| 873 | -- | 0 | Takatomo Enoki. Special Section on Heterostructure Microelectronics with TWHM2005 |
| 874 | -- | 882 | Hideki Hasegawa, Seiya Kasai, Taketomo Sato, Tamotsu Hashizume. Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress |
| 883 | -- | 890 | Jean Godin, Agnieszka Konczykowska, Muriel Riet, Jacques Moulu, Philippe Berdaguer, Filipe Jorge. InP DHBT Integrated Circuits for Fiber-Optic High-Speed Applications |
| 891 | -- | 897 | Jan V. Grahn, Piotr Starski, Jan Stake, T. Sergey Cherednichenko. Novel Devices for (Sub)millimeter-Wave Space Applications |
| 898 | -- | 905 | Youngwoo Kwon, Sanghyo Lee. RF MEMS - Enabling Technology for Millimeter-Waves |
| 906 | -- | 912 | . Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy |
| 913 | -- | 920 | Arvydas Matulionis. Hot-Electron Transport and Noise in GaN Two-Dimensional Channels for HEMTs |
| 921 | -- | 925 | Mathieu Stoffel, Jing Zhang, Oliver G. Schmidt. Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si::0.7::Ge::0.3:: Virtual Substrates |
| 926 | -- | 930 | Wojciech Knap, Jerzy Lusakowski, Frederic Teppe, Nina Dyakonova, Abdelouahad El Fatimy. Terahertz Emission and Detection by Plasma Waves in Nanometer Size Field Effect Transistors |
| 931 | -- | 936 | Rachid Driad, Robert E. Makon, Karl Schneider, Ulrich Nowotny, Rolf Aidam, Rüdiger Quay, Michael Schlechtweg, Michael Mikulla, Günter Weimann. InP DHBT Based IC Technology for over 80 Gbit/s Data Communications |
| 937 | -- | 942 | Masato Seki, Ryo Ishikawa, Kazuhiko Honjo. Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies |
| 943 | -- | 948 | Kazuhiro Mochizuki, Ken-ichi Tanaka, Takashi Shiota, Takafumi Taniguchi, Hiroyuki Uchiyama. Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation |
| 949 | -- | 953 | Hideaki Matsuzaki, Takashi Maruyama, Takatomo Enoki, Masami Tokumitsu. Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs |
| 954 | -- | 958 | Koji Inafune, Eiichi Sano, Hideaki Matsuzaki, Toshihiko Kosugi, Takatomo Enoki. W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs |
| 959 | -- | 964 | Takahiro Sugiyama, Eiji Nishimori, Satoru Ono, Kiyoshi Kawaguchi, Atsushi Nakagawa. HEMT CCD Matched Filter for Spread Spectrum Communication |
| 965 | -- | 971 | Masahiro Asada, Naoyuki Orihashi, Safumi Suzuki. Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes |
| 972 | -- | 978 | Yasuyuki Miyamoto, Ryo Nakagawa, Issei Kashima, Masashi Ishida, Nobuya Machida, Kazuhito Furuya. Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer |
| 979 | -- | 984 | Keisuke Eguchi, Masaru Chibashi, Shinpei Nakagawa, Mitsuhiro Tanihata, Takao Waho. A Design of Continuous-Time Delta-Sigma Modulators Using a Fully-Differential Resonant-Tunneling Comparator |
| 985 | -- | 992 | Mitsuhiro Hanabe, Takuya Nishimura, Masaki Miyamoto, Taiichi Otsuji, Eiichi Sano. Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer |
| 993 | -- | 998 | Yahya Moubarak Meziani, Jerzy Lusakowski, Nina Dyakonova, Wojciech Knap, Dalius Seliuta, Edmundas Sirmulis, Jan Devenson, Gintaras Valusis, Frédéric Boeuf, Thomas Skotnicki. Non Resonant Response to Terahertz Radiation by Submicron CMOS Transistors |
| 999 | -- | 1004 | Youhei Ookawa, Shigeru Kishimoto, Koichi Maezawa, Takashi Mizutani. Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation |
| 1005 | -- | 1011 | Takuya Nishimura, Mitsuhiro Hanabe, Masaki Miyamoto, Taiichi Otsuji, Eiichi Sano. Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer |
| 1012 | -- | 1019 | Victor Ryzhii, Akira Satou, Michael S. Shur. Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit-Time Effect |
| 1020 | -- | 1024 | Hideki Ono, Satoshi Taniguchi, Toshi-kazu Suzuki. Impurity Diffusion in InGaAs Esaki Tunnel Diodes of Varied Defect Densities |
| 1025 | -- | 1030 | Yong Cai, Yugang Zhou, Kei May Lau, Kevin J. Chen. Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage |
| 1031 | -- | 1036 | Daigo Kikuta, Jin-Ping Ao, Junya Matsuda, Yasuo Ohno. A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET |
| 1037 | -- | 1041 | Oktay Yilmazoglu, Kabula Mutamba, Dimitris Pavlidis, Marie Rose Mbarga. Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications |
| 1042 | -- | 1046 | Masaya Okada, Ryohei Takaki, Daigo Kikuta, Jin-Ping Ao, Yasuo Ohno. Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage |
| 1047 | -- | 1051 | Eunjung Cho, Dimitris Pavlidis, Guangyuan Zhao, Seth M. Hubbard, Johannes Schwank. Improvement of CO Sensitivity in GaN-Based Gas Sensors |
| 1052 | -- | 1056 | Shinichi Hoshi, Toshiharu Marui, Masanori Itoh, Yoshiaki Sano, Shouhei Seki. Influence of NH::3::-Plasma Pretreatment before Si::3::N::4:: Passivation Film Deposition on Current Collapse in AlGaN/GaN-HEMTs |
| 1057 | -- | 1063 | Masayuki Abe, Hiroyuki Nagasawa, Stefan Potthast, Jara Fernandez, Jörg Schörmann, Donat Josef As, Klaus Lischka. Cubic GaN/AlGaN HEMTs on 3C-SiC Substrate for Normally-Off Operation |
| 1064 | -- | 1067 | Yoshikazu Hirose, Akira Honshio, Takeshi Kawashima, Motoaki Iwaya, Satoshi Kamiyama, Michinobu Tsuda, Hiroshi Amano, Isamu Akasaki. Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT |
| 1068 | -- | 1079 | Xueliang Song, Naoki Futakuchi, Daisuke Miyashita, Foo Cheong Yit, Yoshiaki Nakano. Monolithically Integrated Mach-Zehnder Interferometer All-Optical Switches by Selective Area MOVPE |
| 1080 | -- | 1088 | Shin-ichi Yamamoto, Jiro Hirokawa, Makoto Ando. A Single-Layer Hollow-Waveguide 8-Way Butler Matrix |
| 1089 | -- | 1096 | Gholamreza Zareh Fatin, Mohammad Ghadami. A Very Low Power 10 MHz CMOS Continuous-Time Bandpass Filter with On-Chip Automatic Tuning |
| 1097 | -- | 1105 | Yong-Ju Kim, Won-Young Jung, Jae-Kyung Wee. Fast and Accurate Power Bus Designer for Multi-Layers High-Speed Digital Boards |
| 1106 | -- | 1107 | Kazuhiko Sumimura, Hidetsugu Yoshida, Hisanori Fujita, Masahiro Nakatsuka, Minoru Yoshida. Self-Starting Pulse Generation from Cooled Erbium-Doped Fiber Ring Laser |
| 1108 | -- | 1111 | Hiroki Kishikawa, Nobuo Goto. Switching Characteristics of All-Optical Wavelength-Selective Switch Using Waveguide-Type Raman Amplifiers and 3-dB Couplers |
| 1112 | -- | 1114 | Kazuhiko Sumimura, Hidetsugu Yoshida, Hisanori Fujita, Masahiro Nakatsuka, Hisashi Sawada. Self-Controlled Short Pulse Generator from All-Fiber Coupled Fabry-Perot Cavity |
| 1115 | -- | 1117 | Osamu Tadanaga, Masaki Asobe, Yoshiki Nishida, Hiroshi Miyazawa, Kaoru Yoshino, Hiroyuki Suzuki. 763-nm Laser Light Source for Oxygen Monitoring Using Second Harmonic Generation in Direct-Bonded Quasi-Phase-Matched LiNbO::3:: Ridge Waveguide |