| 1751 | -- | 1752 | Mauro Ciappa, Paolo Cova, Francesco Iannuzzo, Gaudenzio Meneghesso. Editorial |
| 1753 | -- | 1760 | J. W. McPherson. Time dependent dielectric breakdown physics - Models revisited |
| 1761 | -- | 1768 | Paul Pfäffli, P. Tikhomirov, X. Xu, I. Avci, Y.-S. Oh, P. Balasingam, S. Krishnamoorthy, T. Ma. TCAD for reliability |
| 1769 | -- | 1775 | G. Boselli. ESD design challenges in state-of-the-art analog technologies |
| 1776 | -- | 1780 | Marcantonio Catelani, Lorenzo Ciani, G. Barile. A new design technique of TFT-LCD display for avionics application |
| 1781 | -- | 1786 | Rodrigo Possamai Bastos, Frank Sill Torres, Giorgio Di Natale, Marie-Lise Flottes, Bruno Rouzeyre. Novel transient-fault detection circuit featuring enhanced bulk built-in current sensor with low-power sleep-mode |
| 1787 | -- | 1791 | Y. Wang, Marius Enachescu, Sorin Dan Cotofana, Liang Fang. Variation tolerant on-chip degradation sensors for dynamic reliability management systems |
| 1792 | -- | 1796 | N. Cucu Laurenciu, Sorin Dan Cotofana. Context aware slope based transistor-level aging model |
| 1797 | -- | 1802 | C. Banc, J. Guinet, E. Doche. High performance electronics in long lifetime, continuous operation, industrial products: The art of balancing conflicting interests |
| 1803 | -- | 1807 | L. Cola, M. De Tomasi, R. Enrici Vaion, A. Mervic, P. Zabberoni. Read disturb on flash memories: Study on temperature annealing effect |
| 1808 | -- | 1811 | Giorgio De Pasquale, M. Barbato, V. Giliberto, Gaudenzio Meneghesso, Aurelio Somà. Reliability improvement in microstructures by reducing the impact velocity through electrostatic force modulation |
| 1812 | -- | 1815 | Clemens Ostermaier, Peter Lagger, Mohammed Alomari, Patrick Herfurth, David Maier 0002, Alexander Alexewicz, Marie-Antoinette di Forte-Poisson, Sylvain L. Delage, Gottfried Strasser, Dionyz Pogany, Erhard Kohn. Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure |
| 1816 | -- | 1821 | R. Llido, Pascal Masson, Arnaud Régnier, Vincent Goubier, G. Haller, Vincent Pouget, Dean Lewis. Effects of 1064 nm laser on MOS capacitor |
| 1822 | -- | 1826 | Paulo F. Butzen, Vinícius Dal Bem, André Inácio Reis, Renato P. Ribas. Design of CMOS logic gates with enhanced robustness against aging degradation |
| 1827 | -- | 1832 | Lutz Meinshausen, Hélène Frémont, Kirsten Weide-Zaage. Migration induced IMC formation in SAC305 solder joints on Cu, NiAu and NiP metal layers |
| 1833 | -- | 1836 | Marcantonio Catelani, Lorenzo Ciani. Experimental tests and reliability assessment of electronic ballast system |
| 1837 | -- | 1842 | Zhengliang Lv, Linda S. Milor, Shiyuan Yang. Statistical model of NBTI and reliability simulation for analogue circuits |
| 1843 | -- | 1847 | S. N. Pagliarini, G. G. dos Santos, Lirida Alves de Barros Naviner, Jean-François Naviner. Exploring the feasibility of selective hardening for combinational logic |
| 1848 | -- | 1852 | Weisheng Zhao, Y. Zhang, T. Devolder, Jacques-Olivier Klein, Dafine Ravelosona, Claude Chappert, Pascale Mazoyer. Failure and reliability analysis of STT-MRAM |
| 1853 | -- | 1858 | E. Nogueira, Manuel Vázquez, J. Mateos. Accelerated life test of high luminosity AlGaInP LEDs |
