| 1269 | -- | 1270 | Marise Bafleur, Philippe Perdu, François Marc, Hélène Frémont, Nicolas Nolhier. Editorial |
| 1271 | -- | 1279 | Stoyan Stoyanov, Christopher Bailey 0002. Modelling the impact of refinishing processes on COTS components for use in aerospace applications |
| 1280 | -- | 1284 | Taichun Qin, Shengkui Zeng, Jianbin Guo. Robust prognostics for state of health estimation of lithium-ion batteries based on an improved PSO-SVR model |
| 1285 | -- | 1289 | Mariem Slimani, Arwa Ben Dhia, Lirida A. B. Naviner. A novel analytical method for defect tolerance assessment |
| 1290 | -- | 1296 | Taizhi Liu, Chang-Chih Chen, Woongrae Kim, Linda Milor. Comprehensive reliability and aging analysis on SRAMs within microprocessor systems |
| 1297 | -- | 1301 | Nagarajan Raghavan, Daniel D. Frey. Particle filter approach to lifetime prediction for microelectronic devices and systems with multiple failure mechanisms |
| 1302 | -- | 1306 | Otto Aureliano Rolloff, Rodrigo Possamai Bastos, Laurent Fesquet. Exploiting reliable features of asynchronous circuits for designing low-voltage components in FD-SOI technology |
| 1307 | -- | 1312 | Louis Gerrer, Vihar P. Georgiev, Salvatore M. Amoroso, Ewan Towie, A. Asenov. Comparison of Si < 100 > and < 110 > crystal orientation nanowire transistor reliability using Poisson-Schrödinger and classical simulations |
| 1313 | -- | 1319 | Dae-Hyun Kim, Soonyoung Cha, Linda S. Milor. AVERT: An elaborate model for simulating variable retention time in DRAMs |
| 1320 | -- | 1322 | Jun Yeong Lim, Ilgu Yun. Reliability modeling and analysis of flicker noise for pore structure in amorphous chalcogenide-based phase-change memory devices |
| 1323 | -- | 1327 | Hao Cai, You Wang, Lirida A. B. Naviner, W. S. Zhao. Ultra wide voltage range consideration of reliability-aware STT magnetic flip-flop in 28 nm FDSOI technology |
| 1328 | -- | 1333 | Loic Welter, J. L. Scotto di Quaquero, Philippe Dreux, Laurent Lopez, Hassen Aziza, Jean Michel Portal. Improvement of MOSFET matching characterization with calibrated multiplexed test structure |
| 1334 | -- | 1340 | Taizhi Liu, Chang-Chih Chen, Soonyoung Cha, Linda Milor. System-level variation-aware aging simulator using a unified novel gate-delay model for bias temperature instability, hot carrier injection, and gate oxide breakdown |
| 1341 | -- | 1345 | Mohammad Naouss, F. Marc. Design and implementation of a low cost test bench to assess the reliability of FPGA |
| 1346 | -- | 1350 | Corinne Bergès, Y. Weber, Pierre Soufflet. General linearized model use for High Power Reliability Assessment test results: Conditions, procedure and case study |
| 1351 | -- | 1356 | Mauro Ciappa, Alessandro Blascovich. Reliability odometer for real-time and in situ lifetime measurement of power devices |
| 1357 | -- | 1362 | H. Tomonaga, Masanori Tsukuda, S. Okoda, R. Noda, K. Tashiro, Ichiro Omura. 16-Channel micro magnetic flux sensor array for IGBT current distribution measurement |
| 1363 | -- | 1368 | Masanori Tsukuda, H. Tomonaga, S. Okoda, R. Noda, K. Tashiro, Ichiro Omura. High-throughput and full automatic DBC-module screening tester for high power IGBT |
| 1369 | -- | 1372 | Christoph Eichenseer, Gerhard Pöppel, Thomas Mikolajick. Energy monitoring of high dose ion implantation in semiconductors via photocurrent measurement |
| 1373 | -- | 1378 | P. Balasubramanian, Douglas L. Maskell. A distributed minority and majority voting based redundancy scheme |
| 1379 | -- | 1383 | Alexandra L. Zimpeck, Cristina Meinhardt, Ricardo Augusto da Luz Reis. Impact of PVT variability on 20 nm FinFET standard cells |
| 1384 | -- | 1390 | Bo Sun, Wuyang Pan, Zili Wang, Kam-Chuen Yung. Envelope probability and EFAST-based sensitivity analysis method for electronic prognostic uncertainty quantification |
