| 1423 | -- | 1424 | Nathalie Labat, François Marc. Editorial |
| 1425 | -- | 1439 | V. Huard, N. Ruiz Amador, F. Cacho, E. Pion. A bottom-up approach for System-On-Chip reliability |
| 1440 | -- | 1448 | Jiann Min Chin, Vinod Narang, Xiaole Zhao, Meng Yeow Tay, Angeline Phoa, Venkat Ravikumar, Lwin Hnin Ei, Soon Huat Lim, Chea Wei Teo, Syahirah Zulkifli, Mei Chyn Ong, Ming Chuan Tan. Fault isolation in semiconductor product, process, physical and package failure analysis: Importance and overview |
| 1449 | -- | 1453 | Hao Cai, Hervé Petit, Jean-François Naviner. Reliability aware design of low power continuous-time sigma-delta modulator |
| 1454 | -- | 1458 | Weisheng Zhao, T. Devolder, Yahya Lakys, Jacques-Olivier Klein, Claude Chappert, Pascale Mazoyer. Design considerations and strategies for high-reliable STT-MRAM |
| 1459 | -- | 1463 | Lirida A. B. Naviner, Jean-François Naviner, G. G. dos Santos Jr., E. Crespo Marques, N. M. Paiva Jr.. FIFA: A fault-injection-fault-analysis-based tool for reliability assessment at RTL level |
| 1464 | -- | 1468 | Olivia Bluder, Michael Glavanovics, Jürgen Pilz. Applying Bayesian mixtures-of-experts models to statistical description of smart power semiconductor reliability |
| 1469 | -- | 1473 | Jochen Schleifer, Thomas Coenen, Tobias G. Noll. Statistical modeling of reliability in logic devices |
| 1474 | -- | 1478 | Yuan Li, Romain Delangle, Xiao-mei Zhang, Bart Hovens. Reliability assessment on new reprogrammable non-volatile memory devices based on SiCr-O |
| 1479 | -- | 1483 | Mauro Ciappa, Luigi Mangiacapra, Maria Stangoni, Stephan Ott, Wolfgang Fichtner. Design of optimum electron beam irradiation processes for the reliability of electric cables used in critical applications |
| 1484 | -- | 1488 | Daniel Siemaszko, Serge Pittet. Impact of modularity and redundancy in optimising the reliability of power systems that include a large number of power converters |
| 1489 | -- | 1492 | Tian Ban, Lirida A. B. Naviner. Progressive module redundancy for fault-tolerant designs in nanoelectronics |
| 1493 | -- | 1497 | Jean-Baptiste Gros, Geneviève Duchamp, Jean-Luc Levant, Christian Marot. Control of the electromagnetic compatibility: An issue for IC reliability |
| 1498 | -- | 1502 | Jinhui Wang, Na Gong, Ligang Hou, Xiaohong Peng, Ramalingam Sridhar, Wuchen Wu. t CMOS circuits under P-V-T fluctuations |
| 1503 | -- | 1507 | Marcantonio Catelani, Lorenzo Ciani, V. Luongo. A simplified procedure for the analysis of Safety Instrumented Systems in the process industry application |
| 1508 | -- | 1514 | F. Arnaud, L. Pinzelli, C. Gallon, M. Rafik, P. Mora, Frédéric Boeuf. Challenges and opportunity in performance, variability and reliability in sub-45 nm CMOS technologies |
| 1515 | -- | 1520 | Ru Huang, Runsheng Wang, Changze Liu, LiangLiang Zhang, Jing Zhuge, Yu Tao, Jinbin Zou, Yuchao Liu, Yangyuan Wang. HCI and NBTI induced degradation in gate-all-around silicon nanowire transistors |
| 1521 | -- | 1524 | P. C. Feijoo, M. Cho, M. Togo, E. San Andrés, Guido Groeseneken. Positive bias temperature instabilities on sub-nanometer EOT FinFETs |
| 1525 | -- | 1529 | Stanislav Tyaginov, Ivan Starkov, Hubert Enichlmair, C. Jungemann, Jong Mun Park, E. Seebacher, R. L. de Orio, Hajdin Ceric, Tibor Grasser. An analytical approach for physical modeling of hot-carrier induced degradation |
| 1530 | -- | 1534 | Gregor Pobegen, Thomas Aichinger, Tibor Grasser, Michael Nelhiebel. Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs |
