| 1401 | -- | 1402 | L. J. Balk, W. H. Gerling, E. Wolfgang. Editorial |
| 1403 | -- | 1414 | A. J. van Roosmalen, G. Q. Zhang. Reliability challenges in the nanoelectronics era |
| 1415 | -- | 1420 | Hideaki Tsuchiya, Shinji Yokogawa. Electromigration lifetimes and void growth at low cumulative failure probability |
| 1421 | -- | 1432 | Mogens Blanke, Jesper Sandberg Thomsen. Electrical steering of vehicles - fault-tolerant analysis and design |
| 1433 | -- | 1438 | M. Wagner, W. Unger, W. Wondrak. Part average analysis - A tool for reducing failure rates in automotive electronics |
| 1439 | -- | 1444 | P. Tanduo, L. Cola, S. Testa, M. Menchise, A. Mervic. Read disturb in flash memories: reliability case |
| 1445 | -- | 1450 | O. Briat, W. Lajnef, J.-M. Vinassa, E. Woirgard. Power cycling tests for accelerated ageing of ultracapacitors |
| 1451 | -- | 1457 | S. Charruau, F. Guerin, J. Hernández Dominguez, J. Berthon. Reliability estimation of aeronautic component by accelerated tests |
| 1458 | -- | 1463 | Liming Gao, Christian Burmer, Frank Siegelin. ATPG scan logic failure analysis: a case study of logic ICs - fault isolation, defect mechanism identification and yield improvement |
| 1464 | -- | 1471 | C. R. Parthasarathy, M. Denais, V. Huard, G. Ribes, D. Roy, C. Guérin, F. Perrier, E. Vincent, A. Bravaix. Designing in reliability in advanced CMOS technologies |
| 1472 | -- | 1477 | R. L. J. M. Ubachs, O. van der Sluis, W. D. van Driel, G. Q. Zhang. Multiscale modelling of multilayer substrates |
| 1478 | -- | 1481 | A. Chimenton, F. Irrera, P. Olivo. Improving performance and reliability of NOR-Flash arrays by using pulsed operation |
| 1482 | -- | 1485 | Christophe Entringer, Philippe Flatresse, Philippe Galy, Florence Azaïs, Pascal Nouet. Electro-thermal short pulsed simulation for SOI technology |
| 1486 | -- | 1497 | Christian Burmer, Siegfried Görlich. Failure analyses for debug and ramp-up of modern IC s |
| 1498 | -- | 1503 | Rudolf Schlangen, Peter Sadewater, Uwe Kerst, Christian Boit. Contact to contacts or silicide by use of backside FIB circuit edit allowing to approach every active circuit node |
| 1504 | -- | 1507 | Radu Ispasoiu, Tom Crawford, Brian Johnston, Chris Shaw, Steven Kasapi, Jason Goertz, Olivier Rinaudo, Peter Ouimet. Reduction of the acquisition time for CMOS time-resolved photon emission by optimized IR detection |
| 1508 | -- | 1513 | O. Breitenstein, F. Altmann, T. Riediger, D. Karg, V. Gottschalk. Lock-in thermal IR imaging using a solid immersion lens |
| 1514 | -- | 1519 | A. Douin, V. Pouget, M. De Matos, D. Lewis, Philippe Perdu, Pascal Fouillat. Time resolved imaging using synchronous picosecond Photoelectric Laser Stimulation |
| 1520 | -- | 1524 | J. M. Rampnoux, H. Michel, M. Amine Salhi, Stéphane Grauby, Wilfrid Claeys, Stefan Dilhaire. Time gating imaging through thick silicon substrate: a new step towards backside characterisation |
| 1525 | -- | 1529 | A. Altes, R. Tilgner, W. Walter. Numerical evaluation of miniaturized resistive probe for quantitative thermal near-field microscopy of thermal conductivity |
| 1530 | -- | 1535 | S. Courtas, M. Grégoire, X. Federspiel, N. Bicaïs-Lépinay, C. Wyon. Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development |
| 1536 | -- | 1541 | Marco Buzzo, Mauro Ciappa, Wolfgang Fichtner. Characterization of photonic devices by secondary electron potential contrast |
| 1542 | -- | 1547 | Yasunori Goto, Tomokatsu Higuchi. A 3D analysis technique for detecting trace metal contamination |
| 1548 | -- | 1553 | R. A. Nicholson, H. Suri. Physical-to-Logical Mapping of Emission Data using Place-and-Route |
| 1554 | -- | 1557 | N. Rodriguez, J. Adrian, C. Grosjean, G. Haller, C. Girardeaux, A. Portavoce. Evaluation of scanning capacitance microscopy sample preparation by focused ion beam |
