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Viewing Publication 1 - 100 from 1201

2023

RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applicationsP. Srinivasan 0002, J. Lestage, Shafi Syed, X. Hui, Stephen Moss, Oscar D. Restrepo, Oscar H. Gonzalez, Y. Chen, T. McKay, Anirban Bandyopadhyay, Ned Cahoon, Fernando Guarin, Byoung Min, Martin Gall, S. Ludvik. irps 2023: 1-6 [doi]

IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023IEEE, 2023. [doi]

Differentiated Silicon Technologies for mmwave 5G and 6G applications (Invited)Anirban Bandyopadhyay. irps 2023: 1-4 [doi]

MTJ degradation in multi-pillar SOT-MRAM with selective writingSimon Van Beek, Kaiming Cai, Kaiquan Fan, Giacomo Talmelli, Anna Trovato, Nico Jossart, Siddharth Rao, Adrian Vaisman Chasin, Sebastien Couet. irps 2023: 1-7 [doi]

The Correct Hot Carrier Degradation ModelJoseph B. Bernstein, Emmanuel Bender, Alain Bensoussan 0002. irps 2023: 1-5 [doi]

Innovative reliability solution for WLCSP packagesKlodjan Bidaj, Lauriane Gateka, Benjamin Ardaillon. irps 2023: 1-4 [doi]

Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of VariabilityChristian Bogner, Christian Schlünder, Michael Waltl, Hans Reisinger, Tibor Grasser. irps 2023: 1-7 [doi]

Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw DislocationsEdward Van Brunt, Daniel J. Lichtenwalner, J. H. Park, Satyaki Ganguly, J. W. McPherson. irps 2023: 1-4 [doi]

Electrostatic Shielding of NAND Flash Memory from Ionizing RadiationMatchima Buddhanoy, Biswajit Ray. irps 2023: 1-5 [doi]

Reliability challenges in Forksheet Devices: (Invited Paper)Erik Bury, Michiel Vandemaele, Jacopo Franco, Adrian Chasin, Stanislav Tyaginov, A. Vandooren, Romain Ritzenthaler, Hans Mertens, Javier Diaz-Fortuny, N. Horiguchi, Dimitri Linten, Ben Kaczer. irps 2023: 1-8 [doi]

Carrot-like crystalline defects on the 4H-SiC powerMOSFET yield and reliabilityBeatrice Carbone, Mario Santo Alessandrino, Alfio Russo, Elisa Vitanza, Filippo Giannazzo, Patrick Fiorenza, Fabrizio Roccaforte. irps 2023: 1-5 [doi]

A New Ramp Stress Reliability Assessment on Pulse Energy Based OTS Switching OperationP. C. Chang, P. J. Liao, C. H. Wu, Y. C. Chang, D. H. Hou, Elia Ambrosi, H. Y. Lee, J. H. Lee, X. Y. Bao. irps 2023: 1-5 [doi]

V-Ramp test and gate oxide screening under the "lucky" defect modelKin P. Cheung. irps 2023: 1-4 [doi]

A Novel Data Recovery Technique for 3D TLC NAND Flash Memory Using Intercell ProgramY. L. Chou, W. J. Tsai, G. W. Wu, W. Chang, T. C. Lu, K.-C. Chen, C. Y. Lu. irps 2023: 1-4 [doi]

Evidence of Carbon Doping Effect on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTsMarcello Cioni, G. Giorgino, Alessandro Chini, Carmine Miccoli, Maria Eloisa Castagna, M. Moschetti, C. Tringali, Ferdinando Iucolano. irps 2023: 1-5 [doi]

Improving the Tamper-Aware Odometer Concept by Enhancing Dynamic Stress OperationJavier Diaz-Fortuny, Dishant Sangani, Pablo Saraza-Canflanca, Erik Bury, Robin Degraeve, Ben Kaczer. irps 2023: 1-9 [doi]

Thermomigration-induced void formation in Cu-interconnects - Assessment of main physical parametersYouqi Ding, O. Varela Pedreira, Melina Lofrano, Houman Zahedmanesh, T. Chavez, Hosain Farr, Ingrid De Wolf, Kris Croes. irps 2023: 1-7 [doi]

