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Viewing Publication 1 - 100 from 817
2023
53rd IEEE European Solid-State Device Research Conference, ESSDERC 2023, Lisbon, Portugal, September 11-14, 2023
IEEE,
2023.
[doi]
Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applications
Sukhrob Abdulazhanov
,
Quang Huy Le
,
Dang Khoa Huynh
,
Maximilian Lederer
,
Yannick Raffel
,
Kai Ni 0004
,
Xunzhao Yin
,
Thomas Kämpfe
,
Gerald Gerlach
.
essderc 2023
:
113-116
[doi]
Characterisation of Photodiodes in 22 nm FDSOI at 850 nm
Jelle H. T. Bakker
,
Mark S. Oude Alink
,
Jurriaan Schmitz
,
Bram Nauta
.
essderc 2023
:
65-68
[doi]
Characterization and Modeling of High Voltage MOS Robustness During Recirculation in Smart Power technologies
Michele Basso
,
Marco Sambi
,
Andrea Marcovati
.
essderc 2023
:
156-159
[doi]
Bias Spectroscopy of Negative Differential Resistance in Ge Nanowire Cascode Circuits
Raphael Behrle
,
Martien I. Den Hertog
,
Alois Lugstein
,
Walter M. Weber
,
Masiar Sistani
.
essderc 2023
:
37-40
[doi]
RF performance of Standard, High-Resistivity and Trap-Rich Silicon substrates down to cryogenic temperature
Q. Berlingard
,
M. Moulin
,
J.-P. Michel
,
T. Fache
,
I. Charlet
,
C. Plantier
,
Z. Chalupa
,
Jose Lugo-Alvarez
,
Jean-Pierre Raskin
,
Louis Hutin
,
Mikaël Cassé
.
essderc 2023
:
148-151
[doi]
Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO2 Spiking Neuron
Noémie Bidoul
,
Teodor Rosca
,
Adrian M. Ionescu
,
Denis Flandre
.
essderc 2023
:
81-84
[doi]
® Device Optimization for mmW PA
Mingcheng Chang
,
Zaid Al-Husseini
,
Shafi Syed
,
Wafa Arfaoui
,
Tianbing Chen
,
Andreas Knorr
.
essderc 2023
:
105-108
[doi]
Performance Comparison of SRAM Designs Implemented with Silicon-On-Insulator Nanosheet Transistors and Bulk FinFETs
Po-Chih Chen
,
Yi-Ting Wu
,
Meng-Hsueh Chiang
.
essderc 2023
:
73-76
[doi]
40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications
S. Crémer
,
N. Pelloux
,
F. Gianesello
,
Y. Mourier
,
G. Haury
,
Tulio Chaves de Albuquerque
,
Frederic Monsieur
,
H. Audouin
,
C. A. Legrand
,
C. Diouf
,
J. Azevedo Goncalves
,
C. Belem Goncalves
,
C. Durand
,
N. Vulliet
,
L. Berthier
,
Emeline Souchier
,
P. Garcia
,
S. Jan
,
M. Hello
,
M. L. Rellier
,
Patrick Scheer
,
B. Duriez
,
Xavier Garros
,
T. Bordignon
,
F. Paillardet
,
Pascal Chevalier 0002
.
essderc 2023
:
101-104
[doi]
Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films
Hannes Dahlberg
,
Lars-Erik Wernersson
.
essderc 2023
:
33-36
[doi]
Integration of HfO2-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory
T. Dubreuil
,
S. Barraud
,
J.-M. Pedini
,
J.-M. Hartmann
,
F. Boulard
,
A. Sarrazin
,
A. Gharbi
,
Johannes Sturm
,
A. Lambert
,
S. Martin
,
N. Castellani
,
A. Anotta
,
A. Magalhaes-Lucas
,
Aurelie Souhaite
,
François Andrieu
.
essderc 2023
:
117-120
[doi]
28Si for spin qubit applications
G. Elbaz
,
Mikaël Cassé
,
V. Labracherie
,
G. Roussely
,
Benoit Bertrand
,
Heimanu Niebojewski
,
Maud Vinet
,
F. Balestro
,
Matias Urdampilleta
,
Tristan Meunier
,
Bruna Cardoso Paz
.