| 1558 | -- | 1562 | Zhongling Qian, Frank Siegelin, Birgit Tippelt, Stefan Müller. Localization and physical analysis of a complex SRAM failure in 90nm technology |
| 1563 | -- | 1568 | F. Essely, F. Darracq, V. Pouget, M. Remmach, Felix Beaudoin, N. Guitard, M. Bafleur, Philippe Perdu, A. Touboul, D. Lewis. Application of various optical techniques for ESD defect localization |
| 1569 | -- | 1574 | C. De Nardi, Romain Desplats, Philippe Perdu, J.-L. Gauffier, C. Guérin. Descrambling and data reading techniques for flash-EEPROM memories. Application to smart cards |
| 1575 | -- | 1580 | M. Sanada, Y. Yoshizawa. Fault diagnosis technology based on transistor behavior analysis for physical analysis |
| 1581 | -- | 1586 | A. S. Oates, S. C. Lee. Electromigration failure distributions of dual damascene Cu /low - k interconnects |
| 1587 | -- | 1590 | Heinrich Wolf, Horst A. Gieser, Detlef Bonfert, Markus Hauser. ESD Susceptibility of Submicron Air Gaps |
| 1591 | -- | 1596 | M. Heer, V. Dubec, Scrgey Bychikhin, Dionyz Pogany, E. Gornik, M. Frank, A. Konrad, J. Schulz. Analysis of triggering behaviour of high voltage CMOS LDMOS clamps and SCRs during ESD induced latch-up |
| 1597 | -- | 1602 | D. Alvarez, M. J. Abou-Khalil, C. Russ, Kiran V. Chatty, Robert Gauthier, D. Kontos, J. Li, C. Seguin, R. Halbach. Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant |
| 1603 | -- | 1607 | T. Pompl, A. Kerber, M. Röhner, M. Kerber. Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides |
| 1608 | -- | 1611 | R. Fernández, R. Rodríguez, M. Nafría, X. Aymerich, Ben Kaczer, Guido Groeseneken. FinFET and MOSFET preliminary comparison of gate oxide reliability |
| 1612 | -- | 1616 | Tze Wee Chen, Choshu Ito, William Loh, Robert W. Dutton. Post-breakdown leakage resistance and its dependence on device area |
| 1617 | -- | 1622 | Cora Salm, A. J. Hof, Fred G. Kuper, J. Schmitz. Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs |
| 1623 | -- | 1628 | Gerald Lucovsky, H. Seo, L. B. Fleming, M. D. Ulrich, J. Lüning, Patrick Lysaght, Gennadi Bersuker. Intrinsic bonding defects in transition metal elemental oxides |
| 1629 | -- | 1633 | Detlef Bonfert, Horst A. Gieser, Heinrich Wolf, M. Frank, A. Konrad, J. Schulz. Transient-induced latch-up test setup for wafer-level and package-level |
| 1634 | -- | 1637 | J. T. Jang, Y.-C. Kim, W. H. Bong, E. K. Kwon, B. J. Kwon, J. S. Jeon, H. G. Kim, I. H. Son. A new high-voltage tolerant I/O for improving ESD robustness |
| 1638 | -- | 1642 | Cher Ming Tan, Wei Li, Kok Tong Tan, Frankie Low. Development of highly accelerated electromigration test |
| 1643 | -- | 1647 | J. R. Lloyd, C. E. Murray, S. Ponoth, S. Cohen, E. Liniger. The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics |
| 1648 | -- | 1651 | M. Goroll, W. Kanert, R. Pufall. ESD protection structure qualification - a new approach for release for automotive applications |
| 1652 | -- | 1656 | Arijit Roy, Cher Ming Tan. Experimental investigation on the impact of stress free temperature on the electromigration performance of copper dual damascene submicron interconnect |
| 1657 | -- | 1663 | J. M. Rafí, E. Simoen, K. Hayama, A. Mercha, F. Campabadal, H. Ohyama, C. Claeys. Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs |
| 1664 | -- | 1668 | Kyoung-Sik Im, Jae-Hyok Ko, Suk-Jin Kim, Chan-Hee Jeon, Chang-Su Kim, Ki-Tae Lee, Han-Gu Kim, Il-Hun Son. Novel ESD strategy for high voltage non-volatile programming pin application |
| 1669 | -- | 1672 | Simone Gerardin, A. Griffoni, A. Cester, Alessandro Paccagnella, G. Ghidini. Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress |
| 1673 | -- | 1678 | Robin C. J. Wang, C. C. Lee, L. D. Chen, Kenneth Wu, K. S. Chang-Liao. A study of Cu/Low-k stress-induced voiding at via bottom and its microstructure effect |