Insight Into HCI Reliability on I/O Nitrided DevicesC. Doyen, V. Yon, Xavier Garros, Luigi Basset, Tadeu Mota Frutuoso, C. Dagon, Cheikh Diouf, X. Federspiel, V. Millon, Frederic Monsieur, C. Pribat, David Roy 0001. irps 2023: 1-5 [doi]

Wafer Level Chip Scale Package Failure Mode Prediction using Finite Element ModelingViktor Dudash, Kashi Vishwanath Machani, Bjoern Boehme, Simone Capecchi, Jungtae Ok, Karsten Meier, Frank Kuechenmeister, Marcel Wieland, Karlheinz Bock. irps 2023: 1-6 [doi]

High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor TrapsDavide Favero, A. Cavaliere, Carlo De Santi, Matteo Borga, W. Gonçalez Filho, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini. irps 2023: 1-6 [doi]

Effect of Frequency on Reliability Of High-K MIM CapacitorsX. Federspiel, A. Griffon, M. Barlas, P. Lamontagne. irps 2023: 1-6 [doi]

Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETsMaximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser. irps 2023: 1-10 [doi]

Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETsPatrick Fiorenza, Francesco Cordiano, Mario Santo Alessandrino, Alfio Russo, Edoardo Zanetti, Mario Saggio, C. Bongiorno, Filippo Giannazzo, Fabrizio Roccaforte. irps 2023: 1-4 [doi]

Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniquesManuel Fregolent, Alberto Marcuzzi, Carlo De Santi, Eldad Bahat-Treidel, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini. irps 2023: 1-5 [doi]

Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applicationsTidjani Garba-Seybou, Xavier Federspiel, Frederic Monsieur, Mathieu Sicre, Florian Cacho, Joycelyn Hai, Alain Bravaix. irps 2023: 1-8 [doi]

Depassivation of Traps in the Polysilicon Channel of 3D NAND Flash Arrays: Impact on Cell High-Temperature Data RetentionMattia Giulianini, Gerardo Malavena, Luca Chiavarone, Alessandro S. Spinelli, Christian Monzio Compagnoni. irps 2023: 1-6 [doi]

Reliability of 3D NAND Flash for Future Storage Systems (Invited)Akira Goda, Kishore Kumar Muchherla, Peter Feeley. irps 2023: 1-10 [doi]

Dynamic On-State Resistance in SiC MOSFETsR. Green, A. Lelis, D. Urciuoli, E. Schroen, D. Habersat. irps 2023: 1-2 [doi]

Reliability Characterization of HBM featuring $\text{HK}+\text{MG}$ Logic Chip with Multi-stacked DRAMsSungmock Ha, S. Lee, G. H. Bae, D.-S. Lee, S. H. Kim, B. W. Woo, N. H. Lee, Y. S. Lee, S. Pae. irps 2023: 1-7 [doi]

Integrated Test Circuit for Off-State Dynamic Drain Stress EvaluationJ. Hai, Florian Cacho, X. Federspiel, Tidjani Garba-Seybou, A. Divay, Estelle Lauga-Larroze, Jean-Daniel Arnould. irps 2023: 1-6 [doi]

Cryogenic Endurance of Anti-ferroelectric and Ferroelectric $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{X}}\mathrm{O}_{2}$ for Quantum Computing ApplicationsK.-Y. Hsiang, J. Y. Lee, Z.-F. Lou, F. S. Chang, Z. X. Li, C. W. Liu, T.-H. Hou, P. Su, M. H. Lee. irps 2023: 1-4 [doi]

Reliability Studies on Advanced FinFET Transistors of the Intel 4 CMOS TechnologyM. Jamil, S. Mukhopadhay, M. Ghoneim, A. Shailos, Chetan Prasad, Inanc Meric, Stephen Ramey. irps 2023: 1-5 [doi]

Multi-finger turn-on: A potential cause of premature failure in Drain Extended HV Nanosheet DevicesJatin, M. Monishmurali, Mayank Shrivastava. irps 2023: 1-4 [doi]

Risk Management Informed by an Uncertain Bathtub Curve (Invited)Jason Jopling. irps 2023: 1-8 [doi]

A detailed comparison of various off-state breakdown methodologies for scaled Tri-gate technologiesK. Joshi, D. Nminibapiel, M. Ghoneim, D. Ali, R. Ramamurthy, L. Pantisano, Inanc Meric, Stephen Ramey. irps 2023: 1-6 [doi]

Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN BufferVipin Joshi, Sayak Dutta Gupta, Rajarshi Roy Chaudhuri, Mayank Shrivastava. irps 2023: 1-4 [doi]

Reliability Modeling of Middle-Of-Line Interconnect Dielectrics in Advanced process nodesRahim Kasim, Cheyun Lin, Christopher Perini, James Palmer, N. Gilda, S. Imam, Justin R. Weber, C. Wallace, Jeffery Hicks. irps 2023: 1-8 [doi]

Investigation of Safe Operating Area on 4H-SiC 600V VDMOSFET with TLP and UIS Test MethodsChao-Yang Ke, Yu-Chia Tsui, Bing-Yue Tsui, Ming-Dou Ker. irps 2023: 1-4 [doi]

Extended Analysis of Power Cycling Behavior of TO-Packaged SiC Power MOSFETsIvana Kovacevic-Badstuebner, Salvatore Race, Ulrike Grossner, Elena Mengotti, Christoph Kenel, Enea Bianda, Joni P. A. Jormanainen. irps 2023: 1-6 [doi]

Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETsAkhil S. Kumar, Michael J. Uren, Matthew D. Smith 0003, Martin Kuball, Justin Parke, H. George Henry, Robert S. Howell. irps 2023: 1-4 [doi]

Atomic-level Insight and Quantum Chemistry of Ambient Reliability Issues of the TMDs DevicesJeevesh Kumar, Hemanjaneyulu Kuruva, Harsha B. Variar, Utpreksh Patbhaje, Mayank Shrivastava. irps 2023: 1-6 [doi]

Estimation of SOH Degradation of Coin Cells Subjected to Accelerated Life Cycling with Randomized Cycling Depths and C-RatesPradeep Lall, Ved Soni, Guneet Sethi, Kok Yiang. irps 2023: 1-10 [doi]

Reliability Improvement with Optimized BEOL Process in Advanced DRAMJ. H. Lee, B. W. Woo, Y. M. Lee, N. H. Lee, S.-H. Lee, Y. S. Lee, H. S. Kim, S. Pae. irps 2023: 1-4 [doi]

Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTsCamille Leurquin, William Vandendaele, Romain Gwoziecki, B. Mohamad, G. Despesse, Ferdinando Iucolano, Roberto Modica, A. Constant. irps 2023: 1-6 [doi]

8 Endurance and Excellent RetentionM. Y. Li, J. P. Lee, C.-H. Liu, J.-C. Guo, Steve S. Chung. irps 2023: 1-7 [doi]

Impact of Trapped Charge Vertical Loss and Lateral Migration on Lifetime Estimation of 3-D NAND Flash MemoriesY. H. Liu, T. C. Zhan, Y.-S. Yang, C. C. Hsu, A.-C. Liu, W. Lin. irps 2023: 1-6 [doi]

GaN HEMTs Design and Modeling for 5GYueying Liu, John Wood, Zongyang Hu, Satyaki Ganguly, Jeremy Fisher, Mike Watts, Scott T. Sheppard, Donald A. Gajewski, Basim Noori. irps 2023: 1-4 [doi]

Towards accurate temperature prediction in BEOL for reliability assessment (Invited)Melina Lofrano, Herman Oprins, Xinyue Chang, Bjorn Vermeersch, Olalla Varela Pedreira, Alicja Lesniewska, Vladimir Cherman, Ivan Ciofi, Kristof Croes, Seongho Park, Zsolt Tokei. irps 2023: 1-7 [doi]

Signatures of Positive Gate Over-Drive Induced Hole Trap Generation and its Impact on p-GaN Gate Stack Instability in AlGaN/GaN HEMTsRasik Rashid Malik, Vipin Joshi, Rajarshi Roy Chaudhuri, Mehak Ashraf Mir, Zubear Khan, Avinas N. Shaji, Madhura Bhattacharya, Anup T. Vitthal, Mayank Shrivastava. irps 2023: 1-4 [doi]

Transient Leakage Current as a Non-destructive Probe of Wire-bond Electrochemical FailuresMd. Asaduz Zaman Mamun, Amar Mavinkurve, Michiel van Soestbergen, Muhammad Ashraful Alam. irps 2023: 1-7 [doi]