essderc 2023
:
5-8
[doi]
A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs
Rana ElKashlan
,
Hao Yu
,
Ahmad Khaled
,
Sachin Yadav
,
Uthayasankaran Peralagu
,
AliReza Alian
,
Nadine Collaert
,
Piet Wambacq
,
Bertrand Parvais
.
essderc 2023
:
152-155
[doi]
A Model for the Open-Circuit Voltage Dependence on Temperature for Integrated Diodes
Pablo Fernández-Peramo
,
Juan A. Leñero-Bardallo
,
María López-Carmona
,
Ángel Rodríguez-Vázquez
.
essderc 2023
:
49-52
[doi]
STT-MRAM Stochastic and Defects-aware DTCO for Last Level Cache at Advanced Process Nodes
F. García-Redondo
,
S. Rao
,
M. Gupta
,
Manu Perumkunnil
,
Y. Xiang
,
D. Abdi
,
Simon Van Beek
,
S. Couet
,
Marie Garcia Bardon
.
essderc 2023
:
97-100
[doi]
Improving off-state capacitance of SOI-CMOS RF switches: how good are air microcavities?
Daniel Gheysens
,
Alain Fleury
,
Stéphane Monfray
,
Frédéric Gianesello
,
Philippe Cathelin
,
Jean-François Robillard
,
David Troadec
,
Emmanuel Dubois 0002
.
essderc 2023
:
109-112
[doi]
Magnetic Domain Wall Memory: A DTCO study for Memory Applications
M. Gupta
,
Siddharth Rao
,
Gouri Sankar Kar
,
S. Couet
.
essderc 2023
:
41-44
[doi]
40nm SONOS Embedded Select in Trench Memory
Radouane Habhab
,
Vincenzo Della Marca
,
Pascal Masson
,
Nadia Miridi
,
Clement Pribat
,
Simon Jeannot
,
Thibault Kempf
,
Marc Mantelli
,
Philippe Lorenzini
,
Jean-Marc Voisin
,
Arnaud Régnier
,
Stephan Niel
,
Francesco La Rosa
.
essderc 2023
:
21-24
[doi]
2
Gaspard Hiblot
,
Taras Ravsher
,
Roger Loo
,
Bhuvaneshwari Yengula Venkata Ramana
,
Nathali Franchina-Vergel
,
Andrea Fantini
,
Shamin Houshmand Sharifi
,
Nina Bazzazian
,
Kurt Wostyn
,
Loris Angelo Labbate
,
Sebastien Couet
,
Gouri Sankar Kar
.
essderc 2023
:
164-167
[doi]
Extended Temperature Modeling of InGaAs/InP SPADs
Ekin Kizilkan
,
Utku Karaca
,
V. Pesic
,
M. J. Lee
,
Claudio Bruschini
,
A. J. SpringThorpe
,
A. W. Walker
,
C. Flueraru
,
Oliver J. Pitts
,
Edoardo Charbon
.
essderc 2023
:
140-143
[doi]
SPICE Model of SPAD Transient Intrinsic Response Validated using Mixed-Mode TCAD Simulations
Tom Klauner
,
Iman Sabri Alirezaei
,
Nicolas Roisin
,
Nicolas André
,
Denis Flandre
.
essderc 2023
:
136-139
[doi]
Ultrathin Gate Dielectric Enabled by Nanofog Aluminum Oxide on Monolayer MoS2
Jung-Soo Ko
,
Zichen Zhang
,
Sol Lee
,
Marc Jaikissoon
,
Robert K. A. Bennett
,
Kwanpyo Kim
,
Andrew C. Kummel
,
Prabhakar Bandaru
,
Eric Pop
,
Krishna C. Saraswat
.
essderc 2023
:
1-4
[doi]
MOSFET Characterization with Reduced Supply Voltage at Low Temperatures for Power Efficiency Maximization
W. C. Lin
,
H.-P. Huang
,
K.-H. Kao
,
M.-H. Chiang
,
D. Lu
,
W. C. Hsu
,
Y. H. Wang
,
W. C.-Y. Ma
,
H.-H. Tsai
,
Y.-J. Lee
,
H.-L. Chiang
,
J. F. Wang
,
Iuliana P. Radu
.