| 1535 | -- | 1539 | E. Miranda, C. Mahata, T. Das, C. K. Maiti. An extension of the Curie-von Schweidler law for the leakage current decay in MIS structures including progressive breakdown |
| 1540 | -- | 1543 | Ivica Manic, Danijel Dankovic, Aneta Prijic, Vojkan Davidovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Zoran Prijic, Ninoslav Stojadinovic. NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions |
| 1544 | -- | 1546 | Seung Min Lee, Dong-Hun Lee, Jae Ki Lee, Jong-Tae Park. Concurrent PBTI and hot carrier degradation in n-channel MuGFETs |
| 1547 | -- | 1550 | Jin Young Kim, Chong-Gun Yu, Jong-Tae Park. Effects of device layout on the drain breakdown voltages in MuGFETs |
| 1551 | -- | 1556 | M. A. Belaïd, M. Gares, K. Daoud, Ph. Eudeline. S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects |
| 1557 | -- | 1560 | B. Li, N. Berbel, Alexandre Boyer, Sonia Bendhia, Raúl Fernández-García. Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences |
| 1561 | -- | 1563 | Y. Joly, Laurent Lopez, Jean Michel Portal, Hassen Aziza, Jean-Luc Ogier, Y. Bert, F. Julien, Pascal Fornara. Matching degradation of threshold voltage and gate voltage of NMOSFET after Hot Carrier Injection stress |
| 1564 | -- | 1567 | N. Berbel, Raúl Fernández-García, Ignacio Gil, B. Li, Alexandre Boyer, Sonia Bendhia. Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout |
| 1568 | -- | 1572 | V. M. Dwyer. Analysis of critical-length data from Electromigration failure studies |
| 1573 | -- | 1577 | R. L. de Orio, Hajdin Ceric, Siegfried Selberherr. A compact model for early electromigration failures of copper dual-damascene interconnects |
| 1578 | -- | 1581 | M. Lofrano, K. Croes, Ingrid De Wolf, C. J. Wilson. Influence of test structure design on stress-induced-voiding using an experimentally validated Finite Element Modeling approach |
| 1582 | -- | 1586 | Muhammad Bashir, Linda Milor, Dae-Hyun Kim, Sung Kyu Lim. Impact of irregular geometries on low-k dielectric breakdown |
| 1587 | -- | 1591 | Irina Bauer, Kirsten Weide-Zaage, Lutz Meinshausen. Influence of air gaps on the thermal-electrical-mechanical behavior of a copper metallization |
| 1592 | -- | 1596 | Dionyz Pogany, Sergey Bychikhin, Michael Heer, W. Mamanee, Erich Gornik. Application of transient interferometric mapping method for ESD and latch-up analysis |
| 1597 | -- | 1601 | P. Besse, K. Abouda, C. Abouda. Identifying electrical mechanisms responsible for functional failures during harsh external ESD and EMC aggression |
| 1602 | -- | 1607 | Augusto Tazzoli, Isabella Rossetto, Enrico Zanoni, Dai Yufeng, Tiziana Tomasi, Gaudenzio Meneghesso. ESD sensitivity of a GaAs MMIC microwave power amplifier |
| 1608 | -- | 1613 | Philippe Galy, J. Bourgeat, J. Jimenez, B. Jacquier, D. Marin-Cudraz, Sylvain Dudit. (2×2) matrix ESD power devices for advanced CMOS technologies |
| 1614 | -- | 1617 | J. Bourgeat, Philippe Galy, A. Dray, J. Jimenez, D. Marin-Cudraz, B. Jacquier. A full characterization of single pitch IO ESD protection based on silicon controlled rectifier and dynamic trigger circuit in CMOS 32 nm node |
| 1618 | -- | 1623 | Peter Jacob. From component to system failure analysis - The future challenge within work-sharing supply chains |
| 1624 | -- | 1631 | Kiyoshi Nikawa, Masatsugu Yamashita, Toru Matsumoto, Katsuyoshi Miura, Yoshihiro Midoh, Koji Nakamae. The combinational or selective usage of the laser SQUID microscope, the non-bias laser terahertz emission microscope, and fault simulations in non-electrical-contact fault localization |
| 1632 | -- | 1636 | Arkadiusz Glowacki, Christian Boit, Philippe Perdu. Performance improvement of Si-CCD detector based backside reflected light and photon emission microscopy by FIB ultimate substrate thinning |