Experimental Study of Self-Heating Effect in InGaAs HEMTs for Quantum Technologies Down to 10KF. Serra Di Santa Maria, Francis Balestra, Christoforos G. Theodorou, Gérard Ghibaudo, Cezar B. Zota, Eunjung Cha. irps 2023: 1-4 [doi]

Challenges and solutions to the defect-centric modeling and circuit simulation of time-dependent variabilityJavier Martín-Martínez, Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Rosana Rodríguez, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández 0001, Montserrat Nafría. irps 2023: 1-9 [doi]

Nickel Silicide Electromigration on Micro Ring Modulators for Silicon Photonics TechnologyBrian T. McGowan, Michal Rakowski, Seungman Choi. irps 2023: 1-8 [doi]

Advanced Methods of Detecting Physical Damages in Packaging and BEOL InterconnectsJorge Mendoza, Jimmy-Bao Le, Choong-Un Kim, Hung-Yun Lin. irps 2023: 1-6 [doi]

Industrial approach to the chip and package reliability of SiC MOSFETs (Invited)Elena Mengotti, Enea Bianda, David Baumann, Gerd Schlottig, Francisco Canales. irps 2023: 1-6 [doi]

Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTsMehak Ashraf Mir, Vipin Joshi, Rajarshi Roy Chaudhuri, Mohammad Ateeb Munshi, Rasik Rashid Malik, Mayank Shrivastava. irps 2023: 1-6 [doi]

The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case StudyPeter Moens, F. Geenen, L. De Schepper, JF Cano, J. Lettens, S. Maslougkas, J. Franchi, Martin Domeij. irps 2023: 1-5 [doi]

Impact of Thin-oxide Gate on the On-Resistance of HV-PNP Under ESD StressM. Monishmurali, Nagothu Karmel Kranthi, Gianluca Boselli, Mayank Shrivastava. irps 2023: 1-5 [doi]

A Unified Aging Model Framework Capturing Device to Circuit Degradation for Advance Technology NodesS. Mukhopadhyay, C. Chen, M. Jamil, Jihan Standfest, Inanc Meric, Balkaran Gill, Stephen Ramey. irps 2023: 1-4 [doi]

Classification of Commercial SiC-MOSFETs Based on Time-Dependent Gate-current CharacteristicsE. Murakami, T. Takeshita, K. Oda, M. Kobayashi, K. Asayama, M. Okamoto. irps 2023: 1-7 [doi]

Scaling Trends and the Effect of Process Variations on the Soft Error Rate of advanced FinFET SRAMsBalaji Narasimham, H. Luk, C. Paone, A-R. Montoya, T. Riehle, Mike Smith, Liming Tsau. irps 2023: 1-4 [doi]

Cross-coupled Self-Heating and Consequent Reliability Issues in GaN-Si Hetero-integration: Thermal Keep-Out-Zone QuantifiedSruthi M. P, Md. Asaduz Zaman Mamun, Deleep R. Nair, Anjan Chakravorty, Nandita DasGupta, Amitava Dasgupta, Muhammad Ashraful Alam. irps 2023: 1-6 [doi]

Towards a Universal Model of Dielectric BreakdownAndrea Padovani, Paolo La Torraca, Jack Strand, Alexander L. Shluger, Valerio Milo, Luca Larcher. irps 2023: 1-8 [doi]

Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETsL. Panarella, Ben Kaczer, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, Dennis Lin, Stanislav Tyaginov, I. Asselberghs, Cesar J. Lockhart de la Rosa, Gouri Sankar Kar, Valeri Afanas'ev. irps 2023: 1-6 [doi]

A Physical Unclonable Function Leveraging Hot Carrier Injection AgingRachael J. Parker, Jyothi Bhaskarr Velamala, Kuan-Yueh James Shen, David Johnston, Yao-Feng Chang, Stephen M. Ramey, Siang-jhih Sean Wu, Padma Penmatsa. irps 2023: 1-5 [doi]

Unveiling Field Driven Performance Unreliabilities Governed by Channel Dynamics in MoSe2 FETsUtpreksh Patbhaje, Rupali Verma, Jeevesh Kumar, Ansh, Mayank Shrivastava. irps 2023: 1-6 [doi]