| 1859 | -- | 1864 | D. Othman, M. Bouarroudj-Berkani, Stéphane Lefebvre, A. Ibrahim, Zoubir Khatir, A. Bouzourene. Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application |
| 1865 | -- | 1869 | Na Gong, Shixiong Jiang, Jinhui Wang, B. Aravamudhan, K. Sekar, Ramalingam Sridhar. Hybrid-cell register files design for improving NBTI reliability |
| 1870 | -- | 1875 | Hongbin Shi, F. X. Che, Cuihua Tian, Rui Zhang, Jong-Tae Park, Toshitsugu Ueda. Analysis of edge and corner bonded PSvfBGA reliability under thermal cycling conditions by experimental and finite element methods |
| 1876 | -- | 1882 | G. Ghidini. Charge-related phenomena and reliability of non-volatile memories |
| 1883 | -- | 1890 | M. Toledano-Luque, Ben Kaczer, Jacopo Franco, Philippe Roussel, Tibor Grasser, Guido Groeseneken. Defect-centric perspective of time-dependent BTI variability |
| 1891 | -- | 1894 | K. Rott, H. Reisinger, Stefano Aresu, Christian Schlünder, K. Kölpin, Wolfgang Gustin, Tibor Grasser. New insights on the PBTI phenomena in SiON pMOSFETs |
| 1895 | -- | 1900 | Philippe Chiquet, Pascal Masson, Romain Laffont, Gilles Micolau, Jérémy Postel-Pellerin, Frédéric Lalande, Bernard Bouteille, Jean-Luc Ogier. 2 layers using dynamic measurement protocols |
| 1901 | -- | 1904 | Dongwoo Kim, Seonhaeng Lee, Cheolgyu Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang. Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress |
| 1905 | -- | 1908 | Seonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, N. H. Lee, G. J. Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang. Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs |
| 1909 | -- | 1912 | E. Miranda, Takamasa Kawanago, Kuniyuki Kakushima, J. Suñé, Hiroshi Iwai. Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown |
| 1913 | -- | 1917 | G. T. Sasse, M. Combrié. The temperature dependence of mixed mode degradation in bipolar transistors |
| 1918 | -- | 1923 | Louis Gerrer, Stanislav Markov, Salvatore M. Amoroso, Fikru Adamu-Lema, Asen Asenov. Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs |
| 1924 | -- | 1927 | Nuria Ayala, Javier Martín-Martínez, Rosana Rodríguez, M. B. Gonzalez, Montserrat Nafría, X. Aymerich, Eddy Simoen. Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs |
| 1928 | -- | 1931 | Gabriele Navarro, S. Souiki, A. Persico, V. Sousa, J.-F. Nodin, Carine Jahan, F. Aussenac, V. Delaye, O. Cueto, L. Perniola, B. De Salvo. High temperature reliability of μtrench Phase-Change Memory devices |
| 1932 | -- | 1935 | Jacopo Franco, S. Graziano, Ben Kaczer, Felice Crupi, L.-Å. Ragnarsson, Tibor Grasser, Guido Groeseneken. BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic |
| 1936 | -- | 1939 | Mingu Kang, Ilgu Yun. Experimental observation of gate geometry dependent characteristic degradations of the multi-finger MOSFETs |
| 1940 | -- | 1944 | Song Lan, Cher Ming Tan, Kevin Wu. Reliability study of LED driver - A case study of black box testing |
| 1945 | -- | 1948 | Seung Min Lee, Chong-Gun Yu, Seung Min Jeong, Won-Ju Cho, Jong-Tae Park. Drain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETs |
| 1949 | -- | 1952 | Seonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang. Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs |
| 1953 | -- | 1959 | Chang-Chih Chen, Fahad Ahmed, Dae-Hyun Kim, Sung Kyu Lim, Linda Milor. Backend dielectric reliability simulator for microprocessor system |
| 1960 | -- | 1965 | V. M. Dwyer. Diffusivity variation in Electromigration failure |
| 1966 | -- | 1970 | R. Pelzer, Michael Nelhiebel, R. Zink, S. Wöhlert, A. Lassnig, G. Khatibi. High temperature storage reliability investigation of the Al-Cu wire bond interface |
| 1971 | -- | 1974 | B. Dimcic, Riet Labie, J. De Messemaeker, Kris Vanstreels, K. Croes, Bert Verlinden, Ingrid De Wolf. 3Sn phase in the bump and thin film Cu/Sn structures |
| 1975 | -- | 1980 | Y. Abdul Wahab, A. F. Ahmad, H. Hussin, N. Soin. Reduction of annealed-induced wafer defects in dual-damascene copper interconnects |
| 1981 | -- | 1986 | R. L. de Orio, Hajdin Ceric, Siegfried Selberherr. Electromigration failure in a copper dual-damascene structure with a through silicon via |
| 1987 | -- | 1992 | J. Kludt, Kirsten Weide-Zaage, M. Ackermann, V. Hein. 3 layers on the thermal-electrical and mechanical behaviour of Al metallizations |
| 1993 | -- | 1997 | M. Plappert, O. Humbel, A. Koprowski, M. Nowottnick. Characterization of Ti diffusion in PVD deposited WTi/AlCu metallization on monocrystalline Si by means of secondary ion mass spectroscopy |
| 1998 | -- | 2004 | Philippe Galy, J. Bourgeat, J. Jimenez, N. Guitard, A. Dray, G. Troussier, B. Jacquier, D. Marin-Cudraz. Symmetrical ESD trigger and pull-up using BIMOS transistor in advanced CMOS technology |
| 2005 | -- | 2009 | Gerhard Groos. Characterisation method for chip card ESD events causing terminal failures |
| 2010 | -- | 2013 | M. Cason, G. L. Gobbato, L. Manfredi, M. Nessi, R. Ricci, P. Pulici, C. M. Villa. Thermal overstress of Cu wire under pulsed current condition |
| 2014 | -- | 2018 | Jae-Seong Jeong. Failure mechanism and reliability test method for USB interface circuitry on CPUs for mobile devices |
| 2019 | -- | 2023 | Andrea Irace. Infrared Thermography application to functional and failure analysis of electron devices and circuits |
| 2024 | -- | 2030 | C. Pagano, Christian Boit, Arkadiusz Glowacki, Reiner Leihkauf, Y. Yokoyama. Comparison of FET electro-optical modulation for 1300 nm and 1064 nm laser sources |
| 2031 | -- | 2034 | Arkadiusz Glowacki, Christian Boit, Philippe Perdu. Optimum Si thickness for backside detection of photon emission using Si-CCD |
| 2035 | -- | 2038 | A. Sarafianos, R. Llido, Jean-Max Dutertre, O. Gagliano, V. Serradeil, Mathieu Lisart, Vincent Goubier, Assia Tria, Vincent Pouget, Dean Lewis. Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90 nm technology |
| 2039 | -- | 2042 | T. Nshanian, P. N. Grillot, M. Holub, S. Watanabe, W. Götz. Effect of residual stress on the electrical activity of dislocations in GaN light emitting diodes |
| 2043 | -- | 2049 | M. R. Bruce, L. K. Ross, C. Scholz, L. Joshi, Vrajesh Dave, C. M. Chua. Through silicon in-circuit logic analysis for localizing logic pattern failures |
| 2050 | -- | 2053 | Marco Sanna, Matteo Medda. FIB/TEM analysis supported by μ-probing approach to identify via marginality |