essderc 2023
:
9-12
[doi]
Understanding Distance-Dependent Variations for Analog Circuits in a FinFET Technology
Meghna Madhusudan
,
Jitesh Poojary
,
Arvind K. Sharma
,
Ramprasath S
,
Kishor Kunal
,
Sachin S. Sapatnekar
,
Ramesh Harjani
.
essderc 2023
:
69-72
[doi]
One-Pulse-Programmable Multi-Level PCM/Selector Cross-Point Memory for 20 nm Half Pitch and Beyond
Yuya Matsuzawa
,
Yuki Ohnishi
,
Kazuhiro Katono
,
Yusuke Muto
,
Takayuki Tsukagoshi
,
Hiroki Tokuhira
,
Kei Sakamoto
,
Hisakazu Matsumori
,
Hiroyuki Ode
,
Shosuke Fujii
,
Hide Tanaka
,
Takeshi Fujimaki
.
essderc 2023
:
25-28
[doi]
Modeling the Temperature Dependence of TDDB in Galvanic Isolators Based on Polymeric Dielectrics
J. L. Mazzola
,
M. Greatti
,
C. Monzio Compagnoni
,
Alessandro S. Spinelli
,
V. Marano
,
M. Lauria
,
D. Paci
,
F. Speroni
,
Gerardo Malavena
.
essderc 2023
:
1-4
[doi]
Nonlinear Compact Modeling of InP/InGaAs DHBTs with HICUM/L2
Markus Müller
,
Christoph Weimer
,
Michael Schröter
.
essderc 2023
:
45-48
[doi]
NITSRI-2D: A Surface Potential Based SPICE Compatible Model for pH-Sensitive FETs Based on 2-D Materials
Tamanna Nazeer
,
Sheikh Aamir Ahsan
.
essderc 2023
:
53-56
[doi]
Silicon Technology Innovation Opportunities for Applications at 0.1 to 1 THz Beyond that for Transistors
Kenneth K. O
,
Muhammad Awais
,
Salahuddin Tariq
,
Matthew Stark
,
Suprovo Ghosh
,
Farooq Muhammad Musab
,
Behnam Pouya
,
Haidong Guo
,
Goutham Murugesan
,
Suhwan Lee
,
Sarfraz Shariff
,
Walter Sosa Portillo
,
Frank Zhang
.
essderc 2023
:
125-131
[doi]
ePCM reliability improvement through active material carbon implantation
Elisabetta Palumbo
,
Alessandro Motta
,
Elisa Petroni
,
Daniele Gallinari
,
Annalisa Gilardini
,
Amos Galbiati
,
Massimo Borghi
,
Roberto Annunziata
,
Andrea Redaelli
.
essderc 2023
:
29-32
[doi]
Understanding the impact of La dopant position on the ferroelectric properties of hafnium zirconate
Mihaela Ioana Popovici
,
Jasper Bizindavyi
,
Gourab De
,
Dae Seon Kwon
,
Gouri Sankar Kar
,
Jan Van Houdt
.
essderc 2023
:
121-124
[doi]
Direct Measurements and Modeling of Avalanche Dynamics and Quenching in SPADs
Denis Rideau
,
Wilfried Uhring
,
R. A. Bianchi
,
Rémi Helleboid
,
Gabriel Mugny
,
Jérémy Grebot
,
Jean-Robert Manouvrier
,
R. Neri
,
F. Brun
,
Mohammadreza Dolatpoor Lakeh
,
Sven Rink
,
Jean-Baptiste Kammerer
,
Christophe Lallement
,
E. Lacombe
,
Dominique Golanski
,
Bruce Rae
,
T. M. Bah
,
F. Twaddle
,
V. Quenette
,
G. Marchand
,
Christel Buj
,
R. Fillon
,
Y. Henrion
,
Isobel Nicholson
,
Megan Agnew
,
M. Basset
,
R. Perrier
,
M. Al-Rawhani
,
Bastien Mamdy
,
S. Pellegrin
,
Gilles Gouget
,
P. Maciazek
,
Andre Juge
,
A. Dartigues
,
Hélène Wehbe-Alause
.
