| 1191 | -- | 1192 | Giovanni Busatto, Francesco Iannuzzo. Editorial |
| 1193 | -- | 1198 | Carlos Algora. Reliability of III-V concentrator solar cells |
| 1199 | -- | 1202 | James H. Stathis, M. Wang, K. Zhao. Reliability of advanced high-k/metal-gate n-FET devices |
| 1203 | -- | 1209 | U. Scheuermann, S. Schuler. Power cycling results for different control strategies |
| 1210 | -- | 1214 | R. M. Kho, A. J. Moonen, V. M. Girault, Jaap Bisschop, E. H. T. Olthof, S. Nath, Z. N. Liang. Determination of the stress level for voltage screen of integrated circuits |
| 1215 | -- | 1218 | J. Torras Flaquer, Jean-Marc Daveau, Lirida A. B. Naviner, Philippe Roche. Fast reliability analysis of combinatorial logic circuits using conditional probabilities |
| 1219 | -- | 1222 | G. G. dos Santos, E. Crespo Marques, Lirida A. B. Naviner, Jean-François Naviner. Using error tolerance of target application for efficient reliability improvement of digital circuits |
| 1223 | -- | 1229 | Digeorgia N. da Silva, André Inácio Reis, Renato P. Ribas. Gate delay variability estimation method for parametric yield improvement in nanometer CMOS technology |
| 1230 | -- | 1235 | M. Catelani, L. Ciani, V. Luongo. The FMEDA approach to improve the safety assessment according to the IEC61508 |
| 1236 | -- | 1240 | A. Deyine, Kevin Sanchez, Philippe Perdu, F. Battistella, Dean Lewis. CADless laser assisted methodologies for failure analysis and device reliability |
| 1241 | -- | 1246 | Rodrigo Possamai Bastos, Gilles Sicard, Fernanda Lima Kastensmidt, Marc Renaudin, Ricardo Reis. Asynchronous circuits as alternative for mitigation of long-duration transient faults in deep-submicron technologies |
| 1247 | -- | 1250 | E. Crespo Marques, Lirida A. B. Naviner, Jean-François Naviner. An efficient tool for reliability improvement based on TMR |
| 1251 | -- | 1258 | L. Larcher, A. Padovani. High-kappa related reliability issues in advanced non-volatile memories |
| 1259 | -- | 1262 | L. Gerrer, M. Rafik, G. Ribes, G. Ghibaudo, E. Vincent. Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation |
| 1263 | -- | 1266 | J. Martín-Martínez, E. Amat, M. B. Gonzalez, P. Verheyen, R. Rodríguez, M. Nafría, X. Aymerich, E. Simoen. SPICE modelling of hot-carrier degradation in Si::1-::::x::Ge::x:: S/D and HfSiON based pMOS transistors |
| 1267 | -- | 1272 | Stanislav Tyaginov, Ivan Starkov, Oliver Triebl, J. Cervenka, C. Jungemann, S. Carniello, J. M. Park, Hubert Enichlmair, Markus Karner, Ch. Kernstock, E. Seebacher, Rainer Minixhofer, Hajdin Ceric, Tibor Grasser. Interface traps density-of-states as a vital component for hot-carrier degradation modeling |
| 1273 | -- | 1277 | Rosario Rao, Fernanda Irrera. Threshold voltage instability in high-k based flash memories |
| 1278 | -- | 1282 | Ninoslav Stojadinovic, D. Dankovic, I. Manic, A. Prijic, V. Davidovic, S. Djoric-Veljkovic, S. Golubovic, Z. Prijic. Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress |
| 1283 | -- | 1289 | S. F. Wan Muhamad Hatta, N. Soin, D. Abd Hadi, J. F. Zhang. NBTI degradation effect on advanced-process 45 nm high-k PMOSFETs with geometric and process variations |
| 1290 | -- | 1293 | Jin Young Kim, Jun-Seok Oh, Won-Ju Cho, Jong-Tae Park. NBTI and hot carrier effect of Schottky-barrier p-MOSFETs |
| 1294 | -- | 1297 | E. Miranda, E. O Connor, P. K. Hurley. Exploratory analysis of the breakdown spots spatial distribution in metal gate/high-K/III-V stacks using functional summary statistics |