Insights into device and material origins and physical mechanisms behind cross temperature in 3D NANDMilan Pesic, Bastien Beltrando, Tommaso Rollo, Cristian Zambelli, Andrea Padovani, Rino Micheloni, Rita Maji, Lisa Enman, Mark Saly, Yang Ho Bae, Jung-Bae Kim, Dong Kil Yim, Luca Larcher. irps 2023: 1-8 [doi]

Effects of Collected Charge and Drain Area on SE Response of SRAMs at the 5-nm FinFET NodeN. J. Pieper, Yoni Xiong, Dennis R. Ball, J. Pasternak, Bharat L. Bhuva. irps 2023: 1-6 [doi]

Circuit Reliability of $\text{MoS}_{2}$ Channel Based 2D TransistorsAnand Kumar Rai, Harsha B. Variar, Mayank Shrivastava. irps 2023: 1-4 [doi]

Reliability of SPST Series-stacked SOI CMOS RF Switches for mmWave ApplicationsAarti Rathi, Abhisek Dixit, Naga Satish, P. Srinivasan 0002, Fernando Guarin. irps 2023: 1-6 [doi]

Self-Heating Aware Threshold Voltage Modulation Conforming to Process and Ambient Temperature Variation for Reliable Nanosheet FETSunil Rathore, Rajeewa Kumar Jaisawal, P. N. Kondekar, Navneet Gandhi, Shashank Banchhor, Young Suh Song, Navjeet Bagga. irps 2023: 1-5 [doi]

Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applicationsN. Said, Kathia Harrouche, Farid Medjdoub, Nathalie Labat, Jean-Guy Tartarin, Nathalie Malbert. irps 2023: 1-5 [doi]

A Physics-based Model for Long Term Data Retention Characteristics in 3D NAND Flash MemoryRashmi Saikia, Aseer Ansari, Souvik Mahapatra. irps 2023: 1-6 [doi]

Impact of via geometry and line extension on via-electromigration in nano-interconnectsA. S. Saleh, Houman Zahedmanesh, Hajdin Ceric, Ingrid De Wolf, Kris Croes. irps 2023: 1-4 [doi]

Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technologyPablo Saraza-Canflanca, Javier Diaz-Fortuny, Andrea Vici, Erik Bury, Robin Degraeve, Ben Kaczer. irps 2023: 1-6 [doi]

ESD Avalanche Diodes Degradation in EOS RegimeHossein Sarbishaei, Vladislav A. Vashchenko. irps 2023: 1-4 [doi]

Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-VHarumi Seki, Reika Ichihara, Yusuke Higashi, Yasushi Nakasaki, Masumi Saitoh, Masamichi Suzuki. irps 2023: 1-7 [doi]

Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETsLimeng Shi, Shengnan Zhu, Jiashu Qian, Michael Jin, Monikuntala Bhattacharya, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori, Tianshi Liu. irps 2023: 1-7 [doi]

Characterization and modeling of DCR and DCR drift variability in SPADsMathieu Sicre, X. Federspiel, Bastien Mamdy, David Roy 0001, Francis Calmon. irps 2023: 1-5 [doi]

Material instabilities in the TaOx-based resistive switching devices (Invited)Marek Skowronski. irps 2023: 1-5 [doi]

Soft- and Hard-Error Radiation Reliability of 228 KB $3\mathrm{T}+1\mathrm{C}$ Oxide Semiconductor MemoryH. Takahashi, Y. Okamoto, Toshiki Hamada, Y. Komura, S. Watanabe, K. Tsuda, H. Sawai, Takanori Matsuzaki, Yoshinori Ando, Tatsuya Onuki, H. Kunitake, Shunpei Yamazaki, D. Kobayashi, A. Ikuta, Takahiro Makino, Takeshi Ohshima. irps 2023: 1-6 [doi]

A New Methodology to Precisely Induce Wake-Up for Reliability Assessment of Ferroelectric DevicesTiang Teck Tan, Yu-Yun Wang, Joel Tan, Tian-Li Wu, Nagarajan Raghavan, Kin Leong Pey. irps 2023: 1-7 [doi]

