Journal: Microelectronics Reliability

Volume 54, Issue 9-10

1637 -- 0Christian Boit. Editorial
1638 -- 1642Nicola Wrachien, Andrea Cester, N. Lago, Gaudenzio Meneghesso, Riccardo D'Alpaos, Andrea Stefani, Guido Turatti, Michele Muccini. Stress-induced degradation of p- and n-type organic thin-film-transistors in the ON and OFF states
1643 -- 1647Indranil Bose, Kornelius Tetzner, Kathrin Borner, Karlheinz Bock. Air-stable, high current density, solution-processable, amorphous organic rectifying diodes (ORDs) for low-cost fabrication of flexible passive low frequency RFID tags
1648 -- 1654Werner Kanert. Robustness Validation - A physics of failure based approach to qualification
1655 -- 1660Nicolae Cristian Sintamarean, Huai Wang, Frede Blaabjerg, Peter de Place Rimmen. A design tool to study the impact of mission-profile on the reliability of SiC-based PV-inverter devices
1661 -- 1665A. Mavinkurve, Leon Goumans, G. M. O'Halloran, R. T. H. Rongen, M.-L. Farrugia. Copper wire interconnect reliability evaluation using in-situ High Temperature Storage Life (HTSL) tests
1666 -- 1670Wee Loon Ng, Kheng Chok Tee, Junfeng Liu, Yong Chiang Ee, Oliver Aubel, Chuan Seng Tan, Kin Leong Pey. Robust Electromigration reliability through engineering optimization
1671 -- 1674Oliver Aubel, Armand Beyer, Georg Talut, Martin Gall. Empirical BEOL-TDDB evaluation based on I(t)-trace analysis
1675 -- 1679B. J. Tang, Kris Croes, Y. Barbarin, Y. Q. Wang, Robin Degraeve, Y. Li, M. Toledano-Luque, T. Kauerauf, J. Bömmels, Zsolt Tokei, Ingrid De Wolf. As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability
1680 -- 1685David Squiller, Hannes Greve, Elena Mengotti, F. P. McCluskey. Physics-of-failure assessment methodology for power electronic systems
1686 -- 1691Matthias Steiert, Jürgen Wilde. Influence of dicing damages on the thermo-mechanical reliability of bare-chip assemblies
1692 -- 1696Giulio Marti, Lucile Arnaud, Yves Wouters. Study of EM void nucleation and mechanic relaxation effects
1697 -- 1701Lifang Liu, Antonio Arreghini, Geert Van den bosch, Liyang Pan, Jan Van Houdt. Assessment methodology of the lateral migration component in data retention of 3D SONOS memories
1702 -- 1706Boukary Ouattara, Lise Doyen, David Ney, Habib Mehrez, Pirouz Bazargan-Sabet. Power grid redundant path contribution in system on chip (SoC) robustness against electromigration
1707 -- 1711J. Blasco, Helena Castán, Héctor García, Salvador Dueñas, J. Suñé, Marianna Kemell, Kaupo Kukli, Mikko Ritala, Markku Leskelä, E. Miranda. x-based MIM capacitors
1712 -- 1717Kalya Shubhakar, Nagarajan Raghavan, Sunil Singh Kushvaha, Michel Bosman, Zhongrui Wang, Sean J. O'Shea, Kin Leong Pey. x interfacial layer
1718 -- 1723Thomas Santini, Sébastien Morand, Mitra Fouladirad, Luong-Viêt Phung, Florent Miller, Bruno Foucher, Antoine Grall, Bruno Allard. Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessment
1724 -- 1728Jörg Kludt, Kirsten Weide-Zaage, Markus Ackermann, Verena Hein, Christian Kovács. Degradation behavior in upstream/downstream via test structures
1729 -- 1734Nagarajan Raghavan, Daniel D. Frey, Kin Leong Pey. Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory
1735 -- 1740M. Fuegl, G. Mackh, E. Meissner, L. Frey. Analytical stress characterization after different chip separation methods
