| 1169 | -- | 1170 | Nathalie Labat, François Marc. Editorial |
| 1171 | -- | 1178 | Christopher L. Henderson. Failure analysis techniques for a 3D world |
| 1179 | -- | 1182 | Charles E. Bauer, Herbert J. Neuhaus. Embedded packaging and assembly; Reliability and supply chain implications |
| 1183 | -- | 1188 | Chang-Chih Chen, Fahad Ahmed, Linda Milor. Impact of NBTI/PBTIon SRAMs within microprocessor systems: Modeling, simulation, and analysis |
| 1189 | -- | 1193 | Arwa Ben Dhia, S. N. Pagliarini, Lirida Alves de Barros Naviner, H. Mehrez, Philippe Matherat. A defect-tolerant area-efficient multiplexer for basic blocks in SRAM-based FPGAs |
| 1194 | -- | 1198 | C. Bergès, J. Goxe. Benefits of field failure distribution modeling to the failure analysis |
| 1199 | -- | 1202 | P. Steinhorst, T. Poller, J. Lutz. Approach of a physically based lifetime model for solder layers in power modules |
| 1203 | -- | 1207 | P. Lorenzi, R. Rao, T. Prifti, F. Irrera. 2-based RRAM |
| 1208 | -- | 1212 | Hassen Aziza, Marc Bocquet, Jean Michel Portal, M. Moreau, Christophe Muller. A novel test structure for OxRRAM process variability evaluation |
| 1213 | -- | 1217 | Nicoleta Cucu Laurenciu, Sorin Dan Cotofana. A nonlinear degradation path dependent end-of-life estimation framework from noisy observations |
| 1218 | -- | 1223 | P. Canet, Jérémy Postel-Pellerin, Jean-Luc Ogier. Access resistor modelling for EEPROM's retention test vehicle |
| 1224 | -- | 1229 | Wang Kang, Weisheng Zhao, Zhaohao Wang, Yue Zhang, Jacques-Olivier Klein, Youguang Zhang, Claude Chappert, Dafine Ravelosona. A low-cost built-in error correction circuit design for STT-MRAM reliability improvement |
| 1230 | -- | 1234 | S. N. Pagliarini, Arwa Ben Dhia, Lirida Alves de Barros Naviner, Jean-François Naviner. SNaP: A novel hybrid method for circuit reliability assessment under multiple faults |
| 1235 | -- | 1238 | S. I. Chan, J. H. Kang, Joong Soon Jang. Reliability improvement of automotive electronics based on environmental stress screen methodology |
| 1239 | -- | 1242 | S. Amara-Dababi, R. C. Sousa, H. Béa, C. Baraduc, K. Mackay, B. Dieny. Breakdown mechanisms in MgO based magnetic tunnel junctions and correlation with low frequency noise |
| 1243 | -- | 1246 | V. Velayudhan, F. Gamiz, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, X. Aymerich. Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs |
| 1247 | -- | 1251 | Alberto Crespo-Yepes, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, X. Aymerich. Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications |
| 1252 | -- | 1256 | Keith A. Jenkins, Pong-Fei Lu. On-chip circuit to monitor long-term NBTI and PBTI degradation |
| 1257 | -- | 1260 | X. Saura, D. Moix, Jordi Suñé, P. K. Hurley, Enrique Miranda. Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress |
| 1261 | -- | 1265 | M. K. Lim, Vassilios A. Chouliaras, C. L. Gan, Vincent M. Dwyer. Bidirectional electromigration failure |
| 1266 | -- | 1272 | Sonia Ben Dhia, Alexandre Boyer. Long-term Electro-Magnetic Robustness of Integrated Circuits: EMRIC research project |
| 1273 | -- | 1277 | J. Wu, Alexandre Boyer, J. Li, Sonia Bendhia, Bertrand Vrignon. LDO regulator DC characteristic and susceptibility prediction after electrical stress ageing |