| 1637 | -- | 1639 | B. B. Goldberg, A. Yurt, Y. Lu, E. Ramsay, F. H. Köklü, J. Mertz, T. G. Bifano, M. S. Ünlü. Chromatic and spherical aberration correction for silicon aplanatic solid immersion lens for fault isolation and photon emission microscopy of integrated circuits |
| 1640 | -- | 1645 | G. Bascoul, Philippe Perdu, A. Benigni, Sylvain Dudit, Guillaume Celi, Dean Lewis. Time Resolved Imaging: From logical states to events, a new and efficient pattern matching method for VLSI analysis |
| 1646 | -- | 1651 | Thierry Parrassin, Guillaume Celi, Sylvain Dudit, Michel Vallet. Failure analysis defect location on a real case 55 nm memory using dynamic power supply emulation |
| 1652 | -- | 1657 | Sanjib Kumar Brahma, Arkadiusz Glowacki, Reiner Leihkauf, Christian Boit. Laser induced impact ionization effect in MOSFET during 1064 nm laser stimulation |
| 1658 | -- | 1661 | R. Llido, J. Gomez, Vincent Goubier, N. Froidevaux, L. Dufayard, G. Haller, Vincent Pouget, Dean Lewis. Photoelectric Laser Stimulation applied to Latch-Up phenomenon and localization of parasitic transistors in an industrial failure analysis laboratory |
| 1662 | -- | 1667 | Guillaume Celi, Sylvain Dudit, Thierry Parrassin, Philippe Perdu, Antoine Reverdy, Dean Lewis, Michel Vallet. LVI detection on passive structure in advance CMOS technology: New opportunities for device analysis |
| 1668 | -- | 1672 | Cathy Kardach, I. Kapilevich, Jeffrey A. Block, Ted Lundquist, Steven Kasapi, J. Liao, Yin S. Ng, Bruce Cory. Foundry workflow for dynamic-EFA-based yield ramp |
| 1673 | -- | 1678 | Aniello Esposito, Mauro Ciappa, Wolfgang Fichtner. Synthesis of scanning electron microscopy images by high performance computing for the metrology of advanced CMOS processes |
| 1679 | -- | 1683 | A. Hensler, D. Wingert, Ch. Herold, J. Lutz, M. Thoben. Thermal impedance spectroscopy of power modules |
| 1684 | -- | 1688 | F. Infante, Philippe Perdu, H. B. Kor, C. L. Gan, Dean Lewis. Magnetic field spatial Fourier analysis: A new opportunity for high resolution current localization |
| 1689 | -- | 1692 | Yuya Kasho, Hidetoshi Hirai, Masanori Tsukuda, Ichiro Omura. Tiny-scale "stealth" current sensor to probe power semiconductor device failure |
| 1693 | -- | 1696 | T. Delaroque, B. Domengès, A. Colder, K. Danilo. Comprehensive nanostructural study of SSRM nanocontact on silicon |
| 1697 | -- | 1700 | J. G. van Hassel, G. A. D. Bock, G. van den Berg. Failure mechanisms in advanced BCD technology during reliability qualification |
| 1701 | -- | 1704 | L. Saury, S. Cany. Dynamic defect localization using FPGA to monitor digital values |
| 1705 | -- | 1709 | A. Laroche, P. Rousseille, T. Zirilli. Backside failure analysis case study: Implementation of innovative Local Backside Deprocessing technique |
| 1710 | -- | 1716 | Joachim Würfl, Eldad Bahat-Treidel, Frank Brunner, E. Cho, O. Hilt, Ponky Ivo, A. Knauer, Paul Kurpas, Richard Lossy, M. Schulz, S. Singwald, Markus Weyers, R. Zhytnytska. Reliability issues of GaN based high voltage power devices |
| 1717 | -- | 1720 | Denis Marcon, Xuanwu Kang, J. Viaene, Marleen Van Hove, Puneet Srivastava, Stefaan Decoutere, R. Mertens, G. Borghs. GaN-based HEMTs tested under high temperature storage test |
| 1721 | -- | 1724 | Rui Liu, Dominique M. M.-P. Schreurs, Walter De Raedt, Frederik Vanaverbeke, J. Das, Robert Mertens, Ingrid De Wolf. Electrical characterization and reliability study of integrated GaN power amplifier in multi-layer thin-film technology |