| 2054 | -- | 2057 | Eddie Redmard, Deny Hanan, Alex Shevachman. Detection of DR violations in ASIC components using photon emission techniques |
| 2058 | -- | 2063 | M. Castignolles, S. Alves, P. Rousseille, T. Zirilli. Backside failure analysis application of light scattering for active silicon defect detection |
| 2064 | -- | 2067 | Giancarlo Calvagno, Giuseppe Muni, Andrea Jossa, Domenico Mello. Sample Preparation methodology for ultra thin oxide damage in Metal-Insulator-Metal capacitors |
| 2068 | -- | 2072 | A. Deyine, E. Doche, F. Battistella, C. Banc. A challenging case study resolved by using the Dynamic Laser Stimulation technique |
| 2073 | -- | 2076 | Jia Lu, BoCheng Cao, WenShe Wu, YuFeng Dai, ChuangJun Huang, G. Mura. MIM capacitor-related early-stage field failures |
| 2077 | -- | 2080 | L. Cinà, Aldo Di Carlo, Andrea Reale. Time resolved temperature profiles of high power HEMTs by photocurrent spectral analysis |
| 2081 | -- | 2086 | A. Watanabe, I. Omura. Real-time failure imaging system under power stress for power semiconductors using Scanning Acoustic Tomography (SAT) |
| 2087 | -- | 2092 | G. Bascoul, Philippe Perdu, Maryse Béguin, Dean Lewis. High performance thermography with InGaAs photon counting camera |
| 2093 | -- | 2097 | Isabella Rossetto, Matteo Meneghini, Tiziana Tomasi, Dai Yufeng, Gaudenzio Meneghesso, Enrico Zanoni. Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits |
| 2098 | -- | 2103 | Joerg Jatzkowski, Michél Simon-Najasek, Frank Altmann. Novel techniques for dopant contrast analysis on real IC structures |
| 2104 | -- | 2109 | Raoul van Gastel, Gregor Hlawacek, Harold J. W. Zandvliet, Bene Poelsema. Subsurface analysis of semiconductor structures with helium ion microscopy |
| 2110 | -- | 2114 | V. Iglesias, M. Lanza, A. Bayerl, M. Porti, M. Nafría, X. Aymerich, L. F. Liu, J. F. Kang, G. Bersuker, K. Zhang, Z. Y. Shen. 2/Pt structures |
| 2115 | -- | 2119 | Mario Poschgan, Josef Maynollo, Michael Inselsbacher. Inverted high frequency Scanning Acoustic Microscopy inspection of power semiconductor devices |
| 2120 | -- | 2122 | Y. Lu, E. Ramsay, C. R. Stockbridge, A. Yurt, F. H. Köklü, T. G. Bifano, M. S. Ünlü, B. B. Goldberg. Spherical aberration correction in aplanatic solid immersion lens imaging using a MEMS deformable mirror |
| 2123 | -- | 2126 | J. Gaudestad, V. Talanov, P. C. Huang. Space Domain Reflectometry for opens detection location in microbumps |
| 2127 | -- | 2134 | R. L. Torrisi, V. Maiorana, R. Nicolosi, G. Presti. Catastrophic flip-chip failures at thermal cycles caused by micro-cracks in passivation layer, present only in the spacing between minimum width stripes of last metal level |
| 2135 | -- | 2138 | Andreas Rummel, Klaus Schock, Andrew Smith, Stephan Kleindiek. A new approach for making electrically conductive interconnections between small contacts in failure analysis |
| 2139 | -- | 2143 | Mauro Ciappa, Emre Ilgünsatiroglu, Alexey Yu. Illarionov. Monte Carlo simulation of emission site, angular and energy distributions of secondary electrons in silicon at low beam energies |
| 2144 | -- | 2148 | Richard Lossy, Hervé Blanck, Joachim Würfl. Reliability studies on GaN HEMTs with sputtered Iridium gate module |