essderc 2023
:
144-147
[doi]
Near-IR response of highly-strained Si photodetector linking first principles and TCAD
Nicolas Roisin
,
Jean-Pierre Raskin
,
Denis Flandre
.
essderc 2023
:
132-135
[doi]
Hot-Carrier Degradation modeling of DCR drift in SPADs
Mathieu Sicre
,
David Roy 0001
,
Françis Calmon
.
essderc 2023
:
61-64
[doi]
Impact of layout and channel processing on CMOS low frequency noise variability
Fausto Simioni
,
Lorenzo Labate
,
Daniele Savio
,
Mariella Brizzi
,
Federica Ottogalli
,
Riccardo Marchetti
,
Silvia Brazzelli
,
Mattia Rossetti
.
essderc 2023
:
17-20
[doi]
New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges during Readout
Chang Su
,
Zhongxin Liang
,
Zhiyuan Fu
,
Shaodi Xu
,
Kaifeng Wang
,
Puyang Cai
,
Liang Chen
,
Ru Huang
,
Qianqian Huang
.
essderc 2023
:
89-92
[doi]
Comprehensive Modeling of Advanced Composite Magnetoresistive Devices
Viktor Sverdlov
,
Mario Bendra
,
Bernhard Pruckner
,
Simone Fiorentini
,
Wolfgang Goes
,
Siegfried Selberherr
.
essderc 2023
:
93-96
[doi]
A Study of the Variability and Design Considerations of Ferroelectric VNAND Memories With Polycrystalline Films Using An Experimentally Validated TCAD Model
M. Thesberg
,
Franz Schanovsky
,
Zlatan Stanojevic
,
Oskar Baumgartner
,
Markus Karner
.
essderc 2023
:
77-80
[doi]
Electrothermal modeling of junctionless vertical Si nanowire transistors for 3D logic circuit design
Yifan Wang
,
Chhandak Mukherjee
,
Houssem Rezgui
,
Marina Deng
,
Cristell Maneux
,
Sara Mannaa
,
Ian O'Connor
,
Jonas Müller
,
Sylvain Pelloquin
,
Guilhem Larrieu
.
essderc 2023
:
57-60
[doi]
First Foundry Platform Demonstration of Hybrid Tunnel FET and MOSFET Circuits Based on a Novel Laminated Well Isolation Technology
Kaifeng Wang
,
Yongqin Wu
,
Ye Ren
,
Renjie Wei
,
Zerui Chen
,
Jianfeng Hang
,
Zhixuan Wang
,
Fangxing Zhang
,
Lining Zhang
,
Chunyu Peng
,
Xiulong Wu
,
Le Ye
,
Kai Zheng
,
Jin Kang
,
Xusheng Wu
,
Weihai Bu
,
Ru Huang
,
Qianqian Huang
.
essderc 2023
:
13-16
[doi]
Complete Reconfigurable Boolean Logic Gates Based on One FeFET -One RRAM Technology
Yiqin Zeng
,
Zhetao Ding
,
Xueyang Li
,
Minglei Ma
,
Yue Peng
,
Rongzong Shen
,
Gaobo Lin
,
Chengji Jin
,
Xiao Yu
,
Bing Chen
,
Ran Cheng
,
Genquan Han
.
essderc 2023
:
85-88
[doi]
2022
Design exploration of IGZO diode based VCMA array design for Storage Class Memory Applications
Mohit Gupta 0004
,
Manu Perumkunnil
,
Andrea Fantini
,
Saeideh Alinezhad Chamazcoti
,
Woojin Kim
,
Marie Garcia Bardon
,
Gouri Sankar Kar
,
Arnaud Furnémont
.
essderc 2022
:
241-244
[doi]
52nd IEEE European Solid-State Device Research Conference, ESSDERC 2022, Milan, Italy, September 19-22, 2022
IEEE,
2022.