| 1679 | -- | 1684 | C. Yuan, W. D. van Driel, R. B. R. van Silfhout, O. van der Sluis, R. A. B. Engelen, L. J. Ernst, F. van Keulen, G. Q. Zhang. Delamination analysis of Cu/low-k technology subjected to chemical-mechanical polishing process conditions |
| 1685 | -- | 1694 | B. Wunderle, B. Michel. Progress in reliability research in the micro and nano region |
| 1695 | -- | 1699 | M. Exarchos, E. Papandreou, P. Pons, M. Lamhamdi, G. J. Papaioannou, R. Plana. Charging of radiation induced defects in RF MEMS dielectric films |
| 1700 | -- | 1704 | M. Lamhamdi, J. Guastavino, L. Boudou, Y. Segui, P. Pons, L. Bouscayrol, R. Plana. Charging-Effects in RF capacitive switches influence of insulating layers composition |
| 1705 | -- | 1710 | C. Palego, Arnaud Pothier, A. Crunteanu, Pierre Blondy. High power reliability aspects on RF MEMS varactor design |
| 1711 | -- | 1714 | P. Jacob, A. Kunz, G. Nicoletti. Reliability and wearout characterisation of LEDs |
| 1715 | -- | 1719 | M. Boutillier, O. Gauthier-Lafaye, S. Bonnefont, F. Lozes-Dupuy, F.-J. Vermersch, M. Krakowski, O. Gilard. Strong electron irradiation hardness of 852 nm Al-free laser diodes |
| 1720 | -- | 1724 | M. Meneghini, Simona Podda, A. Morelli, Ruggero Pintus, L. Trevisanello, Gaudenzio Meneghesso, Massimo Vanzi, Enrico Zanoni. High brightness GaN LEDs degradation during dc and pulsed stress |
| 1725 | -- | 1730 | A. Sozza, A. Curutchet, C. Dua, N. Malbert, N. Labat, A. Touboul. AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements |
| 1731 | -- | 1735 | K. Hayama, K. Takakura, K. Shigaki, H. Ohyama, J. M. Rafí, A. Mercha, E. Simoen, C. Claeys. Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation |
| 1736 | -- | 1740 | W. Bergbauer, T. Lutz, Werner Frammelsberger, Guenther Benstetter. Kelvin probe force microscopy - An appropriate tool for the electrical characterisation of LED heterostructures |
| 1741 | -- | 1746 | A. Crunteanu, Arnaud Pothier, Pierre Blondy, F. Dumas-Bouchiat, C. Champeaux, A. Catherinot, P. Tristant, O. Vendier, C. Drevon, J. L. Cazaux. Gamma radiation effects on RF MEMS capacitive switches |
| 1747 | -- | 1749 | A. V. Krivosheeva, V. L. Shaposhnikov, V. V. Lyskouski, V. E. Borisenko, F. Arnaud d'Avitaya, J.-L. Lazzari. 2 for spintronics |
| 1750 | -- | 1753 | Francesca Danesin, F. Zanon, Simone Gerardin, F. Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Alessandro Paccagnella. Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors |
| 1754 | -- | 1759 | Alberto Castellazzi, Mauro Ciappa, Wolfgang Fichtner, G. Lourdel, Michel Mermet-Guyennet. Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications |
| 1760 | -- | 1765 | P. Cova, N. Delmonte, Roberto Menozzi. Thermal characterization and modeling of power hybrid converters for distributed power systems |
| 1766 | -- | 1771 | L. Dupont, Z. Khatir, S. Lefebvre, S. Bontemps. Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling |
| 1772 | -- | 1777 | D. Barlini, Mauro Ciappa, Alberto Castellazzi, Michel Mermet-Guyennet, Wolfgang Fichtner. New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions |
| 1778 | -- | 1783 | A. Benmansour, S. Azzopardi, J. C. Martin, E. Woirgard. Failure mechanism of trench IGBT under short-circuit after turn-off |
| 1784 | -- | 1789 | A. Irace, G. Breglio, P. Spirito, A. Bricconi, D. Raffo, L. Merlin. Effect of a buffer layer in the epi-substrate region to boost the avalanche capability of a 100V Schottky diode |
| 1790 | -- | 1794 | F. Iannuzzo, G. Busatto, C. Abbate. Investigation of MOSFET failure in soft-switching conditions |
| 1795 | -- | 1799 | G. Cassanelli, G. Mura, Fausto Fantini, Massimo Vanzi, B. Plano. Failure Analysis-assisted FMEA |