| 2149 | -- | 2152 | Arvydas Matulionis, Juozapas Liberis, Emilis Sermuksnis, L. Ardaravicius, A. Simukovic, C. Kayis, C. Y. Zhu, R. Ferreyra, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç. Window for better reliability of nitride heterostructure field effect transistors |
| 2153 | -- | 2158 | Alessandro Chini, F. Soci, Fausto Fantini, A. Nanni, A. Pantellini, Claudio Lanzieri, D. Bisi, Gaudenzio Meneghesso, Enrico Zanoni. Field plate related reliability improvements in GaN-on-Si HEMTs |
| 2159 | -- | 2163 | F. Berthet, Y. Guhel, H. Gualous, B. Boudart, J. L. Trolet, M. Piccione, C. Gaquière. Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence |
| 2164 | -- | 2167 | Matteo Dal Lago, Matteo Meneghini, Nicola Trivellin, Giovanna Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni. Phosphors for LED-based light sources: Thermal properties and reliability issues |
| 2168 | -- | 2173 | S. H. Chen, C. M. Tan, G. H. Tan, F. F. He. Degradation behavior of high power light emitting diode under high frequency switching |
| 2174 | -- | 2179 | So-Ra Gang, Deokgi Kim, Sang-Mook Kim, Nam Hwang, Kwang-Cheol Lee. Improvement in the moisture stability of CaS: Eu phosphor applied in light-emitting diodes by titania surface coating |
| 2180 | -- | 2183 | A. E. Chernyakov, M. E. Levinshtein, P. V. Petrov, N. M. Shmidt, E. I. Shabunina, A. L. Zakheim. Failure mechanisms in blue InGaN/GaN LEDs for high power operation |
| 2184 | -- | 2187 | B. Lambert, Nathalie Labat, D. Carisetti, S. Karboyan, Jean-Guy Tartarin, J. Thorpe, Laurent Brunel, A. Curutchet, N. Malbert, E. Latu-Romain, M. Mermoux. Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test |
| 2188 | -- | 2193 | Denis Marcon, J. Viaene, P. Favia, H. Bender, Xuanwu Kang, S. Lenci, S. Stoffels, Stefaan Decoutere. Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop |
| 2194 | -- | 2199 | P. Marko, Matteo Meneghini, Sergey Bychikhin, D. Marcon, Gaudenzio Meneghesso, Enrico Zanoni, Dionyz Pogany. IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors |
| 2200 | -- | 2204 | B. Lambert, J. Thorpe, R. Behtash, B. Schauwecker, F. Bourgeois, H. Jung, J. Bataille, P. Mezenge, C. Gourdon, C. Ollivier, D. Floriot, H. Blanck. Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification |
| 2205 | -- | 2209 | J.-B. Fonder, L. Chevalier, C. Genevois, Olivier Latry, C. Duperrier, Farid Temcamani, H. Maanane. Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test |
| 2210 | -- | 2214 | Peter Ersland, Shivarajiv Somisetty. Reliability validation of compound semiconductor foundry processes |
| 2215 | -- | 2219 | Suehye Park, Edward Namkyu Cho, Ilgu Yun. Threshold voltage shift prediction for gate bias stress on amorphous InGaZnO thin film transistors |
| 2220 | -- | 2223 | Abel Fontserè, A. Pérez-Tomás, Philippe Godignon, José Millán, H. De Vleeschouwer, J. M. Parsey, P. Moens. 2·AlGaN/GaN MIS-HEMTs |
| 2224 | -- | 2227 | Satoshi Ono, Mauro Ciappa, Shigeru Hiura, Wolfgang Fichtner. Electro-thermal simulation in the time domain of GaN HEMT for RF switch-mode amplifier |
| 2228 | -- | 2234 | H. A. C. Tilmans, Jeroen De Coster, P. Helin, Vladimir Cherman, A. Jourdain, P. De Moor, Bart Vandevelde, N. P. Pham, J. Zekry, Ann Witvrouw, Ingrid De Wolf. MEMS packaging and reliability: An undividable couple |
