675 | -- | 0 | Tamotsu Hashizume. Foreword |
676 | -- | 680 | Sang-Hyeon Lee, Moonkyung Kim, Byung-ki Cheong, Jooyeon Kim, Jo-Won Lee, Sandip Tiwari. A Single Element Phase Change Memory |
681 | -- | 685 | Gil Sung Lee, Doo-Hyun Kim, Seongjae Cho, Byung-Gook Park. A New 1T DRAM Cell: Cone Type 1T DRAM Cell |
686 | -- | 692 | Moon-Sik Seo, Tetsuo Endoh. The Optimum Physical Targets of the 3-Dimensional Vertical FG NAND Flash Memory Cell Arrays with the Extended Sidewall Control Gate (ESCG) Structure |
693 | -- | 698 | Akira Otake, Keita Yamaguchi, Katsumasa Kamiya, Yasuteru Shigeta, Kenji Shiraishi. An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory |
699 | -- | 704 | Guobin Wei, Yuta Goto, Akio Ohta, Katsunori Makihara, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki. Impact of Annealing Ambience on Resistive Switching in Pt/TiO::2::/Pt Structure |
705 | -- | 711 | Yuto Norifusa, Tetsuo Endoh. Impact of Floating Body Type DRAM with the Vertical MOSFET |
712 | -- | 716 | Jungwoo Oh, Jeff Huang, Injo Ok, Se-Hoon Lee, Paul D. Kirsch, Raj Jammy, Hi-Deok Lee. High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility |
717 | -- | 723 | Akio Ohta, Daisuke Kanme, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki. Characterization of Mg Diffusion into HfO::2::/SiO::2::/Si(100) Stacked Structures and Its Impact on Detect State Densities |
724 | -- | 729 | Takuya Imamoto, Takeshi Sasaki, Tetsuo Endoh. Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET with 65 nm CMOS Process |
730 | -- | 736 | Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Yasuteru Shigeta, Tetsuo Endoh. Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor |
737 | -- | 742 | Masakazu Muraguchi, Tetsuo Endoh. Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET |
743 | -- | 750 | Tetsuo Endoh, Masashi Kamiyanagi, Masakazu Muraguchi, Takuya Imamoto, Takeshi Sasaki. The Impact of Current Controlled-MOS Current Mode Logic/Magnetic Tunnel Junction Hybrid Circuit for Stable and High-Speed Operation |
751 | -- | 759 | Takeshi Sasaki, Takuya Imamoto, Tetsuo Endoh. Temperature Dependency of Driving Current in High-k/Metal Gate MOSFET and Its Influence on CMOS Inverter Circuit |
760 | -- | 766 | Masashi Kamiyanagi, Takuya Imamoto, Takeshi Sasaki, Hyoungjun Na, Tetsuo Endoh. Verification of Stable Circuit Operation of 180 nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation |
767 | -- | 770 | Young-Uk Song, Hiroshi Ishiwara, Shun'ichiro Ohmi. Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer |
771 | -- | 774 | Seung-Bin Baek, Dae-Hee Kim, Yeong Cheol Kim. Interaction of ::::Bis::::-diethylaminosilane with a Hydroxylized Si (001) Surface for SiO::2:: Thin-Film Growth Using Density Functional Theory |
775 | -- | 779 | Jun Gao, Jumpei Ishikawa, Shun ichiro Ohmi. Modulation of PtSi Work Function by Alloying with Low Work Function Metal |
780 | -- | 785 | Won-Young Jung, Jong-Min Kim, Jin-Soo Kim, Taek-Soo Kim. A Precision Floating-Gate Mismatch Measurement Technique for Analog Application |
786 | -- | 790 | Young-Su Kim, Min Ho Kang, Kang Suk Jeong, Jae Sub Oh, Yu Mi Kim, Dong Eun Yoo, Hi-Deok Lee, Ga-won Lee. Dual-Gate ZnO Thin-Film Transistors with SiNx as Dielectric Layer |
791 | -- | 795 | Chun-Hyung Cho, Ho-Young Cha. Errors in Pi-Coefficients Due to the Strain Effects in Resistor Stress Sensor on (001) Silicon |
796 | -- | 801 | Jae Young Park, Dae-Woo Kim, Young-Sang Son, Jong-Kyu Song, Chang-Soo Jang, Won-Young Jung. A Non-snapback ESD Protection Clamp Circuit Using Isolated Parasitic Capacitance in a 0.35 µm Bipolar-CMOS-DMOS Process |
