| 935 | -- | 936 | Dean Lewis, Nathalie Labat. Editorial |
| 937 | -- | 940 | D. M. Tanner. MEMS reliability: Where are we now? |
| 941 | -- | 945 | T. Smedes. ESD testing of devices, ICs and systems |
| 946 | -- | 951 | C. Bestory, F. Marc, S. Duzellier, H. Levi. Electrical aging behavioral modeling for reliability analyses of ionizing dose effects on an n-MOS simple current mirror |
| 952 | -- | 957 | Jean Luc Lefebvre, Christian Gautier, Frédéric Barbier. Correlation between EOS customer return failure cases and Over Voltage Stress (OVS) test method |
| 958 | -- | 962 | Charles Regard, Christian Gautier, Hélène Frémont, Patrick Poirier, Xiaosong Ma, Kaspar M. B. Jansen. Fast reliability qualification of SiP products |
| 963 | -- | 966 | Jean-Baptiste Gros, Geneviève Duchamp, Alain Meresse, Jean-Luc Levant. Electromagnetic immunity model of an ADC for microcontroller s reliability improvement |
| 967 | -- | 971 | Marcel Held, Klaus Fritz. Comparison and evaluation of newest failure rate prediction models: FIDES and RIAC 217Plus |
| 972 | -- | 976 | Mauro Ciappa, Luigi Mangiacapra, Maria Stangoni, Stephan Ott, Wolfgang Fichtner. Ensuring the reliability of electron beam crosslinked electric cables by the optimization of the dose depth distribution with Monte Carlo simulation |
| 977 | -- | 981 | Digeorgia N. da Silva, André Inácio Reis, Renato P. Ribas. CMOS logic gate performance variability related to transistor network arrangements |
| 982 | -- | 988 | X. Garros, M. Casse, M. Rafik, C. Fenouillet-Béranger, Gilles Reimbold, F. Martin, C. Wiemer, F. Boulanger. Process dependence of BTI reliability in advanced HK MG stacks |
| 994 | -- | 997 | Yong-Woo Jeon, Dae Hyun Ka, Chong-Gun Yu, Won-Ju Cho, M. Saif Islam, Jong-Tae Park. NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer |
| 998 | -- | 1002 | Stanislav Tyaginov, Viktor Sverdlov, Ivan Starkov, Wolfgang Gös, Tibor Grasser. Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate |
| 1003 | -- | 1007 | I. Manic, D. Dankovic, S. Djoric-Veljkovic, V. Davidovic, S. Golubovic, Ninoslav Stojadinovic. Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs |
| 1008 | -- | 1012 | Christelle Bénard, Gaëtan Math, Pascal Fornara, Jean-Luc Ogier, Didier Goguenheim. Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities |
| 1013 | -- | 1017 | Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser. On the temperature and voltage dependence of short-term negative bias temperature stress |
| 1018 | -- | 1023 | M. A. Exarchos, G. J. Papaioannou, Jalal Jomaah, Francis Balestra. Investigation of defects introduced by static and dynamic hot carrier stress on SOI partially depleted body-contact MOSFETs |
| 1024 | -- | 1028 | A. Crespo-Yepes, J. Martín-Martínez, R. Rodríguez, M. Nafría, X. Aymerich. Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses |
| 1029 | -- | 1032 | A. Alaeddine, M. Kadi, K. Daoud, B. Mazari. Effects of electromagnetic near-field stress on SiGe HBT s reliability |
| 1033 | -- | 1037 | G. Busatto, G. Currò, Francesco Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi. Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions |
| 1038 | -- | 1043 | Jie Liao, Cher Ming Tan, Geert Spierings. Behavior of hot carrier generation in power SOI LDNMOS with shallow trench isolation (STI) |
| 1044 | -- | 1047 | Chi-Woo Lee, Isabelle Ferain, Aryan Afzalian, Ran Yan, Nima Dehdashti, Pedram Razavi, Jean-Pierre Colinge, Jong-Tae Park. NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs |
| 1048 | -- | 1051 | N. Berbel, R. Fernandez, I. Gil. Modelling and experimental verification of the impact of negative bias temperature instability on CMOS inverter |
| 1052 | -- | 1055 | E. Miranda, J. Martin-Martinez, E. O Connor, G. Hughes, P. Casey, K. Cherkaoui, S. Monaghan, R. Long, D. O Connell, P. K. Hurley. Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks |
| 1056 | -- | 1059 | J. Postel-Pellerin, F. Lalande, P. Canet, Rachid Bouchakour, F. Jeuland, B. Bertello, B. Villard. Extraction of 3D parasitic capacitances in 90 nm and 22 nm NAND flash memories |
| 1060 | -- | 1063 | J. Postel-Pellerin, F. Lalande, P. Canet, Rachid Bouchakour, F. Jeuland, L. Morancho. Modeling charge variation during data retention of MLC Flash memories |
| 1064 | -- | 1069 | Lucas Brusamarello, Gilson I. Wirth, Roberto da Silva. Statistical RTS model for digital circuits |
| 1070 | -- | 1073 | M. Roca, R. Laffont, G. Micolau, F. Lalande, O. Pizzuto. A Modelisation of the temperature dependence of the Fowler-Nordheim current in EEPROM memories |
| 1074 | -- | 1078 | M. T. Chentir, J.-B. Jullien, B. Valtchanov, E. Bouyssou, L. Ventura, C. Anceau. Percolation theory applied to PZT thin films capacitors breakdown mechanisms |
| 1079 | -- | 1085 | Wolfgang Stadler, Tilo Brodbeck, Reinhold Gärtner, Harald Gossner. Do ESD fails in systems correlate with IC ESD robustness? |
| 1086 | -- | 1089 | Arijit Roy, Yuejin Hou, Cher Ming Tan. Electromigration in width transition copper interconnect |
| 1090 | -- | 1095 | Joharsyah Ciptokusumo, Kirsten Weide-Zaage, Oliver Aubel. Investigation of stress distribution in via bottom of Cu-via structures with different via form by means of submodeling |
| 1096 | -- | 1102 | Muhammad Bashir, Linda S. Milor. A methodology to extract failure rates for low-k dielectric breakdown with multiple geometries and in the presence of die-to-die linewidth variation |
| 1103 | -- | 1106 | M. Diatta, E. Bouyssou, D. Trémouilles, P. Martinez, F. Roqueta, O. Ory, M. Bafleur. Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD) |
| 1107 | -- | 1110 | Philippe Galy, Sylvain Dudit, Michel Vallet, C. Richier, Christophe Entringer, F. Jezequel, E. Petit, J. Beltritti. Impact and damage on deep sub-micron CMOS technology induced by substrate current due to ESD stress |
| 1111 | -- | 1115 | Augusto Tazzoli, L. Cerati, A. Andreini, Gaudenzio Meneghesso. Breakdown characterization of gate oxides in 35 and 70 Å BCD8 smart power technology |
| 1116 | -- | 1126 | Masatsugu Yamashita, Chiko Otani, Sunmi Kim, Hironaru Murakami, Masayoshi Tonouchi, Toru Matsumoto, Yoshihiro Midoh, Katsuyoshi Miura, Koji Nakamae, Kiyoshi Nikawa. Laser THz emission microscope as a novel tool for LSI failure analysis |
| 1127 | -- | 1131 | Joy Y. Liao, Tung Ton, Nathan Slattengren, Steven Kasapi, William K. Lo, Howard L. Marks, Yin S. Ng, Ted Lundquist. Jitter analysis of PLL-generated clock propagation using Jitter Mitigation techniques with laser voltage probing |
| 1132 | -- | 1136 | Helmut Köck, Vladimir Kosel, Christian Djelassi, Michael Glavanovics, Dionyz Pogany. IR thermography and FEM simulation analysis of on-chip temperature during thermal-cycling power-metal reliability testing using in situ heated structures |
| 1137 | -- | 1142 | C. Hartmann, M. Wieberneit. Investigation on marginal failure characteristics and related defects analysed by soft defect localization |
| 1143 | -- | 1147 | C. Godlewski, Vincent Pouget, Dean Lewis, Mathieu Lisart. Electrical modeling of the effect of beam profile for pulsed laser fault injection |
| 1153 | -- | 1157 | Jae-Seong Jeong, Sang-Deuk Park. Failure analysis of video processor defined as No Fault Found (NFF): Reproduction in system level and advanced analysis technique in IC level |
| 1158 | -- | 1164 | Rudolf Schlangen, R. Leihkauf, Uwe Kerst, Ted Lundquist, Peter Egger, Christian Boit. Physical analysis, trimming and editing of nanoscale IC function with backside FIB processing |
| 1165 | -- | 1168 | A.-K. Tiedemann, K. Kurz, M. Fakhri, R. Heiderhoff, J. C. H. Phang, L. J. Balk. Finite element analyses assisted Scanning Joule Expansion Microscopy on interconnects for failure analysis and reliability investigations |
| 1169 | -- | 1174 | F. Infante, Philippe Perdu, Dean Lewis. Magnetic microscopy for 3D devices: Defect localization with high resolution and long working distance on complex system in package |