[doi]
BEoL integrated hafnium zirconium oxide varactors for tunable mmWave applications
Sukhrob Abdulazhanov
,
Dang Khoa Huynh
,
Quang Huy Le
,
David Lehninger
,
Thomas Kämpfe
,
Gerald Gerlach
.
essderc 2022
:
253-256
[doi]
Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer
AliReza Alian
,
Raúl Rodríguez
,
Sachin Yadav
,
Uthayasankaran Peralagu
,
Arturo Sibaja Hernandez
,
Vamsi Putcha
,
Ming Zhao
,
Rana ElKashlan
,
Bjorn Vermeersch
,
Hao Yu
,
Erik Bury
,
Ahmad Khaled
,
Nadine Collaert
,
Bertrand Parvais
.
essderc 2022
:
384-387
[doi]
Characterization of reset state through energy activation study in Ge-GST based ePCM
Matteo Baldo
,
Lorenzo Turconi
,
Alessandro Motta
,
Elisa Petroni
,
Luca Laurin
,
Daniele Ielmini
,
Andrea Redaelli
.
essderc 2022
:
229-232
[doi]
Highly robust and reliable power amplifiers in 22FDX and 45RFSOI technologies
A. Bossuet
,
A. Divay
,
Baudouin Martineau
,
Cedric Dehos
,
B. Blampey
,
Y. Morandini
.
essderc 2022
:
332-335
[doi]
Effect of Post Annealing on the Electrical Characteristics and Deep Level Defects of Ga2O3/SiC Heterojunction Diodes
Dong-Wook Byun
,
Min Yeong Kim
,
Soo Young Moon
,
Myeongcheol Shin
,
Michael. A Schweitz
,
Sang-Mo Koo
.
essderc 2022
:
249-252
[doi]
Enhanced Thermal Confinement in Phase-Change Memory Targeting Current Reduction
C. De Camaret
,
Guillaume Bourgeois
,
Olga Cueto
,
V. Meli
,
S. Martin
,
D. Despois
,
V. Beugin
,
Niccolo Castellani
,
Marie-Claire Cyrille
,
François Andrieu
,
Julien Arcamone
,
Y. Le-Friec
,
Gabriele Navarro
.
essderc 2022
:
233-236
[doi]
A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter
Giuseppe Capasso
,
Mauro Zanuccoli
,
Andrea Natale Tallarico
,
Claudio Fiegna
.
essderc 2022
:
392-395
[doi]
Impact of Gold Interconnect Microstructure on Electromigration Failure Time Statistics
Hajdin Ceric
,
Roberto Lacerda de Orio
,
Siegfried Selberherr
.
essderc 2022
:
301-303
[doi]
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps
Marcello Cioni
,
Nicolò Zagni
,
Alessandro Chini
.
essderc 2022
:
372-375
[doi]
InP DHBT test structure optimization towards 110 GHz characterization
Nil Davy
,
Marina Deng
,
Virginie Nodjiadjim
,
Chhandak Mukherjee
,
Muriel Riet
,
Colin Mismer
,
Jérémie Renaudier
,
Cristell Maneux
.
essderc 2022
:
320-323
[doi]
Compact Modeling of Phase Change Memory with Parameter Extractions
Feilong Ding
,
Xi Li
,
Yihan Chen
,
Zhitang Song
,
Runsheng Wang
,
Clarissa C. Prawoto
,
Mansun Chan
,
Lining Zhang
,
Ru Huang
.
essderc 2022
:
308-311
[doi]
A novel depletion mode p-GaN island HEMT and its use in a monolithically integrated start-up circuit
Loizos Efthymiou
,
Martin Arnold
,
Giorgia Longobardi
,
Florin Udrea
.
essderc 2022
:
396-399
[doi]
Spin Torques in ULTRA-Scaled MRAM Devices
Simone Fiorentini
,
Mario Bendra
,
Johannes Ender
,
Roberto Lacerda de Orio
,
Wolfgang Goes
,
Siegfried Selberherr
,
Viktor Sverdlov
.
essderc 2022
:
348-351
[doi]
Thermal Sensing Performances of Thin-Film Lateral PiN Diodes at 80 K and 300 K
Adrien Fournol
,
Jérémy Blond
,
Abdelkader Aliane
,
Hacile Kaya
,
Jérôme Meilhan
,
Laurent Dussopt
.
essderc 2022
:
285-288
[doi]
Analysis and Optimization of an Analog MOSFET with a Slit Well at Channel Center Towards Higher Output Resistance
Hiroki Fujii
,
Jaehyun Yoo
,
Dawon Jeong
,
Seongsik Min
,
Myoungsoo Kim
,
Uihui Kwon
,
Dae Sin Kim
.
