose, Kornelius Tetzner, Kathrin Borner, Karlheinz Bock. Air-stable, high current density, solution-processable, amorphous organic rectifying diodes (ORDs) for low-cost fabrication of flexible passive low frequency RFID tags |
| 1648 | -- | 1654 | Werner Kanert. Robustness Validation - A physics of failure based approach to qualification |
| 1655 | -- | 1660 | Nicolae Cristian Sintamarean, Huai Wang, Frede Blaabjerg, Peter de Place Rimmen. A design tool to study the impact of mission-profile on the reliability of SiC-based PV-inverter devices |
| 1661 | -- | 1665 | A. Mavinkurve, Leon Goumans, G. M. O'Halloran, R. T. H. Rongen, M.-L. Farrugia. Copper wire interconnect reliability evaluation using in-situ High Temperature Storage Life (HTSL) tests |
| 1666 | -- | 1670 | Wee Loon Ng, Kheng Chok Tee, Junfeng Liu, Yong Chiang Ee, Oliver Aubel, Chuan Seng Tan, Kin Leong Pey. Robust Electromigration reliability through engineering optimization |
| 1671 | -- | 1674 | Oliver Aubel, Armand Beyer, Georg Talut, Martin Gall. Empirical BEOL-TDDB evaluation based on I(t)-trace analysis |
| 1675 | -- | 1679 | B. J. Tang, Kris Croes, Y. Barbarin, Y. Q. Wang, Robin Degraeve, Y. Li, M. Toledano-Luque, T. Kauerauf, J. Bömmels, Zsolt Tokei, Ingrid De Wolf. As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability |
| 1680 | -- | 1685 | David Squiller, Hannes Greve, Elena Mengotti, F. P. McCluskey. Physics-of-failure assessment methodology for power electronic systems |
| 1686 | -- | 1691 | Matthias Steiert, Jürgen Wilde. Influence of dicing damages on the thermo-mechanical reliability of bare-chip assemblies |
| 1692 | -- | 1696 | Giulio Marti, Lucile Arnaud, Yves Wouters. Study of EM void nucleation and mechanic relaxation effects |
| 1697 | -- | 1701 | Lifang Liu, Antonio Arreghini, Geert Van den bosch, Liyang Pan, Jan Van Houdt. Assessment methodology of the lateral migration component in data retention of 3D SONOS memories |
| 1702 | -- | 1706 | Boukary Ouattara, Lise Doyen, David Ney, Habib Mehrez, Pirouz Bazargan-Sabet. Power grid redundant path contribution in system on chip (SoC) robustness against electromigration |
| 1707 | -- | 1711 | J. Blasco, Helena Castán, Héctor García, Salvador Dueñas, J. Suñé, Marianna Kemell, Kaupo Kukli, Mikko Ritala, Markku Leskelä, E. Miranda. x-based MIM capacitors |
| 1712 | -- | 1717 | Kalya Shubhakar, Nagarajan Raghavan, Sunil Singh Kushvaha, Michel Bosman, Zhongrui Wang, Sean J. O'Shea, Kin Leong Pey. x interfacial layer |
| 1718 | -- | 1723 | Thomas Santini, Sébastien Morand, Mitra Fouladirad, Luong-Viêt Phung, Florent Miller, Bruno Foucher, Antoine Grall, Bruno Allard. Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessment |
| 1724 | -- | 1728 | Jörg Kludt, Kirsten Weide-Zaage, Markus Ackermann, Verena Hein, Christian Kovács. Degradation behavior in upstream/downstream via test structures |
| 1729 | -- | 1734 | Nagarajan Raghavan, Daniel D. Frey, Kin Leong Pey. Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory |
| 1735 | -- | 1740 | M. Fuegl, G. Mackh, E. Meissner, L. Frey. Analytical stress characterization after different chip separation methods |
| 1741 | -- | 1744 | Andreas Rückerl, Sophia Huppmann, Roland Zeisel, Simeon Katz. Monolithic integrable capacitive humidity sensing method for material characterization of dielectric thin films |
| 1745 | -- | 1748 | Aleksandr S. Petrov, Konstantin I. Tapero, Viktor N. Ulimov. Influence of temperature and dose rate on the degradation of BiCMOS operational amplifiers during total ionizing dose testing |