| 1298 | -- | 1303 | Paulo F. Butzen, Vinícius Dal Bem, André Inácio Reis, Renato P. Ribas. Transistor network restructuring against NBTI degradation |
| 1304 | -- | 1308 | B. Li, A. Boyer, S. Bendhia, C. Lemoine. Ageing effect on electromagnetic susceptibility of a phase locked loop |
| 1309 | -- | 1311 | J. Y. Seo, J. E. Seok, W. S. Kim, N. H. Cha, J. S. Kang, B. S. So. PMOSFET anti-fuse using GIDL-induced-HEIP mechanism |
| 1312 | -- | 1315 | M. Lanza, M. Porti, M. Nafría, X. Aymerich, E. Whittaker, B. Hamilton. UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements |
| 1316 | -- | 1319 | Dong Wook Kim, Woo Sang Park, Jong-Tae Park. The optimum fin width in p-MuGFETs with the consideration of NBTI and hot carrier degradation |
| 1320 | -- | 1326 | M. Bellotti, R. Mariani. How future automotive functional safety requirements will impact microprocessors design |
| 1327 | -- | 1331 | Feifei He, Cher Ming Tan. Modeling the effect of barrier thickness and low-k dielectric on circuit reliability using 3D model |
| 1332 | -- | 1335 | C. M. Fu, C. M. Tan, S. H. Wu, H. B. Yao. Width dependence of the effectiveness of reservoir length in improving electromigration for Cu/Low-k interconnects |
| 1336 | -- | 1340 | Y. C. Tan, Cher Ming Tan, Xiaowu Zhang, Tai-Chong Chai, D. Q. Yu. Electromigration performance of Through Silicon Via (TSV) - A modeling approach |
| 1341 | -- | 1346 | Muhammad Bashir, Linda S. Milor, Dae-Hyun Kim, Sung Kyu Lim. Methodology to determine the impact of linewidth variation on chip scale copper/low-k backend dielectric breakdown |
| 1347 | -- | 1351 | A. Podgaynaya, R. Rudolf, B. Elattari, Dionyz Pogany, Erich Gornik, M. Stecher, M. Strasser. Single pulse energy capability and failure modes of n- and p-channel LDMOS with thick copper metallization |
| 1352 | -- | 1354 | Y. C. Tan, C. M. Tan, T. C. Ng. Addressing the challenges in solder resistance measurement for electromigration test |
| 1355 | -- | 1358 | J. R. Lloyd, N. A. Connelly, Xiaoli He, K. J. Ryan, B. H. Wood. Fast diffusers in a thermal gradient (solder ball) |
| 1359 | -- | 1366 | Harald Gossner, Werner Simbürger, M. Stecher. System ESD robustness by co-design of on-chip and on-board protection measures |
| 1367 | -- | 1372 | T. Cilento, M. Schenkel, C. Yun, R. Mishra, Junjun Li, Kiran V. Chatty, Robert Gauthier. Simulation of ESD protection devices in an advanced CMOS technology using a TCAD workbench based on an ESD calibration methodology |
| 1373 | -- | 1378 | Augusto Tazzoli, M. Cordoni, P. Colombo, C. Bergonzoni, Gaudenzio Meneghesso. Time-To-Latch-Up investigation of SCR devices as ESD protection structures on 65 nm technology platform |
| 1379 | -- | 1382 | J. Bourgeat, Christophe Entringer, Philippe Galy, M. Bafleur, D. Marin-Cudraz. Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nm |
| 1383 | -- | 1387 | Sandeep Sangameswaran, Jeroen De Coster, Guido Groeseneken, Ingrid De Wolf. Impact of design factors and environment on the ESD sensitivity of MEMS micromirrors |
| 1388 | -- | 1392 | Philippe Galy, Sylvain Dudit, Michel Vallet, Ph. Larre, M. Bilinski, E. Petit, J. Beltritti, A. Dray, J. Jimenez, F. Jezequel, R. Chevallier, C. Boutonnat, V. Varo. Inventory of silicon signatures induced by CDM event on deep sub-micronic CMOS-BICMOS technologies |
| 1393 | -- | 1397 | Bo Song, Yan Han, Shurong Dong, Fei Ma, Mingliang Li, Meng Miao, Kehan Zhu. Compact MOS-triggered SCR with faster turn-on speed for ESD protection |