essderc 2022
:
328-331
[doi]
Co-integration Process Compatible Input/Output (I/O) Device Options for GAA Nanosheet Technology
Gautam Gaddemane
,
Krishna K. Bhuwalka
,
Philippe Matagne
,
Gerhard Rzepa
,
Maarten L. Van De Put
,
Sybren Santermans
,
Oskar Baumgartner
,
Hao Wu
,
Geert Hellings
.
essderc 2022
:
265-268
[doi]
A novel Approach to measure and model Plasma Noise in Avalanche Diodes
Elmar Gondro
,
Joost Willemen
,
Peter Bauer
.
essderc 2022
:
312-315
[doi]
Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology
Hung-Chi Han
,
Farzan Jazaeri
,
Antonio A. D'Amico
,
Zhixing Zhao
,
Steffen Lehmann
,
Claudia Kretzschmar
,
Edoardo Charbon
,
Christian C. Enz
.
essderc 2022
:
269-272
[doi]
GeSn Vertical Gate-all-around Nanowire n-type MOSFETs
Yannik Junk
,
Marvin Frauenrath
,
Yi Han
,
Omar Concepción Diaz
,
Jin Hee Bae
,
Jean-Michel Hartmann
,
Detlev Grützmacher
,
Dan Buca
,
Qing-Tai Zhao
.
essderc 2022
:
364-367
[doi]
Influence of Metal on Schottky Barrier Inhomogeneity in Ga2O3 Schottky Barrier Diodes
Min Yeong Kim
,
Geon Hee Lee
,
Hee-Jae Lee
,
Dong-Wook Byun
,
Michael A. Schweitz
,
Sang-Mo Koo
.
essderc 2022
:
304-307
[doi]
Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement
C. Laguna
,
Mathieu Bernard
,
Julien Garrione
,
Niccolo Castellani
,
V. Meli
,
S. Martin
,
François Aussenac
,
D. Rouchon
,
N. Rochat
,
Emmanuel Nolot
,
Guillaume Bourgeois
,
Marie-Claire Cyrille
,
Liviu Militaru
,
A. Souifi
,
François Andrieu
,
Gabriele Navarro
.
essderc 2022
:
225-228
[doi]
TiTe/Ge2Sb2Te5Bi-layer-based Phase-Change Memory Targeting Storage Class Memory
Giusy Lama
,
Mathieu Bernard
,
Julien Garrione
,
Nicolas Bernier
,
Niccolo Castellani
,
Guillaume Bourgeois
,
Marie-Claire Cyrille
,
François Andrieu
,
Gabriele Navarro
.
essderc 2022
:
237-240
[doi]
Multi-level Operation of FeFETs Memristors: the Crucial Role of Three Dimensional Effects
Daniel Lizzit
,
Thomas Bernardi
,
David Esseni
.
essderc 2022
:
344-347
[doi]
In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications
F. Serra Di Santa Maria
,
Christoforos G. Theodorou
,
Francis Balestra
,
Gérard Ghibaudo
,
Eunjung Cha
,
Cezar B. Zota
.
essderc 2022
:
257-260
[doi]
Experimental fabrication of an ESF3 floating gate flash cell in an FD-SOI process
Nicki Mika
,
Thomas Melde
,
Stefan Dünkel
,
Michael Otto
,
Francois Weisbuch
,
Peter Krottenthaler
,
Thomas Mikolajick
.
essderc 2022
:
356-359
[doi]
MEMS optical microphone based on light phase modulation
Niccolo De Milleri
,
Güclü Onaran
,
Andreas Wiesbauer
,
Andrea Baschirotto
.
essderc 2022
:
289-292
[doi]
The Environmental Footprint of IC Production: Meta-Analysis and Historical Trends
Thibault Pirson
,
Thibault P. Delhaye
,
Alex Pip
,
Grégoire Le Brun
,
Jean-Pierre Raskin
,
David Bol
.
essderc 2022
:
352-355
[doi]
Novel Normally-Off AlGaN/GaN-on-Si MIS-HEMT Exploiting Nanoholes Gate Structure
Mamta Pradhan
,
Matthias Moser
,
Mohammed Alomari
,
Joachim N. Burghartz
,
Ingmar Kallfass
.