| 1391 | -- | 1394 | S. Douzi, M. Tlig, J. Ben Hadj Slama. Experimental investigation on the evolution of a conducted-EMI buck converter after thermal aging tests of the MOSFET |
| 1395 | -- | 1399 | Martin Versen, W. Ernst, G. Singh, Prince Gulati. Test setup for reliability studies of DDR2 SDRAM |
| 1400 | -- | 1403 | Z. F. Li, Yi Ren, Linlin Liu, Z. L. Wang. Parallel algorithm for finding modules of large-scale coherent fault trees |
| 1404 | -- | 1411 | Soonyoung Cha, Dae-Hyun Kim, Taizhi Liu, Linda S. Milor. The die-to-die calibrated combined model of negative bias temperature instability and gate oxide breakdown from device to system |
| 1412 | -- | 1416 | Nagarajan Raghavan, Michel Bosman, Kin Leong Pey. Probabilistic insight to possibility of new metal filament nucleation during repeated cycling of conducting bridge memory |
| 1417 | -- | 1421 | Giulio Torrente, Jean Coignus, Sophie Renard, Alexandre Vernhet, Gilles Reimbold, David Roy 0001, Gérard Ghibaudo. Physically-based extraction methodology for accurate MOSFET degradation assessment |
| 1422 | -- | 1426 | Nagarajan Raghavan, Daniel D. Frey, Michel Bosman, Kin Leong Pey. Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach |
| 1427 | -- | 1432 | Prateek Sharma, Stanislav Tyaginov, Yannick Wimmer, Florian Rudolf, Karl Rupp, Hubert Enichlmair, J. H. Park, Hajdin Ceric, Tibor Grasser. Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs |
| 1433 | -- | 1437 | Thomas Jacquet, Grazia Sasso, Anjan Chakravorty, N. Rinaldi, Klaus Aufinger, Thomas Zimmer, Vincenzo d'Alessandro, Cristell Maneux. Reliability of high-speed SiGe: C HBT under electrical stress close to the SOA limit |
| 1438 | -- | 1441 | Jin Hyung Choi, Jong-Tae Park. Wire width dependence of hot carrier degradation in silicon nanowire gate-all-around MOSFETs |
| 1442 | -- | 1445 | A. Rodríguez, M. B. Gonzalez, Francesca Campabadal, Jordi Suñé, Enrique Miranda. 3-based nanolaminates |
| 1446 | -- | 1449 | Paolo Lorenzi 0001, Rosario Rao, Fernanda Irrera. 2 resistive RAM device during constant voltage stress |
| 1450 | -- | 1455 | Kalya Shubhakar, Michel Bosman, O. A. Neucheva, Y. C. Loke, Nagarajan Raghavan, R. Thamankar, A. Ranjan, Sean J. O'Shea, K. L. Pey. x dielectric stacks for failure analysis |
| 1456 | -- | 1459 | Jae-Hoon Lee, Jin-Woo Han, Chong-Gun Yu, Jong-Tae Park. Effect of source and drain asymmetry on hot carrier degradation in vertical nanowire MOSFETs |
| 1460 | -- | 1463 | S. M. Merah, Bécharia Nadji, Hakim Tahi. Low magnetic field Impact on NBTI degradation |
| 1464 | -- | 1470 | Koji Eriguchi, Kouichi Ono. Impacts of plasma process-induced damage on MOSFET parameter variability and reliability |
| 1471 | -- | 1475 | Matteo Rigato, Clément Fleury, Michael Heer, Mattia Capriotti, Werner Simbürger, Dionyz Pogany. ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique |
| 1476 | -- | 1480 | Houssam Arbess, Marise Bafleur, David Trémouilles, Moustafa Zerarka. Optimization of a MOS-IGBT-SCR ESD protection component in smart power SOI technology |
| 1481 | -- | 1485 | Tudor Chirila, Winfried Kaindl, T. Reimann, Michael Rüb, U. Wahl. Analysis of the role of the parasitic BJT of Super-Junction power MOSFET under TLP stress |
| 1486 | -- | 1490 | Felipe Rosa, Raphael Martins Brum, Gilson I. Wirth, Fernanda Gusmão de Lima Kastensmidt, Luciano Ost, Ricardo Reis. Impact of dynamic voltage scaling and thermal factors on SRAM reliability |
| 1491 | -- | 1495 | Cécile Weulersse, Florent Miller, Thierry Carrière, R. Mangeret. Prediction of proton cross sections for SEU in SRAMs and SDRAMs using the METIS engineer tool |
| 1496 | -- | 1500 | Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi. Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT |
| 1501 | -- | 1505 | Daniela Munteanu, Jean-Luc Autran. SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation |
| 1506 | -- | 1511 | Jean-Luc Autran, Daniela Munteanu, S. Moindjie, T. Saad Saoud, S. Sauze, Gilles Gasiot, P. Roche. ASTEP (2005-2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure |
| 1512 | -- | 1516 | Boubekeur Tala-Ighil, Jean-Lionel Trolet, Hamid Gualous, P. Mary, Stéphane Lefebvre. Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET |
| 1517 | -- | 1521 | Tomoyuki Shoji, Shuichi Nishida, Kimimori Hamada, Hiroshi Tadano. Analysis of neutron-induced single-event burnout in SiC power MOSFETs |
| 1522 | -- | 1526 | Daniela Munteanu, Jean-Luc Autran. 3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs |
| 1527 | -- | 1531 | L. N. Kessarinskiy, A. Y. Borisov, D. V. Boychenko, A. Y. Nikiforov. DC-DC's total ionizing dose hardness decrease in passive reserve mode |
| 1532 | -- | 1536 | Philippe Galy, Wim Schoenmaker. Coupled electro-magnetic field & Lorentz force effects in silicon and metal for ESD investigation in transient and harmonic regimes |
| 1537 | -- | 1541 | Sharayu Jagtap, Dinesh Sharma, Shalabh Gupta. Design of SET tolerant LC oscillators using distributed bias circuitry |
| 1542 | -- | 1548 | Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin. Failure analysis of ESD-stressed SiC MESFET |
| 1549 | -- | 1553 | Antoine Nowodzinski, Mayeul Chipaux, L. Toraille, V. Jacques, J.-F. Roch, T. Debuisschert. Nitrogen-Vacancy centers in diamond for current imaging at the redistributive layer level of Integrated Circuits |
| 1554 | -- | 1558 | Günther Vogg, T. Heidmann, S. Brand. Scanning acoustic GHz-microscopy versus conventional SAM for advanced assessment of ball bond and metal interfaces in microelectronic devices |
| 1559 | -- | 1563 | Li Zhang, M. Koike, M. Ono, S. Itai, K. Matsuzawa, S. Ono, W. Saito, M. Yamaguchi, Y. Hayase, K. Hara. Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications |
| 1564 | -- | 1568 | Samuel Chef, Sabir Jacquir, Kevin Sanchez, Philippe Perdu, Stéphane Binczak, Chee Lip Gan. Unsupervised learning for signal mapping in dynamic photon emission |
| 1569 | -- | 1573 | M. Béranger. Use of a silicon drift detector for cathodoluminescence detection |
| 1574 | -- | 1578 | M. Castignolles, Julien Goxe, R. Martin. Failure analysis on recovering low resistive via in mixed-mode device |
| 1579 | -- | 1584 | Allesandra Fudoli, G. Martino, A. Scrofani, P. Aliberti, D. Gallo, M. Cason. RF functional-based complete FA flow |
| 1585 | -- | 1591 | Anthony Boscaro, Sabir Jacquir, Kevin Sanchez, Philippe Perdu, Stéphane Binczak. Improvement of signal to noise ratio in electro optical probing technique by wavelets filtering |
| 1592 | -- | 1599 | Nicolas Borrel, Clement Champeix, Edith Kussener, Wenceslas Rahajandraibe, Mathieu Lisart, Jean-Max Dutertre, Alexandre Sarafianos. Electrical model of an inverter body-biased structure in triple-well technology under pulsed photoelectric laser stimulation |
| 1600 | -- | 1606 | Thomas Zirilli. Die crack failure mechanism investigations depending on the time of failure |
| 1607 | -- | 1610 | Julien Goxe, C. Abouda, Béatrice Vanhuffel. Latent gate oxide defects case studies |
| 1611 | -- | 1616 | H. H. Yap, P. K. Tan, G. R. Low, M. K. Dawood, H. Feng, Y. Z. Zhao, R. He, H. Tan, J. Zhu, B. Liu, Y. M. Huang, D. D. Wang, J. Lam, Z. H. Mai. Top-down delayering to expose large inspection area on die side-edge with Platinum (Pt) deposition technique |
| 1617 | -- | 1621 | R. Ricciari, E. P. Ferlito, G. Pizzo, M. Padalino, G. Anastasi, M. Sacchi, G. Pappalardo, C. Consalvo, Domenico Mello. Auger electron spectroscopy characterization of Ti/NiV/Ag multilayer back-metal for monitoring of Ni migration on Ag surface |
