| 1111 | -- | 0 | Guido Groeseneken, Ingrid De Wolf, A. J. Mouthaan, Jaap Bisschop. Editorial |
| 1112 | -- | 1113 | M. de Jong, D. Freeman. Bridging the business model gap between the semiconductor industry and the automotive industry with respect to quality and reliability |
| 1114 | -- | 1122 | M. Alam. Reliability- and process-variation aware design of integrated circuits |
| 1123 | -- | 1128 | J. van den Brand, J. de Baets, T. van Mol, A. Dietzel. Systems-in-foil - Devices, fabrication processes and reliability issues |
| 1129 | -- | 1132 | L. Crétinon, M. El Hadachi, F. Augereau, L. Doireau, G. Despaux. Influence of the organic pollution on the reliability of HE9 connectors |
| 1133 | -- | 1138 | Grzegorz Janczyk, Tomasz Bieniek, Jerzy Szynka, Piotr Grabiec. Reliability issues of e-Cubes heterogeneous system integration |
| 1139 | -- | 1143 | Cora Salm, Victor M. Blanco Carballo, Joost Melai, Jurriaan Schmitz. Reliability aspects of a radiation detector fabricated by post-processing a standard CMOS chip |
| 1144 | -- | 1148 | A. Aubert, L. Dantas de Morais, J. P. Rebrasse. Laser decapsulation of plastic packages for failure analysis: Process control and artefact investigations |
| 1149 | -- | 1154 | Chan-Yen Chou, Tuan-Yu Hung, Shin-Yueh Yang, Ming-Chih Yew, Wen-Kun Yang, Kuo-Ning Chiang. Solder joint and trace line failure simulation and experimental validation of fan-out type wafer level packaging subjected to drop impact |
| 1155 | -- | 1160 | N. Roth, W. Wondrak, A. Willikens, James Hofmeister. Ball grid array (BGA) solder joint intermittency real-time detection |
| 1161 | -- | 1166 | L. Feller, S. Hartmann, D. Schneider. Lifetime analysis of solder joints in high power IGBT modules for increasing the reliability for operation at 150 degreeC |
| 1167 | -- | 1170 | F. Sun, Hendrik Pieter Hochstenbach, Willem D. van Driel, G. Q. Zhang. Fracture morphology and mechanism of IMC in Low-Ag SAC Solder/UBM (Ni(P)-Au) for WLCSP |
| 1178 | -- | 1184 | T. Aichinger, M. Nelhiebel, T. Grasser. On the temperature dependence of NBTI recovery |
| 1185 | -- | 1188 | Jung-Eun Seok, Hyun Joo Kim, Jae-Yong Seo, Sam-Jin Hwang, Byung-Heon Kwak. Optimization of gate poly TAB size and reliability on short channel pMOSFET |
| 1189 | -- | 1192 | Peter Hofmann. Voltage acceleration of time dependent breakdown of ultra-thin NO and NON dielectrics |
| 1193 | -- | 1197 | E. Atanassova, Ninoslav Stojadinovic, Albena Paskaleva. Degradation behavior of Ta::2::O::5:: stacks and its dependence on the gate electrode |
| 1198 | -- | 1201 | M. Diop, N. Revil, M. Marin, F. Monsieur, P. Chevalier, G. Ghibaudo. Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride |
| 1202 | -- | 1207 | M. L. Bourqui, L. Béchou, Olivier Gilard, Y. Deshayes, P. Del Vecchio, L. S. How, F. Rosala, Y. Ousten, A. Touboul. Reliability investigations of 850 nm silicon photodiodes under proton irradiation for space applications |
| 1208 | -- | 1211 | G. Mura, G. Cassanelli, Fausto Fantini, Massimo Vanzi. Sulfur-contamination of high power white LED |
| 1212 | -- | 1215 | Xiang Liu, Jiann-shiun Yuan, Juin J. Liou. InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability |
| 1216 | -- | 1220 | Jae-Seong Jeong, Jin-Kyu Jung, Sang-Deuk Park. Reliability improvement of InGaN LED backlight module by accelerated life test (ALT) and screen policy of potential leakage LED |
| 1221 | -- | 1226 | Stanislaw Kalicinski, Martine Wevers, Ingrid De Wolf. Charging and discharging phenomena in electrostatically-driven single-crystal-silicon MEM resonators: DC bias dependence and influence on the series resonance frequency |