| 1800 | -- | 1805 | M. A. Belaïd, K. Ketata, M. Masmoudi, M. Gares, H. Maanane, J. Marcon. Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests |
| 1806 | -- | 1811 | M. Gares, H. Maanane, M. Masmoudi, P. Bertram, J. Marcon, M. A. Belaïd, K. Mourgues, C. Tolant, Ph. Eudeline. Hot carrier reliability of RF N- LDMOS for S Band radar application |
| 1812 | -- | 1816 | Chuanzhao Yu, J. S. Yuan, Enjun Xiao. Dynamic voltage stress effects on nMOS varactor |
| 1817 | -- | 1822 | C. Moreau, P. Le Helleye, D. Ruelloux. A complete RF power technology assessment for military applications |
| 1823 | -- | 1827 | Guang Yu Huang, Cher Ming Tan. Device level electrical-thermal-stress coupled-field modeling |
| 1828 | -- | 1833 | D. Dankovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, S. Golubovic, Ninoslav Stojadinovic. NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs |
| 1834 | -- | 1839 | X. Perpiñà, J. F. Serviere, J. Saiz, D. Barlini, Michel Mermet-Guyennet, J. Millán. Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current |
| 1840 | -- | 1843 | C. Yu, L. Jiang, J. S. Yuan. Study of performance degradations in DC-DC converter due to hot carrier stress by simulation |
| 1844 | -- | 1847 | P. Zimprich, T. Licht, B. Weiss. A new method to characterize the thermomechanical response of multilayered structures in power electronics |
| 1848 | -- | 1853 | C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo. The high frequency behaviour of high voltage and current IGBT modules |
| 1854 | -- | 1857 | G. Busatto, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, G. Currò. Experimental study of power MOSFET s gate damage in radiation environment |
| 1858 | -- | 1863 | Jingchao Wang, Edgar Olthof, Wim Metselaar. Hot-carrier degradation analysis based on ring oscillators |
| 1864 | -- | 1867 | In Kyung Lee, Se Re Na Yun, Kyosun Kim, Chong-Gun Yu, Jong-Tae Park. New experimental findings on hot-carrier-induced degradation in lateral DMOS transistors |
| 1868 | -- | 1873 | R. Plieninger, M. Dittes, K. Pressel. Modern IC packaging trends and their reliability implications |
| 1874 | -- | 1879 | M. C. Yew, C. Y. Chou, C.-S. Huang, W. K. Yang, K. N. Chiang. The solder on rubber (SOR) interconnection design and its reliability assessment based on shear strength test and finite element analysis |
| 1880 | -- | 1885 | W. D. van Driel, O. van der Sluis, D. G. Yang, R. L. J. M. Ubachs, C. Zenz, G. Aflenzer, G. Q. Zhang. Reliability modelling for packages in flexible end-products |
| 1886 | -- | 1891 | W. C. Maia Filho, M. Brizoux, H. Frémont, Y. Danto. Improved physical understanding of intermittent failure in continuous monitoring method |
| 1892 | -- | 1897 | H. C. Yeo, N. Guo, H. Du, W. M. Huang, X. M. Jian. Characterisation of IC packaging interfaces and loading effects |
| 1898 | -- | 1903 | Toru Miyazaki, Tomoya Omata. Electromigration degradation mechanism for Pb-free flip-chip micro solder bumps |
| 1904 | -- | 1909 | S. Y. Yang, W. J. Lee, S. H. Jeong, S. J. Lee. Structural reliability assessment of multi-stack package (MSP) under high temperature storage (HTS) testing condition |
| 1910 | -- | 1914 | F. P. McCluskey, M. Dash, Z. Wang, D. Huff. Reliability of high temperature solder alternatives |
| 1915 | -- | 1921 | Shuang Yang, Ji Wu, Aristos Christou. Initial stage of silver electrochemical migration degradation |
| 1922 | -- | 1925 | Jean Augereau, Yves Ousten, Bruno Levrier, Laurent Béchou. Use of signal processing imaging for the study of a 3D package in harsh environment |
| 1926 | -- | 1931 | V. Krieger, W. Wondrak, A. Dehbi, W. Bartel, Yves Ousten, Bruno Levrier. Defect detection in multilayer ceramic capacitors |
| 1932 | -- | 1937 | Yasushi Yamada, Yoshikazu Takaku, Yuji Yagi, Y. Nishibe, I. Ohnuma, Y. Sutou, R. Kainuma, K. Ishida. Pb-free high temperature solders for power device packaging |