| 1249 | -- | 0 | Fausto Fantini, Massimo Vanzi. Editorial |
| 1251 | -- | 1258 | H. Iwai, S. Ohmi. Trend of CMOS downsizing and its reliability |
| 1259 | -- | 1266 | Michael G. Pecht, Diganta Das, Arun Ramakrishnan. The IEEE standards on reliability program and reliability prediction methods for electronic equipment |
| 1267 | -- | 1274 | Wolfgang Stadler, K. Esmark, Harald Gossner, M. Streibl, M. Wendel, Wolfgang Fichtner, Dionyz Pogany, Martin Litzenberger, E. Gornik. Device Simulation and Backside Laser Interferometry--Powerful Tools for ESD Protection Development |
| 1275 | -- | 1280 | F. Zängl, Harald Gossner, K. Esmark, R. Owen, G. Zimmermann. Case study of a technology transfer causing ESD problems |
| 1281 | -- | 1286 | M. Blaho, Dionyz Pogany, L. Zullino, A. Andreini, E. Gornik. Experimental and simulation analysis of a BCD ESD protection element under the DC and TLP stress conditions |
| 1287 | -- | 1292 | M. S. B. Sowariraj, Theo Smedes, Cora Salm, Ton J. Mouthaan, Fred G. Kuper. The influence of technology variation on ggNMOSTs and SCRs against CDM BSD stress |
| 1293 | -- | 1298 | Gaudenzio Meneghesso, A. Cocco, G. Mura, Simona Podda, Massimo Vanzi. Backside Failure Analysis of GaAs ICs after ESD tests |
| 1299 | -- | 1302 | P. Galy, V. Berland, B. Foucher, A. Guilhaume, J. P. Chante, S. Bardy, F. Blanc. Experimental and 3D simulation correlation of a gg-nMOS transistor under high current pulse |
| 1303 | -- | 1306 | L. Sponton, L. Cerati, G. Croce, G. Mura, Simona Podda, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni. ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology |
| 1307 | -- | 1310 | J. L. Goudard, P. Berthier, X. Boddaert, D. Laffitte, J. Périnet. New qualification approach for optoelectronic components |
| 1311 | -- | 1315 | M. Giglio, G. Martines, G. Mura, Simona Podda, Massimo Vanzi. An automated lifetest equipment for optical emitters |
| 1317 | -- | 1321 | Massimo Vanzi, G. Salmini, R. Pastorelli, S. Pessina, P. Furcas. Reliability tests on WDM filters |
| 1323 | -- | 1328 | François Caloz, Daniel Ernst, Patrick Rossini, Laura Gherardi, Lisa Grassi, Jean Arnaud. Reliability of optical connectors - Humidity behavior of the adhesive |
| 1329 | -- | 1332 | Klaus Duerr, Reinhard Pusch, Gottfried Schmitt. Reliability Problems of Passive Optical Devices and Modules after Mechanical, Thermal and Humidity Testing |
| 1333 | -- | 1338 | T. Tomasi, I. De Munari, V. Lista, L. Gherardi, A. Righetti, M. Villa. Passive optical components: from degradation data to reliability assessment - preliminary results |
| 1339 | -- | 1345 | L. Tielemans, R. Rongen, Ward De Ceuninck. How reliable are reliability tests? |
| 1347 | -- | 1351 | G. Scandurra, C. Ciofi, C. Pace, F. Speroni, F. Alagi. True constant temperature MTF test system for the characterization of electromigration of thick Cu interconnection lines |
| 1353 | -- | 1358 | B. Mongellaz, F. Marc, N. Milet-Lewis, Y. Danto. Contribution to ageing simulation of complex analogue circuit using VHDL-AMS behavioural modelling language |
| 1359 | -- | 1363 | R. Petersen, Ward De Ceuninck, Jan D Haen, Marc D Olieslaeger, Luc De Schepper, O. Vendier, H. Blanck, D. Pons. Exploring the limits of Arrhenius-based life testing with heterojunction bipolar transistor technology |
| 1365 | -- | 1368 | A. Mervic, A. Lanzani, M. Menchise, P. Serra, D. Gerosa. Contact resistivity instability in embedded SRAM memory |
| 1369 | -- | 1372 | E. Carvou, F. Le Bihan, A. C. Salaün, R. Rogel, Olivier Bonnaud, Yannick Rey-Tauriac, Xavier Gagnard, L. Roland. Reliability improvement of high value doped polysilicon-based resistors |