1741 -- 1744Andreas Rückerl, Sophia Huppmann, Roland Zeisel, Simeon Katz. Monolithic integrable capacitive humidity sensing method for material characterization of dielectric thin films
1745 -- 1748Aleksandr S. Petrov, Konstantin I. Tapero, Viktor N. Ulimov. Influence of temperature and dose rate on the degradation of BiCMOS operational amplifiers during total ionizing dose testing
1749 -- 1752Louis Gerrer, Salvatore M. Amoroso, Razaidi Hussin, Asen Asenov. RTN distribution comparison for bulk, FDSOI and FinFETs devices
1753 -- 1757N. Duan, T. Bach, J. Shen, R. Rongen. Comparison of in-situ measurement techniques of solder joint reliability under thermo-mechanical stresses
1758 -- 1763Michael Elßner. Vacuum quality evaluation for uncooled micro bolometer thermal imager sensors
1764 -- 1769Julien Magnien, Golta Khatibi. Assessment of mechanical reliability of surface mounted capacitor by an accelerated shear fatigue test technique
1770 -- 1773Thierry Kociniewski, Jeff Moussodji, Zoubir Khatir. μ-Raman spectroscopy for stress analysis in high power silicon devices
1774 -- 1778You Wang, Yue Zhang, Erya Deng, Jacques-Olivier Klein, Lirida A. B. Naviner, Weisheng Zhao. Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses
1779 -- 1784Huimeng Wu, David Ferranti, Lewis Stern. Precise nanofabrication with multiple ion beams for advanced circuit edit
1785 -- 1789Michél Simon-Najasek, Susanne Hübner, Frank Altmann, Andreas Graff. Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures
1790 -- 1793Christian Lang, Matthew Hiscock, Michael Dawson, Cheryl Hartfield. Local thickness and composition analysis of TEM lamellae in the FIB
1794 -- 1797Philipp Scholz, Norbert Herfurth, Michael Sadowski, Ted Lundquist, Uwe Kerst, Christian Boit. Efficient and flexible Focused Ion Beam micromachining of Solid Immersion Lenses in various bulk semiconductor materials - An adaptive calibration algorithm
1798 -- 1801Clemens Helfmeier, Rudolf Schlangen, Christian Boit. Focused ion beam contact to non-volatile memory cells
1802 -- 1805Lionel Dantas de Morais, Sophie Chevalliez, Stephanie Mouleres. Low temperature FIB cross section: Application to indium micro bumps
1806 -- 1812M. Thoben, F. Sauerland, K. Mainka, S. Edenharter, L. Beaurenaut. Lifetime modeling and simulation of power modules for hybrid electrical/electrical vehicles
1813 -- 1817R. German, Ali Sari, Pascal Venet, M. Ayadi, Olivier Briat, Jean-Michel Vinassa. Prediction of supercapacitors floating ageing with surface electrode interface based ageing law
1818 -- 1822F. P. McCluskey, N. M. Li, Elena Mengotti. Eliminating infant mortality in metallized film capacitors by defect detection
1823 -- 1827Maawad Makdessi, Ali Sari, Pascal Venet. Metallized polymer film capacitors ageing law based on capacitance degradation
1828 -- 1832Michele Riccio, L. Maresca, Andrea Irace, Giovanni Breglio, Yohei Iwahashi. Impact of gate drive voltage on avalanche robustness of trench IGBTs
1833 -- 1838G. De Falco, Michele Riccio, Giovanni Breglio, Andrea Irace. Thermal-aware design and fault analysis of a DC/DC parallel resonant converter
1839 -- 1844Xavier Perpiñà, Xavier Jordà, Javier Leon, Miquel Vellvehí, Daniel Antón, Sergio Llorente. Comparison of temperature limits for Trench silicon IGBT technologies for medium power applications