| 1398 | -- | 1406 | Anna Cavallini, Laura Polenta, Antonio Castaldini. Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy |
| 1407 | -- | 1412 | Mauro Ciappa, Alexander Koschik, Maurizio Dapor, Wolfgang Fichtner. Modeling secondary electron images for linewidth measurement by critical dimension scanning electron microscopy |
| 1413 | -- | 1416 | C. Cassidy, J. Teva, J. Kraft, F. Schrank. Through Silicon Via (TSV) defect investigations using lateral emission microscopy |
| 1417 | -- | 1421 | Frank Zachariasse, Gerben Boon, Gaël Faggion, Keith Sarault. Laser modulation mapping on an unmodified laser scanning microscope |
| 1422 | -- | 1426 | Joy Y. Liao, Steven Kasapi, Bruce Cory, Howard L. Marks, Yin S. Ng. Scan chain failure analysis using laser voltage imaging |
| 1427 | -- | 1430 | Scrgey Bychikhin, G. Haberfehlner, J. Rhayem, D. Vanderstraeten, R. Gillon, Dionyz Pogany. Investigation of smart power DMOS devices under repetitive stress conditions using transient thermal mapping and numerical simulation |
| 1431 | -- | 1435 | Philippe Perdu, Jerome Di-Battista, Sylvain Dudit, Tomonori Nakamura. VLSI functional analysis by dynamic emission microscopy |
| 1436 | -- | 1440 | D. Mello, R. Ricciari, M. Aiello, M. Astuto. Case study: Failure analysis for metal corrosion induced by pressure pot test |
| 1441 | -- | 1445 | P. Scholz, C. Gallrapp, Uwe Kerst, Ted Lundquist, Christian Boit. Optimizing focused ion beam created solid immersion lenses in bulk silicon using design of experiments |
| 1446 | -- | 1450 | J. S. Luo, C. S. Sung, W. S. Hsu, L. Y. Huang, J. D. Russell. Electron beam induced carbon deposition using hydrocarbon contamination for XTEM analysis |
| 1451 | -- | 1453 | Yoji Mashiko, Hiroaki Etoh, Akiyoshi Furukawa, Daisuke Nomiyama, Osamu Ichimaru. Study of non-contact nano-probing technique using FIB |
| 1454 | -- | 1458 | Rudolf Schlangen, Hervé Deslandes, Ted Lundquist, C. Schmidt, F. Altmann, K. Yu, A. Andreasyan, S. Li. Dynamic lock-in thermography for operation mode-dependent thermally active fault localization |
| 1459 | -- | 1463 | M. Fakhri, A.-K. Geinzer, R. Heiderhoff, L. J. Balk. Nanoscale thermally induced stress analysis by complementary Scanning Thermal Microscopy techniques |
| 1464 | -- | 1468 | C. Hartmann, M. Wieberneit. Investigation on BIST assisted failure analysis on digital integrated circuits |
| 1469 | -- | 1473 | S. Brand, P. Czurratis, P. Hoffrogge, M. Petzold. Automated inspection and classification of flip-chip-contacts using scanning acoustic microscopy |
| 1474 | -- | 1478 | J. Postel-Pellerin, R. Laffont, G. Micolau, F. Lalande, A. Regnier, B. Bouteille. Leakage paths identification in NVM using biased data retention |
| 1479 | -- | 1483 | Lucio Rossi, M. Riccio, E. Napoli, Andrea Irace, Giovanni Breglio, Paolo Spirito. A novel UIS test system with Crowbar feedback for reduced failure energy in power devices testing |
| 1484 | -- | 1487 | R. Kapoor, E. Escobedo-Cousin, S. H. Olsen, S. J. Bull. Characterising gate dielectrics in high mobility devices using novel nanoscale techniques |
| 1488 | -- | 1493 | Jae-Seong Jeong, Young Jeon Kim. Failure mechanism of COF based Line Driver IC for Flat Panel Display by contamination |
| 1494 | -- | 1498 | Markus Grützner, Christian Burmer, Christof Brillert. Ultra-fast CAD scan chain highlighting for failure analysis assistance |
| 1499 | -- | 1505 | Guillaume Celi, Sylvain Dudit, Philippe Perdu, Antoine Reverdy, Thierry Parrassin, Emmanuel Bechet, Dean Lewis, Michel Vallet. Facing the defect characterization and localization challenges of bridge defects on a submicronic technology (45 nm and below) |