| 1373 | -- | 1376 | M. Mugnaini, M. Catelani, G. Ceschini, A. Masi, F. Nocentini. Pseudo Time-Variant parameters in centrifugal compressor availability studies by means of Markov models |
| 1377 | -- | 1380 | G. Ceschini, M. Mugnaini, A. Masi. A reliability study for a submarine compression application |
| 1381 | -- | 1384 | M. Catelani, R. Nicoletti. A Custom-designed automatic measurement system for acquisition and management of reliability data |
| 1385 | -- | 1388 | Yong-Ha Song, Myoung-Lae Park, Gye-Won Jung, Taek-Soo Kim. A study of advanced layout verification to prevent leakage current failure during power down mode operation |
| 1389 | -- | 1392 | V. Lista, P. Garbossa, T. Tomasi, M. Borgarino, Fausto Fantini, L. Gherardi, A. Righetti, M. Villa. Degradation Based Long-Term Reliability Assessment for Electronic Components in Submarine Applications |
| 1393 | -- | 1396 | P. Battista, M. Catelani, G. Fasano, A. Materassi. On the reliability of instruments for environmental monitoring: some practical considerations |
| 1397 | -- | 1403 | D. M. Fleetwood. Hydrogen-related reliability issues for advanced microelectronics |
| 1405 | -- | 1408 | B. Cretu, F. Balestra, G. Ghibaudo, G. Guégan. Origin of hot carrier degradation in advanced nMOSFET devices |
| 1409 | -- | 1413 | E. Andries, R. Dreesen, K. Croes, Ward De Ceuninck, Luc De Schepper, Guido Groeseneken, K. F. Lo, Marc D Olieslaeger, Jan D Haen. Statistical aspects of the degradation of LDD nMOSFETs |
| 1415 | -- | 1420 | H. V. Nguyen, Cora Salm, J. Vroemen, J. Voets, B. Krabbenborg, J. Bisschop, A. J. Mouthaan, Fred G. Kuper. Fast temperature cycling and electromigration induced thin film cracking in multilevel interconnection: experiments and modeling |
| 1421 | -- | 1425 | H. V. Nguyen, Cora Salm, R. Wenzel, A. J. Mouthaan, Fred G. Kuper. Simulation and experimental characterization of reservoir and via layout effects on electromigration lifetime |
| 1427 | -- | 1432 | Ruggero Feruglio, Fernanda Irrera, Bruno Riccò. Microscopic aspects of defect generation in SiO::2:: |
| 1433 | -- | 1438 | Mahesh S. Krishnan, Viktor Kol dyaev, Eiji Morifoji, Koji Miyamoto, Tomasz Brozek, Xiaolei Li. Series resistance degradation due to NBTI in PMOSFET |
| 1445 | -- | 1448 | R. Rodríguez, James H. Stathis, Barry P. Linder, S. Kowalczyk, Ching-Te Chuang, Rajiv V. Joshi, Gregory A. Northrop, Kerry Bernstein, A. J. Bhavnagarwala, Salvatore Lombardo. Analysis of the effect of the gate oxide breakdown on SRAM stability |
| 1449 | -- | 1452 | B. Domengès, P. Schwindenhammer, P. Poirier, Felix Beaudoin, Ph. Descamps. Comprehensive failure analysis of leakage faults in bipolar transistors |
| 1453 | -- | 1456 | A. Muehlhoff. Inversion of degradation direction of n-channel MOS-FETs in off-state operation |
| 1457 | -- | 1460 | Hajdin Ceric, Siegfried Selberherr. Simulative prediction of the resistance change due to electromigration induced void evolution |
| 1461 | -- | 1464 | A. N. Nazarov, I. N. Osiyuk, V. S. Lysenko, T. Gebel, L. Rebohle, W. Skorupa. Charge trapping and degradation in Ge:::+::: ion implanted SiO::2:: layers during high-field electron injection |
| 1465 | -- | 1468 | Ninoslav Stojadinovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, D. Dankovic, S. Golubovic, S. Dimitrijev. Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs |
| 1469 | -- | 1472 | M. R. Carriero, S. Di Pascoli, Giuseppe Iannaccone. Simulation of failure time distributions of metal lines under electromigration |
| 1473 | -- | 1480 | G. Ghidini, D. Brazzelli. Evaluation methodology of thin dielectrics for non-volatile memory application |
| 1481 | -- | 1484 | Salvatore Lombardo, James H. Stathis, Barry P. Linder. Dependence of Post-Breakdown Conduction on Gate Oxide Thickness |