| 1227 | -- | 1231 | S. Bendida, J. J. Koning, J. J. M. Bontemps, J. T. M. van Beek, D. Wu, M. A. J. van Gils, S. Nath. Temperature stability of a piezoresistive MEMS resonator including self-heating |
| 1232 | -- | 1236 | A. Belarni, M. Lamhamdi, Patrick Pons, L. Boudou, J. Guastavino, Y. Segui, G. Papaioannou, Robert Plana. Kelvin probe microscopy for reliability investigation of RF-MEMS capacitive switches |
| 1237 | -- | 1240 | J. Ruan, G. J. Papaioannou, N. Nolhier, N. Mauran, M. Bafleur, Fabio Coccetti, Robert Plana. ESD failure signature in capacitive RF MEMS switches |
| 1241 | -- | 1244 | J. Ruan, E. Papandreou, M. Lamhamdi, M. Koutsoureli, Fabio Coccetti, Patrick Pons, G. Papaioannou, Robert Plana. Alpha particle radiation effects in RF MEMS capacitive switches |
| 1245 | -- | 1247 | A. Neels, A. Dommann, A. Schifferle, O. Papes, E. Mazza. Reliability and failure in single crystal silicon MEMS devices |
| 1248 | -- | 1252 | M. Lamhamdi, Patrick Pons, U. Zaghloul, L. Boudou, Fabio Coccetti, J. Guastavino, Y. Segui, G. Papaioannou, Robert Plana. Voltage and temperature effect on dielectric charging for RF-MEMS capacitive switches reliability investigation |
| 1253 | -- | 1257 | Peter Jacob, Werner Rothkirch. Unusual defects, generated by wafer sawing: Diagnosis, mechanisms and how to distinguish from related failures |
| 1258 | -- | 1262 | Christian Gautier, Sophie Ledain, Sébastien Jacqueline, Matthieu Nongaillard, Vincent Georgel, Karine Danilo. Silicon based system in package: Improvement of passive integration process to avoid TBMS failure |
| 1263 | -- | 1267 | P. Schwindenhammer, H. Murray, Ph. Descamps, P. Poirier. Determination of temperature change inside IC packages during laser ablation of molding compound |
| 1268 | -- | 1272 | W. D. van Driel, D. G. Yang, G. Q. Zhang. On chip-package stress interaction |
| 1273 | -- | 1278 | Andreas Altes, Rainer Tilgner, Markus Reissner, Grazyna Steckert, Gerald Neumann. Advanced thermal failure analysis and reliability investigations - Industrial demands and related limitations |
| 1279 | -- | 1284 | Antoine Reverdy, Philippe Perdu, H. Murray, M. de la Bardonnie, P. Poirier. Fast and rigorous use of thermal time constant to characterize back end of the line test structure in advanced technology |
| 1285 | -- | 1288 | D. Isakov, A. A. B. Tio, T. Geinzer, J. C. H. Phang, Y. Zhang, L. J. Balk. Near-field detection of photon emission from silicon with 30 nm spatial resolution |
| 1289 | -- | 1294 | Frank Zachariasse, Jan van Hassel. Conditional time resolved photoemission for debugging ICs with intermittent faults |
| 1295 | -- | 1299 | Piotr Laskowski, Arkadiusz Glowacki, Christian Boit. Detectability of dynamic photon emission in static Si CCD for signal path determination in integrated circuits |
| 1300 | -- | 1305 | P. Moens, G. Van den bosch. Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS |
| 1306 | -- | 1309 | G. Busatto, G. Currò, Francesco Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi. Experimental evidence of latent gate oxide damages in medium voltage power MOSFET as a result of heavy ions exposure |
| 1310 | -- | 1312 | Stefano Aresu, Reinhard Pufall, Michael Goroll, Wolfgang Gustin. NBTI on smart power technologies: A detailed analysis of two concurrent effects using a re-examined on-the-fly technique |
