| 1273 | -- | 1278 | Lifeng Wu, Zhihong Liu. Full-Chip Reliability Simulation for VDSM Integrated Circuits |
| 1289 | -- | 1293 | A. Muehlhoff. An Extrapolation Model for Lifetime Prediction for Off-State - Degradation of MOS-FETs |
| 1295 | -- | 1300 | F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo. Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions |
| 1301 | -- | 1305 | Young-Pil Kim, Beom Jun Jin, Young Wook Park, Joo Tae Moon, Sang U. Kim. Analysis of retention tail distribution induced by scaled shallow trench isolation for high densityDRAMs |
| 1307 | -- | 1312 | N. Revil, X. Garros. Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and Applications |
| 1313 | -- | 1318 | A. Bravaix, D. Goguenheim, N. Revil, E. Vincent. Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs |
| 1319 | -- | 1324 | H. Puchner, Y.-C. Liu, W. Kong, F. Duan, R. Castagnetti. Substrate Engineering to Improve Soft-Error-Rate Immunity for SRAM Technologies |
| 1325 | -- | 1329 | Hamid Toutah, Jean-François Llibre, Boubekeur Tala-Ighil, Taieb Mohammed-Brahim, Youri Helen, G. Gautier, Olivier Bonnaud. Improved Stability of Large Area Excimer Laser Crstallised Polysilicon Thin Film Transistors under DC and AC Operating |
| 1331 | -- | 1334 | Yannick Rey-Tauriac, M. Taurin, Olivier Bonnaud. Wafer Level Accelerated test for ionic contamination control on VDMOS transistors in Bipolar/CMOS/DMOS |
| 1335 | -- | 1340 | Xavier Gagnard, Yannick Rey-Tauriac, Olivier Bonnaud. Polysilicon oxide quality optimization at Wafer level of a Bipolar/CMOS/DMOS technology |
| 1341 | -- | 1346 | M. Nakabayashi, H. Ohyama, E. Simoen, M. Ikegami, C. Claeys, K. Kobayashi, M. Yoneoka, K. Miyahara. Reliability of polycrystalline silicon thin film resistors |
| 1347 | -- | 1354 | A. Ghetti, M. Alam, J. Bude. Anode hole generation mechanisms |
| 1355 | -- | 1360 | D. Zander, F. Saigné, A. Meinertzhagen. Creation and thermal annealing of interface states induced by uniform or localized injection in 2.3nm thick oxides |
| 1361 | -- | 1366 | M. Fadlallah, A. Szewczyk, C. Giannakopoulos, B. Cretu, F. Monsieur, T. Devoivre, J. Jomaah, G. Ghibaudo. Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta::2::O::5:: as gate dielectrics |
| 1367 | -- | 1372 | S. Bruyère, F. Monsieur, D. Roy, E. Vincent, G. Ghibaudo. Failures in ultrathin oxides: Stored energy or carrier energy driven? |
| 1373 | -- | 1378 | Ninoslav Stojadinovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, S. Golubovic, S. Dimitrijev. Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs |
| 1379 | -- | 1383 | K. Gonf, H. G. Feng, R. Y. Zhan, A. Z. Wang. ESD-Induced Circuit Performance Degradation in RFICs |
| 1385 | -- | 1390 | Martin Litzenberger, R. Pichler, Scrgey Bychikhin, Dionyz Pogany, E. Gornik, K. Esmark, Harald Gossner. Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices |
| 1391 | -- | 1396 | N. Tosic Golo, S. van der Wal, Fred G. Kuper, Ton J. Mouthaan. The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin-film transistors |
| 1397 | -- | 1401 | Joachim C. Reiner, Thomas Keller. Relevance of contact reliability in HBM-ESD test equipment |
| 1403 | -- | 1407 | Jan Ackaert, Z. Wang, Eddy De Backer, P. Colson, Peter Coppens. Non Contact Surface Potential Measurements for Charging Reduction During Manufacturing of Metal-Insulator-Metal Capacitors |
| 1409 | -- | 1416 | S. Yokogawa, N. Okada, Y. Kakuhara, H. Takizawa. Electromigration Performance of Multi-level Damascene Copper Interconnects |
| 1417 | -- | 1420 | F. Dieudonné, F. Daugé, J. Jomaah, C. Raynaud, F. Balestra. An overview of hot-carrier induced degradation in 0.25 mum Partially and Fully Depleted SOI N-MOSFET s |
| 1421 | -- | 1425 | F. Lime, G. Ghibaudo, G. Guégan. Stress induced leakage current at low field in ultra thin oxides |
| 1427 | -- | 1431 | G. Chen, M. F. Li, Y. Jin. Electric passivation of interface traps at drain junction space charge region in p-MOS transistors |