| 1749 | -- | 1752 | Louis Gerrer, Salvatore M. Amoroso, Razaidi Hussin, Asen Asenov. RTN distribution comparison for bulk, FDSOI and FinFETs devices |
| 1753 | -- | 1757 | N. Duan, T. Bach, J. Shen, R. Rongen. Comparison of in-situ measurement techniques of solder joint reliability under thermo-mechanical stresses |
| 1758 | -- | 1763 | Michael Elßner. Vacuum quality evaluation for uncooled micro bolometer thermal imager sensors |
| 1764 | -- | 1769 | Julien Magnien, Golta Khatibi. Assessment of mechanical reliability of surface mounted capacitor by an accelerated shear fatigue test technique |
| 1770 | -- | 1773 | Thierry Kociniewski, Jeff Moussodji, Zoubir Khatir. μ-Raman spectroscopy for stress analysis in high power silicon devices |
| 1774 | -- | 1778 | You Wang, Yue Zhang, Erya Deng, Jacques-Olivier Klein, Lirida A. B. Naviner, Weisheng Zhao. Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses |
| 1779 | -- | 1784 | Huimeng Wu, David Ferranti, Lewis Stern. Precise nanofabrication with multiple ion beams for advanced circuit edit |
| 1785 | -- | 1789 | Michél Simon-Najasek, Susanne Hübner, Frank Altmann, Andreas Graff. Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures |
| 1790 | -- | 1793 | Christian Lang, Matthew Hiscock, Michael Dawson, Cheryl Hartfield. Local thickness and composition analysis of TEM lamellae in the FIB |
| 1794 | -- | 1797 | Philipp Scholz, Norbert Herfurth, Michael Sadowski, Ted Lundquist, Uwe Kerst, Christian Boit. Efficient and flexible Focused Ion Beam micromachining of Solid Immersion Lenses in various bulk semiconductor materials - An adaptive calibration algorithm |
| 1798 | -- | 1801 | Clemens Helfmeier, Rudolf Schlangen, Christian Boit. Focused ion beam contact to non-volatile memory cells |
| 1802 | -- | 1805 | Lionel Dantas de Morais, Sophie Chevalliez, Stephanie Mouleres. Low temperature FIB cross section: Application to indium micro bumps |
| 1806 | -- | 1812 | M. Thoben, F. Sauerland, K. Mainka, S. Edenharter, L. Beaurenaut. Lifetime modeling and simulation of power modules for hybrid electrical/electrical vehicles |
| 1813 | -- | 1817 | R. German, Ali Sari, Pascal Venet, M. Ayadi, Olivier Briat, Jean-Michel Vinassa. Prediction of supercapacitors floating ageing with surface electrode interface based ageing law |
| 1818 | -- | 1822 | F. P. McCluskey, N. M. Li, Elena Mengotti. Eliminating infant mortality in metallized film capacitors by defect detection |
| 1823 | -- | 1827 | Maawad Makdessi, Ali Sari, Pascal Venet. Metallized polymer film capacitors ageing law based on capacitance degradation |
| 1828 | -- | 1832 | Michele Riccio, L. Maresca, Andrea Irace, Giovanni Breglio, Yohei Iwahashi. Impact of gate drive voltage on avalanche robustness of trench IGBTs |
| 1833 | -- | 1838 | G. De Falco, Michele Riccio, Giovanni Breglio, Andrea Irace. Thermal-aware design and fault analysis of a DC/DC parallel resonant converter |
| 1839 | -- | 1844 | Xavier Perpiñà, Xavier Jordà, Javier Leon, Miquel Vellvehí, Daniel Antón, Sergio Llorente. Comparison of temperature limits for Trench silicon IGBT technologies for medium power applications |
| 1845 | -- | 1850 | Michele Riccio, Vincenzo d'Alessandro, Andrea Irace, Gilles Rostaing, Mounira Berkani, Stéphane Lefebvre, Philippe Dupuy. 3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions |
| 1851 | -- | 1855 | M. A. Belaïd, M. Gares, K. Daoud, Olivier Latry. Performance drifts of N-MOSFETs under pulsed RF life test |