| 1313 | -- | 1317 | D. Dankovic, I. Manic, V. Davidovic, S. Djoric-Veljkovic, S. Golubovic, Ninoslav Stojadinovic. Negative bias temperature instability in n-channel power VDMOSFETs |
| 1318 | -- | 1321 | D. Pic, A. Regnier, V. Pean, Jean-Luc Ogier, D. Goguenheim. Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications |
| 1322 | -- | 1326 | Ulrike Kindereit, Christian Boit, Uwe Kerst, Steven Kasapi, Radu Ispasoiu, Roy Ng, William K. Lo. Comparison of laser voltage probing and mapping results in oversized and minimum size devices of 120 nm and 65 nm technology |
| 1327 | -- | 1332 | Tuba Kiyan, Christof Brillert, Christian Boit. Timing analysis of scan design integrated circuits using stimulation by an infrared diode laser in externally triggered pulsing condition |
| 1333 | -- | 1338 | Aziz Machouat, G. Haller, Vincent Goubier, Dean Lewis, Philippe Perdu, Vincent Pouget, Pascal Fouillat, F. Essely. Effect of physical defect on shmoos in CMOS DSM technologies |
| 1339 | -- | 1342 | Roland Biberger, Guenther Benstetter, Thomas Schweinboeck, Peter Breitschopf, Holger Goebel. Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling |
| 1343 | -- | 1348 | C. Hartmann, M. Wieberneit. Layout analysis as supporting tool for failure localization: Basic principles and case studies |
| 1349 | -- | 1353 | Liming Gao, Christian Burmer. PLL soft functional failure analysis in advanced logic product using fault based analogue simulation and soft defect localization |
| 1354 | -- | 1360 | Y. Deshayes, I. Bord, G. Barreau, M. Aiche, P. H. Moretto, L. Béchou, A. C. Roehrig, Y. Ousten. Selective activation of failure mechanisms in packaged double-heterostructure light emitting diodes using controlled neutron energy irradiation |
| 1361 | -- | 1365 | Francesca Danesin, Augusto Tazzoli, Franco Zanon, Gaudenzio Meneghesso, Enrico Zanoni, Antonio Cetronio, Claudio Lanzieri, Simone Lavanga, Marco Peroni, Paolo Romanini. Thermal storage effects on AlGaN/GaN HEMT |
| 1366 | -- | 1369 | M. Bouya, N. Malbert, Nathalie Labat, D. Carisetti, Philippe Perdu, J. C. Clement, B. Lambert, M. Bonnet. Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques |
| 1370 | -- | 1374 | Augusto Tazzoli, Gaudenzio Meneghesso, Franco Zanon, Francesca Danesin, Enrico Zanoni, P. Bove, R. Langer, J. Thorpe. Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields |
| 1375 | -- | 1383 | F. Chen, O. Bravo, D. Harmon, M. Shinosky, J. Aitken. Cu/low-k dielectric TDDB reliability issues for advanced CMOS technologies |
| 1384 | -- | 1387 | Kristof Croes, G. Cannatá, L. Zhao, Zsolt Tokei. Study of copper drift during TDDB of intermetal dielectrics by using fully passivated MOS capacitors as test vehicle |
| 1388 | -- | 1392 | Yuan Li, Leo van Marwijk, Som Nath. Fast electromigration wafer mapping for wafer fab process monitoring and improvement |
| 1393 | -- | 1397 | Kirsten Weide-Zaage, Jiani Zhao, Joharsyah Ciptokusumo, Oliver Aubel. Determination of migration effects in Cu-via structures with respect to process-induced stress |
| 1398 | -- | 1402 | Kirsten Weide-Zaage, Farzan Kashanchi, Oliver Aubel. Simulation of migration effects in nanoscaled copper metallizations |
| 1403 | -- | 1411 | Christian Russ. ESD issues in advanced CMOS bulk and FinFET technologies: Processing, protection devices and circuit strategies |
| 1412 | -- | 1416 | M. Verchiani, E. Bouyssou, G. Fiannaca, F. Cantin, C. Anceau, P. Ranson. Reliability study of TaON capacitors: From leakage current characterization to ESD robustness prediction |