| 1278 | -- | 1283 | Fabrice Caignet, Nicolas Nolhier, M. Bafleur, A. Wang, Nicolas Mauran. On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress |
| 1284 | -- | 1287 | Philippe Galy, T. Lim, J. Bourgeat, J. Jimenez, B. Heitz, D. Marin-Cudraz, Ph. Benech, J. M. Fournier. Symmetrical ESD protection for advanced CMOS technology dedicated to 100 GHz RF application |
| 1288 | -- | 1292 | F. Zhu, F. Fouquet, B. Ravelo, A. Alaeddine, M. Kadi. Experimental investigation of Zener diode reliability under pulsed Electrical Overstress (EOS) |
| 1293 | -- | 1299 | K. Guetarni, Antoine D. Touboul, J. Boch, L. Foro, A. Privat, A. Michez, J.-R. Vaillé, Frédéric Saigné. Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model |
| 1300 | -- | 1305 | Alexandre Sarafianos, Cyril Roscian, Jean-Max Dutertre, Mathieu Lisart, Assia Tria. Electrical modeling of the photoelectric effect induced by a pulsed laser applied to an SRAM cell |
| 1306 | -- | 1310 | A. Michez, J. Boch, S. Dhombres, Frédéric Saigné, Antoine D. Touboul, J.-R. Vaillé, Laurent Dusseau, E. Lorfèvre, R. Ecoffet. Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET |
| 1311 | -- | 1314 | Luca Sterpone. SEL-UP: A CAD tool for the sensitivity analysis of radiation-induced Single Event Latch-Up |
| 1315 | -- | 1319 | N. Mbaye, Vincent Pouget, F. Darracq, Dean Lewis. Characterization and modeling of laser-induced single-event burn-out in SiC power diodes |
| 1320 | -- | 1324 | Jean-Max Dutertre, Rodrigo Possamai Bastos, Olivier Potin, Marie-Lise Flottes, Bruno Rouzeyre, Giorgio Di Natale. Sensitivity tuning of a bulk built-in current sensor for optimal transient-fault detection |
| 1325 | -- | 1328 | I. El Moukhtari, Vincent Pouget, C. Larue, F. Darracq, Dean Lewis, Philippe Perdu. Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell |
| 1329 | -- | 1332 | Seung Min Lee, Hyun Jun Jang, Jong-Tae Park. Impact of back gate biases on hot carrier effects in multiple gate junctionless transistors |
| 1333 | -- | 1337 | J. M. Rafí, M. B. González, K. Takakura, I. Tsunoda, M. Yoneoka, O. Beldarrain, M. Zabala, F. Campabadal. 3 dielectrics of different thickness |
| 1338 | -- | 1341 | Pyung Moon, Jun Yeong Lim, Tae-Un Youn, Keum-Whan Noh, Sung-Kye Park, Ilgu Yun. Methodology for improvement of data retention in floating gate flash memory using leakage current estimation |
| 1342 | -- | 1345 | Vl. Kolkovsky, K. Lukat. 2 |
| 1346 | -- | 1350 | X. Saura, X. Lian, D. Jiménez, Enrique Miranda, X. Borrisé, F. Campabadal, Jordi Suñé. 2 based MIM structures |
| 1351 | -- | 1354 | Seonhaeng Lee, Cheolgyu Kim, Hyeokjin Kim, Gang-Jun Kim, Ji-Hoon Seo, Donghee Son, Bongkoo Kang. Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs |
| 1355 | -- | 1359 | Cicero Nunes, Paulo F. Butzen, André Inácio Reis, Renato P. Ribas. BTI, HCI and TDDB aging impact in flip-flops |
| 1360 | -- | 1364 | Paulo F. Butzen, Vinícius Dal Bem, André Inácio Reis, Renato P. Ribas. BTI and HCI first-order aging estimation for early use in standard cell technology mapping |
| 1365 | -- | 1369 | Aymen Moujbani, Jörg Kludt, Kirsten Weide-Zaage, Markus Ackermann, Verena Hein, Lutz Meinshausen. Dynamic simulation of migration induced failure mechanism in integrated circuit interconnects |