| 1506 | -- | 1510 | Zoubir Khatir, L. Dupont, A. Ibrahim. Investigations on junction temperature estimation based on junction voltage measurements |
| 1511 | -- | 1513 | Roland Biberger, Guenther Benstetter, Holger Goebel, Alexander Hofer. Intermittent-contact capacitance spectroscopy - A new method for determining C(V) curves with sub-micron lateral resolution |
| 1514 | -- | 1519 | David J. Smith, David A. Cullen, Lin Zhou, Martha R. McCartney. Applications of TEM imaging, analysis and electron holography to III-nitride HEMT devices |
| 1520 | -- | 1522 | M. Faqir, M. Bouya, N. Malbert, Nathalie Labat, D. Carisetti, B. Lambert, G. Verzellesi, Fausto Fantini. Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations |
| 1523 | -- | 1527 | Valerio Di Lecce, Michele Esposto, Matteo Bonaiuti, Gaudenzio Meneghesso, Enrico Zanoni, Fausto Fantini, Alessandro Chini. Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress |
| 1532 | -- | 1537 | M. Bouarroudj-Berkani, D. Othman, Stéphane Lefebvre, S. Moumen, Zoubir Khatir, T. Ben Sallah. Ageing of SiC JFET transistors under repetitive current limitation conditions |
| 1538 | -- | 1542 | Matteo Meneghini, D. Barbisan, Y. Bilenko, M. Shatalov, J. Yang, R. Gaska, Gaudenzio Meneghesso, Enrico Zanoni. Defect-related degradation of Deep-UV-LEDs |
| 1543 | -- | 1547 | B. Lambert, G. Jonsson, J. Bataille, C. Ollivier, P. Mezenge, H. Derewonko, H. Thomas, D. Floriot, H. Blanck, C. Moreau. Reliability of high voltage/high power L/S-band Hbt technology |
| 1548 | -- | 1553 | G. A. Koné, B. Grandchamp, C. Hainaut, F. Marc, C. Maneux, Nathalie Labat, T. Zimmer, Virginie Nodjiadjim, Jean Godin. Preliminary results of storage accelerated aging test on InP/InGaAs DHBT |
| 1554 | -- | 1558 | S. Ghosh, F. Marc, C. Maneux, B. Grandchamp, G. A. Koné, T. Zimmer. Thermal aging model of InP/InGaAs/InP DHBT |
| 1559 | -- | 1562 | Manuel Vázquez, Neftalí Núñez, E. Nogueira, A. Borreguero. Degradation of AlInGaP red LEDs under drive current and temperature accelerated life tests |
| 1563 | -- | 1567 | Heinz-Christoph Neitzert. ESD sensitivity of AlGaAs and InGaAsP based Fabry-Perot laser diodes |
| 1568 | -- | 1573 | R. Baillot, Y. Deshayes, L. Béchou, T. Buffeteau, I. Pianet, C. Armand, F. Voillot, S. Sorieul, Y. Ousten. Effects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses |
| 1574 | -- | 1576 | O. Latry, P. Dherbécourt, K. Mourgues, H. Maanane, J. P. Sipma, F. Cornu, Ph. Eudeline, M. Masmoudi. A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications |
| 1577 | -- | 1580 | G. Sasso, M. Costagliola, N. Rinaldi. Avalanche multiplication and pinch-in models for simulating electrical instability effects in SiGe HBTs |
| 1587 | -- | 1592 | C. Moreau, M. Le Pipec, S. Tence, J. Hemery, J. Rigo, C. Guérin, D. Ruelloux, C. Schneider, P. Le Helleye. A complete methodology for assessing GaN behaviour for military applications |
| 1593 | -- | 1598 | R. Gaddi, R. Van Kampen, A. Unamuno, V. Joshi, D. Lacey, M. Renault, C. Smith, R. Knipe, D. Yost. MEMS technology integrated in the CMOS back end |
| 1599 | -- | 1603 | J. Iannacci, A. Repchankova, A. Faes, Augusto Tazzoli, Gaudenzio Meneghesso, Gian-Franco Dalla Betta. Enhancement of RF-MEMS switch reliability through an active anti-stiction heat-based mechanism |
| 1604 | -- | 1608 | Augusto Tazzoli, M. Barbato, F. Mattiuzzo, V. Ritrovato, Gaudenzio Meneghesso. Study of the actuation speed, bounces occurrences, and contact reliability of ohmic RF-MEMS switches |