| 1417 | -- | 1421 | E. H. T. Olthof, G. J. de Raad. Non-linear width scaling of ESD protection devices and link with p-well implant in BCD-processes |
| 1422 | -- | 1426 | Frédéric Barbier, Sebastien Jacqueline. ESD sensitivity investigation on a wide range of high density embedded capacitors |
| 1427 | -- | 1431 | X. Perpiñà, J. F. Serviere, Xavier Jordà, A. Fauquet, S. Hidalgo, J. Urresti-Ibañez, J. Rebollo, Michel Mermet-Guyennet. IGBT module failure analysis in railway applications |
| 1432 | -- | 1434 | Giovanni Breglio, Andrea Irace, E. Napoli, M. Riccio, Paolo Spirito, K. Hamada, T. Nishijima, T. Ueta. Detection of localized UIS failure on IGBTs with the aid of lock-in thermography |
| 1435 | -- | 1439 | G. Busatto, Carmine Abbate, B. Abbate, Francesco Iannuzzo. IGBT modules robustness during turn-off commutation |
| 1440 | -- | 1443 | Peter Borthen, Gerhard K. M. Wachutka. Testing semiconductor devices at extremely high operating temperatures |
| 1444 | -- | 1448 | V. Banu, P. Brosselard, Xavier Jordà, J. Montserrat, Philippe Godignon, José Millán. Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress |
| 1449 | -- | 1452 | Francesco Iannuzzo. High performance, FPGA-based test apparatus for unclamped inductive switching of IGBTs |
| 1453 | -- | 1458 | J. L. Fock-Sui-Too, B. Chauchat, P. Austin, P. Tounsi, Michel Mermet-Guyennet, R. Meuret. Performance and reliability testing of modern IGBT devices under typical operating conditions of aeronautic applications |
| 1459 | -- | 1463 | Fred G. Kuper. Automotive IC reliability: Elements of the battle towards zero defects |
| 1464 | -- | 1467 | J. B. Sauveplane, P. Tounsi, E. Scheid, A. Deram. 3D electro-thermal investigations for reliability of ultra low ON state resistance power MOSFET |
| 1468 | -- | 1472 | P. Cova, Nicola Delmonte, Roberto Menozzi. Thermal modeling of high frequency DC-DC switching modules: Electromagnetic and thermal simulation of magnetic components |
| 1473 | -- | 1478 | H. El Brouji, O. Briat, J.-M. Vinassa, N. Bertrand, E. Woirgard. Comparison between changes of ultracapacitors model parameters during calendar life and power cycling ageing tests |
| 1479 | -- | 1484 | J. Roig, B. Desoete, F. Bauwens, F. Lovadina, P. Moens. Thermal resistance assessment in multi-trenched power devices |
| 1485 | -- | 1489 | Yasunori Goto. Defect analysis concerning variation in characteristics of PIN diode for Hybrid Vehicles |
| 1490 | -- | 1493 | Reinhard Pufall, Werner Kanert, Stefano Aresu, Michael Goroll. Reduction of test effort. Looking for more acceleration for reliable components for automotive applications |
| 1494 | -- | 1499 | A. Gauffier, J. P. David, Olivier Gilard. Analytical model for multi-junction solar cells prediction in space environment |
| 1500 | -- | 1504 | Alberto Castellazzi, Mauro Ciappa. Novel simulation approach for transient analysis and reliable thermal management of power devices |
| 1505 | -- | 1508 | J. J. Koning, S. Lecaudey, E. Spaan, M. Stoutjesdijk, J. H. J. Janssen. Thermal heating within SOI |
| 1509 | -- | 1512 | Michael Goroll, Reinhard Pufall, Stefano Aresu, Wolfgang Gustin. New aspects for lifetime prediction of bipolar transistors in automotive power wafer technologies by using a power law fitting procedure |
| 1513 | -- | 1516 | S. Martens, B. Krueger, W. Mack, F. Voelklein, J. Wilde. Low-cost preparation method for exposing IC surfaces in stacked die packages by micro-abrasive blasting |
| 1517 | -- | 1520 | Yu Yang, Hugo Bender, Kai Arstila, Bart Swinnen, Bert Verlinden, Ingrid De Wolf. Detection of failure sites by focused ion beam and nano-probing in the interconnect of three-dimensional stacked circuit structures |