| 1370 | -- | 1374 | Yasunori Goto, Toru Matsumoto, Kiyoshi Nikawa. Observation of impurity diffusion defect in IGBT using a laser terahertz emission microscope technique |
| 1375 | -- | 1380 | W. Ben Naceur, N. Malbert, Nathalie Labat, Hélène Frémont, D. Carisetti, J. C. Clement, J. L. Muraro, B. Bonnet. Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques |
| 1381 | -- | 1386 | Emre Ilgünsatiroglu, Alexey Yu. Illarionov, Mauro Ciappa. Unstructured tetrahedric meshes for the description of complex three-dimensional sample geometries in Monte Carlo simulation of scanning electron microscopy images for metrology applications |
| 1387 | -- | 1392 | S. Chef, Sabir Jacquir, Kevin Sanchez, Philippe Perdu, Stéphane Binczak. Frequency mapping in dynamic light emission with wavelet transform |
| 1393 | -- | 1398 | Y. Weber, J. Goxe, M. Castignolles. Detectability of automotive power MOSFET on-resistance failure at high current induced by Wafer Fab process excursion |
| 1399 | -- | 1402 | Massimo Vanzi, Simona Podda, E. Musu, R. Cao. XEBIC at the Dual Beam |
| 1403 | -- | 1408 | Franc Dugal, Mauro Ciappa. Avoiding misleading artefacts in metallurgical preparation of die attach solder joints in high power modules |
| 1409 | -- | 1412 | Hiroaki Shiratsuchi, Kohei Matsushita, Ichiro Omura. IGBT chip current imaging system by scanning local magnetic field |
| 1413 | -- | 1417 | R. Heiderhoff, H. Li, T. Riedl. Dynamic Near-Field Scanning Thermal Microscopy on thin films |
| 1418 | -- | 1421 | J. Gaudestad, V. Talanov, M. Marchetti. Opens localization on silicon level in a Chip Scale Package using space domain reflectometry |
| 1422 | -- | 1426 | Kristian Bonderup Pedersen, Peter Kjær Kristensen, Vladimir Popok, Kjeld Pedersen. Micro-sectioning approach for quality and reliability assessment of wire bonding interfaces in IGBT modules |
| 1427 | -- | 1429 | Andreas Rummel, Klaus Schock, Matthias Kemmler, Andrew Smith, Stephan Kleindiek. Repairing bonding wire connections using a microsoldering unit inside an SEM |
| 1430 | -- | 1433 | Alexander Hofer, Roland Biberger, Günther Benstetter, Björn Wilke, Holger Göbel. Scanning probe microscopy based electrical characterization of thin dielectric and organic semiconductor films |
| 1434 | -- | 1438 | Chris Richardson, Gary Liechty, Clay Smith, Michael Karow. Contoured device sample preparation technique for ±5 μm remaining silicon thicknesses that meets solid immersion lens requirements |
| 1439 | -- | 1443 | P. J. van der Wel, T. Rödle, B. Lambert, H. Blanck, M. Dammann. Qualification of 50 V GaN on SiC technology for RF power amplifiers |
| 1444 | -- | 1449 | Clément Fleury, Rimma Zhytnytska, Sergey Bychikhin, Mattia Cappriotti, Oliver Hilt, Domenica Visalli, Gaudenzio Meneghesso, Enrico Zanoni, Joachim Würfl, Joff Derluyn, Gottfried Strasser, Dionyz Pogany. Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications |
| 1450 | -- | 1455 | Laurent Brunel, B. Lambert, P. Mezenge, J. Bataille, D. Floriot, J. Grünenpütt, H. Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat. Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress |
| 1456 | -- | 1460 | Isabella Rossetto, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni. Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics |
| 1461 | -- | 1465 | Alessandro Chini, F. Soci, Fausto Fantini, A. Nanni, A. Pantellini, Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni. Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs |
| 1466 | -- | 1470 | A. Bensoussan, R. Marec, J. L. Muraro, L. Portal, P. Calvel, C. Barillot, M. G. Perichaud, L. Marchand, G. Vignon. GaAs P-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing |
| 1471 | -- | 1475 | A. G. Metzger, Vincenzo d'Alessandro, Niccolò Rinaldi, Peter J. Zampardi. Evaluation of thermal balancing techniques in InGaP/GaAs HBT power arrays for wireless handset power amplifiers |
| 1476 | -- | 1480 | Isabella Rossetto, F. Rampazzo, R. Silvestri, A. Zanandrea, Christian Dua, Sylvain L. Delage, Mourad Oualli, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso. Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate |
| 1481 | -- | 1485 | Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto. Thermal instability during short circuit of normally-off AlGaN/GaN HFETs |
| 1486 | -- | 1490 | F. Giuliani, Nicola Delmonte, Paolo Cova, Roberto Menozzi. Temperature-dependent reverse-bias stress of normally-off GaN power FETs |
| 1491 | -- | 1495 | S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, A. Curutchet, N. Malbert, Nathalie Labat, D. Carisetti, B. Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau. Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements |
| 1496 | -- | 1500 | Mauro A. Bettiati. High optical strength GaAs-based laser structures |
| 1501 | -- | 1505 | V. Hortelano, J. Anaya, J. Souto, J. Jiménez, J. Périnet, F. Laruelle. Defect signatures in degraded high power laser diodes |
| 1506 | -- | 1509 | E. Suhir, L. Béchou. Saint-Venant's principle and the minimum length of a dual-coated optical fiber specimen in reliability (proof) testing |
| 1510 | -- | 1513 | S. Vaccari, Matteo Meneghini, A. Griffoni, D. Barbisan, Marco Barbato, S. Carraro, M. La Grassa, Gaudenzio Meneghesso, Enrico Zanoni. ESD characterization of multi-chip RGB LEDs |
| 1514 | -- | 1518 | A. Royon, K. Bourhis, L. Béchou, T. Cardinal, L. Canioni, Yannick Deshayes. Durability study of a fluorescent optical memory in glass studied by luminescence spectroscopy |
| 1519 | -- | 1523 | Y. G. Yoon, J. H. Kang, I. H. Jang, S. I. Chan, J. S. Jang. Conclusion of the accelerated stress conditions affecting phosphor-converted LEDs using the fractional factorial design method |
| 1524 | -- | 1528 | Matteo Dal Lago, Matteo Meneghini, Nicola Trivellin, G. Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni. "Hot-plugging" of LED modules: Electrical characterization and device degradation |
| 1529 | -- | 1533 | Massimo Vanzi, G. Mura, M. Marongiu, T. Tomasi. Optical losses in single-mode laser diodes |
| 1534 | -- | 1537 | C. De Santi, Matteo Meneghini, S. Carraro, S. Vaccari, Nicola Trivellin, S. Marconi, M. Marioli, Gaudenzio Meneghesso, Enrico Zanoni. Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes |
| 1538 | -- | 1542 | G. Mura, Massimo Vanzi, G. Marcello, R. Cao. The role of the optical trans-characteristics in laser diode analysis |
| 1543 | -- | 1547 | T. Ishizaki, T. Satoh, A. Kuno, A. Tane, M. Yanase, F. Osawa, Y. Yamada. Thermal characterizations of Cu nanoparticle joints for power semiconductor devices |