1845 -- 1850Michele Riccio, Vincenzo d'Alessandro, Andrea Irace, Gilles Rostaing, Mounira Berkani, Stéphane Lefebvre, Philippe Dupuy. 3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions
1851 -- 1855M. A. Belaïd, M. Gares, K. Daoud, Olivier Latry. Performance drifts of N-MOSFETs under pulsed RF life test
1856 -- 1861Franc Dugal, Mauro Ciappa. Study of thermal cycling and temperature aging on PbSnAg die attach solder joints for high power modules
1862 -- 1866Saskia Huber, Marius van Dijk, Hans Walter, Olaf Wittler, Tina Thomas, Klaus-Dieter Lang. Improving the FE simulation of molded packages using warpage measurements
1867 -- 1871T. Ishizaki, A. Kuno, A. Tane, M. Yanase, F. Osawa, T. Satoh, Y. Yamada. Reliability of Cu nanoparticle joint for high temperature power electronics
1872 -- 1876R. Randoll, W. Wondrak, A. Schletz. Dielectric strength and thermal performance of PCB-embedded power electronics
1877 -- 1882David Gross, Sabine Haag, Martin Schneider-Ramelow, Klaus-Dieter Lang. The influence of liners with Ti, Ta or Ru finish on thin Cu films
1883 -- 1886C. Olk, Stefano Aresu, R. Rudolf, M. Röhner, Wolfgang Gustin, E. Stein Von Kamienski. HCS degradation of 5 nm oxide high-voltage PLDMOS
1887 -- 1890Corinne Bergès, Pierre Soufflet, Abdeslam Jadrani. Risk and reliability assessment about a manufacturing issue in a power MOSFET for automotive applications
1891 -- 1896Junpei Takaishi, Syohei Harada, Masanori Tsukuda, Ichiro Omura. Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part II
1897 -- 1900Kazunori Hasegawa, Kenichi Yamamoto, Hidetaro Yoshida, Kota Hamada, Masanori Tsukuda, Ichiro Omura. Short-circuit protection for an IGBT with detecting the gate voltage and gate charge
1901 -- 1905Peter Dietrich. Joining and package technology for 175 °C Tj increasing reliability in automotive applications
1906 -- 1910Ihsan Supono, Jesús Urresti, Alberto Castellazzi, David Flores. Overload robust IGBT design for SSCB application
1911 -- 1915Yangang Wang, Steve Jones, A. Dai, Guoyou Liu. Reliability enhancement by integrated liquid cooling in power IGBT modules for hybrid and electric vehicles
1916 -- 1920F. Giuliani, D. Dipankar, Nicola Delmonte, Alberto Castellazzi, Paolo Cova. Robust snubberless soft-switching power converter using SiC power MOSFETs and bespoke thermal design
1921 -- 1926Son-Ha Tran, L. Dupont, Zoubir Khatir. Solder void position and size effects on electro thermal behaviour of MOSFET transistors in forward bias conditions
1927 -- 1934Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto, Annunziata Sanseverino, Francesco Velardi, Cesare Ronsisvalle, James Victory. Turn-off instabilities in large area IGBTs
1935 -- 1939Markus Andresen, Marco Liserre. Impact of active thermal management on power electronics design
1940 -- 1943YanDong He, Ganggang Zhang, Xing Zhang. NBTI degradation in STI-based LDMOSFETs
1944 -- 1948M. Ayadi, Olivier Briat, R. Lallemand, A. Eddahech, R. German, Gerard Coquery, Jean-Michel Vinassa. Description of supercapacitor performance degradation rate during thermal cycling under constant voltage ageing test
1949 -- 1952Yunlong Li, Stefaan Van Huylenbroeck, Els Van Besien, Xiaoping Shi, Chen Wu, Michele Stucchi, Gerald Beyer, Eric Beyne, Ingrid De Wolf, Kristof Croes. Reliability challenges for barrier/liner system in high aspect ratio through silicon vias