| 1521 | -- | 1524 | W. Polspoel, Wilfried Vandervorst, L. Aguilera, M. Porti, M. Nafría, X. Aymerich. Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors |
| 1525 | -- | 1528 | Michael Heer, P. Grombach, A. Heid, Dionyz Pogany. Hot spot analysis during thermal shutdown of SOI BCDMOS half bridge driver for automotive applications |
| 1529 | -- | 1532 | M. Sienkiewicz, Philippe Perdu, Abdellatif Firiti, Kevin Sanchez, O. Crépel, Dean Lewis. Failure Analysis enhancement by evaluating the Photoelectric Laser Stimulation impact on mixed-mode ICs |
| 1533 | -- | 1538 | Masaru Sanada. Voltage-based fault path tracing by transistor operating point analysis |
| 1539 | -- | 1543 | G. Beylier, S. Bruyère, D. Benoit, G. Ghibaudo. Impact of silicon nitride CESL on NLDEMOS transistor reliability |
| 1544 | -- | 1548 | Despina C. Moschou, M. A. Exarchos, Dimitrios N. Kouvatsos, G. J. Papaioannou, A. Arapoyanni, Apostolos T. Voutsas. Reliability and defectivity comparison of n- and p-channel SLS ELA polysilicon TFTs fabricated with a novel crystallization technique |
| 1549 | -- | 1552 | Muhammad Faiz Bukhori, Scott Roy, Asen Asenov. Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants |
| 1553 | -- | 1556 | Jan Ackaert, R. Charavel, K. Dhondt, B. Vlachakis, Luc De Schepper, M. Millecam, E. Vandevelde, P. Bogaert, A. Iline, Eddy De Backer, A. Vlad, Jean-Pierre Raskin. MIMC reliability and electrical behavior defined by a physical layer property of the dielectric |
| 1557 | -- | 1561 | Q. Li, J. F. L. Goosen, J. T. M. van Beek, F. van Keulen, K. L. Phan, G. Q. Zhang. Failure analysis of a thin-film nitride MEMS package |
| 1562 | -- | 1566 | K. Nötzold, J. Graf, Roland Müller-Fiedler. A four-point-bending-test for the stability assessment of glass frit bonded molded microsensors |
| 1567 | -- | 1571 | J. J. M. Zaal, W. D. van Driel, S. Bendida, Q. Li, J. T. M. van Beek, G. Q. Zhang. Packaging influences on the reliability of MEMS resonators |
| 1572 | -- | 1575 | Urban Kovac, Dave Reid, Campbell Millar, Gareth Roy, Scott Roy, Asen Asenov. Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET |
| 1576 | -- | 1580 | Elie Maricau, P. De Wit, Georges G. E. Gielen. An analytical model for hot carrier degradation in nanoscale CMOS suitable for the simulation of degradation in analog IC applications |
| 1581 | -- | 1585 | Guido T. Sasse, Mustafa Acar, Fred G. Kuper, Jurriaan Schmitz. RF CMOS reliability simulations |
| 1586 | -- | 1591 | Denis Teixeira Franco, Maí Correia Vasconcelos, Lirida A. B. Naviner, Jean-François Naviner. Signal probability for reliability evaluation of logic circuits |
| 1592 | -- | 1596 | Julie Ferrigno, Aziz Machouat, Philippe Perdu, Dean Lewis, Gerald Haller, Vincent Goubier. Generic simulator for faulty IC |
| 1597 | -- | 1600 | Weidong Kuang, Lizhi Cao, C. Yu, J. S. Yuan. PMOS breakdown effects on digital circuits - Modeling and analysis |
| 1601 | -- | 1603 | Maí C. R. de Vasconcelos, Denis Teixeira Franco, Lirida A. B. Naviner, Jean-François Naviner. Relevant metrics for evaluation of concurrent error detection schemes |
| 1604 | -- | 1607 | E. Miranda. Compact modeling of the non-linear post-breakdown current in thin gate oxides using the generalized diode equation |
| 1608 | -- | 1612 | Peter Jacob. Surface ESD (ESDFOS) in assembly fab machineries as a functional and reliability risk - Failure analysis, tool diagnosis and on-site-remedies |