| 1856 | -- | 1861 | Franc Dugal, Mauro Ciappa. Study of thermal cycling and temperature aging on PbSnAg die attach solder joints for high power modules |
| 1862 | -- | 1866 | Saskia Huber, Marius van Dijk, Hans Walter, Olaf Wittler, Tina Thomas, Klaus-Dieter Lang. Improving the FE simulation of molded packages using warpage measurements |
| 1867 | -- | 1871 | T. Ishizaki, A. Kuno, A. Tane, M. Yanase, F. Osawa, T. Satoh, Y. Yamada. Reliability of Cu nanoparticle joint for high temperature power electronics |
| 1872 | -- | 1876 | R. Randoll, W. Wondrak, A. Schletz. Dielectric strength and thermal performance of PCB-embedded power electronics |
| 1877 | -- | 1882 | David Gross, Sabine Haag, Martin Schneider-Ramelow, Klaus-Dieter Lang. The influence of liners with Ti, Ta or Ru finish on thin Cu films |
| 1883 | -- | 1886 | C. Olk, Stefano Aresu, R. Rudolf, M. Röhner, Wolfgang Gustin, E. Stein Von Kamienski. HCS degradation of 5 nm oxide high-voltage PLDMOS |
| 1887 | -- | 1890 | Corinne Bergès, Pierre Soufflet, Abdeslam Jadrani. Risk and reliability assessment about a manufacturing issue in a power MOSFET for automotive applications |
| 1891 | -- | 1896 | Junpei Takaishi, Syohei Harada, Masanori Tsukuda, Ichiro Omura. Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part II |
| 1897 | -- | 1900 | Kazunori Hasegawa, Kenichi Yamamoto, Hidetaro Yoshida, Kota Hamada, Masanori Tsukuda, Ichiro Omura. Short-circuit protection for an IGBT with detecting the gate voltage and gate charge |
| 1901 | -- | 1905 | Peter Dietrich. Joining and package technology for 175 °C Tj increasing reliability in automotive applications |
| 1906 | -- | 1910 | Ihsan Supono, Jesús Urresti, Alberto Castellazzi, David Flores. Overload robust IGBT design for SSCB application |
| 1911 | -- | 1915 | Yangang Wang, Steve Jones, A. Dai, Guoyou Liu. Reliability enhancement by integrated liquid cooling in power IGBT modules for hybrid and electric vehicles |
| 1916 | -- | 1920 | F. Giuliani, D. Dipankar, Nicola Delmonte, Alberto Castellazzi, Paolo Cova. Robust snubberless soft-switching power converter using SiC power MOSFETs and bespoke thermal design |
| 1921 | -- | 1926 | Son-Ha Tran, L. Dupont, Zoubir Khatir. Solder void position and size effects on electro thermal behaviour of MOSFET transistors in forward bias conditions |
| 1927 | -- | 1934 | Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto, Annunziata Sanseverino, Francesco Velardi, Cesare Ronsisvalle, James Victory. Turn-off instabilities in large area IGBTs |
| 1935 | -- | 1939 | Markus Andresen, Marco Liserre. Impact of active thermal management on power electronics design |
| 1940 | -- | 1943 | YanDong He, Ganggang Zhang, Xing Zhang. NBTI degradation in STI-based LDMOSFETs |
| 1944 | -- | 1948 | M. Ayadi, Olivier Briat, R. Lallemand, A. Eddahech, R. German, Gerard Coquery, Jean-Michel Vinassa. Description of supercapacitor performance degradation rate during thermal cycling under constant voltage ageing test |
| 1949 | -- | 1952 | Yunlong Li, Stefaan Van Huylenbroeck, Els Van Besien, Xiaoping Shi, Chen Wu, Michele Stucchi, Gerald Beyer, Eric Beyne, Ingrid De Wolf, Kristof Croes. Reliability challenges for barrier/liner system in high aspect ratio through silicon vias |
| 1953 | -- | 1958 | Lado Filipovic, Siegfried Selberherr. The effects of etching and deposition on the performance and stress evolution of open through silicon vias |