1953 -- 1958Lado Filipovic, Siegfried Selberherr. The effects of etching and deposition on the performance and stress evolution of open through silicon vias
1959 -- 1962Christoph Sander, Yvonne Standke, Sven Niese, Rüdiger Rosenkranz, André Clausner, Martin Gall, Ehrenfried Zschech. Advanced methods for mechanical and structural characterization of nanoscale materials for 3D IC integration
1963 -- 1968Dietmar Vogel, Ellen Auerswald, Jürgen Auersperg, Parisa Bayat, Raul D. Rodriguez, Dietrich R. T. Zahn, Sven Rzepka, Bernd Michel. Stress analyses of high spatial resolution on TSV and BEoL structures
1969 -- 1971Jörg Dreybrodt, Yves Dupraz. Study of the UBM to copper interface robustness of solder bumps in flip chip packages
1972 -- 1976A. El Amrani, A. Benali, M. Bouya, M. Faqir, K. Demir, A. Hadjoudja, M. Ghogho. A study of through package vias in a glass interposer for multifunctional and miniaturized systems
1977 -- 1981Verena Hein, Jörg Kludt, Kirsten Weide-Zaage. Evaluation new corner stress relief structure layout for high robust metallization
1982 -- 1987George Vakanas, Björn Vandecasteele, David Schaubroek, Joke De Messemaeker, Geert Willems, Mark Ashworth, Geoffrey D. Wilcox, Ingrid De Wolf. Sn whisker evaluations in 3D microbumped structures
1988 -- 1994R. T. H. Rongen, R. Roucou, P. J. vd Wel, F. C. Voogt, F. Swartjes, Kirsten Weide-Zaage. Reliability of Wafer Level Chip Scale Packages
1995 -- 1999Jörg C. Krinke, Dragica Dragicevic, Susann Leinert, Erik Frieß, Joachim Glück. High temperature degradation of palladium coated copper bond wires
2000 -- 2005Benjamin März, Andreas Graff, Robert Klengel, Matthias Petzold. Interface microstructure effects in Au thermosonic ball bonding contacts by high reliability wire materials
2006 -- 2012Elaheh Arjmand, Pearl A. Agyakwa, C. Mark Johnson. Reliability of thick Al wire: A study of the effects of wire bonding parameters on thermal cycling degradation rate using non-destructive methods
2013 -- 2016Hélène Frémont, Jörg Kludt, Massar Wade, Kirsten Weide-Zaage, Isabelle Bord-Majek, Geneviève Duchamp. Qualification procedure for moisture in embedded capacitors
2017 -- 2022Sanna Lahokallio, Janne Kiilunen, Laura Frisk. High temperature reliability of electrically conductive adhesive attached temperature sensors on flexible polyimide substrates
2023 -- 2027Harald Preu, Jochen Feilmeier, Markus Lang, Norbert Soellner, Jürgen Walter, Walter Mack. A study on electrochemical effects in external capacitor packages
2028 -- 2033Yang Liu, Stanley Y. Y. Leung, Jia Zhao, Cell K. Y. Wong, Cadmus A. Yuan, Guoqi Zhang, Fenglian Sun, Liangliang Luo. Thermal and mechanical effects of voids within flip chip soldering in LED packages
2034 -- 2038Yik Yee Tan, Claudia Keller, Kok Seng Teo, Sivanyanam Rajamanickam. Influence of mobile ion in organic material used in semiconductor devices
2039 -- 2043Aldo Ghisi, Stefano Mariani, Alberto Corigliano, Giorgio Allegato, Laura Oggioni. A three-scale approach to the numerical simulation of metallic bonding for MEMS packaging
2044 -- 2047N. I. M. Nordin, S. M. Said, R. Ramli, M. F. M. Sabri, N. M. Sharif, N. A. F. N. M. Arifin, N. N. S. Ibrahim. Microstructure of Sn-1Ag-0.5Cu solder alloy bearing Fe under salt spray test
2048 -- 2052Juha Pippola, Tuomas Marttila, Laura Frisk. Protective coatings of electronics under harsh thermal shock