essderc 2022
:
400-403
[doi]
Quantum Computing Technology and Roadmap
Heike Riel
.
essderc 2022
:
25-30
[doi]
A self-sustaining Single Photon Avalanche Diode Model
Sven Rink
,
V. Quenette
,
Jean-Robert Manouvrier
,
Andre Juge
,
Gilles Gouget
,
Denis Rideau
,
R. A. Bianchi
,
Dominique Golanski
,
Bastien Mamdy
,
Jean-Baptiste Kammerer
,
Wilfried Uhring
,
Christophe Lallement
,
Sara Pellegrini
,
Megan Agnew
,
Bruce Rae
.
essderc 2022
:
281-284
[doi]
On the convergence of the recurrence solution of McIntyre's local and non-local avalanche triggering probability equations for SPAD compact models
Dorian Saint-Pierre
,
Raphaël Clerc
,
Rémi Helleboid
,
Denis Rideau
.
essderc 2022
:
277-280
[doi]
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions
Mattia Segatto
,
Marco Massarotto
,
Suzanne Lancaster
,
Quang T. Duong
,
A. Affanni
,
Riccardo Fontanini
,
Francesco Driussi
,
Daniel Lizzit
,
Thomas Mikolajick
,
Stefan Slesazeck
,
David Esseni
.
essderc 2022
:
340-343
[doi]
Trap Behavior of Metamorphic HEMTs with Pulsed IV and $1/f$ Noise Measurement
Ki-Yong Shin
,
Ju-Won Shin
,
Surajit Chakraborty
,
Walid Amir
,
Chan Soo Shin
,
Tae-Woo Kim
.
essderc 2022
:
324-327
[doi]
A Novel Approach to Modeling Insulator Wave-Function Penetration and Interface Roughness Scattering in MOSFETs
Zlatan Stanojevic
,
Lee-Chi Hung
,
Chen-Ming Tsai
,
Markus Karner
.
essderc 2022
:
273-276
[doi]
Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer on the Switching Properties of Bilayer TaOx/HfOx ReRAM
Tommaso Stecconi
,
Youri Popoff
,
Roberto Guido
,
Donato Francesco Falcone
,
Mattia Halter
,
Marilyne Sousa
,
Folkert Horst
,
Antonio La Porta
,
Bert J. Offrein
,
Valeria Bragaglia
.
essderc 2022
:
297-300
[doi]
Filament Localization and Characterization in Hf02 ReRAM Cells using Laser Stimulation
Franco Stellari
,
Ernest Y. Wu
,
Martin M. Frank
,
Leonidas E. Ocala
,
Takashi Ando
,
Peilin Song
.
essderc 2022
:
293-296
[doi]
Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits
Olga Syshchyk
,
Thibault Cosnier
,
Zheng-Hong Huang
,
Deepthi Cingu
,
Dirk Wellekens
,
Anurag Vohra
,
Karen Geens
,
Pavan Vudumula
,
Urmimala Chatterjee
,
Stefaan Decoutere
,
Tian-Li Wu
,
Benoit Bakeroot
.
essderc 2022
:
245-248
[doi]
Joint Modeling of Multi-Domain Ferroelectric and Distributed Channel towards Unveiling the Asymmetric Abrupt DC Current Jump in Ferroelectric FET
Simon Thomann
,
Kai Ni 0004
,
Hussam Amrouch
.
essderc 2022
:
336-339
[doi]
III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance
Abhitosh Vais
,
Sachin Yadav
,
Yves Mols
,
Bjorn Vermeersch
,
Komal Vondkar Kodandarama
,
Marina Baryshnikova
,
G. Mannaert
,
R. Alcotte
,
Geert Boccardi
,
Piet Wambacq
,
Bertrand Parvais
,
R. Langer
,
Bernardette Kunert
,
Nadine Collaert
.
essderc 2022
:
261-264
[doi]
Defects Motion as the Key Source of Random Telegraph Noise Instability in Hafnium Oxide
Sara Vecchi
,
Paolo Pavan
,
Francesco Maria Puglisi
.
essderc 2022
:
368-371
[doi]
SiC Power Device Mass Commercialization
V. Veliadis
.