| 1433 | -- | 1437 | A. Guilhaume, P. Galy, J. P. Chante, B. Foucher, F. Blanc. Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges |
| 1439 | -- | 1442 | K. Croes, R. Dreesen, J. Manca, Ward De Ceuninck, Luc De Schepper, L. Tielemans, P. van Der Wel. High-resolution in-situ of gold electromigration: test time reduction |
| 1443 | -- | 1448 | H. Ohyama, M. Nakabayashi, E. Simoen, C. Claeys, T. Tanaka, T. Hirao, S. Onada, K. Kobayashi. Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation |
| 1449 | -- | 1458 | Bernd Ebersberger, Alexander Olbrich, Christian Boit. Application of Scanning Probe Microscopy techniques in Semiconductor Failure Analysis |
| 1459 | -- | 1463 | H. Yabuhara, Mauro Ciappa, Wolfgang Fichtner. Diamond-Coated Cantilevers for Scanning Capacitance Microscopy Applications |
| 1465 | -- | 1470 | J. C. Tsang, Massimo V. Fischetti. Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies |
| 1471 | -- | 1476 | D. Lewis, V. Pouget, T. Beauchêne, Hervé Lapuyade, Pascal Fouillat, A. Touboul, Felix Beaudoin, Philippe Perdu. Front Side and Backside OBIT Mappings applied to Single Event Transient Testing |
| 1477 | -- | 1482 | Felix Beaudoin, X. Chauffleur, J. P. Fradin, Philippe Perdu, Romain Desplats, D. Lewis. Modeling Thermal Laser Stimulation |
| 1483 | -- | 1488 | C.-C. Tsao, Q. S. Wang, P. Bouchet, P. Sudraud. Coaxial Ion-Photon System |
| 1489 | -- | 1494 | Katsuyoshi Miura, Koji Nakamae, Hiromu Fujioka. Development of an EB/FIB Integrated Test System |
| 1495 | -- | 1499 | Romain Desplats, Philippe Perdu, Felix Beaudoin. A New Versatile Testing Interface for Failure Analysis in Integrated Circuits |
| 1501 | -- | 1506 | Scrgey Bychikhin, Martin Litzenberger, R. Pichler, Dionyz Pogany, E. Gornik, G. Groos, M. Stecher. Thermal and free carrier laser interferometric mapping and failure analysis of anti-serial smart power ESD protection structures |
| 1507 | -- | 1512 | Norman Goldblatt, Martin Leibowitz, William Lo. Unique and Practical IC Timing Analysis Tool Utilizing Intrinsic Photon Emission |
| 1513 | -- | 1518 | V. Pouget, Hervé Lapuyade, Pascal Fouillat, D. Lewis, S. Buchner. Theoretical Investigation of an Equivalent Laser LET |
| 1519 | -- | 1524 | M. Zmeck, J. Phang, A. Bettiol, T. Osipowicz, F. Watt, L. Balk, F.-J. Niedernostheide, H.-J. Schulze, E. Falck, R. Barthelmess. Analysis of high-power devices using proton beam induced charge microscopy |
| 1525 | -- | 1533 | Kazuko Ikeda. Evaluation method for the control of process induced defect in deep sub-micron device fabrication |
| 1535 | -- | 1537 | M. Leicht, G. Fritzer, B. Basnar, S. Golka, J. Smoliner. A reliable course of Scanning Capacitance Microscopy analysis applied for 2D-Dopant Profilings of Power MOSFET Devices |
| 1539 | -- | 1544 | Romain Desplats, Felix Beaudoin, Philippe Perdu, P. Poirier, D. Trémouilles, M. Bafleur, D. Lewis. Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation |
| 1545 | -- | 1549 | T. Lundquist, E. Delenia, J. Harroun, E. LeRoy, C.-C. Tsao. Ultra-Thinning of C4 Integrated Circuits for Backside Analysis during First Silicon Debug |
| 1551 | -- | 1556 | Jon C. Lee, David Su, J. H. Chuang. A Novel Application of the FIB Lift-out Technique for 3-D TEM Analysis |
| 1557 | -- | 1561 | Felix Beaudoin, Philippe Perdu, Romain Desplats, S. Rigo, D. Lewis. Silicon Thinning and Polishing on Packaged Devices |
| 1563 | -- | 1566 | A. Scavennec. Introduction of InP high speed electronics into optical fiber transmission systems and current technological limits |
| 1567 | -- | 1571 | Cezary Sydlo, Bastian Mottet, Husin Ganis, Hans L. Hartnagel, Viktor Krozer, S. L. Delage, Simone Cassette, Eric Chartier, D. Floriot, Steven Bland. Defect detection and modelling using pulsed electrical stress for reliability investigations of InGaP HBT |
| 1573 | -- | 1578 | B. Lambert, N. Malbert, N. Labat, F. Verdier, A. Touboul, P. Huguet, R. Bonnet, G. Pataut. Evolution of LF noise in Power PHEMT s submitted to RF and DC Step Stresses |
| 1579 | -- | 1584 | Gaudenzio Meneghesso, Gaudenzio Chini, Enrico Zanoni. Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs |
| 1585 | -- | 1589 | Mattia Borgarino, Giovanna Sozzi, Andrea Mazzanti, Giovanni Verzellesi. Gate-lag effects in AlGaAs/GaAs power HFET's |
| 1591 | -- | 1596 | R. Petersen, Ward De Ceuninck, Luc De Schepper, Olivier Vendier, Hervé Blanck, Dominique Pons. Determination of the thermal resistance and current exponent of heterojunction bipolar transistors for reliability evaluation |
| 1597 | -- | 1601 | Stefan Dilhaire, Stéphane Grauby, Sébastien Jorez, Luis David Patiño Lopez, Emmanuel Schaub, Wilfrid Claeys. Laser diode COFD analysis by thermoreflectance microscopy |
| 1603 | -- | 1607 | Paola Furcas, Rosaria De Palo, Maria Elena Patella, Giulia Salmini, Massimo Vanzi. Damp Heat test on LiNbO optical modulators |
| 1609 | -- | 1614 | Gaudenzio Meneghesso, Simona Podda, Massimo Vanzi. Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs |
| 1615 | -- | 1624 | Michael W. Lane, Jeffrey M. Snodgrass, Reinhold H. Dauskardt. Environmental Effects on Interfacial Adhesion |
| 1625 | -- | 1630 | David Dalleau, Kirsten Weide-Zaage. Three-Dimensional Voids Simulation in chip Metallization Structures: a Contribution to Reliability Evaluation |
| 1631 | -- | 1635 | Valeriy Sukharev, Ben P. Shieh, Ratan K. Choudhury, Chong W. Park, Krishna C. Saraswat. Reliability Studies on Multilevel Interconnection with Intermetal Dielectric Air Gaps |
| 1637 | -- | 1641 | Alan Mathewson, Carlos Montes de Oca, Sean Foley. Thermomechanical stress analysis of Cu/low-k dielectric interconnect schemes |
| 1643 | -- | 1648 | Risto Rautioaho, Olli Nousiainen, Seppo Leppävuori, Jaakko Lenkkeri, Tuomo Jaakola. Thermal fatigue in solder joints of Ag-Pd and Ag-Pt metallized LTCC modules |
| 1649 | -- | 1656 | Claude Drevon. RF Packaging for Space Applications: from Micropackage to SOP - "System On a Package" |
| 1657 | -- | 1662 | Ulrich Wagner, J. Franz, M. Schweiker, Winfried Bernhard, Roland Müller-Fiedler, Bernd Michel, Oliver Paul. Mechanical Reliability of MEMS-structures under shock load |
| 1663 | -- | 1669 | Guy Lefranc, Gerhard Mitic, H.-J. Schultz. Thermal management and reliability of multi-chip power modules |
| 1671 | -- | 1676 | J. M. Bosc. Integrated power transistor size optimisation |
| 1677 | -- | 1682 | Stéphane Forster, Thierry Lequeu, Robert Jérisian. Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects |
| 1683 | -- | 1687 | Luca Sponton, Lorenzo Cerati, Giuseppe Croce, Francesco Chrappan, Claudio Contiero, Gaudenzio Meneghesso, Enrico Zanoni. ESD protection structures for BCD5 smart power technologies |
| 1689 | -- | 1694 | Reinhard Schlegel, E. Herr, F. Richter. Reliability of non-hermetic pressure contact IGBT modules |
| 1695 | -- | 1700 | Gerard Coquery, S. Carubelli, J. P. Ousten, Richard Lallemand, Frederic Lecoq, Dominique Lhotellier, V. de Viry, Ph. Dupuy. Power module lifetime estimation from chip temperature direct measurement in an automotive traction inverter |
| 1701 | -- | 1705 | G. Simon, G. Guffroy. A pragmatic methodology for the monitoring of the electronic components ageing: The case of power thyristors at EDF |
| 1707 | -- | 1712 | Yannick Rey-Tauriac, M. Taurin, Olivier Bonnaud. High reliability power VDMOS Transistors in Bipolar/CMOS/DMOS technology |
| 1713 | -- | 1718 | Uwe Scheuermann, E. Herr. A Novel Power Module Design and Technology for Improved Power Cycling Capability |
| 1719 | -- | 1723 | M. Thoben, X. Xie, D. Silber, J. Wilde. Reliability of Chip/DCB Solder Joints in AlSiC Base Plate Power Modules: Influence of Chip Size |
| 1725 | -- | 1729 | Giovanni Busatto, Francesco Iannuzzo, Francesco Velardi, Jeffery Wyss. Non-destructive tester for single event burnout of power diodes |
| 1731 | -- | 1736 | Stephane Azzopardi, Atsuo Kawamura, Hideo Iwamoto, Olivier Briat, Jean-Michel Vinassa, Eric Woirgard, Christian Zardini. Local lifetime control IGBT structures: turn-off performances comparison for hard- and soft-switching between 1200V trench and new planar PT-IGBTs |