2053 -- 2057Yang Liu, Fenglian Sun, Hongwu Zhang, J. Wang, Zhen Zhou. Evaluating board level solder interconnects reliability using vibration test methods
2058 -- 2063Laura Frisk, Kirsi Saarinen-Pulli. Reliability of adhesive joined thinned chips on flexible substrates under humid conditions
2064 -- 2069Yann Weber, Linda Buffo, Béatrice Vanhuffel, Nicholas Lee, Neal Stirlen, Jeff Chen, Xiang-Dong Wang. Signal noise perturbation on automotive mixed-mode semiconductor device generated by graded substrate defect
2070 -- 2074Thomas Schweinböck, Sören Hommel. Quantitative Scanning Microwave Microscopy: A calibration flow
2075 -- 2080Antoine Reverdy, M. Marchetti, A. Fudoli, A. Pagani, V. Goubier, M. Cason, J. Alton, M. Igarashi, G. Gibbons. Electro Optical Terahertz Pulse Reflectometry, a non destructive technique to localize defects on various type of package
2081 -- 2087Mauro Ciappa, Alexey Yu. Illarionov, Emre Ilgünsatiroglu. Exact 3D simulation of Scanning Electron Microscopy images of semiconductor devices in the presence of electric and magnetic fields
2088 -- 2092Mohamed Mehdi Rebaï, Frédéric Darracq, Jean-Paul Guillet, Elise Bernou, Kevin Sanchez, Philippe Perdu, Dean Lewis. A comprehensive study of the application of the EOP techniques on bipolar devices
2093 -- 2098Jan Gaudestad, Antonio Orozco. Magnetic Field Imaging for non destructive 3D IC testing
2099 -- 2104Samuel Chef, Bastien Billiot, Sabir Jacquir, Kevin Sanchez, Philippe Perdu, Stéphane Binczak. Pattern image enhancement by extended depth of field
2105 -- 2108Arkadiusz Glowacki, Christian Boit, Philippe Perdu, Yoshitaka Iwaki. Backside spectroscopic photon emission microscopy using intensified silicon CCD
2109 -- 2114Elena Mengotti, Liliana I. Duarte, Juha Pippola, Laura Frisk. Fretting corrosion: Analysis of the failure mechanism for low voltage drives applications
2115 -- 2117Erik Paul, Holger Herzog, Sören Jansen, Christian Hobert, Eckhard Langer. SEM-based nanoprobing on 32 and 28 nm CMOS devices challenges for semiconductor failure analysis
2118 -- 2122Georg Michael Reuther, Reinhard Pufall, Michael Goroll. Acoustic detection of micro-cracks in small electronic devices
2123 -- 2127Mauro Ciappa, Emre Ilgünsatiroglu, Alexey Yu. Illarionov. Exploring the limits of scanning electron microscopy for the metrology of critical dimensions of photoresist structures in the nanometer range
2128 -- 2132Stefan Doering, Ralf Rudolf, Martin Pinkert, Hagen Roetz, Catejan Wagner, Stefan Eckl, Marc Strasser, Andre Wachowiak, Thomas Mikolajick. Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage
2133 -- 2137Wolfhard H. Zisser, Hajdin Ceric, Josef Weinbub, Siegfried Selberherr. Electromigration reliability of open TSV structures
2138 -- 2141Matteo Dal Lago, Matteo Meneghini, C. De Santi, Marco Barbato, Nicola Trivellin, Gaudenzio Meneghesso, Enrico Zanoni. ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms
2142 -- 2146Heinz-Christoph Neitzert, Giovanni Landi. Temperature dependent optoelectronic properties of a non-intentionally created cleaved-coupled-cavity laser
2147 -- 2150Carlo De Santi, Matteo Meneghini, Michael Marioli, Matteo Buffolo, Nicola Trivellin, T. Weig, K. Holc, K. Köhler, J. Wagner, U. T. Schwarz, Gaudenzio Meneghesso, Enrico Zanoni. Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage
2151 -- 2153Giovanna Mura, Massimo Vanzi, Giulia Marcello. FIB-induced electro-optical alterations in a DFB InP laser diode