| 1548 | -- | 1552 | Ju Dy Lim, Susan Yeow Su Yi, MinWoo Daniel Rhee, Kam Chew Leong, Chee Cheong Wong. Surface roughness effect on copper-alumina adhesion |
| 1553 | -- | 1557 | Peter Jacob, Giovanni Nicoletti. Failure causes generating aluminium protrusion/extrusion |
| 1558 | -- | 1562 | B. Czerny, I. Paul, G. Khatibi, M. Thoben. Experimental and analytical study of geometry effects on the fatigue life of Al bond wire interconnects |
| 1563 | -- | 1567 | P. Rafiee, G. Khatibi, N. Nelhiebel, R. Pelzer. Application of quantitative modal analysis for investigation of thermal degradation of microelectronic packages |
| 1568 | -- | 1574 | M. Cai, D. J. Xie, W. B. Chen, B. Y. Wu, D. G. Yang, G. Q. Zhang. A novel soldering method to evaluate PCB pad cratering for pin-pull testing |
| 1575 | -- | 1580 | Lutz Meinshausen, Hélène Frémont, Kirsten Weide-Zaage, B. Plano. 0.5 solder joints on nickel gold pads |
| 1581 | -- | 1586 | F. L. Lau, Riko I. Made, W. N. Putra, J. Z. Lim, V. C. Nachiappan, J. L. Aw, C. L. Gan. Electrical behavior of Au-Ge eutectic solder under aging for solder bump application in high temperature Electronics |
| 1587 | -- | 1591 | Peter Borgesen, S. Hamasha, M. Obaidat, V. Raghavan, X. Dai, Michael Meilunas, M. Anselm. Solder joint reliability under realistic service conditions |
| 1592 | -- | 1596 | R. Riva, Cyril Buttay, Bruno Allard, P. Bevilacqua. Migration issues in sintered-silver die attaches operating at high temperature |
| 1597 | -- | 1601 | J.-B. Jullien, Hélène Frémont, Jean-Yves Delétage. Conductive adhesive joint for extreme temperature applications |
| 1602 | -- | 1605 | A. P. Singulani, Hajdin Ceric, Siegfried Selberherr. Stress evolution in the metal layers of TSVs with Bosch scallops |
| 1606 | -- | 1610 | Jörg Kludt, Kirsten Weide-Zaage, Markus Ackermann, Verena Hein. Dynamic simulation of octahedron slotted metal structures |
| 1611 | -- | 1616 | Nicola Delmonte, F. Giuliani, Paolo Cova. Finite element modeling and characterization of lead-free solder joints fatigue life during power cycling of surface mounting power devices |
| 1617 | -- | 1621 | Wissam Sabbah, Stephane Azzopardi, Cyril Buttay, Régis Meuret, Eric Woirgard. Study of die attach technologies for high temperature power electronics: Silver sintering and gold-germanium alloy |
| 1622 | -- | 1627 | P.-L. Charvet, P. Nicolas, D. Bloch, B. Savornin. MEMS packaging reliability assessment: Residual Gas Analysis of gaseous species trapped inside MEMS cavities |
| 1628 | -- | 1631 | M. Ayadi, Olivier Briat, A. Eddahech, R. German, G. Coquery, Jean-Michel Vinassa. Thermal cycling impacts on supercapacitor performances during calendar ageing |
| 1632 | -- | 1637 | Jae-Seong Jeong. Field failure mechanism and reproduction due to moisture for low-voltage ZnO varistors |
| 1638 | -- | 1642 | A. Oukaour, Mathieu Pouliquen, Boubekeur Tala-Ighil, H. Gualous, Eric Pigeon, Olivier Gehan, B. Boudart. Supercapacitors aging diagnosis using least square algorithm |
| 1643 | -- | 1647 | R. German, Olivier Briat, A. Sari, P. Venet, M. Ayadi, Y. Zitouni, Jean-Michel Vinassa. Impact of high frequency current ripple on supercapacitors ageing through floating ageing tests |