| 2235 | -- | 2239 | T. Kuenzig, G. Schrag, J. Iannacci. Modeling and simulation of an active restoring mechanism for high reliability switches in RF-MEMS technology |
| 2240 | -- | 2244 | M. Koutsoureli, L. Michalas, George Papaioannou. Temperature effects on the bulk discharge current of dielectric films of MEMS capacitive switches |
| 2245 | -- | 2249 | A. Persano, Augusto Tazzoli, P. Farinelli, Gaudenzio Meneghesso, P. Siciliano, F. Quaranta. K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability |
| 2250 | -- | 2255 | Viorel Banu, Philippe Godignon, X. Perpiñà, Xavier Jordà, José Millán. Enhanced power cycling capability of SiC Schottky diodes using press pack contacts |
| 2256 | -- | 2260 | F. Z. Ling, Jeroen De Coster, Ann Witvrouw, J.-P. Celis, Ingrid De Wolf. Study of glass frit induced stiction using a micromirror array |
| 2261 | -- | 2266 | A. Peschot, C. Poulain, F. Souchon, P.-L. Charvet, N. Bonifaci, O. Lesaint. Contact degradation due to material transfer in MEM switches |
| 2267 | -- | 2271 | L. Michalas, A. Garg, A. Venkattraman, M. Koutsoureli, Alina A. Alexeenko, Dimitrios Peroulis, G. J. Papaioannou. A study of field emission process in electrostatically actuated MEMS switches |
| 2272 | -- | 2277 | A. Khaled, M. Raoof, Vladimir Cherman, K. Jans, M. Abbas, Sh. Ebrahim, G. Bryce, P. Verheyen, Ann Witvrouw, Ingrid De Wolf. Effect of the functionalization process on the performance of SiGe MEM resonators used for bio-molecular sensing |
| 2278 | -- | 2282 | Samed Barnat, Hélène Frémont, Alexandrine Gracia, Eric Cadalen. Evaluation by three-point-bend and ball-on-ring tests of thinning process on silicon die strength |
| 2283 | -- | 2288 | R. Schmidt, C. König, P. Prenosil. Novel wire bond material for advanced power module packages |
| 2289 | -- | 2293 | Michael Goroll, Reinhard Pufall. Determination of adhesion and delamination prediction for semiconductor packages by using Grey Scale Correlation and Cohesive Zone Modelling |
| 2294 | -- | 2300 | X. Perpiñà, R. Werkhoven, J. Jakovenko, J. Formánek, Miquel Vellvehí, Xavier Jordà, J. Kunen, P. Bancken, P. J. Bolt. Design for reliability of solid state lighting systems |
| 2301 | -- | 2305 | H. Q. S. Dang, M. R. Corfield, Alberto Castellazzi, C. M. Johnson, P. W. Wheeler. Repetitive high peak current pulsed discharge film-capacitor reliability testing |
| 2306 | -- | 2309 | J.-B. Jullien, B. Plano, Hélène Frémont. Pushing toward the limits of acceleration: Example on wire-bond assemblies |
| 2310 | -- | 2313 | N. Torres Matabosch, M. Kaynak, F. Coccetti, M. Wietstruck, Bernd Tillack, J. L. Cazaux. Estimation of RF performance from LF measurements: Towards the design for reliability in RF-MEMS |
| 2314 | -- | 2320 | L. A. Navarro, X. Perpiñà, Miquel Vellvehí, Viorel Banu, Xavier Jordà. Thermal cycling analysis of high temperature die-attach materials |
| 2321 | -- | 2325 | F. Le Henaff, Stephane Azzopardi, Jean-Yves Deletage, Eric Woirgard, S. Bontemps, J. Joguet. A preliminary study on the thermal and mechanical performances of sintered nano-scale silver die-attach technology depending on the substrate metallization |