2154 -- 2158F. Jose Arques Orobon, Neftalí Núñez, Manuel Vázquez, Vicente Gonzalez Posadas. UV LEDs reliability tests for fluoro-sensing sensor application
2159 -- 2163Matroni Koutsoureli, Loukas Michalas, Anestis Gantis, George J. Papaioannou. A study of deposition conditions on charging properties of PECVD silicon nitride films for MEMS capacitive switches
2164 -- 2166Jung Han Kang, Edward Namkyu Cho, Ilgu Yun. Conduction instability of amorphous InGaZnO thin-film transistors under constant drain current stress
2167 -- 2170Dae-Hyun Kim, Jong-Tae Park. The effect of gate overlap on the device degradation in IGZO thin film transistors
2171 -- 2175Marcelino Seif, Fabien Pascal, Bruno Sagnes, Alain Hoffmann, Sébastien Haendler, Pascal Chevalier, Daniel Gloria. Dispersion study of DC and Low Frequency Noise in SiGe: C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications
2176 -- 2179Wonwook Oh, Seongtak Kim, Soo Hyun Bae, Nochang Park, Yoonmook Kang, Hae-Seok Lee, Donghwan Kim. The degradation of multi-crystalline silicon solar cells after damp heat tests
2180 -- 2184Peyman Rafiee, Golta Khatibi. A fast reliability assessment method for Si MEMS based microcantilever beams
2185 -- 2190Asad Fayyaz, Li Yang, Michele Riccio, Alberto Castellazzi, Andrea Irace. Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs
2191 -- 2195Sergey A. Chevtchenko, Matthias Schulz, Eldad Bahat-Treidel, Wilfred John, Stephan Freyer, Paul Kurpas, Joachim Würfl. Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors
2196 -- 2199Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere. Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes
2200 -- 2206Carmine Abbate, Giovanni Busatto, Paolo Cova, Nicola Delmonte, F. Giuliani, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi. Thermal damage in SiC Schottky diodes induced by SE heavy ions
2207 -- 2212Javier Leon, Xavier Perpiñà, Viorel Banu, Josep Montserrat, Maxime Berthou, Miquel Vellvehí, Philippe Godignon, Xavier Jordà. Temperature effects on the ruggedness of SiC Schottky diodes under surge current
2213 -- 2216Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni. Proton induced trapping effect on space compatible GaN HEMTs
2217 -- 2221Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin. Analysis of an ESD failure mechanism on a SiC MESFET
2222 -- 2226Alessandro Chini, Fabio Soci, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni. Traps localization and analysis in GaN HEMTs
2227 -- 2231Takashi Katsuno, Takaaki Manaka, Tsuyoshi Ishikawa, Hiroyuki Ueda, Tsutomu Uesugi, Mitsumasa Iwamoto. Degradation analysis and current collapse imaging of AlGaN/GaN HEMTs by measurement of electric field-induced optical second-harmonic generation
2232 -- 2236Tian-Li Wu, Denis Marcon, Steve Stoffels, Shuzhen You, Brice De Jaeger, Marleen Van Hove, Guido Groeseneken, Stefaan Decoutere. Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress
2237 -- 2241Antonio Stocco, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni. Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications
2242 -- 2247Vineet Unni, Hiroji Kawai, E. M. Sankara Narayanan. Crosstalk in monolithic GaN-on-Silicon power electronic devices