| 1175 | -- | 1181 | Gerald Haller, Aziz Machouat, Dean Lewis, Vincent Pouget. Net integrity checking by optical localization techniques |
| 1182 | -- | 1187 | Yasuhiro Mitsui, Takeshi Sunaoshi, Jon C. Lee. A study of electrical characteristic changes in MOSFET by electron beam irradiation |
| 1188 | -- | 1191 | M. Lanza, M. Porti, M. Nafría, X. Aymerich, G. Ghidini, A. Sebastiani. Trapped charge and stress induced leakage current (SILC) in tunnel SiO::2:: layers of de-processed MOS non-volatile memory devices observed at the nanoscale |
| 1192 | -- | 1195 | Roland Biberger, Guenther Benstetter, Holger Goebel. Displacement current sensor for contact and intermittent contact scanning capacitance microscopy |
| 1196 | -- | 1199 | G. Mura, Massimo Vanzi. Lot reliability issues in commercial off the shelf (COTS) microelectronic devices |
| 1200 | -- | 1206 | Jesús A. del Alamo, Jungwoo Joh. GaN HEMT reliability |
| 1207 | -- | 1210 | N. Ronchi, Franco Zanon, A. Stocco, Augusto Tazzoli, Enrico Zanoni, Gaudenzio Meneghesso. Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test |
| 1211 | -- | 1215 | Arkadiusz Glowacki, Piotr Laskowski, Christian Boit, Ponky Ivo, Eldad Bahat-Treidel, Reza Pazirandeh, Richard Lossy, Joachim Würfland, Günther Tränkle. Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures |
| 1216 | -- | 1221 | N. Malbert, Nathalie Labat, A. Curutchet, C. Sury, V. Hoel, J.-C. De Jaeger, N. Defrance, Y. Douvry, Christian Dua, Mourad Oualli, C. Bru-Chevallier, J. M. Bluet, W. Chikhaoui. Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs |
| 1222 | -- | 1225 | Michele Piazza, Christian Dua, Mourad Oualli, Erwan Morvan, Dominique Carisetti, Frédéric Wyczisk. Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs |
| 1226 | -- | 1230 | Cher Ming Tan, Boon Khai Eric Chen, Gan Xu, Yuanjie Liu. Analysis of humidity effects on the degradation of high-power white LEDs |
| 1231 | -- | 1235 | Jeung-Mo Kang, Jae Wook Kim, Jeong-Hyeon Choi, Du-Hyun Kim, Ho-Ki Kwon. Life-time estimation of high-power blue light-emitting diode chips |
| 1236 | -- | 1239 | Nicola Trivellin, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Kenji Orita, Masaaki Yuri, Tsuyoshi Tanaka, Daisuke Ueda. Reliability analysis of InGaN Blu-Ray laser diode |
| 1240 | -- | 1243 | E. Nogueira, Manuel Vázquez, Neftalí Núñez. Evaluation of AlGaInP LEDs reliability based on accelerated tests |
| 1244 | -- | 1249 | Tsung-Lin Chou, Chien-Fu Huang, Cheng-Nan Han, Shin-Yueh Yang, Kuo-Ning Chiang. Fabrication process simulation and reliability improvement of high-brightness LEDs |
| 1250 | -- | 1255 | Hua Lu 0003, Chris Bailey, Chunyan Yin. Design for reliability of power electronics modules |
| 1256 | -- | 1259 | J. Ruan, N. Nolhier, G. J. Papaioannou, D. Trémouilles, V. Puyal, C. Villeneuve, T. Idda, Fabio Coccetti, Robert Plana. Accelerated lifetime test of RF-MEMS switches under ESD stress |
| 1260 | -- | 1266 | S. Pietranico, S. Pommier, Stéphane Lefebvre, Zoubir Khatir, S. Bontemps. Characterisation of power modules ceramic substrates for reliability aspects |
| 1267 | -- | 1272 | M. Berthou, P. Retailleau, Hélène Frémont, A. Guédon-Gracia, C. Jéphos-Davennel. Microstructure evolution observation for SAC solder joint: Comparison between thermal cycling and thermal storage |
| 1273 | -- | 1277 | Manoubi Auguste Bahi, Hélène Frémont, Jean-Pierre Landesman, Annabelle Gentil, Pascal Lecuyer. A new methodology for the identification of ball bond degradation during high-temperature aging tests on devices in standard plastic packages |
| 1278 | -- | 1282 | Haruka Kubo, Mauro Ciappa, Takayuki Masunaga, Wolfgang Fichtner. Multiscale simulation of aluminum thin films for the design of highly-reliable MEMS devices |
| 1283 | -- | 1287 | G. Khatibi, W. Wroczewski, B. Weiss, H. Ipser. A novel accelerated test technique for assessment of mechanical reliability of solder interconnects |