| 1959 | -- | 1962 | Christoph Sander, Yvonne Standke, Sven Niese, Rüdiger Rosenkranz, André Clausner, Martin Gall, Ehrenfried Zschech. Advanced methods for mechanical and structural characterization of nanoscale materials for 3D IC integration |
| 1963 | -- | 1968 | Dietmar Vogel, Ellen Auerswald, Jürgen Auersperg, Parisa Bayat, Raul D. Rodriguez, Dietrich R. T. Zahn, Sven Rzepka, Bernd Michel. Stress analyses of high spatial resolution on TSV and BEoL structures |
| 1969 | -- | 1971 | Jörg Dreybrodt, Yves Dupraz. Study of the UBM to copper interface robustness of solder bumps in flip chip packages |
| 1972 | -- | 1976 | A. El Amrani, A. Benali, M. Bouya, M. Faqir, K. Demir, A. Hadjoudja, M. Ghogho. A study of through package vias in a glass interposer for multifunctional and miniaturized systems |
| 1977 | -- | 1981 | Verena Hein, Jörg Kludt, Kirsten Weide-Zaage. Evaluation new corner stress relief structure layout for high robust metallization |
| 1982 | -- | 1987 | George Vakanas, Björn Vandecasteele, David Schaubroek, Joke De Messemaeker, Geert Willems, Mark Ashworth, Geoffrey D. Wilcox, Ingrid De Wolf. Sn whisker evaluations in 3D microbumped structures |
| 1988 | -- | 1994 | R. T. H. Rongen, R. Roucou, P. J. vd Wel, F. C. Voogt, F. Swartjes, Kirsten Weide-Zaage. Reliability of Wafer Level Chip Scale Packages |
| 1995 | -- | 1999 | Jörg C. Krinke, Dragica Dragicevic, Susann Leinert, Erik Frieß, Joachim Glück. High temperature degradation of palladium coated copper bond wires |
| 2000 | -- | 2005 | Benjamin März, Andreas Graff, Robert Klengel, Matthias Petzold. Interface microstructure effects in Au thermosonic ball bonding contacts by high reliability wire materials |
| 2006 | -- | 2012 | Elaheh Arjmand, Pearl A. Agyakwa, C. Mark Johnson. Reliability of thick Al wire: A study of the effects of wire bonding parameters on thermal cycling degradation rate using non-destructive methods |
| 2013 | -- | 2016 | Hélène Frémont, Jörg Kludt, Massar Wade, Kirsten Weide-Zaage, Isabelle Bord-Majek, Geneviève Duchamp. Qualification procedure for moisture in embedded capacitors |
| 2017 | -- | 2022 | Sanna Lahokallio, Janne Kiilunen, Laura Frisk. High temperature reliability of electrically conductive adhesive attached temperature sensors on flexible polyimide substrates |
| 2023 | -- | 2027 | Harald Preu, Jochen Feilmeier, Markus Lang, Norbert Soellner, Jürgen Walter, Walter Mack. A study on electrochemical effects in external capacitor packages |
| 2028 | -- | 2033 | Yang Liu, Stanley Y. Y. Leung, Jia Zhao, Cell K. Y. Wong, Cadmus A. Yuan, Guoqi Zhang, Fenglian Sun, Liangliang Luo. Thermal and mechanical effects of voids within flip chip soldering in LED packages |
| 2034 | -- | 2038 | Yik Yee Tan, Claudia Keller, Kok Seng Teo, Sivanyanam Rajamanickam. Influence of mobile ion in organic material used in semiconductor devices |
| 2039 | -- | 2043 | Aldo Ghisi, Stefano Mariani, Alberto Corigliano, Giorgio Allegato, Laura Oggioni. A three-scale approach to the numerical simulation of metallic bonding for MEMS packaging |
| 2044 | -- | 2047 | N. I. M. Nordin, S. M. Said, R. Ramli, M. F. M. Sabri, N. M. Sharif, N. A. F. N. M. Arifin, N. N. S. Ibrahim. Microstructure of Sn-1Ag-0.5Cu solder alloy bearing Fe under salt spray test |
| 2048 | -- | 2052 | Juha Pippola, Tuomas Marttila, Laura Frisk. Protective coatings of electronics under harsh thermal shock |
| 2053 | -- | 2057 | Yang Liu, Fenglian Sun, Hongwu Zhang, J. Wang, Zhen Zhou. Evaluating board level solder interconnects reliability using vibration test methods |
