| 1351 | -- | 1352 | Nathalie Labat, André Touboul. Editorial |
| 1353 | -- | 1360 | James H. Stathis, Barry P. Linder, R. Rodríguez, Salvatore Lombardo. Reliability of ultra-thin oxides in CMOS circuits |
| 1361 | -- | 1367 | D. Dufourt, J. L. Pelloie. SOI design challenges |
| 1369 | -- | 1375 | Lawrence C. Wagner. Trends in Failure Analysis |
| 1377 | -- | 1382 | A. Andreini, C. Neva, L. Renard, G. Sironi, F. Speroni, L. Sponton, F. Tampellini, R. Tiziani. Pad Over Active (POA) solutions for three metal level BCD5 mixed power process - Design and validation of ESD protections |
| 1383 | -- | 1387 | Th. Nirschl, M. Ostermayr, A. Olbrich, D. Vietzke, M. Omer, C. Linnenbank, U. Schaper, Y. Pottgiesser, J. Pottgiesser, M. Johansson. MALTY--A memory test structure for analysis in the early phase of the technology development |
| 1389 | -- | 1393 | G. Aichmayr. Correlation of gate oxide reliability and product tests on leading edge DRAM technology |
| 1395 | -- | 1400 | A. Aal. A procedure for reliability control and optimization of mixed-signal smart power CMOS pocesses |
| 1401 | -- | 1404 | P. Charpenel, F. Davenel, R. Digout, M. Giraudeau, M. Glade, J. P. Guerveno, N. Guillet, A. Lauriac, S. Male, D. Manteigas. The right way to assess electronic system reliability: FIDES |
| 1405 | -- | 1410 | Yong-Ha Song, S. G. Kim, S. B. Lee, K. J. Rhee, T.-S. Kim. A study of considering the reliability issues on ASIC/Memory integration by SIP (System-in-Package) technology |
| 1411 | -- | 1416 | G. Cassanelli, Fausto Fantini, G. Serra, S. Sgatti. Reliability in automotive electronics: a case study applied to diesel engine control |
| 1417 | -- | 1426 | Gerald Lucovsky. Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects |
| 1427 | -- | 1432 | Jong-Tae Park, Nag Jong Choi, Chong-Gun Yu, Seok Hee Jeon, Jean-Pierre Colinge. Increased hot carrier effects in Gate-All-Around SOI nMOSFET s |
| 1433 | -- | 1438 | M. Fadlallah, C. Petit, A. Meinertzhagen, G. Ghibaudo, M. Bidaud, O. Simonetti, F. Guyader. Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices |
| 1439 | -- | 1444 | R. Rodríguez, James H. Stathis, Barry P. Linder, Rajiv V. Joshi, Ching-Te Chuang. Influence and model of gate oxide breakdown on CMOS inverters |
| 1445 | -- | 1448 | F. Lime, G. Ghibaudo, B. Guillaumot. Charge trapping in SiO2/HfO2/TiN gate stack |
| 1449 | -- | 1454 | Yuan Li, Klaas Jelle Veenstra, Jerôme Dubois, Lei Peters-Wu, Agnes van Zomeren, Fred G. Kuper. Reservoir effect and maximum allowed VIA misalignment for AlCu interconnect with tungsten VIA plug |
| 1455 | -- | 1460 | S. Djoric-Veljkovic, I. Manic, V. Davidovic, S. Golubovic, Ninoslav Stojadinovic. Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs |
| 1461 | -- | 1464 | Young-Pil Kim, U-In Chung, Joo Tae Moon, Sang U. Kim. Electrical analysis of DRAM cell transistors for the root-cause addressing of the tRDL time-delay failure |
| 1465 | -- | 1470 | Werner Frammelsberger, Guenther Benstetter, Thomas Schweinboeck, Richard J. Stamp, Janice Kiely. Characterization of thin and ultra-thin SiO::2:: films and SiO::2::/Si interfaces with combined conducting and topographic atomic force microscopy |
| 1471 | -- | 1476 | K. L. Pey, C. H. Tung, M. K. Radhakrishnan, L. J. Tang, Y. Sun, X. D. Wang, W. H. Lin. Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM |
| 1477 | -- | 1482 | Se Re Na Yun, Won Sub Park, Byung Ha Lee, Jong-Tae Park. Hot electron induced punchthrough voltage of p-channel SOI MOSFET s at room and elevated temperatures |