| 1725 | -- | 1729 | M. Riccio, A. Pantellini, Andrea Irace, Giovanni Breglio, A. Nanni, Claudio Lanzieri. Electro-thermal characterization of AlGaN/GaN HEMT on Silicon Microstrip Technology |
| 1730 | -- | 1735 | G. A. Koné, Brice Grandchamp, C. Hainaut, François Marc, C. Maneux, Nathalie Labat, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean Godin. Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses |
| 1736 | -- | 1741 | Sudip Ghosh 0002, Brice Grandchamp, G. A. Koné, François Marc, C. Maneux, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean-Yves Dupuy, Jean Godin. Investigation of the degradation mechanisms of InP/InGaAs DHBT under bias stress conditions to achieve electrical aging model for circuit design |
| 1742 | -- | 1746 | Matteo Dal Lago, Matteo Meneghini, Nicola Trivellin, Gaudenzio Meneghesso, Enrico Zanoni. Degradation mechanisms of high-power white LEDs activated by current and temperature |
| 1747 | -- | 1751 | Nicola Trivellin, Matteo Meneghini, C. De Santi, S. Vaccari, Gaudenzio Meneghesso, Enrico Zanoni, Kenji Orita, S. Takigawa, Tsuyoshi Tanaka, Daisuke Ueda. Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency |
| 1752 | -- | 1756 | Massimo Vanzi, G. Mura, G. Martines. DC parameters for laser diodes from experimental curves |
| 1757 | -- | 1761 | Tsung-Lin Chou, Shin-Yueh Yang, Chung-Jung Wu, Cheng-Nan Han, Kuo-Ning Chiang. 2 thin film and III-V material |
| 1762 | -- | 1766 | D. Bari, N. Wrachien, R. Tagliaferro, Stefano Penna, Thomas M. Brown, Andrea Reale, Aldo Di Carlo, Gaudenzio Meneghesso, A. Cester. Thermal stress effects on Dye-Sensitized Solar Cells (DSSCs) |
| 1767 | -- | 1772 | Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo. Operation of SiC normally-off JFET at the edges of its safe operating area |
| 1773 | -- | 1777 | Alberto Castellazzi, T. Takuno, R. Onishi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara. A study of SiC Power BJT performance and robustness |
| 1778 | -- | 1782 | A. Testa, S. De Caro, Sebastiano Russo, D. Patti, Lucia Torrisi. High temperature long term stability of SiC Schottky diodes |
| 1783 | -- | 1787 | S. Khemiri, M. Kadi, A. Louis. Reliability study of AlGaN/GaN HEMT under electromagnetic, RF and DC stress |
| 1788 | -- | 1791 | Rui Liu, Dominique M. M.-P. Schreurs, Walter De Raedt, Frederik Vanaverbeke, Robert Mertens, Ingrid De Wolf. Thermal optimization of GaN-on-Si HEMTs with plastic package |
| 1792 | -- | 1795 | Edward Namkyu Cho, Jung Han Kang, Ilgu Yun. Effects of channel thickness variation on bias stress instability of InGaZnO thin-film transistors |
| 1796 | -- | 1800 | F. Berthet, Y. Guhel, H. Gualous, B. Boudart, J. L. Trolet, M. Piccione, C. Gaquière. Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy |
| 1801 | -- | 1805 | M. Béranger, N. Vallet, M. Dorel, P. Huet, K. Cadoret. QALT study of scintillating material in digital flat panels for medical imaging |
| 1806 | -- | 1809 | S. I. Chan, W. S. Hong, K. T. Kim, Y. G. Yoon, J. H. Han, Joong Soon Jang. Accelerated life test of high power white light emitting diodes based on package failure mechanisms |
| 1810 | -- | 1818 | Usama Zaghloul, George Papaioannou, Bharat Bhushan, Fabio Coccetti, Patrick Pons, Robert Plana. On the reliability of electrostatic NEMS/MEMS devices: Review of present knowledge on the dielectric charging and stiction failure mechanisms and novel characterization methodologies |
| 1819 | -- | 1823 | T. Y. Hung, S. Y. Chiang, C. J. Huang, C. C. Lee, K. N. Chiang. Thermal-mechanical behavior of the bonding wire for a power module subjected to the power cycling test |