essderc 2022
:
31-36
[doi]
Silicon-Impurity Defects in Calcium Fluoride: A First Principles Study
Dominic Waldhoer
,
Bibhas Manna
,
Al-Moatasem Bellah El-Sayed
,
Theresia Knobloch
,
Yury Illarionov
,
Tibor Grasser
.
essderc 2022
:
380-383
[doi]
Metastability of Negatively Charged Hydroxyl-E' Centers and their Potential Role in Positive Bias Temperature Instabilities
Christoph Wilhelmer
,
Dominic Waldhoer
,
Markus Jech
,
Al-Moatasem Bellah El-Sayed
,
Lukas Cvitkovich
,
Michael Waltl
,
Tibor Grasser
.
essderc 2022
:
376-379
[doi]
Self-consistent Automated Parameter Extraction of RRAM Physics-Based Compact Model
Tommaso Zanotti
,
Paolo Pavan
,
Francesco Maria Puglisi
.
essderc 2022
:
316-319
[doi]
2021
51st IEEE European Solid-State Device Research Conference, ESSDERC 2021, Grenoble, France, September 13-22, 2021
IEEE,
2021.
[doi]
High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor
Laura Bégon-Lours
,
Mattia Halter
,
Youri Popoff
,
Zhenming Yu
,
Donato Francesco Falcone
,
Bert Jan Offrein
.
essderc 2021
:
87-90
[doi]
Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface
L. Cvitkovich
,
Markus Jech
,
D. Waldhör
,
Al-Moatasem El-Sayed
,
C. Wilhelmer
,
Tibor Grasser
.
essderc 2021
:
235-238
[doi]
Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs
R. Kom Kammeugne
,
C. Leroux
,
Tadeu Mota Frutuoso
,
Jacques Cluzel
,
L. Vauche
,
Cyrille Le Royer
,
Romain Gwoziecki
,
Xavier Garros
,
Fred Gaillard
,
Matthew Charles
,
E. Bano
,
Gérard Ghibaudo
.
essderc 2021
:
299-302
[doi]
The essential contribution of CMOS imaging technologies to Earth Observation applications
Pierre Magnan
.
essderc 2021
:
35-42
[doi]
Wafer-scale fabrication of biologically sensitive Si nanowire FET: from pH sensing to electrical detection of DNA hybridization
R. Midahuen
,
Bernard Previtali
,
C. Fontelaye
,
G. Nonglaton
,
V. Stambouli
,
Sylvain Barraud
.
essderc 2021
:
175-178
[doi]
Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide
Diego Milardovich
,
Markus Jech
,
Dominic Waldhoer
,
Al-Moatasem Bellah El-Sayed
,
Tibor Grasser
.
essderc 2021
:
239-242
[doi]
Scaling ferroelectric HZO thickness for low power Ge MFS-FTJ memories
Nikitas Siannas
,
Christina Zacharaki
,
Polychronis Tsipas
,
Stefanos Chaitoglou
,
Laura Bégon-Lours
,
Athanasios Dimoulas
.
essderc 2021
:
287-290
[doi]
VERILOR: A Verilog-A Model of Lorentzian Spectra for Simulating Trap-related Noise in CMOS Circuits
Angeliki Tataridou
,
Gérard Ghibaudo
,
Christoforos G. Theodorou
.
essderc 2021
:
247-250
[doi]
Compact Modelling of 22nm FDSOI CMOS Semiconductor Quantum Dot Cryogenic I-V Characteristics
S. Pati Tripathi
,
S. Bonen
,
C. Nastase
,
S. Iordanescu
,
G. Boldeiu
,
M. Pasteanu
,
A. Müller
,
S. P. Voinigescu
.
essderc 2021
:
43-46
[doi]
Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network
Christoph Wilhelmer
,
Markus Jech
,
Dominic Waldhoer
,
Al-Moatasem Bellah El-Sayed
,
Lukas Cvitkovich
,
Tibor Grasser
.
essderc 2021
:
243-246
[doi]
Improvement on Ge/GeOx/Tm2O3/HfO2 Gate Performance by Forming Gas Anneal
Laura Zurauskaite
,
Mikael Östling
,
Per-Erik Hellström
.
essderc 2021
:
227-230
[doi]
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