| 1648 | -- | 1654 | J. Keller, R. Mrossko, H. Dobrinski, J. Stürmann, R. Döring, R. Dudek, S. Rzepka, B. Michel. Effect of moisture swelling on MEMS packaging and integrated sensors |
| 1655 | -- | 1658 | M. Koutsoureli, L. Michalas, P. Martins, E. Papandreou, A. Leuliet, S. Bansropun, George Papaioannou, A. Ziaei. Properties of contactless and contacted charging in MEMS capacitive switches |
| 1659 | -- | 1662 | N. Torres Matabosch, F. Coccetti, M. Kaynak, B. Espana, Bernd Tillack, J. L. Cazaux. Failure analysis and detection methodology for capacitive RF-MEMS switches based on BEOL BiCMOS process |
| 1663 | -- | 1666 | B. Wang, Jeroen De Coster, Martine Wevers, Ingrid De Wolf. A novel method to measure the internal pressure of MEMS thin-film packages |
| 1667 | -- | 1671 | Jun-yong Tao, Xiao-Jing Wang, Bin Liu, Yan-Lei Wang, Zhi-Qian Ren, Xun Chen. Improved bending fatigue life of single crystal silicon micro-beam by phosphorus doping |
| 1672 | -- | 1675 | Yun-An Zhang, Jun-yong Tao, Yan-Lei Wang, Zhi-Qian Ren, Bin Liu, Xun Chen. The effect of water on the mechanical properties of native oxide coated silicon structure in MEMS |
| 1676 | -- | 1680 | Marcantonio Catelani, Lorenzo Ciani, Mirko Marracci, Bernardo Tellini. Analysis of ultracapacitors ageing in automotive application |
| 1681 | -- | 1686 | Peter Dietrich. Trends in automotive power semiconductor packaging |
| 1687 | -- | 1691 | U. Scheuermann, R. Schmidt. Impact of load pulse duration on power cycling lifetime of Al wire bonds |
| 1692 | -- | 1696 | Akihiko Watanabe, Masanori Tsukuda, Ichiro Omura. Real time degradation monitoring system for high power IGBT module under power cycling test |
| 1697 | -- | 1702 | Amadou Sow, Sinivassane Somaya, Yves Ousten, Jean-Michel Vinassa, Fanny Patoureaux. Power MOSFET active power cycling for medical system reliability assessment |
| 1703 | -- | 1706 | G. Rostaing, Mounira Berkani, D. Mechouche, D. Labrousse, Stéphane Lefebvre, Zoubir Khatir, Ph. Dupuy. Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications |
| 1707 | -- | 1712 | Carmine Abbate, G. Busatto, Francesco Iannuzzo, C. Ronsisvalle, A. Sanseverino, F. Velardi. Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit |
| 1713 | -- | 1718 | Vincenzo d'Alessandro, Alessandro Magnani, Michele Riccio, Yohei Iwahashi, Giovanni Breglio, Niccolò Rinaldi, Andrea Irace. Analysis of the UIS behavior of power devices by means of SPICE-based electrothermal simulations |
| 1719 | -- | 1724 | F. Baccar, Stephane Azzopardi, L. Theolier, K. El Boubkari, Jean-Yves Delétage, Eric Woirgard. Electrical characterization under mechanical stress at various temperatures of PiN power diodes in a health monitoring approach |
| 1725 | -- | 1729 | J. Moussodji, T. Kociniewski, Z. Khatir. Distributed electro-thermal model of IGBT chip - Application to top-metal ageing effects in short circuit conditions |
| 1730 | -- | 1734 | Takuo Kikuchi, Mauro Ciappa. A new two-dimensional TCAD model for threshold instability in silicon carbide MOSFETs |
| 1735 | -- | 1738 | D. Othman, Stéphane Lefebvre, Mounira Berkani, Zoubir Khatir, A. Ibrahim, A. Bouzourene. Robustness of 1.2 kV SiC MOSFET devices |