| 1609 | -- | 1614 | A. Koszewski, F. Souchon, Ch. Dieppedale, T. Ouisse. Modeling of dielectric charging in electrostatic MEMS switches |
| 1615 | -- | 1620 | U. Zaghloul, M. Koutsoureli, H. Wang, Fabio Coccetti, G. Papaioannou, Patrick Pons, Robert Plana. Assessment of dielectric charging in electrostatically driven MEMS devices: A comparison of available characterization techniques |
| 1621 | -- | 1625 | Yuji Sasaki, Mauro Ciappa, Takayuki Masunaga, Wolfgang Fichtner. Accurate extraction of the mechanical properties of thin films by nanoindentation for the design of reliable MEMS |
| 1626 | -- | 1630 | K. Wada, Y. Yagi, I. Nakagawa, T. Atsumi, N. Ohno. Analysis of thermal expansion in elastic and elastoplastic layers subjected to cyclic thermal loading |
| 1631 | -- | 1635 | L. Sauter, A. Seekamp, Y. Shibata, Y. Kanameda, H. Yamashita. Whisker mitigation measures for Sn-plated Cu for different stress tests |
| 1636 | -- | 1640 | Y. Yang, R. Labie, F. Ling, C. Zhao, A. Radisic, Jan Van Olmen, Youssef Travaly, Bert Verlinden, Ingrid De Wolf. Processing assessment and adhesion evaluation of copper through-silicon vias (TSVs) for three-dimensional stacked-integrated circuit (3D-SIC) architectures |
| 1641 | -- | 1644 | B. Czerny, G. Khatibi, B. Weiss, T. Licht. A fast test technique for life time estimation of ultrasonically welded Cu-Cu interconnects |
| 1645 | -- | 1649 | Changwoon Han, Chulmin Oh, Nochang Park, Wonsik Hong. Creep lifetime prediction of solder joint for heat sink assembly |
| 1650 | -- | 1653 | J. Virkki, T. Seppälä, P. Raumonen. Testing the effects of reflow on tantalum capacitors |
| 1654 | -- | 1660 | Xiaosong Ma, Kaspar M. B. Jansen, G. Q. Zhang, Willem D. van Driel, Olaf van der Sluis, Leo J. Ernst, C. Regards, Christian Gautier, Hélène Frémont. A fast moisture sensitivity level qualification method |
| 1661 | -- | 1665 | B. Dompierre, W. C. Maia Filho, M. Brizoux, V. Aubin, E. Charkaluk. Thermal ageing induces drastic changes on mechanical and damage behavior of Sn3.0Ag0.5Cu alloy |
| 1666 | -- | 1671 | Javad Zarbakhsh, Balamurugan Karunamurthy, Carlos O. Trejo-Caballero, Endre Barti, Thomas Detzel. Microscopic stress simulation of non-planar chip technologies |
| 1672 | -- | 1677 | Paolo Emilio Bagnoli, Y. Zhang. Electro-thermal simulation of metal interconnections under high current flow |
| 1678 | -- | 1683 | R. L. J. M. Ubachs. Electromigration in WLCSP solder bumps |
| 1684 | -- | 1687 | Michael Goroll, Reinhard Pufall. New aspects in characterization of adhesion of moulding compounds on different surfaces by using a simple button-shear-test method for lifetime prediction of power devices |
| 1688 | -- | 1691 | A. Aubert, J. P. Rebrasse, L. Dantas de Morais, Nathalie Labat, Hélène Frémont. Failure analysis case study on a Cu/low-k technology in package: New front-side approach using laser and plasma de-processing |
| 1692 | -- | 1696 | Mohamed Matmat, K. Koukos, Fabio Coccetti, T. Idda, Antoine Marty, Christophe Escriba, Jean-Yves Fourniols, Daniel Estève. Life expectancy and characterization of capacitive RF MEMS switches |
| 1697 | -- | 1699 | C. Keller, S. Tus. Investigation of open bond wires in MEMS devices |
| 1700 | -- | 1705 | F. Infante, Philippe Perdu, Dean Lewis. Magnetic microscopy for ground plane current detection: a fast and reliable technique for current leakage localization by means of magnetic simulations |