| 1288 | -- | 1292 | Peter Jacob, Willy Knecht, Albert Kunz, Giovanni Nicoletti, Thomas Lautenschlager, Moreno Mondada, Damien Pachoud. Reading distance degradation mechanisms of near-field RFID devices |
| 1293 | -- | 1298 | Mirko Bernardoni, Paolo Cova, Nicola Delmonte, Roberto Menozzi. Heat management for power converters in sealed enclosures: A numerical study |
| 1299 | -- | 1303 | Y. Liu, F. J. H. G. Kessels, Willem D. van Driel, J. A. S. van Driel, F. L. Sun, G. Q. Zhang. Comparing drop impact test method using strain gauge measurements |
| 1304 | -- | 1308 | Mohamed Matmat, Fabio Coccetti, Antoine Marty, Robert Plana, Christophe Escriba, Jean-Yves Fourniols, Daniel Estève. Capacitive RF MEMS analytical predictive reliability and lifetime characterization |
| 1309 | -- | 1314 | U. Zaghloul, G. Papaioannou, Fabio Coccetti, Patrick Pons, Robert Plana. Dielectric charging in silicon nitride films for MEMS capacitive switches: Effect of film thickness and deposition conditions |
| 1315 | -- | 1318 | S. P. M. Noijen, Olaf van der Sluis, P. H. M. Timmermans, G. Q. Zhang. Numerical prediction of failure paths at a roughened metal/polymer interface |
| 1319 | -- | 1325 | U. Scheuermann. Reliability challenges of automotive power electronics |
| 1326 | -- | 1329 | Philippe Monfraix, Regis Barbaste, Jean Luc Muraro, Claude Drevon, Jean Louis Cazaux. Quasi hermetic packaging for new generation of spaceborn microwave equipment |
| 1330 | -- | 1333 | D. Martineau, T. Mazeaud, M. Legros, Ph. Dupuy, C. Levade, G. Vanderschaeve. Characterization of ageing failures on power MOSFET devices by electron and ion microscopies |
| 1334 | -- | 1340 | Vezio Malandruccolo, Mauro Ciappa, Hubert Rothleitner, Wolfgang Fichtner. A new built-in screening methodology to achieve zero defects in the automotive environment |
| 1341 | -- | 1345 | B. Bernoux, R. Escoffier, P. Jalbaud, J. M. Dorkel. Source electrode evolution of a low voltage power MOSFET under avalanche cycling |
| 1346 | -- | 1351 | G. Haberfehlner, Scrgey Bychikhin, V. Dubec, Michael Heer, A. Podgaynaya, M. Pfost, M. Stecher, Erich Gornik, Dionyz Pogany. Thermal imaging of smart power DMOS transistors in the thermally unstable regime using a compact transient interferometric mapping system |
| 1352 | -- | 1357 | F. Carastro, Alberto Castellazzi, J. C. Clare, M. Johnson, M. Bland, P. W. Wheeler. Reliability considerations in pulsed power resonant conversion |
| 1358 | -- | 1362 | Mounira Berkani, Stéphane Lefebvre, Narjes Boughrara, Zoubir Khatir, Jean-Claude Faugières, Peter Friedrichs, Ali Haddouche. Estimation of SiC JFET temperature during short-circuit operations |
| 1363 | -- | 1369 | Giovanni Busatto, Carmine Abbate, Francesco Iannuzzo, P. Cristofaro. Instable mechanisms during unclamped operation of high power IGBT modules |
| 1370 | -- | 1374 | A. Micol, A. Zeanh, T. Lhommeau, Stephane Azzopardi, E. Woirgard, O. Dalverny, M. Karama. An investigation into the reliability of power modules considering baseplate solders thermal fatigue in aeronautical applications |
| 1375 | -- | 1380 | L. Dupont, G. Coquery, K. Kriegel, A. Melkonyan. Accelerated active ageing test on SiC JFETs power module with silver joining technology for high temperature application |
| 1381 | -- | 1385 | F. Molière, B. Foucher, P. Perdu, A. Bravaix. Analysis of deep submicron VLSI technological risks: A new qualification process for professional electronics |
| 1386 | -- | 1390 | Lucio Rossi, M. Riccio, E. Napoli, Andrea Irace, Giovanni Breglio, Paolo Spirito. 1300 V, 2 ms pulse inductive load switching test circuit with 20 ns selectable crowbar intervention |
| 1391 | -- | 1397 | H. El Brouji, O. Briat, J.-M. Vinassa, H. Henry, E. Woirgard. Analysis of the dynamic behavior changes of supercapacitors during calendar life test under several voltages and temperatures conditions |
| 1398 | -- | 1403 | Yassine Belmehdi, Stephane Azzopardi, A. Benmansour, J.-Y. Delétage, Eric Woirgard. Uni-axial mechanical stress effect on Trench Punch through IGBT under short-circuit operation |