| 1739 | -- | 1744 | Michele Riccio, Alberto Castellazzi, G. De Falco, Andrea Irace. Experimental analysis of electro-thermal instability in SiC Power MOSFETs |
| 1745 | -- | 1749 | Michael Nelhiebel, Robert Illing, Thomas Detzel, S. Wöhlert, B. Auer, S. Lanzerstorfer, M. Rogalli, W. Robl, Stefan Decker, J. Fugger, Markus Ladurner. Effective and reliable heat management for power devices exposed to cyclic short overload pulses |
| 1750 | -- | 1754 | Toufik Azoui, Patrick Tounsi, Jean-Marie Dorkel, Jean-Michel Reynes, J. L. Massol, E. Pomes. Estimation of power MOSFET junction temperature during avalanche mode: Experimental tests and modelling |
| 1755 | -- | 1759 | T. Poller, S. D'Arco, M. Hernes, A. Rygg Ardal, J. Lutz. Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs |
| 1760 | -- | 1765 | Paolo Cova, Nicola Delmonte, F. Giuliani, M. Citterio, S. Latorre, M. Lazzaroni, A. Lanza. Thermal optimization of water heat sink for power converters with tight thermal constraints |
| 1766 | -- | 1770 | K. Sasaki, N. Ohno. Fatigue life evaluation of aluminum bonding wire in silicone gel under random vibration testing |
| 1771 | -- | 1773 | L. Yang, Alberto Castellazzi. High temperature gate-bias and reverse-bias tests on SiC MOSFETs |
| 1774 | -- | 1777 | Aaron Hutzler, Adam Tokarski, Andreas Schletz. Extending the lifetime of power electronic assemblies by increased cooling temperatures |
| 1778 | -- | 1782 | Masayuki Yoshimura, Atsushi Uchida, Satoshi Matsumoto. Design issues of a thin-film p-channel SOI power MOSFET for high-temperature applications |
| 1783 | -- | 1787 | L. Maresca, G. Romano, Giovanni Breglio, Andrea Irace. Physically based analytical model of the blocking I-V curve of Trench IGBTs |
| 1788 | -- | 1792 | R. Wu, Frede Blaabjerg, H. Wang, Marco Liserre. Overview of catastrophic failures of freewheeling diodes in power electronic circuits |
| 1793 | -- | 1797 | M. Tlig, J. Ben Hadj Slama, M. A. Belaid. Conducted and radiated EMI evolution of power RF N-LDMOS after accelerated ageing tests |
| 1798 | -- | 1803 | N. Wrachien, Andrea Cester, D. Bari, Raffaella Capelli, R. D'Alpaos, Michele Muccini, A. Stefani, G. Turatti, Gaudenzio Meneghesso. Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric |
| 1804 | -- | 1808 | D. Bari, N. Wrachien, R. Tagliaferro, Thomas M. Brown, Andrea Reale, Aldo Di Carlo, Gaudenzio Meneghesso, Andrea Cester. Comparison between positive and negative constant current stress on dye-sensitized solar cells |
| 1809 | -- | 1813 | Alessandro Compagnin, Matteo Meneghini, Marco Barbato, Valentina Giliberto, Andrea Cester, Massimo Vanzi, Giovanna Mura, Enrico Zanoni, Gaudenzio Meneghesso. Thermal and electrical investigation of the reverse bias degradation of silicon solar cells |
| 1814 | -- | 1817 | Hyun Jun Jang, Seung Min Lee, Chong-Gun Yu, Jong-Tae Park. A comparative study on device degradation under a positive gate stress and hot carrier stress in InGaZnO thin film transistors |
| 1818 | -- | 1822 | N. C. Park, J. S. Jeong, B. J. Kang, D. H. Kim. The effect of encapsulant discoloration and delamination on the electrical characteristics of photovoltaic module |
| 1823 | -- | 1827 | T.-H. Kim, N. C. Park, D. H. Kim. The effect of moisture on the degradation mechanism of multi-crystalline silicon photovoltaic module |