| 1622 | -- | 1627 | Nicolas Courjault, Philippe Perdu, F. Infante, Thierry Lebey, V. Bley. Magnetic imaging for resistive, capacitive and inductive devices; from theory to piezo actuator failure localization |
| 1628 | -- | 1633 | Koichi Endo, Kenji Norimatsu, Tomonori Nakamura, Takashi Setoya, Koji Nakamae. Thermoreflectance mapping observation of Power MOSFET under UIS avalanche breakdown condition |
| 1634 | -- | 1639 | Richard Randoll, Mahmud Asef, Wolfgang Wondrak, Lars Böttcher, Andreas Schletz. Characteristics and aging of PCB embedded power electronics |
| 1640 | -- | 1643 | V. Giuffrida, P. Barbarino, Giuseppe Muni, G. Calvagno, G. Latteo, Domenico Mello. Fault isolation in a case study of failure analysis on Metal-Insulator-Metal capacitor structures |
| 1644 | -- | 1648 | P. J. de Veen, C. Bos, D. R. Hoogstede, C. Th. A. Revenberg, J. Liljeholm, Thorbjorn Ebefors. High-resolution X-ray computed tomography of through silicon vias for RF MEMS integrated passive device applications |
| 1649 | -- | 1653 | Y. Wang, Hao Cai, Lirida A. B. Naviner, Y. Zhang, Jacques-Olivier Klein, Weisheng Zhao. Compact thermal modeling of spin transfer torque magnetic tunnel junction |
| 1654 | -- | 1661 | Isik C. Kizilyalli, P. Bui-Quang, D. Disney, H. Bhatia, Ozgur Aktas. Reliability studies of vertical GaN devices based on bulk GaN substrates |
| 1662 | -- | 1666 | Davide Bisi, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Fabio Soci, A. Pantellini, Claudio Lanzieri, Piero Gamarra, C. Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, D. De Salvador, M. Bazzan, Gaudenzio Meneghesso, Enrico Zanoni. Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs |
| 1667 | -- | 1671 | M. Dammann, M. Baeumler, P. Brückner, W. Bronner, Stephan Maroldt, H. Konstanzer, Matthias Wespel, Rüdiger Quay, Michael Mikulla, Andreas Graff, M. Lorenzini, M. Fagerlind, P. J. van der Wel, T. Rödle. Degradation of 0.25 μm GaN HEMTs under high temperature stress test |
| 1672 | -- | 1676 | M. Rzin, Nathalie Labat, Nathalie Malbert, A. Curutchet, Laurent Brunel, Benoit Lambert. Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs |
| 1677 | -- | 1681 | Susanne Fichtner, Sophia Frankeser, Josef Lutz, R. Rupp, T. Basler, R. Gerlach. Ruggedness of 1200 V SiC MPS diodes |
| 1682 | -- | 1686 | Wataru Saito, T. Suwa, T. Uchihara, T. Naka, T. Kobayashi. Breakdown behaviour of high-voltage GaN-HEMTs |
| 1687 | -- | 1691 | Clément Fleury, Mattia Capriotti, Matteo Rigato, Oliver Hilt, Joachim Würfl, Joff Derluyn, Stephan Steinhauer, Anton Köck, Gottfried Strasser, Dionyz Pogany. High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications |
| 1692 | -- | 1696 | Isabella Rossetto, Matteo Meneghini, Davide Bisi, A. Barbato, Marleen Van Hove, Denis Marcon, Tian-Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni. Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs |
| 1697 | -- | 1702 | K. Adokanou, Karim Inal, Pierre Montmitonnet, F. Pressecq, B. Bonnet, J. L. Muraro. Investigation on the effect of external mechanical stress on the DC characteristics of GaAs microwave devices |
| 1703 | -- | 1707 | Alexis Divay, M. Masmoudi, Olivier Latry, C. Duperrier, Farid Temcamani. An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors |
| 1708 | -- | 1713 | Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Mickael Petit, Cyril Buttay, Hervé Morel. Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs |
| 1714 | -- | 1718 | O. Lazar, Jean-Guy Tartarin, Benoit Lambert, C. Moreau, J. L. Roux. Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies |
| 1719 | -- | 1723 | S. Petitdidier, F. Berthet, Y. Guhel, Jean-Lionel Trolet, P. Mary, Christophe Gaquière, Bertrand Boudart. Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs |
| 1724 | -- | 1728 | Asad Fayyaz, Alberto Castellazzi. High temperature pulsed-gate robustness testing of SiC power MOSFETs |
| 1729 | -- | 1735 | A. Bensoussan, E. Suhir, P. Henderson, M. Zahir. A unified multiple stress reliability model for microelectronic devices - Application to 1.55 μm DFB laser diode module for space validation |
| 1736 | -- | 1740 | Massimo Vanzi, Giovanna Mura, Giulia Marcello, G. Martines. Clamp voltage and ideality factor in laser diodes |
| 1741 | -- | 1745 | Pamela Del Vecchio, A. Curutchet, Yannick Deshayes, M. Bettiati, F. Laruelle, Nathalie Labat, Laurent Béchou. Correlation between forward-reverse low-frequency noise and atypical I-V signatures in 980 nm high-power laser diodes |
| 1746 | -- | 1749 | J. Michaud, G. Pedroza, Laurent Béchou, L. S. How, Olivier Gilard, David Veyrié, F. Laruelle, Stéphane Grauby. Investigations on electro-optical and thermal performances degradation of high power density GaAs-based laser diode in vacuum environment |
| 1750 | -- | 1753 | Jean-Pierre Landesman, C. Levallois, Juan Jiménez, F. Pommereau, Yoan Léger, A. Beck, Thomas Delhaye, A. Torres, C. Frigeri, A. Rhallabi. Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour |
| 1754 | -- | 1758 | Matteo Buffolo, Carlo De Santi, Matteo Meneghini, D. Rigon, Gaudenzio Meneghesso, Enrico Zanoni. Long-term degradation mechanisms of mid-power LEDs for lighting applications |
| 1759 | -- | 1764 | Raphael Baillot, Yannick Deshayes, Yves Ousten, Laurent Béchou. Photothermal activated failure mechanism in polymer-based packaging of low power InGaN/GaN MQW LED under active storage |
| 1765 | -- | 1769 | Carlo De Santi, Matteo Dal Lago, Matteo Buffolo, D. Monti, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni. Failure causes and mechanisms of retrofit LED lamps |
| 1770 | -- | 1774 | Kateryna Kiryukhina, G. Perez, E. Locatelli, H. Chauvin, E. Peis. Upscreening of LED COTS for space science applications |
| 1775 | -- | 1778 | Marco La Grassa, Matteo Meneghini, Carlo De Santi, Marco Mandurrino, Michele Goano, Francesco Bertazzi, Roland Zeisel, Bastian Galler, Gaudenzio Meneghesso, Enrico Zanoni. Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects |
| 1779 | -- | 1783 | Y. G. Yoon, J. P. Hyung, U. H. Jeong, H. W. Lim, J. S. Jang. Life time comparison of LED package and the self-ballasted LED lamps by simple linear regression analysis |
| 1784 | -- | 1789 | Miao Cai, Dao-Guo Yang, Kunmiao Tian, Ping Zhang, Xianping Chen, Lilin Liu, Guoqi Zhang. Step-stress accelerated testing of high-power LED lamps based on subsystem isolation method |
| 1790 | -- | 1794 | Nicola Wrachien, N. Lago, A. Rizzo, Riccardo D'Alpaos, Andrea Stefani, Guido Turatti, Michele Muccini, Gaudenzio Meneghesso, Andrea Cester. Effects of thermal and electrical stress on DH4T-based organic thin-film-transistors with PMMA gate dielectrics |
| 1795 | -- | 1799 | Andrea Cester, A. Rizzo, A. Bazzega, N. Lago, J. Favaro, Marco Barbato, Nicola Wrachien, S. A. Gevorgyan, M. Corazza, F. C. Krebs. Effects of constant voltage and constant current stress in PCBM: P3HT solar cells |
| 1800 | -- | 1803 | Domenico Mello, R. Ricciari, A. Battaglia, M. Foti, Cosimo Gerardi. Case study of failure analysis in thin film silicon solar cell |
| 1804 | -- | 1810 | Jae-Seong Jeong, Yong-Hyun Kim, Chang-kyun Park, Heon-Do Kim, Joongho Choi. The degradation mechanism of flexible a-Si: H/μc-Si: H photovoltaic modules |
| 1811 | -- | 1814 | Dae-Hyun Kim, Jong-Tae Park. Investigation on stress induced hump phenomenon in IGZO thin film transistors under negative bias stress and illumination |