| 1485 | -- | 1489 | S. Aresu, Ward De Ceuninck, R. Dreesen, K. Croes, E. Andries, J. Manca, Luc De Schepper, Robin Degraeve, Ben Kaczer, Marc D Olieslaeger. High-resolution SILC measurements of thin SiO::2:: at ultra low voltages |
| 1491 | -- | 1496 | E. Viganò, A. Ghetti, G. Ghidini, A. S. Spinelli. Post-breakdown characterization in thin gate oxides |
| 1497 | -- | 1500 | D. Roy, S. Bruyère, E. Vincent, F. Monsieur. Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement |
| 1501 | -- | 1504 | J. M. Rafí, B. Vergnet, F. Campabadal, C. Fleta, L. Fonseca, M. Lozano, C. Martínez, M. Ullán. Electrical characteristics of high-energy proton irradiated ultra-thin gate oxides |
| 1505 | -- | 1508 | F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo. Gate oxide Reliability assessment optimization |
| 1509 | -- | 1511 | P. Caprara, A. Barcella, M. Beltramello, C. Brambilla, S. Cereda, C. Caimi, V. Contin, V. Daniele, M. Fontana, P. Lucarno. Analyses on NVM Circuitry Delay Induced by Source & Drain BF::2:: Implant |
| 1513 | -- | 1516 | X. Blasco, M. Nafría, X. Aymerich. Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO::2:: Gate Oxide on MOS Structures |
| 1517 | -- | 1522 | J. Augereau, Y. Ousten, L. Béchou, Y. Danto. Acoustic analysis of an assembly: Structural identification by signal processing (wavelets) |
| 1523 | -- | 1528 | C. Passagrilli, L. Gobbato, R. Tiziani. Reliability of Au/Al bonding in plastic packages for high temperature (200degreeC) and high current applications |
| 1529 | -- | 1533 | P. Guilbault, E. Woirgard, C. Zardini, D. Lambert. Reliability study of the assembly of a large EGA on a build up board using thermo-mechanical simulations |
| 1535 | -- | 1540 | Mohandass Sivakumar, Vaidyanathan Kripesh, Chong Ser Choong, Chai Tai Chong, Loon Aik Lim. Reliability of Wire Bonding on Low-k Dielectric Material in Damascene Copper Integrated Circuits PBGA Assembly |
| 1541 | -- | 1546 | Giulio Di Giacomo, Stefano Oggioni. Reliability of Flip Chip Applications with Ceramic and Organic Chip Carriers |
| 1547 | -- | 1550 | A. Seppälä, T. Allinniemi, Eero Ristolainen. Failure mechanisms of adhesive flip chip joints |
| 1551 | -- | 1554 | G. Duchamp, Y. Ousten, Y. Danto. Evaluation of a micropackaging analysis technique by highfrequency microwaves |
| 1555 | -- | 1558 | Alexandrine Guédon, Eric Woirgard, Christian Zardini. Evaluation of lead-free soldering for automotive applications |
| 1559 | -- | 1562 | L. Frisk, J. Järvinen, R. Ristolainen. Chip on flex attachment with thermoplastic ACF for RFID applications |
| 1563 | -- | 1568 | Cezary Sydlo, M. Saglam, Bastian Mottet, M. Rodríguez-Gironés, Hans L. Hartnagel. Reliability investigations on HBV using pulsed electrical stress |
| 1569 | -- | 1573 | M. Dammann, F. Benkhelifa, M. Meng, W. Jantz. Reliability of Metamorphic HEMTs for Power Applications |
| 1575 | -- | 1580 | N. Labat, N. Malbert, B. Lambert, A. Touboul, F. Garat, B. Proust. Degradation mechanisms induced by thermal and bias stresses in InP HEMTs |
| 1581 | -- | 1585 | Felix Beaudoin, D. Carisetti, Romain Desplats, Philippe Perdu, D. Lewis, J. C. Clement. Backside Defect Localizations and Revelations Techniques on Gallium Arsenide (GaAs) Devices |
| 1587 | -- | 1592 | P. Cova, Roberto Menozzi, M. Dammann, T. Feltgen, W. Jantz. High-field step-stress and long term stability of PHEMTs with different gate and recess lengths |
| 1593 | -- | 1596 | V. Ichizli, M. Rodríguez-Gironés, L. Marchand, C. Garden, O. Cojocari, Bastian Mottet, Hans L. Hartnagel. Process Control and Failure Analysis Implementation for THz Schottky-based components |