| 1483 | -- | 1488 | S. Aresu, Ward De Ceuninck, G. Knuyt, J. Mertens, J. Manca, Luc De Schepper, Robin Degraeve, Ben Kaczer, Marc D Olieslaeger, Jan D Haen. A new method for the analysis of high-resolution SILC data |
| 1489 | -- | 1493 | D. Zander, F. Saigné, A. Meinertzhagen, C. Petit. Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices |
| 1495 | -- | 1500 | Andreas Gehring, F. Jiménez-Molinos, Hans Kosina, A. Palma, F. Gámiz, Siegfried Selberherr. Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices |
| 1501 | -- | 1505 | M. Porti, M. Nafría, X. Aymerich. Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM |
| 1507 | -- | 1512 | Joachim C. Reiner. Pre-breakdown leakage current fluctuations of thin gate oxide |
| 1513 | -- | 1518 | B. Mongellaz, F. Marc, Y. Danto. Ageing simulation of MOSFET circuit using a VHDL-AMS behavioural modelling: an experimental case study |
| 1519 | -- | 1523 | D. Faure, D. Bru, C. Ali, C. Giret, K. Christensen. Gate oxide breakdown characterization on 0.13mum CMOS technology |
| 1525 | -- | 1529 | Jan Ackaert, Klara Bessemans, Eddy De Backer. Charging induced damage by photoconduction through thick inter metal dielectrics |
| 1531 | -- | 1535 | Hamid Toutah, Boubekeur Tala-Ighil, Jean-François Llibre, B. Boudart, Taieb Mohammed-Brahim, Olivier Bonnaud. Degradation in polysilicon thin film transistors related to the quality of the polysilicon material |
| 1537 | -- | 1543 | S. Trinh, Markus P. J. Mergens, Koen G. Verhaege, Christian C. Russ, John Armer, Phillip Jozwiak, Bart Keppens, Russ Mohn, G. Taylor, Frederic De Ranter. Multi-finger turn-on circuits and design techniques for enhanced ESD performance and width scaling |
| 1545 | -- | 1550 | Masashi Hayashi, Shinji Nakano, Tetsuaki Wada. Dependence of copper interconnect electromigration phenomenon on barrier metal materials |
| 1551 | -- | 1556 | M. Zecri, P. Besse, P. Givelin, M. Nayrolles, M. Bafleur, N. Nolhier. Determination of the ESD Failure Cause Through its Signature |
| 1557 | -- | 1561 | V. Dubec, Scrgey Bychikhin, M. Blaho, Dionyz Pogany, E. Gornik, J. Willemen, N. Qu, Wolfgang Wilkening, L. Zullino, A. Andreini. A dual-beam Michelson interferometer for investigation of trigger dynamics in ESD protection devices under very fast TLP stress |
| 1563 | -- | 1568 | Abdellatif Firiti, D. Faujour, G. Haller, J. M. Moragues, V. Goubier, Philippe Perdu, Felix Beaudoin, D. Lewis. Short defect characterization based on TCR parameter extraction |
| 1569 | -- | 1575 | M. S. B. Sowariraj, Theo Smedes, Cora Salm, Ton J. Mouthaan, Fred G. Kuper. Role of package parasitics and substrate resistance on the Charged Device Model (CDM) failure levels -An explanation and die protection strategy |
| 1577 | -- | 1582 | T. Beauchêne, D. Trémouilles, D. Lewis, Philippe Perdu, Pascal Fouillat. Characterization of ESD induced defects using Photovoltaic Laser Stimulation (PLS) |
| 1583 | -- | 1588 | Wen-Yu Lo, Ming-Dou Ker. Analysis and Prevention on NC-ball induced ESD Damages in a 683-Pin BGA Packaged Chipset IC |
| 1589 | -- | 1594 | Gaudenzio Meneghesso, N. Novembre, Enrico Zanoni, L. Sponton, L. Cerati, G. Croce. Optimization of ESD protection structures suitable for BCD6 smart power technology |
| 1595 | -- | 1602 | J. C. H. Phang, D. S. H. Chan, V. K. S. Ong, S. Kolachina, J. M. Chin, M. Palaniappan, G. Gilfeather, Y. X. Seah. Single contact beam induced current phenomenon for microelectronic failure analysis |