| 2326 | -- | 2330 | Jae-Seong Jeong, Nochang Park, Changwoon Han. Field failure mechanism study of solder interconnection for crystalline silicon photovoltaic module |
| 2331 | -- | 2335 | Rui Zhang, Hongbin Shi, Yuehong Dai, Jong-Tae Park, Toshitsugu Ueda. Thermo-mechanical reliability optimization of MEMS-based quartz resonator using validated finite element model |
| 2336 | -- | 2341 | Werner Kanert. Active cycling reliability of power devices: Expectations and limitations |
| 2342 | -- | 2346 | E. Suhir. When adequate and predictable reliability is imperative |
| 2347 | -- | 2352 | O. Schilling, M. Schäfer, K. Mainka, M. Thoben, F. Sauerland. Power cycling testing and FE modelling focussed on Al wire bond fatigue in high power IGBT modules |
| 2353 | -- | 2357 | B. Czerny, M. Lederer, B. Nagl, A. Trnka, G. Khatibi, M. Thoben. Thermo-mechanical analysis of bonding wires in IGBT modules under operating conditions |
| 2358 | -- | 2362 | Ashraf Ahmed, Y. Shadrokh, L. Coulbeck, Alberto Castellazzi, C. M. Johnson. A closed-loop IGBT non-destructive tester |
| 2363 | -- | 2367 | G. Busatto, V. De Luca, Francesco Iannuzzo, A. Sanseverino, F. Velardi. Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure |
| 2368 | -- | 2373 | J. Roig, J. Lebon, S. Vandeweghe, S. Mouhoubi, F. Bauwens. Improved current filament control during Zener diode zapping |
| 2374 | -- | 2379 | Stefano de Filippis, Helmut Köck, Michael Nelhiebel, Vladimir Kosel, Stefan Decker, Michael Glavanovics, Andrea Irace. Modeling of highly anisotropic microstructures for electro-thermal simulations of power semiconductor devices |
| 2380 | -- | 2384 | Yuka Morisawa, Takuya Kodama, Satoshi Matsumoto. Design guideline of a thin film SOI power MOSFET for high thermal stability |
| 2385 | -- | 2390 | M. Riccio, G. De Falco, L. Maresca, Giovanni Breglio, E. Napoli, Andrea Irace, Y. Iwahashi, Paolo Spirito. 3D electro-thermal simulations of wide area power devices operating in avalanche condition |
| 2391 | -- | 2396 | P. Cova, Nicola Delmonte. Thermal modeling and design of power converters with tight thermal constraints |
| 2397 | -- | 2402 | T. Poller, T. Basler, M. Hernes, S. D'Arco, J. Lutz. Mechanical analysis of press-pack IGBTs |
| 2403 | -- | 2408 | E. E. Kostandyan, K. Ma. Reliability estimation with uncertainties consideration for high power IGBTs in 2.3 MW wind turbine converter system |
| 2409 | -- | 2413 | A. Villamor-Baliarda, P. Vanmeerbeek, M. Riccio, V. d'Alessandro, Andrea Irace, J. Roig, D. Flores, P. Moens. Influence of charge balance on the robustness of trench-based super junction diodes |
| 2414 | -- | 2419 | Alberto Castellazzi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara. Thermal instability effects in SiC Power MOSFETs |
| 2420 | -- | 2425 | Carmine Abbate, G. Busatto, Francesco Iannuzzo. Unclamped repetitive stress on 1200 V normally-off SiC JFETs |
| 2426 | -- | 2430 | A. Zanandrea, Eldad Bahat-Treidel, F. Rampazzo, A. Stocco, Matteo Meneghini, Enrico Zanoni, O. Hilt, Ponky Ivo, J. Wuerfl, Gaudenzio Meneghesso. Single- and double-heterostructure GaN-HEMTs devices for power switching applications |