| 1706 | -- | 1710 | E. Kamara, H. Lu, C. Bailey, C. Hunt, D. Di Maio, O. Thomas. A multi-disciplinary study of vibration based reliability of lead-free electronic interconnects |
| 1711 | -- | 1714 | J. Virkki, A. Koskenkorva, L. Frisk. Development of a matrix test board for capacitor reliability testing |
| 1715 | -- | 1719 | Reinhold Bayerer. Advanced packaging yields higher performance and reliability in power electronics |
| 1720 | -- | 1724 | F. Bertoluzza, Paolo Cova, Nicola Delmonte, P. Pampili, M. Portesine. Coupled measurement-simulation procedure for very high power fast recovery - Soft behavior diode design and testing |
| 1725 | -- | 1730 | M. Riccio, Lucio Rossi, Andrea Irace, E. Napoli, Giovanni Breglio, Paolo Spirito, R. Tagami, Y. Mizuno. Analysis of large area Trench-IGBT current distribution under UIS test with the aid of lock-in thermography |
| 1731 | -- | 1737 | Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo. IGBT RBSOA non-destructive testing methods: Analysis and discussion |
| 1738 | -- | 1743 | F. Carastro, Alberto Castellazzi, J. C. Clare, P. W. Wheeler. Control technique for power device electro-thermal stress minimisation in non-linear load variable-frequency resonant power converters |
| 1744 | -- | 1749 | Pascal Lecuyer, Hélène Frémont, Jean-Pierre Landesman, Manoubi Auguste Bahi. Wearout estimation using the Robustness Validation methodology for components in 150 degreeC ambient automotive applications |
| 1750 | -- | 1757 | Vezio Malandruccolo, Mauro Ciappa, Hubert Rothleitner, M. Hommel, Wolfgang Fichtner. A new built-in screening methodology for Successive Approximation Register Analog to Digital Converters |
| 1758 | -- | 1762 | R. Charavel, J. Roig, S. Mouhoubi, P. Gassot, F. Bauwens, P. Vanmeerbeek, B. Desoete, P. Moens, Eddy De Backer. Next generation of Deep Trench Isolation for Smart Power technologies with 120 V high-voltage devices |
| 1763 | -- | 1767 | M. A. Belaïd, K. Daoud. Evaluation of hot-electron effects on critical parameter drifts in power RF LDMOS transistors |
| 1768 | -- | 1772 | D. Martineau, T. Mazeaud, M. Legros, Ph. Dupuy, C. Levade. Characterization of alterations on power MOSFET devices under extreme electro-thermal fatigue |
| 1773 | -- | 1777 | C. Ronsisvalle, V. Enea. Improvement of high-voltage junction termination extension (JTE) by an optimized profile of lateral doping (VLD) |
| 1778 | -- | 1782 | Mirko Bernardoni, Nicola Delmonte, Paolo Cova, Roberto Menozzi. Thermal modeling of planar transformer for switching power converters |
| 1783 | -- | 1788 | H. Gualous, R. Gallay, G. Alcicek, Boubekeur Tala-Ighil, A. Oukaour, B. Boudart, Ph. Makany. Supercapacitor ageing at constant temperature and constant voltage and thermal shock |
| 1789 | -- | 1795 | A. Testa, S. De Caro, S. Panarello, S. Patanè, Sebastiano Russo, D. Patti, S. Poma, Romeo Letor. Reliability of planar, Super-Junction and trench low voltage power MOSFETs |
| 1796 | -- | 1803 | O. Briat, J.-M. Vinassa, N. Bertrand, H. El Brouji, J.-Y. Delétage, Eric Woirgard. Contribution of calendar ageing modes in the performances degradation of supercapacitors during power cycling |
| 1804 | -- | 1809 | L. Dupont, J. L. Blanchard, R. Lallemand, G. Coquery, Jean-Michel Morelle, G. Blondel, B. Rouleau. Experimental and numerical results correlation during extreme use of power MOSFET designed for avalanche functional mode |
| 1810 | -- | 1814 | M. Tounsi, A. Oukaour, Boubekeur Tala-Ighil, H. Gualous, B. Boudart, D. Aissani. Characterization of high-voltage IGBT module degradations under PWM power cycling test at high ambient temperature |