| 1597 | -- | 1604 | N. Seliger, E. Wolfgang, G. Lefranc, H. Berg, T. Licht. Reliable power electronics for automotive applications |
| 1605 | -- | 1610 | Alberto Castellazzi, R. Kraus, N. Seliger, Doris Schmitt-Landsiedel. Reliability analysis of power MOSFET s with the help of compact models and circuit simulation |
| 1611 | -- | 1616 | R. Tiziani, G. Passoni, G. Santospirito. Adhesive die attach for power application: Performance and reliability in plastic package |
| 1617 | -- | 1622 | Sebastiano Russo, Romeo Letor, Orazio Viscuso, Lucia Torrisi, Gianluigi Vitali. Fast thermal fatigue on top metal layer of power devices |
| 1623 | -- | 1628 | Sudha Gopalan, Benno H. Krabbenborg, Jan-Hein Egbers, Bart van Velzen, Rene Zingg. Reliability of power transistors against application driven temperature swings |
| 1629 | -- | 1634 | F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Kaminksy. The Reliability of New Generation Power MOSFETs in Radiation Environment |
| 1635 | -- | 1640 | G. Busatto, B. Cascone, L. Fratelli, M. Balsamo, F. Iannuzzo, F. Velardi. Non-destructive high temperature characterisation of high-voltage IGBTs |
| 1641 | -- | 1646 | G. Lefranc, T. Licht, G. Mitic. Properties of solders and their fatigue in power modules |
| 1647 | -- | 1652 | Masanori Usui, Takahide Sugiyama, Masayasu Ishiko, Jun Morimoto, Hirokazu Saitoh, Masaki Ajioka. Characterization of Trench MOS Gate Structures Utilizing Photon Emission Microscopy |
| 1653 | -- | 1658 | Mauro Ciappa, Flavio Carbognani, P. Cova, Wolfgang Fichtner. A Novel Thermomechanics -Based Lifetime Prediction Model for Cycle Fatigue Failure Mechanisms in Power Semiconductors |
| 1659 | -- | 1662 | G. Curro, R. Greco, A. Scandurra. Growth process and chemical characterization of an ultrathin phosphate film grafted onto Al-alloy metallization surfaces relevant to microelectronic devices reliability |
| 1663 | -- | 1666 | S. Moreau, S. Forster, T. Lequeu, R. Jérisian. Influence of the turn-on mechanism on TRIACs reliability: di/dt thermal fatigue study in Q1 compared to Q2 |
| 1667 | -- | 1672 | Chun-Cheng Tsao, Bill Thompson, Ted Lundquist. Imaging and Material Analysis from Sputter-Induced Light Emission Using Coaxial Ion-Photon Column |
| 1673 | -- | 1677 | Dionyz Pogany, J. Kuzmik, J. Darmo, Martin Litzenberger, Scrgey Bychikhin, K. Unterrainer, Z. Mozolova, S. Hascik, Tibor Lalinsky, E. Gornik. Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique |
| 1679 | -- | 1684 | Katsuyoshi Miura, Koji Nakamae, Hiromu Fujioka. CAD navigation system, for backside waveform probing of CMOS devices |
| 1685 | -- | 1688 | A.-D. Müller, F. Müller, J. Middeke, J. Mehner, J. Wibbeler, Th. Gessner, M. Hietschold. Double-cantilever device for Atomic Force Microscopy in dynamic noncontact-mode |
| 1689 | -- | 1694 | Franco Stellari, Peilin Song, James C. Tsang, Moyra K. McManus, Mark B. Ketchen. Optical diagnosis of excess I::DDQ:: in low power CMOS circuits |
| 1695 | -- | 1700 | M. Neinhüs, R. Weber, Ulf Behnke, W. Merlin, E. Kubalek, R. A. Breil, M. Detje, A. Feltz. Contactless current and voltage measurements in integrated circuits by using a needle sensor |
| 1701 | -- | 1706 | Maria Stangoni, Mauro Ciappa, Marco Buzzo, M. Leicht, Wolfgang Fichtner. Simulation and Experimental Validation of Scanning Capacitance Microscopy Measurements across Low-doped Epitaxial PN-Junction |
| 1707 | -- | 1710 | Jon C. Lee, C.-H. Chen, David Su, J. H. Chuang. Investigation of Sensitivity Improvement on Passive Voltage Contrast for Defect Isolation |
| 1711 | -- | 1714 | T. H. Lee, X. Guo, G. D. Shen, Y. Ji, G. H. Wang, J. Y. Du, X. Z. Wang, G. Gao, A. Altes, L. J. Balk. Investigation of Tunnel-Regenerated Multi-Active-Region Light-Emitting Diodes (TRMAR LED) by Scanning Thermal Microscopy (STHM) |