| 1815 | -- | 1820 | Jean-Baptiste Sauveplane, P. Retho, N. Venet, David Buso, G. Perez, J. S. Lefrileux. A reliable solderless connection technique for high I/O counts ceramic land grid array package for space applications |
| 1821 | -- | 1825 | Sebastien Jacques, R. Leroy, Marc Lethiecq. 2PAK package reliability during thermal cycling applications |
| 1826 | -- | 1831 | Peter Jacob. Unusual defects, generated by wafer sawing: An update, including pick&place processing |
| 1832 | -- | 1837 | Lutz Meinshausen, Kirsten Weide-Zaage, Hélène Frémont. Dynamical IMC-growth calculation |
| 1838 | -- | 1842 | R. Alberti, Riccardo Enrici Vaion, A. Mervic, S. Testa. Metal fatigue in copper pillar Flip Chip BGA: A refined acceleration model for the aluminium pad cracking failure mechanism |
| 1843 | -- | 1848 | Lado Filipovic, Anderson Pires Singulani, Frederic Roger, Sara Carniello, Siegfried Selberherr. Intrinsic stress analysis of tungsten-lined open TSVs |
| 1849 | -- | 1854 | Samed Barnat, Alexandrine Guédon-Gracia, Hélène Frémont. Virtual prototyping in a Design-for-Reliability approach |
| 1855 | -- | 1860 | Marian Sebastian Broll, Ute Geissler, Jan Höfer, Stefan Schmitz, Olaf Wittler, Martin Schneider-Ramelow, Klaus-Dieter Lang. Correlation between mechanical properties and microstructure of different aluminum wire qualities after ultrasonic bonding |
| 1861 | -- | 1866 | T. Ishizaki, M. Usui, Y. Yamada. Thermal cycle reliability of Cu-nanoparticle joint |
| 1867 | -- | 1871 | Nantian Wang, Yue Li, Zongyue Yu, Zhi-Qian Ren. Online test method of FPGA solder joint resistance with low power consumption |
| 1872 | -- | 1876 | Kirsten Rongen, A. Mavinkurve, M. Chen, P. J. van der Wel, F. Swartjes, R. T. H. Rongen. Moisture absorption and desorption in wafer level chip scale packages |
| 1877 | -- | 1881 | Zaifu Cui, Miao Cai, Ruifeng Li, Ping Zhang, Xianping Chen, Dao-Guo Yang. A numerical procedure for simulating thermal oxidation diffusion of epoxy molding compounds |
| 1882 | -- | 1885 | M. F. M. Sabri, N. I. M. Nordin, S. M. Said, N. A. A. M. Amin, Hamzah Arof, I. Jauhari, Roziana Ramli, Kirsten Weide-Zaage. Effect of thermal aging on the electrical resistivity of Fe-added SAC105 solder alloys |
| 1886 | -- | 1890 | M. H. Mahdavifard, M. F. M. Sabri, Dhafer Abdulameer Shnawah, S. M. Said, Irfan Anjum Badruddin, S. Rozali. The effect of iron and bismuth addition on the microstructural, mechanical, and thermal properties of Sn-1Ag-0.5Cu solder alloy |
| 1891 | -- | 1895 | Loukas Michalas, Matroni Koutsoureli, E. Papandreou, F. Giacomozzi, George J. Papaioannou. Dielectric charging effects in floating electrode MEMS capacitive switches |
| 1896 | -- | 1900 | Sebastian Orellana, B. Arrazat, P. Fornara, C. Rivero, S. Blayac, Pierre Montmitonnet, Karim Inal. Robust design of thermo-mechanical MEMS switch embedded in aluminium BEOL interconnect |
| 1901 | -- | 1905 | Michael Elßner, Holger Vogt. Failure mechanisms of microbolometer thermal imager sensors using chip-scale packaging |
| 1906 | -- | 1910 | Alessandro Cazzorla, P. Farinelli, R. Sorrentino, B. Margesin. Reliability test of a RF MEMS varactor based on a double actuation mechanism |
| 1911 | -- | 1915 | Matroni Koutsoureli, Loukas Michalas, E. Papandreou, George J. Papaioannou. x dielectric films used in RF MEMS capacitive switches |
| 1916 | -- | 1919 | K. Melendez, A. Desmoulin, Kevin Sanchez, Philippe Perdu, Dean Lewis. A way to implement the electro-optical technique to inertial MEMS |
| 1920 | -- | 1925 | Radoslav Rusanov, H. Rank, J. Graf, T. Fuchs, R. Mueller-Fiedler, O. Kraft. 2 insulation layers and membranes |
| 1926 | -- | 1931 | Manuel Domínguez Pumar, Sergi Gorreta, Joan Pons-Nin, Faustino Gómez Rodríguez, Diego González Castaño. Charge induced by ionizing radiation understood as a disturbance in a sliding mode control of dielectric charge |