| 1824 | -- | 1829 | S. Pietranico, Stéphane Lefebvre, S. Pommier, M. Berkani Bouaroudj, S. Bontemps. A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices |
| 1830 | -- | 1835 | J. P. Ousten, Zoubir Khatir. Investigations of thermal interfaces aging under thermal cycling conditions for power electronics applications |
| 1836 | -- | 1839 | T. Asada, Y. Yagi, M. Usui, T. Suzuki, N. Ohno. Warpage analysis of layered structures connected by direct brazing |
| 1840 | -- | 1844 | Hisashi Tanie, Kazuhiko Nakane, Yusuke Urata, Masatoshi Tsuda, Nobutada Ohno. Warpage variations of Si/solder/OFHC-Cu layered plates subjected to cyclic thermal loading |
| 1845 | -- | 1849 | A. Aubert, S. Jacques, S. Pétremont, Nathalie Labat, Hélène Frémont. Experimental power cycling on insulated TRIAC package: Reliability interpretation thanks to an innovative failure analysis flow |
| 1850 | -- | 1855 | Hongbin Shi, Faxing Che, Toshitsugu Ueda. Experiment and numerical analysis for edge and corner bonded PoP bottom package assemblies under four-point bending |
| 1856 | -- | 1859 | Ingrid De Wolf, K. Croes, O. Varela Pedreira, Riet Labie, A. Redolfi, M. Van De Peer, Kris Vanstreels, C. Okoro, Bart Vandevelde, Eric Beyne. Cu pumping in TSVs: Effect of pre-CMP thermal budget |
| 1860 | -- | 1864 | Lutz Meinshausen, Kirsten Weide-Zaage, Hélène Frémont. Migration induced material transport in Cu-Sn IMC and SnAgCu microbumps |
| 1865 | -- | 1868 | R. T. H. Rongen, A. van IJzerloo, C. Cotofana, K. M. Lan. Cratering response method to study the effect of ultrasonic energy on Cu-wire bonding quality |
| 1869 | -- | 1873 | J. Iannacci, A. Faes, A. Repchankova, Augusto Tazzoli, Gaudenzio Meneghesso. An active heat-based restoring mechanism for improving the reliability of RF-MEMS switches |
| 1874 | -- | 1877 | M. Koutsoureli, G. J. Papaioannou. Determination of bulk discharge current in the dielectric film of MEMS capacitive switches |
| 1878 | -- | 1881 | B. Wang, S. Tanaka, B. Guo, G. Vereecke, S. Severi, Ann Witvrouw, Martine Wevers, Ingrid De Wolf. Outgassing study of thin films used for poly-SiGe based vacuum packaging of MEMS |
| 1882 | -- | 1886 | L. Yang, P. A. Agyakwa, C. M. Johnson. A time-domain physics-of-failure model for the lifetime prediction of wire bond interconnects |
| 1887 | -- | 1891 | A. Massenz, M. Barbato, V. Giliberto, B. Margesin, S. Colpo, Gaudenzio Meneghesso. Investigation methods and approaches for alleviating charge trapping phenomena in ohmic RF-MEMS switches submitted to cycling test |
| 1892 | -- | 1897 | Y. Celnikier, L. Dupont, E. Hervé, G. Coquery, L. Benabou. Optimization of wire connections design for power electronics |
| 1898 | -- | 1902 | Hongbin Shi, Toshitsugu Ueda. Comparative studies on solder joint reliability of CTBGA assemblies with various adhesives using the array-based package shear test |
| 1903 | -- | 1907 | C. Busca, Remus Teodorescu, Frede Blaabjerg, Stig Munk-Nielsen, Lars Helle, T. Abeyasekera, Pedro Rodríguez. An overview of the reliability prediction related aspects of high power IGBTs in wind power applications |
| 1908 | -- | 1912 | Y. Weber. Mechanism of breakdown voltage wavering in power MOSFET induced by silicon crystalline defect |
| 1913 | -- | 1918 | Helmut Köck, Christian Djelassi, Stefano de Filippis, Robert Illing, Michael Nelhiebel, Markus Ladurner, Michael Glavanovics, Dionyz Pogany. Improved thermal management of low voltage power devices with optimized bond wire positions |
| 1919 | -- | 1926 | Frédéric Richardeau, Zhifeng Dou, Emmanuel Sarraute, Jean-Marc Blaquière, Didier Flumian. Comparison of IGBT short-circuit failure "ohmic mode": Epoxy molded package versus silicone gel module for new fail-safe and interruptible power converters |