2248 -- 2252Isabella Rossetto, Fabiana Rampazzo, Matteo Meneghini, M. Silvestri, Christian Dua, Piero Gamarra, Raphael Aubry, Marie-Antoinette di Forte-Poisson, O. Patard, Sylvain L. Delage, Gaudenzio Meneghesso, Enrico Zanoni. Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs
2253 -- 2257Nagarajan Raghavan. Performance and reliability trade-offs for high-κ RRAM
2258 -- 2261Baojun Tang, Weidong Zhang, Laurent Breuil, Colin Robinson, Yunqi Wang, Maria Toledano-Luque, Geert Van den bosch, Jianfu Zhang, Jan Van Houdt. Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations
2262 -- 2265Vincenzo Della Marca, Jérémy Postel-Pellerin, Guillaume Just, Pierre Canet, Jean-Luc Ogier. Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories
2266 -- 2271Nagarajan Raghavan, Michel Bosman, Daniel D. Frey, Kin Leong Pey. Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices
2272 -- 2277Bertrand Courivaud, Nicolas Nolhier, Gilles Ferru, Marise Bafleur, Fabrice Caignet. Reliability of ESD protection devices designed in a 3D technology
2278 -- 2283Jean-Luc Autran, Maximilien Glorieux, Daniela Munteanu, Sylvain Clerc, Gilles Gasiot, Philippe Roche. Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits
2284 -- 2288Daniela Munteanu, Jean-Luc Autran. Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation
2289 -- 2294Jean-Max Dutertre, Rodrigo Possamai Bastos, Olivier Potin, Marie-Lise Flottes, Bruno Rouzeyre, Giorgio Di Natale, Alexandre Sarafianos. Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS
2295 -- 2299Nagarajan Raghavan, Michel Bosman, Kin Leong Pey. Assessment of read disturb immunity in conducting bridge memory devices - A thermodynamic perspective
2300 -- 2305Laurent Artola, Guillaume Hubert, Massimo Alioto. Comparative soft error evaluation of layout cells in FinFET technology
2306 -- 2309Xinggong Wan, Sandhya Chandrashekhar, Boris Bayha, Martin Trentzsch, Torben Balzer, Mahesh Siddabathula, Oliver Aubel. A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28 nm node
2310 -- 2314Gunnar Andreas Rott, Karina Rott, Hans Reisinger, Wolfgang Gustin, Tibor Grasser. Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors
2315 -- 2318Jae-Hoon Lee, Jong-Tae Park. Crystallographic-orientation-dependent GIDL current in Tri-gate MOSFETs under hot carrier stress
2319 -- 2324Cristina Meinhardt, Alexandra L. Zimpeck, Ricardo A. L. Reis. Predictive evaluation of electrical characteristics of sub-22 nm FinFET technologies under device geometry variations
2325 -- 2328Jin Hyung Choi, Jin-Woo Han, Chong-Gun Yu, Jong-Tae Park. Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs
2329 -- 2333Sharifah Wan Muhamad Hatta, Zhigang Ji, Jian Fu Zhang, Weidong Zhang, Norhayati Soin, Ben Kaczer, Stefan De Gendt, Guido Groeseneken. Energy distribution of positive charges in high-k dielectric
2334 -- 2338Y. Abdul Wahab, Norhayati Soin, Sharifah Wan Muhamad Hatta. Defects evolution involving interface dispersion approaches in high-k/metal-gate deep-submicron CMOS
2339 -- 2343Kenneth Potter, Katrina A. Morgan, Chris Shaw, Peter Ashburn, William Redman-White, C. H. De Groot. Total ionizing dose response of fluorine implanted Silicon-On-Insulator buried oxide
2344 -- 2348Fernanda Lima Kastensmidt, Jorge Tonfat, Thiago Hanna Both, Paolo Rech, Gilson I. Wirth, Ricardo Reis, Florent Bruguier, Pascal Benoit, Lionel Torres, Christopher Frost. Voltage scaling and aging effects on soft error rate in SRAM-based FPGAs