| 1932 | -- | 1937 | Takashi Setoya, Tsuneo Ogura, Wataru Saito, Tomoko Matsudai, Koichi Endo. Destruction failure analysis and international reliability test standard for power devices |
| 1938 | -- | 1944 | Christoph H. van der Broeck, Marcus Conrad, Rik W. De Doncker. A thermal modeling methodology for power semiconductor modules |
| 1945 | -- | 1949 | Pramod Ghimire, Kristian Bonderup Pedersen, Bjørn Rannestad, Stig Munk-Nielsen. Ageing monitoring in IGBT module under sinusoidal loading |
| 1950 | -- | 1955 | Paula Diaz Reigosa, Rui Wu, Francesco Iannuzzo, Frede Blaabjerg. Robustness of MW-Level IGBT modules against gate oscillations under short circuit events |
| 1956 | -- | 1960 | William Sanfins, D. Risaletto, F. Richardeau, G. Blondel, M. Chemin, P. Baudesson. Preliminary failure-mode characterization of emerging direct-lead-bonding power module. Comparison with standard wire-bonding interconnection |
| 1961 | -- | 1965 | Eric Woirgard, F. Arabi, Wissam Sabbah, D. Martineau, L. Théolier, Stephane Azzopardi. Identification and analysis of power substrates degradations subjected to severe aging tests |
| 1966 | -- | 1970 | R. Ruffilli, Mounira Berkani, Philippe Dupuy, Stéphane Lefebvre, Y. Weber, Marc Legros. In-depth investigation of metallization aging in power MOSFETs |
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| 1976 | -- | 1980 | Hiroshi Suzuki, Mauro Ciappa. TCAD simulation of current filamentation in adjacent IGBT cells under turn-on and turn-off short circuit condition |
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| 1992 | -- | 1996 | Marcus Conrad, A. Diatlov, Rik W. De Doncker. Purpose, potential and realization of chip-attached micro-pin fin heat sinks |
| 1997 | -- | 2002 | Toni Youssef, W. Rmili, E. Woirgard, Stephane Azzopardi, N. Vivet, D. M. Meekhof, Régis Meuret, G. Le Quilliec, C. Richard. Power modules die attach: A comprehensive evolution of the nanosilver sintering physical properties versus its porosity |
| 2003 | -- | 2006 | Yannis Belfort, J.-M. Caignard, S. Keller, J. P. Guerveno. Failures on DC-DC modules following a change of wire bonding material from gold to copper |
| 2007 | -- | 2011 | Huai Wang, Dennis A. Nielsen, Frede Blaabjerg. Degradation testing and failure analysis of DC film capacitors under high humidity conditions |
| 2012 | -- | 2016 | Maawad Makdessi, Ali Sari, Pascal Venet, G. Aubard, F. Chevalier, R. Préseau, T. Doytchinov, J. Duwattez. Lifetime estimation of high-temperature high-voltage polymer film capacitor based on capacitance loss |
| 2017 | -- | 2021 | Houssam Arbess, F. Baccar, L. Théolier, Stephane Azzopardi, Eric Woirgard. 2 using BenzoCycloButene as dielectric material |
| 2022 | -- | 2026 | Uimin Choi, Frede Blaabjerg, Francesco Iannuzzo, S. Jørgensen. Junction temperature estimation method for a 600 V, 30A IGBT module during converter operation |
| 2027 | -- | 2031 | Ronan German, Ali Sari, Pascal Venet, Olivier Briat, Jean-Michel Vinassa. Study on specific effects of high frequency ripple currents and temperature on supercapacitors ageing |
| 2032 | -- | 2035 | Akihiko Watanabe, Masanori Tsukuda, Ichiro Omura. Failure analysis of power devices based on real-time monitoring |
| 2036 | -- | 2040 | Paolo Cova, Nicola Delmonte, D. Chiozzi. Numerical analysis and experimental tests for solder joints power cycling optimization |
| 2041 | -- | 2044 | M. A. Belaïd. Impact of hot carrier injection on switching time evolution for power RF LDMOS after accelerated tests |
| 2045 | -- | 2049 | M. Haussener, S. Caihol, Baptiste Trajin, P. E. Vidal, F. Carrillo. Thermomechanical modeling and simulation of a silicone gel for power electronic devices |