| 1927 | -- | 1932 | Michael Nelhiebel, Robert Illing, C. Schreiber, S. Wöhlert, S. Lanzerstorfer, Markus Ladurner, C. Kadow, Stefan Decker, D. Dibra, H. Unterwalcher, M. Rogalli, W. Robl, T. Herzig, M. Poschgan, M. Inselsbacher, Michael Glavanovics, Sylvain Fraïssé. A reliable technology concept for active power cycling to extreme temperatures |
| 1933 | -- | 1937 | Masahiro Tanaka, Ichiro Omura. Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part I |
| 1938 | -- | 1942 | Dao-Guo Yang, F. F. Wan, Z. Y. Shou, Willem D. van Driel, H. Scholten, L. Goumans, Roberto Faria. Effect of high temperature aging on reliability of automotive electronics |
| 1943 | -- | 1947 | Toufik Azoui, Patrick Tounsi, Philippe Dupuy, L. Guillot, Jean-Marie Dorkel. 3D Electro-thermal modelling of bonding and metallization ageing effects for reliability improvement of power MOSFETs |
| 1948 | -- | 1953 | Paolo Cova, Mirko Bernardoni, Nicola Delmonte, Roberto Menozzi. Dynamic electro-thermal modeling for power device assemblies |
| 1954 | -- | 1958 | Stefano de Filippis, Vladimír Kosel, Donald Dibra, Stefan Decker, Helmut Köck, Andrea Irace. ANSYS based 3D electro-thermal simulations for the evaluation of power MOSFETs robustness |
| 1959 | -- | 1963 | Ana Villamor-Baliarda, Piet Vanmeerbeek, Jaume Roig, Peter Moens, David Flores. Electric field unbalance for robust floating ring termination |
| 1964 | -- | 1967 | Alberto Castellazzi, Wei Juin Choy, Pericle Zanchetta. Dynamic active cooling for improved power system reliability |
| 1968 | -- | 1971 | Akram Eddahech, Olivier Briat, Hervé Henry, Jean-Yves Delétage, Eric Woirgard, Jean-Michel Vinassa. Ageing monitoring of lithium-ion cell during power cycling tests |
| 1972 | -- | 1975 | Masanori Tsukuda, Keiichiro Kawakami, Kenichi Takahama, Ichiro Omura. "Design for EMI" approach on power PiN diode reverse recovery |
| 1976 | -- | 1979 | Ramzi Chaari, Olivier Briat, Jean-Yves Delétage, Eric Woirgard, Jean-Michel Vinassa. How supercapacitors reach end of life criteria during calendar life and power cycling tests |
| 1980 | -- | 1984 | Houssam Arbess, Marise Bafleur. MOS-IGBT power devices for high-temperature operation in smart power SOI technology |
| 1985 | -- | 1989 | F. Vacher, B. Calvet, F. Mialhe. Power cycling fatigue and lifetime prediction of power electronic devices in space applications |
| 1990 | -- | 1994 | Moustafa Zerarka, Patrick Austin, Marise Bafleur. Comparative study of sensitive volume and triggering criteria of SEB in 600 V planar and trench IGBTs |
| 1995 | -- | 1998 | Giovanni Busatto, D. Bisello, Giuseppe Currò, P. Giubilato, Francesco Iannuzzo, S. Mattiazzo, D. Pantano, Annunziata Sanseverino, L. Silvestrin, M. Tessaro, Francesco Velardi, Jeffery Wyss. A new test methodology for an exhaustive study of single-event-effects on power MOSFETs |
| 1999 | -- | 2003 | Piero Spezzigu, Laurent Béchou, Gianandrea Quadri, Olivier Gilard, Yves Ousten, Massimo Vanzi. An original DoE-based tool for silicon photodetectors EoL estimation in space environments |
| 2004 | -- | 2009 | Joaquín Alvarado, Valeria Kilchytska, El Hafed Boufouss, Denis Flandre. Characterization and modelling of single event transients in LDMOS-SOI FETs |
| 2010 | -- | 2014 | Boubekeur Tala-Ighil, Amrane Oukaour, Hamid Gualous, Bertrand Boudart, Bertrand Pouderoux, Jean-Lionel Trolet, Marc Piccione. Total ionising dose effects on punch-through insulated gate bipolar transistors turn-on switching behaviour |