| 1603 | -- | 1608 | Franco Stellari, Peilin Song, Moyra K. McManus, Alan J. Weger, Robert Gauthier, Kiran V. Chatty, Mujahid Muhammad, Pia Sanda, Philip Wu, Steve Wilson. Latchup Analysis Using Emission Microscopy |
| 1609 | -- | 1613 | Stefan Dilhaire, M. Amine Salhi, Stéphane Grauby, Wilfrid Claeys. Laser Seebeck Effect Imaging (SEI) and Peltier Effect Imaging (PEI): complementary investigation methods |
| 1615 | -- | 1619 | F. Darracq, Hervé Lapuyade, N. Buard, Pascal Fouillat, R. Dufayel, T. Carriere. Low-cost backside laser test method to pre-characterize the COTS IC s sensitivity to Single Event Effects |
| 1621 | -- | 1626 | P. LeCoupanec, William K. Lo, Keneth R. Wilsher. An ultra-low dark-count and jitter, superconducting, single-photon detector for emission timing analysis of integrated circuits |
| 1627 | -- | 1631 | Katsuyoshi Miura, Tomoyuki Kobatake, Koji Nakamae, Hiromu Fujioka. A low energy FIB processing, repair, and test system |
| 1633 | -- | 1638 | F. Seifert, R. Weber, W. Mertin, E. Kubalek. A new technique for contactless current contrast imaging of high frequency signals |
| 1639 | -- | 1644 | M. Remmach, Romain Desplats, Felix Beaudoin, E. Frances, Philippe Perdu, D. Lewis. Time Resolved Photoemission (PICA) - From the Physics to Practical Considerations |
| 1645 | -- | 1650 | Hervé Deslandes, T. R. Lundquist. Limitations to photon-emission microscopy when applied to hot devices |
| 1651 | -- | 1656 | Maria Stangoni, Mauro Ciappa, Wolfgang Fichtner. A New Procedure to Define the Zero-Field Condition and to Delineate pn-Junctions in Silicon Devices by Scanning Capacitance Microscopy |
| 1657 | -- | 1662 | L. A. Knauss, A. Orozco, S. I. Woods, A. B. Cawthorne. Advances in scanning SQUID microscopy for die-level and package-level fault isolation |
| 1663 | -- | 1668 | Romain Desplats, A. Eral, Felix Beaudoin, Philippe Perdu, Alan J. Weger, Moyra K. McManus, Peilin Song, Franco Stellari. Faster IC Analysis with PICA Spatial Temporal Photon Correlation and CAD Autochanneling |
| 1669 | -- | 1674 | Alberto Tosi, Franco Stellari, F. Zappa, S. Cova. Backside Flip-Chip testing by means of high-bandwidth luminescence detection |
| 1675 | -- | 1680 | B. Simmnacher, R. Weiland, J. Höhne, F. v. Feilitzsch, C. Hollerith. Semiconductor material analysis based on microcalorimeter EDS |
| 1681 | -- | 1686 | Felix Beaudoin, Romain Desplats, Philippe Perdu, Abdellatif Firiti, G. Haller, V. Pouget, D. Lewis. From Static Thermal and Photoelectric Laser Stimulation (TLS/PLS) to Dynamic Laser Testing |
| 1687 | -- | 1692 | Jon C. Lee, J. H. Chuang. A Novel Application of C-AFM: Deep Sub-micron Single Probing for IC Failure Analysis |
| 1693 | -- | 1698 | Paul-Henri Albarède, S. Lavagne, C. Grosjean. Strain investigation around shallow trench isolations : a LACBED Study |
| 1705 | -- | 1712 | S. L. Delage, C. Dua. Wide band gap semiconductor reliability : Status and trends |
| 1713 | -- | 1718 | A. Curutchet, N. Malbert, N. Labat, A. Touboul, C. Gaquière, A. Minko, M. Uren. Low frequency drain noise comparison of AlGaN/GaN HEMT s grown on silicon, SiC and sapphire substrates |
| 1719 | -- | 1723 | J. Kuchenbecker, M. Borgarino, M. Zeuner, U. König, R. Plana, Fausto Fantini. High Electric Field Induced Degradation of the DC Characteristics in Si/SiGe HEMT s |
| 1725 | -- | 1730 | J. C. Martin, C. Maneux, N. Labat, A. Touboul, Muriel Riet, S. Blayac, M. Kahn, Jean Godin. 1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses |
| 1731 | -- | 1736 | M. Belhaj, C. Maneux, N. Labat, A. Touboul, P. Bove. High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects |
| 1737 | -- | 1742 | Gaudenzio Meneghesso, S. Levada, Enrico Zanoni, G. Scamarcio, G. Mura, Simona Podda, Massimo Vanzi, S. Du, I. Eliashevich. Reliability of visible GaN LEDs in plastic package |
| 1743 | -- | 1749 | L. Mendizabal, Jean-Louis Verneuil, L. Béchou, Christelle Aupetit-Berthelemot, Y. Deshayes, F. Verdier, Jean-Michel Dumas, Y. Danto, D. Laffitte, J. L. Goudard. Impact of 1.55 mum laser diode degradation laws on fibre optic system performances using a system simulator |
| 1751 | -- | 1754 | J. Van de Casteele, D. Laffitte, G. Gelly, C. Starck, M. Bettiati. High reliability level demonstrated on 980nm laser diode |
| 1755 | -- | 1760 | Kevin Sanchez, Romain Desplats, G. Perez, V. Pichetto, Felix Beaudoin, Philippe Perdu. Solar Cell Analysis with Light Emission and OBIC Techniques |
| 1761 | -- | 1766 | C. Gautier, J. Périnet, E. Nissou, D. Laffitte. New method of qualification applied to optical amplifier with electronics |
| 1767 | -- | 1769 | J. L. Goudard, X. Boddaert, J. Périnet, D. Laffitte. Reliability of optoelectronics components: towards new qualification practices |
| 1771 | -- | 1776 | G. Mura, Massimo Vanzi, Maria Stangoni, Mauro Ciappa, Wolfgang Fichtner. On the behaviour of the selective iodine-based gold etch for the failure analysis of aged optoelectronic devices |
| 1777 | -- | 1783 | G. Q. Zhang. The challenges of virtual prototyping and qualification for future microelectronics |
| 1785 | -- | 1790 | P. Soussan, G. Lekens, R. Dreesen, Ward De Ceuninck, E. Beyne. Advantage of In-situ over Ex-situ techniques as reliability tool: Aging kinetics of Imec s MCM-D discrete passives devices |
| 1791 | -- | 1796 | P. Tropea, A. Mellal, J. Botsis. Deformation and damage of a solder-copper joint |
| 1797 | -- | 1801 | A. B. Horsfall, J. M. M. dos Santos, S. M. Soare, N. G. Wright, A. G. O Neill, S. J. Bull, A. J. Walton, A. M. Gundlach, J. T. M. Stevenson. Direct measurement of residual stress in integrated circuit interconnect features |
| 1803 | -- | 1807 | G. Andriamonje, V. Pouget, Y. Ousten, D. Lewis, Y. Danto, J. M. Rampnoux, Y. Ezzahri, Stefan Dilhaire, Stéphane Grauby, Wilfrid Claeys. Application of Picosecond Ultrasonics to Non-Destructive Analysis in VLSI circuits |
| 1809 | -- | 1814 | O. Crépel, Romain Desplats, Y. Bouttement, Philippe Perdu, C. Goupil, Ph. Descamps, Felix Beaudoin, L. Marina. Magnetic emission mapping for passive integrated components characterisation |
| 1815 | -- | 1820 | P. Rajamand, R. Tilgner, R. Schmidt, J. Baumann, P. Klofac, M. Rothenfusser. Investigation of delaminations during thermal stress: scanning acoustic microscopy covering low and high temperatures |
| 1821 | -- | 1826 | David Dalleau, Kirsten Weide-Zaage, Yves Danto. Simulation of time depending void formation in copper, aluminum and tungsten plugged via structures |
| 1827 | -- | 1831 | M. Krüger, J. Krinke, K. Ritter, B. Zierle, M. Weber. Laser-assisted decapsulation of plastic-encapsulated devices |
| 1833 | -- | 1838 | G. Lefranc, B. Weiss, C. Klos, J. Dick, G. Khatibi, H. Berg. Aluminum bond-wire properties after 1 billion mechanical cycles |
| 1839 | -- | 1846 | W. Kanert, H. Dettmer, B. Plikat, N. Seliger. Reliability aspects of semiconductor devices in high temperature applications |
| 1847 | -- | 1851 | F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Sanseverino, A. Candelori, G. Curro, A. Cascio, F. Frisina. Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment |
| 1853 | -- | 1858 | Alexandrine Guédon, Eric Woirgard, Christian Zardini, Guillaume Simon. Methodology to evaluate the correspondence between real conditions and accelerated tests of a thyristor system used in a power plant |
| 1859 | -- | 1864 | E. Hornung, U. Scheuermann. Reliability of low current electrical spring contacts in power modules |
| 1865 | -- | 1869 | Yannick Rey-Tauriac, O. de Sagazan, M. Taurin, Olivier Bonnaud. Robustness improvement of VDMOS transistors in Bipolar/CMOS/DMOS technology |
| 1871 | -- | 1876 | G. Coquery, G. Lefranc, T. Licht, R. Lallemand, N. Seliger, H. Berg. High temperature reliability on automotive power modules verified by power cycling tests up to 150degreeC |
| 1877 | -- | 1882 | Alberto Castellazzi, V. Kartal, R. Kraus, N. Seliger, Martin Honsberg-Riedl, Doris Schmitt-Landsiedel. Hot-Spot Meaurements and Analysis of Electro-Thermal Effects in Low-Voltage Power-MOSFET s |
| 1883 | -- | 1888 | J. Vobecký, P. Hazdra. Advanced Local Lifetime Control for Higher Reliability of Power Devices |
| 1889 | -- | 1894 | T. Ayalew, Andreas Gehring, J. M. Park, Tibor Grasser, Siegfried Selberherr. Improving SiC lateral DMOSFET reliability under high field stress |
| 1895 | -- | 1900 | A. Icaza Deckelmann, Gerhard K. M. Wachutka, F. Hirler, J. Krumrey, R. Henninger. Avalanche breakdown capability of Power DMOS Transistors and the Wunsch-Bell relation |
| 1901 | -- | 1906 | S. Azzopardi, E. Woirgard, J.-M. Vinassa, O. Briat, C. Zardini. IGBT Power modules thermal characterization : what is the optimum between a low current - high voltage or a high current - low voltage test condition for the same electrical power? |
| 1907 | -- | 1912 | G. Busatto, F. Iannuzzo, F. Velardi, M. Valentino, G. P. Pepe. Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement |
| 1913 | -- | 1918 | K. I. Nuttall, O. Buiu, V. V. N. Obreja. Surface leakage current related failure of power silicon devices operated at high junction temperature |
| 1919 | -- | 1928 | L. Buchaillot. Feedback of MEMS reliability study on the design stage: a step toward Reliability Aided Design (RAD) |
| 1929 | -- | 1933 | Cezary Sydlo, K. Mutamba, L. Divac Krnic, Bastian Mottet, Hans L. Hartnagel. Reliability studies on integrated GaAs power-sensor structures using pulsed electrical stress |
| 1935 | -- | 1937 | I. Boyer Heard, R. Coquillé, D. Rivière, P.-Y. Klimonda. Characterization and reliability of a switch matrix based on MOEMS technology |
| 1939 | -- | 1944 | A. Tetelin, C. Pellet, J.-Y. Delétage, B. Carbonne, Y. Danto. Moisture diffusion in BCB resins used for MEMS packaging |
| 1945 | -- | 1949 | Sylvaine Muratet, Jean-Yves Fourniols, G. Soto-Romero, Aitor Endemaño Isasi, A. Marty, Marc P. Y. Desmulliez. MEMS reliability modelling methodology: application to wobble micromotor failure analysis |
| 1951 | -- | 1955 | Guillaume Marinier, Stefan Dilhaire, Luis David Patiño Lopez, Mohamed Benzohra. Determination of passive SiO::2::-Au microstructure resonant frequencies |
| 1957 | -- | 1962 | Petra Schmitt, Francis Pressecq, Xavier Lafontan, Q.-H. Duong, Patrick Pons, Jean Marc Nicot, Coumar Oudéa, Daniel Estève, Jean-Yves Fourniols, Henri Camon. Application of MEMS behavioral simulation to Physics of Failure (PoF) modeling |
| 1963 | -- | 1968 | Sebastien Rigo, Phillippe Goudeau, Jean-Michel Desmarres, Talal Masri, Jacques-Alain Petit, Petra Schmitt. Correlation between X-ray micro-diffraction and a developed analytical model to measure the residual stresses in suspended structures in MEMS |