| 2431 | -- | 2434 | Yohei Iwahashi, Yoshihito Mizuno, Masafumi Hara, Ryuzo Tagami, Masanori Ishigaki. Analysis of current distribution on IGBT under unclamped inductive switching conditions |
| 2435 | -- | 2437 | A. S. Petrov, V. N. Ulimov. Some features of degradation in bipolar transistors at different test conditions for total ionizing dose effect |
| 2438 | -- | 2442 | A. Eddahech, Olivier Briat, E. Woirgard, J.-M. Vinassa. Remaining useful life prediction of lithium batteries in calendar ageing for automotive applications |
| 2443 | -- | 2446 | Yasushi Yamada. Power semiconductor module using a bonding film with anisotropic thermal conduction |
| 2447 | -- | 2451 | M. Ackermann, V. Hein, C. Kovács, Kirsten Weide-Zaage. A design for robust wide metal tracks |
| 2452 | -- | 2456 | S. Rathgeber, R. Bauer, A. Otto, E. Peter, J. Wilde. Harsh environment application of electronics - Reliability of copper wiring and testability thereof |
| 2457 | -- | 2464 | Zhifeng Dou, Frédéric Richardeau, Emmanuel Sarraute, Vincent Bley, Jean-Marc Blaquière, Claire Vella, Gilles Gonthier. PCB dual-switch fuse with energetic materials embedded: Application for new fail-safe and fault-tolerant converters |
| 2465 | -- | 2470 | S. Baccaro, Giovanni Busatto, M. Citterio, Paolo Cova, Nicola Delmonte, Francesco Iannuzzo, A. Lanza, M. Riva, A. Sanseverino, G. Spiazzi. Reliability oriented design of power supplies for high energy physics applications |
| 2471 | -- | 2476 | I. Cortés, X. Perpiñà, J. Urresti, Xavier Jordà, J. Rebollo. Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling |
| 2477 | -- | 2481 | H. Gualous, R. Gallay, M. Al Sakka, A. Oukaour, Boubekeur Tala-Ighil, B. Boudart. Calendar and cycling ageing of activated carbon supercapacitor for automotive application |
| 2482 | -- | 2486 | Cécile Weulersse, Florent Miller, D. Alexandrescu, E. Schaefer, O. Crépel, Rémi Gaillard. Test methodology of a new upset mechanism induced by protons in deep sub-micron devices |
| 2487 | -- | 2489 | A. Quatela, A. Agresti, S. Mastroianni, S. Pescetelli, Thomas M. Brown, Andrea Reale, Aldo Di Carlo. Fabrication and reliability of dye solar cells: A resonance Raman scattering study |
| 2490 | -- | 2494 | N. Wrachien, D. Bari, J. Kovác, J. Jakabovic, D. Donoval, Gaudenzio Meneghesso, A. Cester. Enhanced permanent degradation of organic TFT under electrical stress and visible light exposure |
| 2495 | -- | 2499 | D. Bari, N. Wrachien, R. Tagliaferro, Thomas M. Brown, Andrea Reale, Aldo Di Carlo, Gaudenzio Meneghesso, A. Cester. Reliability study of dye-sensitized solar cells by means of solar simulator and white LED |
| 2500 | -- | 2503 | Raffaele De Rose, A. Malomo, Paolo Magnone, Felice Crupi, G. Cellere, M. Martire, D. Tonini, Enrico Sangiorgi. A methodology to account for the finger interruptions in solar cell performance |
| 2504 | -- | 2507 | Seul Ki Lee, Sung Il Hong, Yeon-Ho Lee, Se-Won Lee, Won-Ju Cho, Jong-Tae Park. Comparative study of electrical instabilities in InGaZnO thin film transistors with gate dielectrics |
| 2508 | -- | 2511 | L. Michalas, A. Syntychaki, M. Koutsoureli, G. J. Papaioannou, Apostolos T. Voutsas. A temperature study of photosensitivity in SLS polycrystalline silicon TFTs |