| 1815 | -- | 1821 | Yassine Belmehdi, Stephane Azzopardi, Jean-Yves Deletage, Eric Woirgard. Experimental electro-mechanical static characterization of IGBT bare die under controlled temperature |
| 1822 | -- | 1831 | J. L. Autran, D. Munteanu, Philippe Roche, Gilles Gasiot, S. Martinie, S. Uznanski, S. Sauze, S. Semikh, E. Yakushev, S. Rozov, P. Loaiza, G. Warot, M. Zampaolo. Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level |
| 1832 | -- | 1836 | M. Bagatin, Simone Gerardin, Alessandro Paccagnella, G. Cellere, F. Irom, D. N. Nguyen. Destructive events in NAND Flash memories irradiated with heavy ions |
| 1837 | -- | 1841 | Simone Gerardin, M. Bagatin, Alessandro Paccagnella, G. Cellere, A. Visconti, M. Bonanomi. Impact of total dose on heavy-ion upsets in floating gate arrays |
| 1842 | -- | 1847 | G. Busatto, G. Currò, Francesco Iannuzzo, A. Porzio, A. Sanseverino, Francesco Velardi. Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET |
| 1848 | -- | 1851 | L. Michalas, G. J. Papaioannou, Apostolos T. Voutsas. Degradation of polycrystalline silicon TFTs due to alpha particles irradiation stress |
| 1852 | -- | 1856 | Joaquín Alvarado, E. Boufouss, Valeria Kilchytska, Denis Flandre. Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs |
| 1857 | -- | 1860 | S. Libertino, D. Corso, G. Murè, A. Marino, F. Palumbo, F. Principato, G. Cannella, T. Schillaci, S. Giarusso, F. Celi, M. Lisiansky, Y. Roizin, Salvatore Lombardo. Radiation effects in nitride read-only memories |
| 1861 | -- | 1865 | Gianluca Generali, Raffaella Capelli, Stefano Toffanin, Antonio Facchetti, Michele Muccini. Ambipolar field-effect transistor based on alpha, omega-dihexylquaterthiophene and alpha, omega-diperfluoroquaterthiophene vertical heterojunction |
| 1866 | -- | 1870 | A. Cester, D. Bari, J. Framarin, N. Wrachien, Gaudenzio Meneghesso, S. Xia, V. Adamovich, J. J. Brown. Thermal and electrical stress effects of electrical and optical characteristics of Alq3/NPD OLED |
| 1871 | -- | 1874 | Cher Ming Tan, Boon Khai Eric Chen, Kok Peng Toh. Humidity study of a-Si PV cell |
| 1875 | -- | 1879 | P. Espinet, Carlos Algora, José Ramón González, Neftalí Núñez, Manuel Vázquez. Degradation mechanism analysis in temperature stress tests on III-V ultra-high concentrator solar cells using a 3D distributed model |
| 1880 | -- | 1883 | Neftalí Núñez, Manuel Vázquez, José Ramón González, Carlos Algora, P. Espinet. Novel accelerated testing method for III-V concentrator solar cells |
| 1884 | -- | 1887 | X. Boddaert, B. Bensaid, P. Benaben, R. Gwoziecki, R. Coppard. Mechanical and thermal reliability of printed organic thin-film transistor |
| 1888 | -- | 1893 | H. Youssef, A. Ferrand, P. Calmon, Patrick Pons, Robert Plana. Methods to improve reliability of bulge test technique to extract mechanical properties of thin films |
| 1894 | -- | 1898 | S. Padovani, A. Del Negro, M. Antonipieri, S. Sinesi, R. Campesato, M. C. Casale, G. Gabetta, G. Gori. Triple junction InGaP/InGaAs/Ge solar cells for high concentration photovoltaics application: Degradation tests of solar receivers |
| 1899 | -- | 1902 | Mahyar Boostandoost, Uwe Kerst, Christian Boit. Extraction of local thin-film solar cell parameters by bias-dependent IR-LBIC |
| 1903 | -- | 1906 | Laura Lancellotti, Raffaele Fucci, Antonio Romano, Angelo Sarno, Santolo Daliento. Induced degradation on c-Si solar cells for concentration terrestrial applications |