| 2058 | -- | 2063 | Laura Frisk, Kirsi Saarinen-Pulli. Reliability of adhesive joined thinned chips on flexible substrates under humid conditions |
| 2064 | -- | 2069 | Yann Weber, Linda Buffo, Béatrice Vanhuffel, Nicholas Lee, Neal Stirlen, Jeff Chen, Xiang-Dong Wang. Signal noise perturbation on automotive mixed-mode semiconductor device generated by graded substrate defect |
| 2070 | -- | 2074 | Thomas Schweinböck, Sören Hommel. Quantitative Scanning Microwave Microscopy: A calibration flow |
| 2075 | -- | 2080 | Antoine Reverdy, M. Marchetti, A. Fudoli, A. Pagani, V. Goubier, M. Cason, J. Alton, M. Igarashi, G. Gibbons. Electro Optical Terahertz Pulse Reflectometry, a non destructive technique to localize defects on various type of package |
| 2081 | -- | 2087 | Mauro Ciappa, Alexey Yu. Illarionov, Emre Ilgünsatiroglu. Exact 3D simulation of Scanning Electron Microscopy images of semiconductor devices in the presence of electric and magnetic fields |
| 2088 | -- | 2092 | Mohamed Mehdi Rebaï, Frédéric Darracq, Jean-Paul Guillet, Elise Bernou, Kevin Sanchez, Philippe Perdu, Dean Lewis. A comprehensive study of the application of the EOP techniques on bipolar devices |
| 2093 | -- | 2098 | Jan Gaudestad, Antonio Orozco. Magnetic Field Imaging for non destructive 3D IC testing |
| 2099 | -- | 2104 | Samuel Chef, Bastien Billiot, Sabir Jacquir, Kevin Sanchez, Philippe Perdu, Stéphane Binczak. Pattern image enhancement by extended depth of field |
| 2105 | -- | 2108 | Arkadiusz Glowacki, Christian Boit, Philippe Perdu, Yoshitaka Iwaki. Backside spectroscopic photon emission microscopy using intensified silicon CCD |
| 2109 | -- | 2114 | Elena Mengotti, Liliana I. Duarte, Juha Pippola, Laura Frisk. Fretting corrosion: Analysis of the failure mechanism for low voltage drives applications |
| 2115 | -- | 2117 | Erik Paul, Holger Herzog, Sören Jansen, Christian Hobert, Eckhard Langer. SEM-based nanoprobing on 32 and 28 nm CMOS devices challenges for semiconductor failure analysis |
| 2118 | -- | 2122 | Georg Michael Reuther, Reinhard Pufall, Michael Goroll. Acoustic detection of micro-cracks in small electronic devices |
| 2123 | -- | 2127 | Mauro Ciappa, Emre Ilgünsatiroglu, Alexey Yu. Illarionov. Exploring the limits of scanning electron microscopy for the metrology of critical dimensions of photoresist structures in the nanometer range |
| 2128 | -- | 2132 | Stefan Doering, Ralf Rudolf, Martin Pinkert, Hagen Roetz, Catejan Wagner, Stefan Eckl, Marc Strasser, Andre Wachowiak, Thomas Mikolajick. Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage |
| 2133 | -- | 2137 | Wolfhard H. Zisser, Hajdin Ceric, Josef Weinbub, Siegfried Selberherr. Electromigration reliability of open TSV structures |
| 2138 | -- | 2141 | Matteo Dal Lago, Matteo Meneghini, C. De Santi, Marco Barbato, Nicola Trivellin, Gaudenzio Meneghesso, Enrico Zanoni. ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms |
| 2142 | -- | 2146 | Heinz-Christoph Neitzert, Giovanni Landi. Temperature dependent optoelectronic properties of a non-intentionally created cleaved-coupled-cavity laser |
| 2147 | -- | 2150 | Carlo De Santi, Matteo Meneghini, Michael Marioli, Matteo Buffolo, Nicola Trivellin, T. Weig, K. Holc, K. Köhler, J. Wagner, U. T. Schwarz, Gaudenzio Meneghesso, Enrico Zanoni. Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage |
| 2151 | -- | 2153 | Giovanna Mura, Massimo Vanzi, Giulia Marcello. FIB-induced electro-optical alterations in a DFB InP laser diode |