802 | -- | 806 | Ryoto Yaguchi, Fumiyuki Adachi, Takao Waho. A Dynamic Source-Follower Integrator and Its Application to ΔΣ Modulators |
807 | -- | 813 | Sungjin Kim, Hyunchul Kim, Dong-hyun Kim, Sanggeun Jeon, Yeocho Yoon, Jae-Sung Rieh. A V-Band Common-Source Low Noise Amplifier in a 0.13 µm RF CMOS Technology and the Effect of Dummy Fills |
814 | -- | 819 | Masatake Hangai, Kazuhiko Nakahara, Mamiko Yamaguchi, Morishige Hieda. High-Power Protection Switch Using Stub/Line Selectable Circuits |
820 | -- | 825 | Nobuhiko Tanaka, Mitsufumi Saito, Michihiko Suhara. Analysis of Low Loss and Wideband Characteristics for Lumped Element Isolators Implemented by Using Tunnel Diodes |
826 | -- | 829 | Jongseung Hwang, Heetae Kim, Jae-Hyun Lee, Dongmok Whang, SungWoo Hwang. Deoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors |
830 | -- | 834 | Naoaki Takebe, Takashi Kobayashi, Hiroyuki Suzuki, Yasuyuki Miyamoto, Kazuhito Furuya. Fabrication of InP/InGaAs DHBTs with Buried SiO::2:: Wires |
835 | -- | 841 | Sanna Taking, Douglas Macfarlane, Ali Z. Khokhar, Amir M. Dabiran, Edward Wasige. DC and RF Performance of AlN/GaN MOS-HEMTs |
842 | -- | 845 | Jae-Gil Lee, Chun-Hyung Cho, Ho-Young Cha. Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors |
846 | -- | 849 | Hoon-Ki Lee, S. V. Jagadeesh Chandra, Kyu-Hwan Shim, Jong Won Yoon, Chel-Jong Choi. Electrical and Structural Properties of Metal-Oxide-Semiconductor (MOS) Devices with Pt/Ta::2::O::5:: Gate Stacks |
850 | -- | 853 | Jong-Dae Lee, Hyun-Min Seung, Kyoung-Cheol Kwon, Jea-Gun Park. Dependence of Ag Film Thickness on Ag Nanocrystals Formation to Fabricate Polymer Nonvolatile Memory |
854 | -- | 857 | Jongsun Kim, Gyungsu Byun, M. Frank Chang. A Low-Overhead and Low-Power RF Transceiver for Short-Distance On- and Off-Chip Interconnects |
858 | -- | 861 | Bongsub Song, Dohyung Kim, Kwangsoo Kim, Jinwook Burm. A Sub-Harmonic RF Transmitter Architecture with Simultaneous Power Combination and LO Leakage Cancellation |
862 | -- | 864 | Zhigang Zang, Keisuke Mukai, Paolo Navaretti, Marcus Duelk, Christian Velez, Kiichi Hamamoto. High Power and Stable High Coupling Efficiency (66 ) Superluminescent Light Emitting Diodes by Using Active Multi-Mode Interferometer |
865 | -- | 873 | Norimasa Nakashima, Mitsuo Tateiba. A Comparative Study on Iterative Progressive Numerical Methods for Boundary Element Analysis of Electromagnetic Multiple Scattering |
874 | -- | 881 | Koichi Hirayama, Yasuhide Tsuji, Shintaro Yamasaki, Shinji Nishiwaki. Design Optimization of H-Plane Waveguide Component by Level Set Method |
882 | -- | 889 | Chih-Hao Lu, Ching-Wen Hsue, Bin-Chang Chieu, Hsiu-Wei Liu. Design of Broadband Amplifier Embedded with Band-Pass Filter Using Discrete-Time Technique |
890 | -- | 895 | Kenji Suzuki, Mamoru Ugajin, Mitsuru Harada. A 5th-Order SC Complex BPF Using Series Capacitances for Low-IF Narrowband Wireless Receivers |
896 | -- | 904 | Jonghee Hwang, Yongwoo Choi, Yoonsik Choe. Frame Rate Up-Conversion Technique Using Hardware-Efficient Motion Estimator Architecture for Motion Blur Reduction of TFT-LCD |
905 | -- | 908 | Kyoung-Pyo Ahn, Ryo Ishikawa, Kazuhiko Honjo. UWB Active Balun Design with Small Group Delay Variation and Improved Return Loss |
909 | -- | 912 | Sung-Sun Choi, Han-Yeol Yu, Yong Hoon Kim. 24 GHz CMOS Frequency Source with Differential Colpitts Structure-Based Complementary VCO for Low Phase Noise |
913 | -- | 916 | Jinn-Shyan Wang, Yu-Juey Chang, Chingwei Yeh. Design of High-Performance CMOS Level Converters Considering PVT Variations |
917 | -- | 919 | Jaejun Lee, Sungho Lee, Sangwook Nam. On-Chip Supply Noise Suppression Technique Using Active Inductor |