| 1715 | -- | 1718 | C. Caprile, I. De Munari, M. Improntac, Simona Podda, A. Scorzoni, Massimo Vanzi. A specimen-current branching approach for FA of long Electromigration test lines |
| 1719 | -- | 1722 | R. F. Szeloch, T. P. Gotszalk, P. Janus. Scanning Thermal Microscopy in Microsystem Reliability Analysis |
| 1723 | -- | 1727 | C. Giret, D. Bru, D. Faure, C. Ali, M. Razani, D. Gobled. Electrical characteristics measurement of transistors by 4 tips-0.2 micron probing technique in Semiconductor Failure Analysis |
| 1729 | -- | 1734 | Felix Beaudoin, G. Haller, Philippe Perdu, Romain Desplats, T. Beauchêne, D. Lewis. Reliability Defect Monitoring with Thermal Laser Stimulation: Biased Versus Unbiased |
| 1735 | -- | 1740 | Janet E. Semmens, Lawrence W. Kessler. Application of Acoustic Frequency Domain Imaging for the Evaluation of Advanced Micro Electronic Packages |
| 1741 | -- | 1746 | O. Crépel, Felix Beaudoin, L. Dantas de Morais, G. Haller, C. Goupil, Philippe Perdu, Romain Desplats, D. Lewis. Backside Hot Spot Detection Using Liquid Crystal Microscopy |
| 1747 | -- | 1752 | N. Bicaïs-Lépinay, F. André, R. Pantel, S. Jullian, A. Margain, L. F. Tz. Kwakman. Lift-out techniques coupled with advanced TEM characterization methods for electrical failure analysis |
| 1753 | -- | 1757 | Joachim C. Reiner, Philippe Gasser, Urs Sennhauser. Novel FIB-based sample preparation technique for TEM analysis of ultra-thin gate oxide breakdown |
| 1759 | -- | 1762 | C. Hartmann, R. Weber, W. Mertin, E. Kubalek, A.-D. Müller, M. Hietschold. Simultaneous IC-internal voltage and current measurements via a multi lever Scanning Force Microscope |
| 1763 | -- | 1766 | O. Crépel, C. Goupil, B. Domengès, Ph. Descamps, Philippe Perdu, A. Doukkali. Magnetic field measurements for Non Destructive Failure Analysis |
| 1767 | -- | 1770 | D. Faure, C. A. Waggoner. A New sub-micro probing technique for failure analysis in integrated circuits |
| 1771 | -- | 1776 | Roland Müller-Fiedler, Ulrich Wagner, Winfried Bernhard. Reliability of MEMS - a methodical approach |
| 1777 | -- | 1782 | M. Dardalhon, Vincent Beroulle, Laurent Latorre, Pascal Nouet, Guy Perez, Jean Marc Nicot, Coumar Oudéa. Reliability analysis of CMOS MEMS structures obtained by Front Side Bulk Micromachining |
| 1783 | -- | 1788 | Alexander Polyakov, Marian Bartek, Joachim N. Burghartz. Mechanical Reliability of Silicon Wafers with Through-Wafer Vias for Wafer-Level Packaging |
| 1789 | -- | 1794 | Ingrid De Wolf, W. Merlijn van Spengen. Techniques to study the reliability of metal RF MEMS capacitive switches |
| 1795 | -- | 1800 | Olivier Millet, Dominique Collard, Lionel Buchaillot. Reliability of polysilicon microstructures: in situ test benches |
| 1801 | -- | 1806 | Alexander Frey, Franz Hofmann, R. Peters, Birgit Holzapfl, Meinrad Schienle, Christian Paulus, Petra Schindler-Bauer, Dirk Kuhlmeier, Jürgen Krause, Gerald Eckstein, Roland Thewes. Yield Evaluation of Gold Sensor Electrodes Used for Fully Electronic DNA Detection Arrays on CMOS |
| 1807 | -- | 1809 | A. Enzler, N. Herres, A. Dommann. Analysis of etched cantilevers |
| 1811 | -- | 1814 | Jakob Janting, Dirch Hjorth Petersen, Christoffer Greisen. Simulated SAM A-scans on multilayer MEMS components |
| 1815 | -- | 1817 | Djemel Lellouchi, Felix Beaudoin, Christophe Le Touze, Philippe Perdu, Romain Desplats. IR confocal laser microscopy for MEMS Technological Evaluation |
| 1819 | -- | 1822 | Phan L. P. Hoa, Gunnar Suchaneck, Gerald Gerlach. Investigation of dynamic disturbance quantities in piezoresistive silicon sensors |