| 2154 | -- | 2158 | F. Jose Arques Orobon, Neftalí Núñez, Manuel Vázquez, Vicente Gonzalez Posadas. UV LEDs reliability tests for fluoro-sensing sensor application |
| 2159 | -- | 2163 | Matroni Koutsoureli, Loukas Michalas, Anestis Gantis, George J. Papaioannou. A study of deposition conditions on charging properties of PECVD silicon nitride films for MEMS capacitive switches |
| 2164 | -- | 2166 | Jung Han Kang, Edward Namkyu Cho, Ilgu Yun. Conduction instability of amorphous InGaZnO thin-film transistors under constant drain current stress |
| 2167 | -- | 2170 | Dae-Hyun Kim, Jong-Tae Park. The effect of gate overlap on the device degradation in IGZO thin film transistors |
| 2171 | -- | 2175 | Marcelino Seif, Fabien Pascal, Bruno Sagnes, Alain Hoffmann, Sébastien Haendler, Pascal Chevalier, Daniel Gloria. Dispersion study of DC and Low Frequency Noise in SiGe: C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications |
| 2176 | -- | 2179 | Wonwook Oh, Seongtak Kim, Soo Hyun Bae, Nochang Park, Yoonmook Kang, Hae-Seok Lee, Donghwan Kim. The degradation of multi-crystalline silicon solar cells after damp heat tests |
| 2180 | -- | 2184 | Peyman Rafiee, Golta Khatibi. A fast reliability assessment method for Si MEMS based microcantilever beams |
| 2185 | -- | 2190 | Asad Fayyaz, Li Yang, Michele Riccio, Alberto Castellazzi, Andrea Irace. Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs |
| 2191 | -- | 2195 | Sergey A. Chevtchenko, Matthias Schulz, Eldad Bahat-Treidel, Wilfred John, Stephan Freyer, Paul Kurpas, Joachim Würfl. Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors |
| 2196 | -- | 2199 | Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere. Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes |
| 2200 | -- | 2206 | Carmine Abbate, Giovanni Busatto, Paolo Cova, Nicola Delmonte, F. Giuliani, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi. Thermal damage in SiC Schottky diodes induced by SE heavy ions |
| 2207 | -- | 2212 | Javier Leon, Xavier Perpiñà, Viorel Banu, Josep Montserrat, Maxime Berthou, Miquel Vellvehí, Philippe Godignon, Xavier Jordà. Temperature effects on the ruggedness of SiC Schottky diodes under surge current |
| 2213 | -- | 2216 | Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni. Proton induced trapping effect on space compatible GaN HEMTs |
| 2217 | -- | 2221 | Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin. Analysis of an ESD failure mechanism on a SiC MESFET |
| 2222 | -- | 2226 | Alessandro Chini, Fabio Soci, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni. Traps localization and analysis in GaN HEMTs |
| 2227 | -- | 2231 | Takashi Katsuno, Takaaki Manaka, Tsuyoshi Ishikawa, Hiroyuki Ueda, Tsutomu Uesugi, Mitsumasa Iwamoto. Degradation analysis and current collapse imaging of AlGaN/GaN HEMTs by measurement of electric field-induced optical second-harmonic generation |
| 2232 | -- | 2236 | Tian-Li Wu, Denis Marcon, Steve Stoffels, Shuzhen You, Brice De Jaeger, Marleen Van Hove, Guido Groeseneken, Stefaan Decoutere. Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress |
| 2237 | -- | 2241 | Antonio Stocco, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni. Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications |
| 2242 | -- | 2247 | Vineet Unni, Hiroji Kawai, E. M. Sankara Narayanan. Crosstalk in monolithic GaN-on-Silicon power electronic devices |
| 2248 | -- | 2252 | Isabella Rossetto, Fabiana Rampazzo, Matteo Meneghini, M. Silvestri, Christian Dua, Piero Gamarra, Raphael Aubry, Marie-Antoinette di Forte-Poisson, O. Patard, Sylvain L. Delage, Gaudenzio Meneghesso, Enrico Zanoni. Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs |
| 2253 | -- | 2257 | Nagarajan Raghavan. Performance and reliability trade-offs for high-κ RRAM |
| 2258 | -- | 2261 | Baojun Tang, Weidong Zhang, Laurent Breuil, Colin Robinson, Yunqi Wang, Maria Toledano-Luque, Geert Van den bosch, Jianfu Zhang, Jan Van Houdt. Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations |
| 2262 | -- | 2265 | Vincenzo Della Marca, Jérémy Postel-Pellerin, Guillaume Just, Pierre Canet, Jean-Luc Ogier. Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories |
| 2266 | -- | 2271 | Nagarajan Raghavan, Michel Bosman, Daniel D. Frey, Kin Leong Pey. Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices |
| 2272 | -- | 2277 | Bertrand Courivaud, Nicolas Nolhier, Gilles Ferru, Marise Bafleur, Fabrice Caignet. Reliability of ESD protection devices designed in a 3D technology |
| 2278 | -- | 2283 | Jean-Luc Autran, Maximilien Glorieux, Daniela Munteanu, Sylvain Clerc, Gilles Gasiot, Philippe Roche. Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits |
| 2284 | -- | 2288 | Daniela Munteanu, Jean-Luc Autran. Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation |
| 2289 | -- | 2294 | Jean-Max Dutertre, Rodrigo Possamai Bastos, Olivier Potin, Marie-Lise Flottes, Bruno Rouzeyre, Giorgio Di Natale, Alexandre Sarafianos. Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS |
| 2295 | -- | 2299 | Nagarajan Raghavan, Michel Bosman, Kin Leong Pey. Assessment of read disturb immunity in conducting bridge memory devices - A thermodynamic perspective |
| 2300 | -- | 2305 | Laurent Artola, Guillaume Hubert, Massimo Alioto. Comparative soft error evaluation of layout cells in FinFET technology |
| 2306 | -- | 2309 | Xinggong Wan, Sandhya Chandrashekhar, Boris Bayha, Martin Trentzsch, Torben Balzer, Mahesh Siddabathula, Oliver Aubel. A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28 nm node |
| 2310 | -- | 2314 | Gunnar Andreas Rott, Karina Rott, Hans Reisinger, Wolfgang Gustin, Tibor Grasser. Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors |
| 2315 | -- | 2318 | Jae-Hoon Lee, Jong-Tae Park. Crystallographic-orientation-dependent GIDL current in Tri-gate MOSFETs under hot carrier stress |
| 2319 | -- | 2324 | Cristina Meinhardt, Alexandra L. Zimpeck, Ricardo A. L. Reis. Predictive evaluation of electrical characteristics of sub-22 nm FinFET technologies under device geometry variations |
| 2325 | -- | 2328 | Jin Hyung Choi, Jin-Woo Han, Chong-Gun Yu, Jong-Tae Park. Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs |
| 2329 | -- | 2333 | Sharifah Wan Muhamad Hatta, Zhigang Ji, Jian Fu Zhang, Weidong Zhang, Norhayati Soin, Ben Kaczer, Stefan De Gendt, Guido Groeseneken. Energy distribution of positive charges in high-k dielectric |
| 2334 | -- | 2338 | Y. Abdul Wahab, Norhayati Soin, Sharifah Wan Muhamad Hatta. Defects evolution involving interface dispersion approaches in high-k/metal-gate deep-submicron CMOS |
| 2339 | -- | 2343 | Kenneth Potter, Katrina A. Morgan, Chris Shaw, Peter Ashburn, William Redman-White, C. H. De Groot. Total ionizing dose response of fluorine implanted Silicon-On-Insulator buried oxide |
| 2344 | -- | 2348 | Fernanda Lima Kastensmidt, Jorge Tonfat, Thiago Hanna Both, Paolo Rech, Gilson I. Wirth, Ricardo Reis, Florent Bruguier, Pascal Benoit, Lionel Torres, Christopher Frost. Voltage scaling and aging effects on soft error rate in SRAM-based FPGAs |