Backhopping-based STT-MRAM Poisson Spiking Neuron for Neuromorphic ComputationJ. Tan, J.-H. Lim, Jae-Hyun Kwon, Vinayak Bharat Naik, Nagarajan Raghavan, Kin Leong Pey. irps 2023: 1-6 [doi]

Impact of Design and Process on Alpha-Induced SER in 4 nm Bulk-FinFET SRAMTaiki Uemura, Byungjin Chung, Shin-Young Chung, Seungbae Lee, Yuchul Hwang, Sangwoo Pae. irps 2023: 1-8 [doi]

Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited PaperMichiel Vandemaele, Ben Kaczer, Erik Bury, Jacopo Franco, Adrian Chasin, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken. irps 2023: 1-10 [doi]

Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited)William Vandendaele, Camille Leurquin, R. Lavieville, Marie-Anne Jaud, Abygaël Viey, Romain Gwoziecki, B. Mohamad, E. Nowak, A. Constant, Ferdinando Iucolano. irps 2023: 1-8 [doi]

Voltage Acceleration of Power NLDMOS Hot Carrier DegradationVladislav A. Vashchenko, H. Sarbishaei. irps 2023: 1-4 [doi]

OFF State Reliability Challenges of Monolayer WS2 FET Photodetector: Impact on the Dark and Photo-Illuminated StateRupali Verma, Utpreksh Patbhaje, Jeevesh Kumar, Anand Kumar Rai, Mayank Shrivastava. irps 2023: 1-5 [doi]

Analysis of TDDB lifetime projection in low thermal budget HfO2/SiO2 stacks for sequential 3D integrationsAndrea Vici, Robin Degraeve, Philippe J. Roussel, Jacopo Franco, Ben Kaczer, Ingrid De Wolf. irps 2023: 1-7 [doi]

Reliability of InGaZnO Transparent ReRAM with Optically Active Pt-NanodisksKavita Vishwakarma, Rishabh Kishore, Suman Gora, Mandeep Jangra, Arnab Datta. irps 2023: 1-4 [doi]

Backside Failure Analysis of IGBT power devices assembled in STPAKElisa Vitanza, C. Realmuto, M. La Marca, L. Torrisi. irps 2023: 1-4 [doi]

Demonstration on Warpage Estimation Approach Utilized in Fan-Out Panel-Level Packaging Enabled by Multi-Scale Process-Oriented SimulationChi-Wei Wang, Che-Pei Chang, Chang-Chun Lee. irps 2023: 1-4 [doi]

A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit testsD. Wieland, S. Ofner, M. Stabentheiner, B. Butej, Christian Koller, J. Sun, Andrea Minetto, K. Reiser, Oliver Häberlen, Michael Nelhiebel, Michael Glavanovics, Dionyz Pogany, Clemens Ostermaier. irps 2023: 1-6 [doi]

Write-error-rate of Spin-Transfer-Torque MRAM (Invited)Daniel C. Worledge. irps 2023: 1-4 [doi]

Soft Error Rate Predictions for Terrestrial Neutrons at the 3-nm Bulk FinFET TechnologyYoni Xiong, Yueh Chiang, Nicholas J. Pieper, Dennis R. Ball, Bharat L. Bhuva. irps 2023: 1-6 [doi]

A pragmatic network-aware paradigm for system-level electromigration predictions at scaleHouman Zahedmanesh, Philippe Roussel, Ivan Ciofi, Kristof Croes. irps 2023: 1-6 [doi]

Investigation of Channel Dimension Dependence of BTI Degradation and Variation in Planar HKMG MOSFETS. Q. Zhang, Y. S. Sun, D. Gao, H. Jiang, Z. Q. Yu, H. Zheng, J.-L. Huang. irps 2023: 1-4 [doi]

Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETsShengnan Zhu, Limeng Shi, Michael Jin, Jiashu Qian, Monikuntala Bhattacharya, Hema Lata Rao Maddi, Marvin H. White, Anant K. Agarwal, Tianshi Liu, Atsushi Shimbori, Chingchi Chen. irps 2023: 1-5 [doi]

TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD ProtectionLaura Zunarelli, Luigi Balestra, Susanna Reggiani, Raj Sankaralingam, Mariano Dissegna, Gianluca Boselli. irps 2023: 1-6 [doi]

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