| 2050 | -- | 2054 | H. Huang, Alexandre Boyer, Sonia Ben Dhia. Electronic counterfeit detection based on the measurement of electromagnetic fingerprint |
| 2055 | -- | 2060 | Tristan Dubois, S. Hairoud, M. H. Gomes de Oliveira, Hélène Frémont, Geneviève Duchamp. Characterization and model of temperature effect on the conducted immunity of Op-Amp |
| 2061 | -- | 2066 | He Huang, Alexandre Boyer, Sonia Bendhia. Analysis and modeling of passive device degradation for a long-term electromagnetic emission study of a DC-DC converter |
| 2067 | -- | 2071 | Ala Ayed, Tristan Dubois, Jean-Luc Levant, Geneviève Duchamp. Failure mechanism study and immunity modeling of an embedded analog-to-digital converter based on immunity measurements |
| 2072 | -- | 2076 | Iuri A. C. Gomes, Mayler G. A. Martins, André Inácio Reis, Fernanda Lima Kastensmidt. Exploring the use of approximate TMR to mask transient faults in logic with low area overhead |
| 2077 | -- | 2081 | Raphael Segabinazzi Ferreira, Fabian Vargas. ShadowStack: A new approach for secure program execution |
| 2082 | -- | 2086 | Dawei Pan, Datong Liu, Jun Zhou, Guoyong Zhang. Anomaly detection for satellite power subsystem with associated rules based on Kernel Principal Component Analysis |
| 2087 | -- | 2091 | Luca Sterpone, B. Du, S. Azimi. Radiation-induced single event transients modeling and testing on nanometric flash-based technologies |
| 2092 | -- | 2096 | Liansheng Liu, Shaojun Wang, Datong Liu, Yujie Zhang, Yu Peng. Entropy-based sensor selection for condition monitoring and prognostics of aircraft engine |
| 2097 | -- | 2102 | A. Durier, A. Bensoussan, M. Zerarka, C. Ghfiri, A. Boyer, Hélène Frémont. A methodologic project to characterize and model COTS component reliability |
| 2103 | -- | 2107 | J. Vanhamel, D. Fussen, E. Dekemper, E. Neefs, B. Van Opstal, D. Pieroux, J. Maes, E. Van Lil, P. Leroux. RF-driving of acoustic-optical tunable filters; design, realization and qualification of analog and digital modules for ESA |
| 2108 | -- | 2112 | A. Ahilan, P. Deepa. Design for built-in FPGA reliability via fine-grained 2-D error correction codes |
| 2113 | -- | 2118 | Dae-Hyun Kim, Soonyoung Cha, Linda S. Milor. Built-in self-test for bias temperature instability, hot-carrier injection, and gate oxide breakdown in embedded DRAMs |
| 2119 | -- | 2125 | Andriy Lotnyk, D. Poppitz, U. Ross, J. W. Gerlach, F. Frost, S. Bernütz, E. Thelander, B. Rauschenbach. Focused high- and low-energy ion milling for TEM specimen preparation |
| 2126 | -- | 2130 | Emanuela Ricci, F. Cazzaniga, S. Testai. TEM sample preparation of a SEM cross section using electron beam induced deposition of carbon |
| 2131 | -- | 2134 | O. A. Ageev, Alexey S. Kolomiytsev, A. V. Bykov, V. A. Smirnov, I. N. Kots. Fabrication of advanced probes for atomic force microscopy using focused ion beam |
| 2135 | -- | 2141 | Audrey Garnier, G. Filoni, T. Hrncír, L. Hladík. Plasma FIB: Enlarge your field of view and your field of applications |
| 2142 | -- | 2146 | Andrzej Czerwinski, Mariusz Pluska, Adam Laszcz, Jacek Ratajczak, Kamil Pierscinski, Dorota Pierscinska, Piotr Gutowski, Piotr Karbownik, Maciej Bugajski. Formation of coupled-cavities in quantum cascade lasers using focused ion beam milling |
| 2147 | -- | 2153 | Jean-Luc Autran, Daniela Munteanu. Radiation and COTS at ground level |
| 2154 | -- | 2158 | Peter Jacob. Failure analysis and reliability on system level |
| 2159 | -- | 2164 | Gert Vogel. Avoiding flex cracks in ceramic capacitors: Analytical tool for a reliable failure analysis and guideline for positioning cercaps on PCBs |
| 2165 | -- | 2171 | Andrew J. Wileman, Suresh Perinpanayagam. Integrated vehicle health management: An approach to dealing with lifetime prediction considerations on relays |